Флэш-памяць (Belarusian Wikipedia)

http://www.altec-cs.com/downloads/altec_white_paper/WP_Avoiding_premature_failures_of_NAND_Flash_memory_for_duplex-printing_e10.pdf Архівавана 4 сакавіка 2016. «Resulting from the continuous reduction of the structure size of the flash memory chips, 2-bit MLC and 3-bit MLC (TLC) NAND flash memory …sometimes only allows 1,000 P/E cycles (MLC) and/or only a few hundred P/E cycles (TLC) per flash memory cell before degradation»; «Table 1: Typical P/E cycles …»

anandtech.com (Global: 1,850^th place; Belarusian: 3,679^th place)

Kristian Vättö,Understanding TLC NAND Архівавана 25 ліпеня 2013. // Anandtech, February 23, 2012
Anand, Lal Shimpi (July 25, 2013). Samsung SSD 840 EVO Review: 120GB, 250GB, 500GB, 750GB & 1TB Models Tested. AnandTech. Архівавана з арыгінала 9 студзеня 2015. Праверана 9 January 2015. «Samsung calls its latest NAND process 10nm-class or 1x-nm, which can refer to feature sizes anywhere from 10nm to 19nm but we’ve also heard it referred to as 19nm TLC.»
Lal Shimpi, Anand (2 December 2010). Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates. Anandtech. Архівавана з арыгінала 3 снежня 2010. Праверана 2 December 2010.

archive.today (Global: 28^th place; Belarusian: 28^th place)

ELJonline:Flash Filesystems for Embedded Linux Systems — Linux For Devices Articles — Linux for Devices (нявызн.). Архівавана з першакрыніцы 5 снежня 2012. Праверана 3 кастрычніка 2017.
Introducing YAFFS, the first NAND-specific flash file system — News — Linux for Devices (нявызн.). Архівавана з першакрыніцы 12 верасня 2012. Праверана 3 кастрычніка 2017.

bbc.co.uk (Global: 11^th place; Belarusian: 42^nd place)

news.bbc.co.uk

R.I.P. Floppy Disk // BBC NEWS, UK, 1 april 2003

books.google.ru (Global: 330^th place; Belarusian: 123^rd place)

Hasso Plattner, Alexander. Zeier. In-Memory Data Management: Technology and Applications. — SpringerLink : Bücher. — Springer, 2012. — С. 45. — 267 с. — ISBN 3-642-29575-4.

chinaflashmarket.com (Global: low place; Belarusian: low place)

en.chinaflashmarket.com

Exhibit 3: NAND Flash interface standards development of different manufactories (англ.). 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (13 студзеня 2013). Праверана 9 студзеня 2015.(англ.) . 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (2013-01-13). Праверана 9 студзеня 2015.
NAND Flash related product application market (англ.). 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (13 студзеня 2013). Праверана 9 студзеня 2015.(англ.) . 2012 NAND Flash market annual report. Industry analysis report. ChinaFlashMarket.com (2013-01-13). Праверана 9 студзеня 2015.

chipworks.com (Global: low place; Belarusian: low place)

Dick James (August 5, 2014). The Second Shoe Drops – Samsung V-NAND Flash(англ.). ChipWorks. Архівавана з арыгінала 1 студзеня 2015. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

dell.com (Global: 8,986^th place; Belarusian: low place)

Solid State Drive (SSD) FAQ // Dell: «6. I have unplugged my SSD drive and put it into storage. How long can I expect the drive to retain my data without needing to plug the drive back in? … In MLC and SLC, this can be as low as 3 months and best case can be more than 10 years»

demartek.com (Global: low place; Belarusian: low place)

Dennis Martin. NAND Flash – Endurance (нявызн.)(недаступная спасылка). Demartek, Storage Decisions Conference (11-12 June 2013). — «MLC typical life 10,000 or fewer write cycles  MLC-2: 3,000 – 10,000 write cycles  MLC-3: 300 – 3,000 write cycles» Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 студзеня 2015.

doi.org (Global: 2^nd place; Belarusian: 10^th place)

Overview of emerging nonvolatile memory technologies // Nanoscale Res Lett. 2014; 9(1): 526. Sep 25, 2014. doi:10.1186/1556-276X-9-526

eetasia.com (Global: low place; Belarusian: low place)

