Флэш-памяць (Belarusian Wikipedia)

Analysis of information sources in references of the Wikipedia article "Флэш-памяць" in Belarusian language version.

refsWebsite

Global rank Belarusian rank

21web.archive.org

1^st place

2^nd place

4eetimes.com

3,722^nd place

low place

3anandtech.com

1,383^rd place

5,032^nd place

33dnews.ru

2,135^th place

708^th place

3micron.com

low place

2extremetech.com

4,667^th place

6,335^th place

2itrs.net

low place

2techinsights.com

low place

2linuxdevices.com

low place

2archive.today

14^th place

19^th place

2onfi.org

low place

2chinaflashmarket.com

low place

2ieee.org

652^nd place

1,173^rd place

1usenix.org

5,990^th place

low place

1google.ru

3,314^th place

4,098^th place

1ixbt.com

3,849^th place

2,658^th place

1demartek.com

low place

1tomshardware.com

2,976^th place

low place

1ucsd.edu

1,933^rd place

3,337^th place

1nuvoton.com

low place

1scu.edu

low place

1newatlas.com

5,636^th place

low place

1toshiba.co.jp

9,918^th place

low place

1xbitlabs.com

low place

1lenovo.com

8,819^th place

low place

1altec-cs.com

low place

1dell.com

6,805^th place

low place

1nikkeibp.co.jp

1,415^th place

low place

1objective-analysis.com

low place

1pcworld.com

1,317^th place

1,239^th place

1flashmemorysummit.com

low place

1eetasia.com

low place

1chipworks.com

low place

1snia.org

low place

1nih.gov

4^th place

66^th place

1doi.org

2^nd place

22^nd place

1aboutnetapp.ru

low place

1geek.com

5,107^th place

6,184^th place

1msdn.com

3,029^th place

3,130^th place

1bbc.co.uk

8^th place

39^th place

1trendforce.com

low place

3dnews.ru

aboutnetapp.ru

docs.aboutnetapp.ru

Flash Wear-Leveling Архівавана 24 чэрвеня 2016.

altec-cs.com

http://www.altec-cs.com/downloads/altec_white_paper/WP_Avoiding_premature_failures_of_NAND_Flash_memory_for_duplex-printing_e10.pdf Архівавана 4 сакавіка 2016. «Resulting from the continuous reduction of the structure size of the flash memory chips, 2-bit MLC and 3-bit MLC (TLC) NAND flash memory …sometimes only allows 1,000 P/E cycles (MLC) and/or only a few hundred P/E cycles (TLC) per flash memory cell before degradation»; «Table 1: Typical P/E cycles …»

anandtech.com

Kristian Vättö,Understanding TLC NAND // Anandtech, February 23, 2012
Anand, Lal Shimpi (July 25, 2013). [[1] "Samsung SSD 840 EVO Review: 120GB, 250GB, 500GB, 750GB & 1TB Models Tested"]. AnandTech. Праверана 9 January 2015. {{cite news}}: Праверце значэнне |url= (даведка) «Samsung calls its latest NAND process 10nm-class or 1x-nm, which can refer to feature sizes anywhere from 10nm to 19nm but we’ve also heard it referred to as 19nm TLC.»
Lal Shimpi, Anand (2 December 2010). "Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates". Anandtech. Праверана 2 December 2010.

archive.today

ELJonline:Flash Filesystems for Embedded Linux Systems — Linux For Devices Articles — Linux for Devices (нявызн.). Архівавана з першакрыніцы 5 снежня 2012. Праверана 3 кастрычніка 2017.
Introducing YAFFS, the first NAND-specific flash file system — News — Linux for Devices (нявызн.). Архівавана з першакрыніцы 12 верасня 2012. Праверана 3 кастрычніка 2017.

bbc.co.uk

news.bbc.co.uk

R.I.P. Floppy Disk // BBC NEWS, UK, 1 april 2003

chinaflashmarket.com

en.chinaflashmarket.com

Exhibit 3: NAND Flash interface standards development of different manufactories (англ.). 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (13 студзеня 2013). Праверана 9 студзеня 2015.(англ.) . 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (2013-01-13). Праверана 9 студзеня 2015.
NAND Flash related product application market (англ.). 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (13 студзеня 2013). Праверана 9 студзеня 2015.(англ.) . 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (2013-01-13). Праверана 9 студзеня 2015.

