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ذاكرة تغيير الطور (Arabic Wikipedia)

Analysis of information sources in references of the Wikipedia article "ذاكرة تغيير الطور" in Arabic language version.

refsWebsite
Global rank Arabic rank
5doi.org
2nd place
5th place
5web.archive.org
1st place
1st place
4harvard.edu
18th place
33rd place
4semanticscholar.org
11th place
86th place
2arxiv.org
69th place
207th place
2nih.gov
4th place
6th place
1theregister.co.uk
1,216th place
3,902nd place
1tools.wmflabs.org
3,290th place
697th place
1psu.edu
207th place
462nd place
1iastate.edu
2,548th place
3,010th place
1techworld.com
low place
low place
1technologyreview.com
1,943rd place
3,743rd place
1dailytech.com
low place
low place

arxiv.org

dailytech.com

doi.org

  • Chua، L. O. (2011)، "Resistance switching memories are memristors"، Applied Physics A، ج. 102، ص. 765–783، Bibcode:2011ApPhA.102..765C، DOI:10.1007/s00339-011-6264-9
  • Di Ventra، Massimiliano؛ Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. ج. 24 ع. 25: 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX:10.1.1.745.8657. DOI:10.1088/0957-4484/24/25/255201. PMID:23708238. S2CID:14892809.
  • Pohm، A.؛ Sie، C.؛ Uttecht، R.؛ Kao، V.؛ Agrawal، O. (1970). "Chalcogenide glass bistable resistivity (Ovonic) memories". IEEE Transactions on Magnetics. ج. 6 ع. 3: 592. Bibcode:1970ITM.....6..592P. DOI:10.1109/TMAG.1970.1066920.
  • Horii، H.؛ وآخرون (2003). "A novel cell technology using N-doped GeSbTe films for phase change RAM". 2003 Symposium on VLSI Technology. Digest of Technical Papers. ص. 177–8. DOI:10.1109/VLSIT.2003.1221143. ISBN:4-89114-033-X. S2CID:40051862. 03CH37407.
  • Simpson، R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5". Nano Letters. ج. 10 ع. 2: 414–9. Bibcode:2010NanoL..10..414S. DOI:10.1021/nl902777z. PMID:20041706. S2CID:9585187. مؤرشف من الأصل في 2021-08-18.

harvard.edu

ui.adsabs.harvard.edu

  • Chua، L. O. (2011)، "Resistance switching memories are memristors"، Applied Physics A، ج. 102، ص. 765–783، Bibcode:2011ApPhA.102..765C، DOI:10.1007/s00339-011-6264-9
  • Di Ventra، Massimiliano؛ Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. ج. 24 ع. 25: 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX:10.1.1.745.8657. DOI:10.1088/0957-4484/24/25/255201. PMID:23708238. S2CID:14892809.
  • Pohm، A.؛ Sie، C.؛ Uttecht، R.؛ Kao، V.؛ Agrawal، O. (1970). "Chalcogenide glass bistable resistivity (Ovonic) memories". IEEE Transactions on Magnetics. ج. 6 ع. 3: 592. Bibcode:1970ITM.....6..592P. DOI:10.1109/TMAG.1970.1066920.
  • Simpson، R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5". Nano Letters. ج. 10 ع. 2: 414–9. Bibcode:2010NanoL..10..414S. DOI:10.1021/nl902777z. PMID:20041706. S2CID:9585187. مؤرشف من الأصل في 2021-08-18.

iastate.edu

lib.dr.iastate.edu

  • Sie، C.H. (1969). Memory cell using bistable resistivity in amorphous As-Te-Ge film. Retrospective Theses and Dissertations (PhD). Iowa State University. 3604 https://lib.dr.iastate.edu/rtd/3604.

nih.gov

pubmed.ncbi.nlm.nih.gov

psu.edu

citeseerx.ist.psu.edu

semanticscholar.org

api.semanticscholar.org

semanticscholar.org

technologyreview.com

techworld.com

features.techworld.com

theregister.co.uk

tools.wmflabs.org

web.archive.org