Nirmal Ramaswamy, Thomas Graettinger, (Micron) (2013-07-05). NAND flash scaling: 20nm node and below. Here are some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology (PDF)(англ.). EE Times-Asia. Архівавана з арыгінала (PDF) 12 студзеня 2015. Праверана 2015-01-11. This had already become a problem at the 25nm node requiring the deployment of airgap between the cells to reduce interference {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)Папярэджанні CS1: розныя назвы: authors list (спасылка)

eetimes.com (Global: 4,224^th place; Belarusian: low place)

Clarke, Peter (20 November 2012). «Samsung takes NAND memory below 20-nm» Архівавана 28 лістапада 2012. eetimes.com. Retrieved 21 December 2012.
Jeongdong Choe (TechInsights) (2013-07-25). Comparing Leading-Edge NAND Flash Memories(англ.). EETimes. Праверана 2015-01-11. All the NAND manufacturers adopted an air-gap process to achieve high performance and reliability. Toshiba implemented an air-gap process on its 19nm NAND device, while Samsung adopted it on 21nm. IMFT has used a more mature air-gap process on both the wordline and bitline structure since its 25nm NAND technology. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Peter Clarke (2014-08-25). NAND, DRAM 3D-Transition Roadmaps(англ.). EETimes. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Rick Merritt (2014-08-05). Samsung Tips 3-Bit Vertical NAND. Korean giant starts smart storage initiative(англ.). EETimes. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

extremetech.com (Global: 6,470^th place; Belarusian: low place)

SanDisk's collosal 4TB SSD: Does this mean SSDs will soon provide more storage than hard drives?(англ.). ExtremeTech. May 5, 2014. Праверана 2015-01-09. but no one is even talking about QLC (quad-level cell) NAND — there's just no way to store voltage at that fine-grained level while retaining enough write cycles to deploy the tech effectively. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)(англ.) , ExtremeTech (May 5, 2014). Праверана 9 студзеня 2015. «but no one is even talking about QLC (quad-level cell) NAND — there’s just no way to store voltage at that fine-grained level while retaining enough write cycles to deploy the tech effectively.».
Ed Oswald (February 20, 2012). Current solid-state drive technology is doomed, says Microsoft Research(англ.). ExtremeTech. Праверана 2015-01-09. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)

flashmemorysummit.com (Global: low place; Belarusian: low place)

Edward Grochowski, Robert E.Fontana, Future Technology Challenges For NAND Flash and HDD Products Архівавана 9 студзеня 2015. // Flash Memory Summit, 2012(англ.) : slide 6 «Projected NAND Flash Memory Circuit Density Roadmap»

geek.com (Global: 8,726^th place; Belarusian: 6,167^th place)

«Из восьми /кристаллов/ можно сформировать чип флеш-памяти на 128 Гб (Eight can be combined to produce … 128GB flash memory chip)»(англ.) Архівавана 27 красавіка 2012.

ieee.org (Global: 912^th place; Belarusian: 1,003^rd place)

spectrum.ieee.org

Flash Memory Survives 100 Million Cycles — IEEE Spectrum

ieeexplore.ieee.org

Kim, Kinam; Koh, Gwan-Hyeob (16 May 2004). Future Memory Technology including Emerging New Memories (PDF). Serbia and Montenegro: Proceedings of the 24th International Conference on Microelectronics (апублікавана 2004-05). pp. 377–384. Праверана 15 August 2008. {{cite book}}: Праверце значэнне даты ў: |publication-date= (даведка)

itrs.net (Global: low place; Belarusian: low place)

Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Архівавана 18 красавіка 2012. // ITRS 2010
Table ORTC1 Summary 2013 ORTC Technology Trend Targets Архівавана 21 студзеня 2015. // ITRS из ITRS 2013 EDITION Архівавана 21 верасня 2014.

ixbt.com (Global: 5,699^th place; Belarusian: 2,632^nd place)

iXBT.com :: Все новости :: Intel и Micron освоили выпуск 3-битной флэш-памяти типа NAND по нормам 25 нм(недаступная спасылка)

lenovo.com (Global: 8,286^th place; Belarusian: low place)

Comparison of NAND Flash Technologies Used in SolidState Storage, IBM 2010 «Table 1. Endurance performance for various technology nodes»

linuxdevices.com (Global: low place; Belarusian: low place)