chipworks.com

Dick James (August 5, 2014). "The Second Shoe Drops – Samsung V-NAND Flash"(англ.). ChipWorks. Архівавана з арыгінала 1 студзеня 2015. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

dell.com

Solid State Drive (SSD) FAQ // Dell: «6. I have unplugged my SSD drive and put it into storage. How long can I expect the drive to retain my data without needing to plug the drive back in? … In MLC and SLC, this can be as low as 3 months and best case can be more than 10 years»

demartek.com

Dennis Martin. NAND Flash – Endurance (нявызн.)(недаступная спасылка). Demartek, Storage Decisions Conference (11-12 June 2013). — «MLC typical life 10,000 or fewer write cycles  MLC-2: 3,000 – 10,000 write cycles  MLC-3: 300 – 3,000 write cycles» Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 студзеня 2015.

doi.org

Overview of emerging nonvolatile memory technologies // Nanoscale Res Lett. 2014; 9(1): 526. Sep 25, 2014. doi:10.1186/1556-276X-9-526

eetasia.com

Nirmal Ramaswamy, Thomas Graettinger, (Micron) (2013-07-05). "NAND flash scaling: 20nm node and below. Here are some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology" (PDF)(англ.). EE Times-Asia. Архівавана з арыгінала (PDF) 12 студзеня 2015. Праверана 2015-01-11. This had already become a problem at the 25nm node requiring the deployment of airgap between the cells to reduce interference {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)Папярэджанні CS1: розныя назвы: authors list (спасылка)

eetimes.com

Clarke, Peter (20 November 2012). «Samsung takes NAND memory below 20-nm» Архівавана 28 лістапада 2012. eetimes.com. Retrieved 21 December 2012.
Jeongdong Choe (TechInsights) (2013-07-25). "Comparing Leading-Edge NAND Flash Memories"(англ.). EETimes. Праверана 2015-01-11. All the NAND manufacturers adopted an air-gap process to achieve high performance and reliability. Toshiba implemented an air-gap process on its 19nm NAND device, while Samsung adopted it on 21nm. IMFT has used a more mature air-gap process on both the wordline and bitline structure since its 25nm NAND technology. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Peter Clarke (2014-08-25). "NAND, DRAM 3D-Transition Roadmaps"(англ.). EETimes. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Rick Merritt (2014-08-05). "Samsung Tips 3-Bit Vertical NAND. Korean giant starts smart storage initiative"(англ.). EETimes. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

extremetech.com

"SanDisk's collosal 4TB SSD: Does this mean SSDs will soon provide more storage than hard drives?"(англ.). ExtremeTech. May 5, 2014. Праверана 2015-01-09. but no one is even talking about QLC (quad-level cell) NAND — there's just no way to store voltage at that fine-grained level while retaining enough write cycles to deploy the tech effectively. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)(англ.) , ExtremeTech (May 5, 2014). Праверана 9 студзеня 2015. «but no one is even talking about QLC (quad-level cell) NAND — there’s just no way to store voltage at that fine-grained level while retaining enough write cycles to deploy the tech effectively.».
Ed Oswald (February 20, 2012). "Current solid-state drive technology is doomed, says Microsoft Research"(англ.). ExtremeTech. Праверана 2015-01-09. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

flashmemorysummit.com

Edward Grochowski, Robert E.Fontana, Future Technology Challenges For NAND Flash and HDD Products // Flash Memory Summit, 2012(англ.) : slide 6 «Projected NAND Flash Memory Circuit Density Roadmap»

geek.com

«Из восьми /кристаллов/ можно сформировать чип флеш-памяти на 128 Гб (Eight can be combined to produce … 128GB flash memory chip)»(англ.) Архівавана 27 красавіка 2012.

google.ru

books.google.ru

Hasso Plattner, Alexander. Zeier. In-Memory Data Management: Technology and Applications. — SpringerLink : Bücher. — Springer, 2012. — С. 45. — 267 с. — ISBN 3-642-29575-4.

ieee.org

spectrum.ieee.org

Flash Memory Survives 100 Million Cycles — IEEE Spectrum

ieeexplore.ieee.org

Kim, Kinam; Koh, Gwan-Hyeob (16 May 2004). Future Memory Technology including Emerging New Memories (PDF). Serbia and Montenegro: Proceedings of the 24th International Conference on Microelectronics (апублікавана 2004-05). pp. 377–384. Праверана 15 August 2008. {{cite book}}: Праверце значэнне даты ў: |publication-date= (даведка)

itrs.net

Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Архівавана 18 красавіка 2012. // ITRS 2010
Table ORTC1 Summary 2013 ORTC Technology Trend Targets Архівавана 21 студзеня 2015. // ITRS из ITRS 2013 EDITION Архівавана 21 верасня 2014.

