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Modeling and simulation of insulated-gate field-effect transistor switching circuits

According to PR-model, Modeling and simulation of insulated-gate field-effect transistor switching circuits is ranked 21,521^st in multilingual Wikipedia, in particular this website is ranked 109^th in Chinese Wikipedia.

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21,521^st place

1,025,986^th place

93,967^th place

zhChinese

109^th place

36,073^rd place

637^th place

enEnglish

61,935^th place

1,312,442^nd place

209,528^th place