ELJonline:Flash Filesystems for Embedded Linux Systems — Linux For Devices Articles — Linux for Devices (нявызн.). Архівавана з першакрыніцы 5 снежня 2012. Праверана 3 кастрычніка 2017.
Introducing YAFFS, the first NAND-specific flash file system — News — Linux for Devices (нявызн.). Архівавана з першакрыніцы 12 верасня 2012. Праверана 3 кастрычніка 2017.

micron.com (Global: low place; Belarusian: low place)

micron.com

Flash Memory Technology Direction Архівавана 11 верасня 2014., Jim Cooke, 2007 Reducing Read Disturb ""«Rule of thumb for excessive reads per block between ERASE operations: SLC — 1,000,000 READ cycles; MLC — 100,000 READ cycles»
Micron Technology, Inc. — NOR Flash | Memory and Storage (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 10 верасня 2017. Праверана 3 кастрычніка 2017.

download.micron.com

Design and Use Considerations for NAND Flash memory (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 19 ліпеня 2011. Праверана 3 кастрычніка 2017.

msdn.com (Global: 4,626^th place; Belarusian: 2,047^th place)

blogs.msdn.com

ReadyBoost — Using Your USB Key to Speed Up Windows Vista — Tom Archer’s Blog — Site Home — MSDN Blogs

newatlas.com (Global: 5,974^th place; Belarusian: low place)

Samsung moves into mass production of 3D flash memory

nih.gov (Global: 5^th place; Belarusian: 31^st place)

ncbi.nlm.nih.gov

Overview of emerging nonvolatile memory technologies // Nanoscale Res Lett. 2014; 9(1): 526. Sep 25, 2014. doi:10.1186/1556-276X-9-526

nikkeibp.co.jp (Global: 1,879^th place; Belarusian: low place)

techon.nikkeibp.co.jp

Kawamatus, Tatsuya. TECHNOLOGY FOR MANAGING NAND FLASH (нявызн.). Hagiwara sys-com co., LTD. Праверана 1 August 2011.(недаступная спасылка)

nuvoton.com (Global: low place; Belarusian: low place)

http://www.nuvoton.com/NuvotonMOSS/Community/ProductInfo.aspx?tp_GUID=d2589477-840d-4046-9c3a-2e0e457048b3 Архівавана 7 ліпеня 2011. ISD ChipCorder

objective-analysis.com (Global: low place; Belarusian: low place)

Samsung samples 3D NAND SSD (нявызн.)(недаступная спасылка). "ObjectiveAnalysis" (5 ліпеня 2026). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.: «.Samsung introduced its 19nm NAND by calling it a „10nm-class“ product. Once again, the press misunderstood and broadcast to the world that Samsung was ahead of all of its competitors»

onfi.org (Global: low place; Belarusian: low place)

http://www.onfi.org/docs/ONFI_1_0_Gold.pdf Архівавана 28 лістапада 2007.
http://www.onfi.org/onfimembers.html Архівавана 16 кастрычніка 2007.

pcworld.com (Global: 1,889^th place; Belarusian: 2,175^th place)

Samsung's 840 EVO SSD family: Fast, large, and in charge. PCWorld. 7/25/2013. Праверана 9 January 2015. {{cite news}}: Праверце значэнне даты ў: |date= (даведка): «the 19nm manufacturing process used to produce the NAND. Samsung for some reason is calling this 10nm-class, or 1x NAND, but they assured us that it’s 19nm.»

scu.edu (Global: low place; Belarusian: low place)

cse.scu.edu

Thomas Schwarz. Floating Gate Basics (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 1 кастрычніка 2017. Праверана 3 кастрычніка 2017.

snia.org (Global: low place; Belarusian: low place)

Tom Coughlin; Ed Grochowski. Thanks for the Memories: Emerging Non-Volatile Memory Technologies (англ.). Coughlin Associates; SNIA 2014 Storage Developer Conference (15 верасня 2014). Праверана 9 студзеня 2015.(англ.) . Coughlin Associates; SNIA 2014 Storage Developer Conference (September 15, 2014). Праверана 9 студзеня 2015.

techinsights.com (Global: low place; Belarusian: low place)

Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2013). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2014). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.

tomshardware.com (Global: 3,042^nd place; Belarusian: 3,710^th place)

Samsung Mass Producing 128Gb 3-bit MLC NAND Flash Kevin Parrish // Tom’s Hardware, 11 April 2013

toshiba.co.jp (Global: low place; Belarusian: low place)