ixbt.com

iXBT.com :: Все новости :: Intel и Micron освоили выпуск 3-битной флэш-памяти типа NAND по нормам 25 нм(недаступная спасылка)

lenovo.com

Comparison of NAND Flash Technologies Used in SolidState Storage, IBM 2010 «Table 1. Endurance performance for various technology nodes»

linuxdevices.com

ELJonline:Flash Filesystems for Embedded Linux Systems — Linux For Devices Articles — Linux for Devices (нявызн.). Архівавана з першакрыніцы 5 снежня 2012. Праверана 3 кастрычніка 2017.
Introducing YAFFS, the first NAND-specific flash file system — News — Linux for Devices (нявызн.). Архівавана з першакрыніцы 12 верасня 2012. Праверана 3 кастрычніка 2017.

micron.com

Flash Memory Technology Direction Архівавана 11 верасня 2014., Jim Cooke, 2007 Reducing Read Disturb ""«Rule of thumb for excessive reads per block between ERASE operations: SLC — 1,000,000 READ cycles; MLC — 100,000 READ cycles»
Micron Technology, Inc. — NOR Flash | Memory and Storage (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 10 верасня 2017. Праверана 3 кастрычніка 2017.

download.micron.com

Design and Use Considerations for NAND Flash memory (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 19 ліпеня 2011. Праверана 3 кастрычніка 2017.

msdn.com

blogs.msdn.com

ReadyBoost — Using Your USB Key to Speed Up Windows Vista — Tom Archer’s Blog — Site Home — MSDN Blogs

newatlas.com

Samsung moves into mass production of 3D flash memory

nih.gov

ncbi.nlm.nih.gov

Overview of emerging nonvolatile memory technologies // Nanoscale Res Lett. 2014; 9(1): 526. Sep 25, 2014. doi:10.1186/1556-276X-9-526

nikkeibp.co.jp

techon.nikkeibp.co.jp

Kawamatus, Tatsuya. TECHNOLOGY FOR MANAGING NAND FLASH (нявызн.). Hagiwara sys-com co., LTD. Праверана 1 August 2011.(недаступная спасылка)

nuvoton.com

http://www.nuvoton.com/NuvotonMOSS/Community/ProductInfo.aspx?tp_GUID=d2589477-840d-4046-9c3a-2e0e457048b3 Архівавана 7 ліпеня 2011. ISD ChipCorder

objective-analysis.com

Samsung samples 3D NAND SSD (нявызн.)(недаступная спасылка). "ObjectiveAnalysis" (3 ліпеня 2025). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.: «.Samsung introduced its 19nm NAND by calling it a „10nm-class“ product. Once again, the press misunderstood and broadcast to the world that Samsung was ahead of all of its competitors»

onfi.org

http://www.onfi.org/docs/ONFI_1_0_Gold.pdf Архівавана 28 лістапада 2007.
http://www.onfi.org/onfimembers.html Архівавана 16 кастрычніка 2007.

pcworld.com

"Samsung's 840 EVO SSD family: Fast, large, and in charge". PCWorld. 7/25/2013. Праверана 9 January 2015. {{cite news}}: Праверце значэнне даты ў: |date= (даведка): «the 19nm manufacturing process used to produce the NAND. Samsung for some reason is calling this 10nm-class, or 1x NAND, but they assured us that it’s 19nm.»

scu.edu

cse.scu.edu

Thomas Schwarz. Floating Gate Basics (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 1 кастрычніка 2017. Праверана 3 кастрычніка 2017.

snia.org

Tom Coughlin; Ed Grochowski. Thanks for the Memories: Emerging Non-Volatile Memory Technologies (англ.). Coughlin Associates; SNIA 2014 Storage Developer Conference (15 верасня 2014). Праверана 9 студзеня 2015.(англ.) . Coughlin Associates; SNIA 2014 Storage Developer Conference (September 15, 2014). Праверана 9 студзеня 2015.

techinsights.com

Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2013). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2014). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.

tomshardware.com

Samsung Mass Producing 128Gb 3-bit MLC NAND Flash Kevin Parrish // Tom’s Hardware, 11 April 2013

toshiba.co.jp

Toshiba Starts World’s First Sample Shipment of 64-Layer 3D Flash Memory

trendforce.com

seminar.trendforce.com

Sean Yang. Supply Dynamics: Limited Growth &Constant Share. Market Share (Production Base) (англ.). 2014 NAND Flash Market Update. Supply, Demand and Beyond. TrendForce. Праверана 9 студзеня 2015.(англ.) . 2014 NAND Flash Market Update. Supply, Demand and Beyond. TrendForce. Праверана 9 студзеня 2015.

ucsd.edu

nvmw.ucsd.edu

A 7.8MB/s 64Gb 4-Bit/Cell NAND Flash Memory on 43nm CMOS Technology Архівавана 9 студзеня 2015. // Sandisk, NVMW — UCSD, 11-13 April 2010: «4-Bit/Cell (16LC)»

usenix.org

static.usenix.org

Simona Boboila, Peter Desnoyers Write Endurance in Flash Drives: Measurements and Analysis(англ.) // FAST. — San Jose, California: Northeastern University, 2010.