Toshiba Starts World’s First Sample Shipment of 64-Layer 3D Flash Memory

trendforce.com (Global: low place; Belarusian: low place)

seminar.trendforce.com

Sean Yang. Supply Dynamics: Limited Growth &Constant Share. Market Share (Production Base) (англ.). 2014 NAND Flash Market Update. Supply, Demand and Beyond. TrendForce. Праверана 9 студзеня 2015.(англ.) . 2014 NAND Flash Market Update. Supply, Demand and Beyond. TrendForce. Праверана 9 студзеня 2015.

ucsd.edu (Global: 2,146^th place; Belarusian: 2,915^th place)

nvmw.ucsd.edu

A 7.8MB/s 64Gb 4-Bit/Cell NAND Flash Memory on 43nm CMOS Technology Архівавана 9 студзеня 2015. // Sandisk, NVMW — UCSD, 11-13 April 2010: «4-Bit/Cell (16LC)»

usenix.org (Global: 7,359^th place; Belarusian: low place)

static.usenix.org

Simona Boboila, Peter Desnoyers Write Endurance in Flash Drives: Measurements and Analysis(англ.) // FAST. — San Jose, California: Northeastern University, 2010.

web.archive.org (Global: 1^st place; Belarusian: 2^nd place)

Dennis Martin. NAND Flash – Endurance (нявызн.)(недаступная спасылка). Demartek, Storage Decisions Conference (11-12 June 2013). — «MLC typical life 10,000 or fewer write cycles  MLC-2: 3,000 – 10,000 write cycles  MLC-3: 300 – 3,000 write cycles» Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 студзеня 2015.
Kristian Vättö,Understanding TLC NAND Архівавана 25 ліпеня 2013. // Anandtech, February 23, 2012
A 7.8MB/s 64Gb 4-Bit/Cell NAND Flash Memory on 43nm CMOS Technology Архівавана 9 студзеня 2015. // Sandisk, NVMW — UCSD, 11-13 April 2010: «4-Bit/Cell (16LC)»
http://www.nuvoton.com/NuvotonMOSS/Community/ProductInfo.aspx?tp_GUID=d2589477-840d-4046-9c3a-2e0e457048b3 Архівавана 7 ліпеня 2011. ISD ChipCorder
Thomas Schwarz. Floating Gate Basics (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 1 кастрычніка 2017. Праверана 3 кастрычніка 2017.
«Многокристальный модуль флеш-памяти NAND со стеком из 16-ти кристаллов NAND (NAND flash MCP (multi-chip package) with a 16-die NAND stack)» Архівавана 4 чэрвеня 2012. (англ.)
http://www.altec-cs.com/downloads/altec_white_paper/WP_Avoiding_premature_failures_of_NAND_Flash_memory_for_duplex-printing_e10.pdf Архівавана 4 сакавіка 2016. «Resulting from the continuous reduction of the structure size of the flash memory chips, 2-bit MLC and 3-bit MLC (TLC) NAND flash memory …sometimes only allows 1,000 P/E cycles (MLC) and/or only a few hundred P/E cycles (TLC) per flash memory cell before degradation»; «Table 1: Typical P/E cycles …»
Design and Use Considerations for NAND Flash memory (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 19 ліпеня 2011. Праверана 3 кастрычніка 2017.
Flash Memory Technology Direction Архівавана 11 верасня 2014., Jim Cooke, 2007 Reducing Read Disturb ""«Rule of thumb for excessive reads per block between ERASE operations: SLC — 1,000,000 READ cycles; MLC — 100,000 READ cycles»
Clarke, Peter (20 November 2012). «Samsung takes NAND memory below 20-nm» Архівавана 28 лістапада 2012. eetimes.com. Retrieved 21 December 2012.
Anand, Lal Shimpi (July 25, 2013). Samsung SSD 840 EVO Review: 120GB, 250GB, 500GB, 750GB & 1TB Models Tested. AnandTech. Архівавана з арыгінала 9 студзеня 2015. Праверана 9 January 2015. «Samsung calls its latest NAND process 10nm-class or 1x-nm, which can refer to feature sizes anywhere from 10nm to 19nm but we’ve also heard it referred to as 19nm TLC.»
Samsung samples 3D NAND SSD (нявызн.)(недаступная спасылка). "ObjectiveAnalysis" (5 ліпеня 2026). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.: «.Samsung introduced its 19nm NAND by calling it a „10nm-class“ product. Once again, the press misunderstood and broadcast to the world that Samsung was ahead of all of its competitors»
Assessment of the Potential & Maturity of Selected Emerging Research Memory Technologies Архівавана 18 красавіка 2012. // ITRS 2010
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2013). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Table ORTC1 Summary 2013 ORTC Technology Trend Targets Архівавана 21 студзеня 2015. // ITRS из ITRS 2013 EDITION Архівавана 21 верасня 2014.
Technology Roadmap for NAND Flash Memory (нявызн.)(недаступная спасылка). techinsights (1 красавіка 2014). Архівавана з першакрыніцы 9 студзеня 2015. Праверана 9 January 2015.
Edward Grochowski, Robert E.Fontana, Future Technology Challenges For NAND Flash and HDD Products Архівавана 9 студзеня 2015. // Flash Memory Summit, 2012(англ.) : slide 6 «Projected NAND Flash Memory Circuit Density Roadmap»
Nirmal Ramaswamy, Thomas Graettinger, (Micron) (2013-07-05). NAND flash scaling: 20nm node and below. Here are some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology (PDF)(англ.). EE Times-Asia. Архівавана з арыгінала (PDF) 12 студзеня 2015. Праверана 2015-01-11. This had already become a problem at the 25nm node requiring the deployment of airgap between the cells to reduce interference {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)Папярэджанні CS1: розныя назвы: authors list (спасылка)
Dick James (August 5, 2014). The Second Shoe Drops – Samsung V-NAND Flash(англ.). ChipWorks. Архівавана з арыгінала 1 студзеня 2015. Праверана 2015-01-11. {{cite news}}: Пададзена больш чым адно значэнне |lang= і |language= specified (даведка)
Lal Shimpi, Anand (2 December 2010). Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates. Anandtech. Архівавана з арыгінала 3 снежня 2010. Праверана 2 December 2010.
Flash Wear-Leveling Архівавана 24 чэрвеня 2016.
Micron Technology, Inc. — NOR Flash | Memory and Storage (нявызн.)(недаступная спасылка). Архівавана з першакрыніцы 10 верасня 2017. Праверана 3 кастрычніка 2017.
«Из восьми /кристаллов/ можно сформировать чип флеш-памяти на 128 Гб (Eight can be combined to produce … 128GB flash memory chip)»(англ.) Архівавана 27 красавіка 2012.
http://www.onfi.org/docs/ONFI_1_0_Gold.pdf Архівавана 28 лістапада 2007.
http://www.onfi.org/onfimembers.html Архівавана 16 кастрычніка 2007.