web.archive.org

Dennis Martin. NAND Flash – Endurance (нявызн.)(недаступная спасылка). Demartek, Storage Decisions Conference (11-12 June 2013). — «MLC typical life 10,000 or fewer write cycles  MLC-2: 3,000 – 10,000 write cycles  MLC-3: 300 – 3,000 write cycles» Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 студзеня 2015.
A 7.8MB/s 64Gb 4-Bit/Cell NAND Flash Memory on 43nm CMOS Technology Архівавана 9 студзеня 2015. // Sandisk, NVMW — UCSD, 11-13 April 2010: «4-Bit/Cell (16LC)»
http://www.nuvoton.com/NuvotonMOSS/Community/ProductInfo.aspx?tp_GUID=d2589477-840d-4046-9c3a-2e0e457048b3 Архівавана 7 ліпеня 2011. ISD ChipCorder
Thomas Schwarz. Floating Gate Basics (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 1 кастрычніка 2017. Праверана 3 кастрычніка 2017.
«Многокристальный модуль флеш-памяти NAND со стеком из 16-ти кристаллов NAND (NAND flash MCP (multi-chip package) with a 16-die NAND stack)» Архівавана 4 чэрвеня 2012. (англ.)
http://www.altec-cs.com/downloads/altec_white_paper/WP_Avoiding_premature_failures_of_NAND_Flash_memory_for_duplex-printing_e10.pdf Архівавана 4 сакавіка 2016. «Resulting from the continuous reduction of the structure size of the flash memory chips, 2-bit MLC and 3-bit MLC (TLC) NAND flash memory …sometimes only allows 1,000 P/E cycles (MLC) and/or only a few hundred P/E cycles (TLC) per flash memory cell before degradation»; «Table 1: Typical P/E cycles …»
Design and Use Considerations for NAND Flash memory (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 19 ліпеня 2011. Праверана 3 кастрычніка 2017.
Flash Memory Technology Direction Архівавана 11 верасня 2014., Jim Cooke, 2007 Reducing Read Disturb ""«Rule of thumb for excessive reads per block between ERASE operations: SLC — 1,000,000 READ cycles; MLC — 100,000 READ cycles»
Clarke, Peter (20 November 2012). «Samsung takes NAND memory below 20-nm» Архівавана 28 лістапада 2012. eetimes.com. Retrieved 21 December 2012.
Samsung samples 3D NAND SSD (нявызн.)(недаступная спасылка). "ObjectiveAnalysis" (3 ліпеня 2025). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.: «.Samsung introduced its 19nm NAND by calling it a „10nm-class“ product. Once again, the press misunderstood and broadcast to the world that Samsung was ahead of all of its competitors»
Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Архівавана 18 красавіка 2012. // ITRS 2010
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2013). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Table ORTC1 Summary 2013 ORTC Technology Trend Targets Архівавана 21 студзеня 2015. // ITRS из ITRS 2013 EDITION Архівавана 21 верасня 2014.
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2014). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Nirmal Ramaswamy, Thomas Graettinger, (Micron) (2013-07-05). "NAND flash scaling: 20nm node and below. Here are some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology" (PDF)(англ.). EE Times-Asia. Архівавана з арыгінала (PDF) 12 студзеня 2015. Праверана 2015-01-11. This had already become a problem at the 25nm node requiring the deployment of airgap between the cells to reduce interference {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)Папярэджанні CS1: розныя назвы: authors list (спасылка)
Dick James (August 5, 2014). "The Second Shoe Drops – Samsung V-NAND Flash"(англ.). ChipWorks. Архівавана з арыгінала 1 студзеня 2015. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Flash Wear-Leveling Архівавана 24 чэрвеня 2016.
Micron Technology, Inc. — NOR Flash | Memory and Storage (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 10 верасня 2017. Праверана 3 кастрычніка 2017.
«Из восьми /кристаллов/ можно сформировать чип флеш-памяти на 128 Гб (Eight can be combined to produce … 128GB flash memory chip)»(англ.) Архівавана 27 красавіка 2012.
http://www.onfi.org/docs/ONFI_1_0_Gold.pdf Архівавана 28 лістапада 2007.
http://www.onfi.org/onfimembers.html Архівавана 16 кастрычніка 2007.

xbitlabs.com

«Многокристальный модуль флеш-памяти NAND со стеком из 16-ти кристаллов NAND (NAND flash MCP (multi-chip package) with a 16-die NAND stack)» Архівавана 4 чэрвеня 2012. (англ.)