xbitlabs.com (Global: low place; Belarusian: low place)

«Многокристальный модуль флеш-памяти NAND со стеком из 16-ти кристаллов NAND (NAND flash MCP (multi-chip package) with a 16-die NAND stack)» Архівавана 4 чэрвеня 2012. (англ.)

Флэш-памяць (Belarusian Wikipedia)

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micron.com

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anandtech.com (Global: 1,850^th place; Belarusian: 3,679^th place)

archive.today (Global: 28^th place; Belarusian: 28^th place)

bbc.co.uk (Global: 11^th place; Belarusian: 42^nd place)

books.google.ru (Global: 330^th place; Belarusian: 123^rd place)

dell.com (Global: 8,986^th place; Belarusian: low place)

doi.org (Global: 2^nd place; Belarusian: 10^th place)

eetimes.com (Global: 4,224^th place; Belarusian: low place)

extremetech.com (Global: 6,470^th place; Belarusian: low place)

geek.com (Global: 8,726^th place; Belarusian: 6,167^th place)

ieee.org (Global: 912^th place; Belarusian: 1,003^rd place)

ixbt.com (Global: 5,699^th place; Belarusian: 2,632^nd place)

lenovo.com (Global: 8,286^th place; Belarusian: low place)

msdn.com (Global: 4,626^th place; Belarusian: 2,047^th place)

newatlas.com (Global: 5,974^th place; Belarusian: low place)

nih.gov (Global: 5^th place; Belarusian: 31^st place)

nikkeibp.co.jp (Global: 1,879^th place; Belarusian: low place)

pcworld.com (Global: 1,889^th place; Belarusian: 2,175^th place)

tomshardware.com (Global: 3,042^nd place; Belarusian: 3,710^th place)

ucsd.edu (Global: 2,146^th place; Belarusian: 2,915^th place)

usenix.org (Global: 7,359^th place; Belarusian: low place)

web.archive.org (Global: 1^st place; Belarusian: 2^nd place)