Epitàxia (Catalan Wikipedia)

Analysis of information sources in references of the Wikipedia article "Epitàxia" in Catalan language version.

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9doi.org

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7harvard.edu

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5nih.gov

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4books.google.com

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3arxiv.org

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1google.cat

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1web.archive.org

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1sciencenordic.com

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1worldcat.org

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arxiv.org

Tang, Shujie; Wang, Haomin; Wang, Huishan «Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride». Nature Communications, vol. 6, 6499, 2015, pàg. 6499. arXiv: 1503.02806. Bibcode: 2015NatCo...6E6499T. DOI: 10.1038/ncomms7499. PMC: 4382696. PMID: 25757864.
Chen, Lingxiu; He, Li; Wang, Huishan «Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches». Nature Communications, vol. 8, 2017, 2017, pàg. 14703. arXiv: 1703.03145. Bibcode: 2017NatCo...814703C. DOI: 10.1038/ncomms14703. PMC: 5347129. PMID: 28276532.
Chen, Lingxiu; Wang, Haomin; Tang, Shujie «Edge control of graphene domains grown on hexagonal boron nitride». Nanoscale, vol. 9, 32, 2017, pàg. 1–6. arXiv: 1706.01655. Bibcode: 2017arXiv170601655C. DOI: 10.1039/C7NR02578E. PMID: 28580985.

books.google.com

Morgan, D. V.; Board, K. [Epitàxia, p. 23, a Google Books An Introduction To Semiconductor Microtechnology]. 2nd. Chichester, West Sussex, England: John Wiley & Sons, 1991, p. 23. ISBN 978-0471924784.
Capper, Peter; Mauk, Michael. [Epitàxia, p. 135, a Google Books Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials] (en anglès). John Wiley & Sons, 2007, p. 134–135. ISBN 9780470319499.
Farrow, R. F. C.; Parkin, S. S. P.; Dobson, P. J. [et al.].. [Epitàxia, p. 192, a Google Books Thin Film Growth Techniques for Low-Dimensional Structures] (en anglès). Springer Science & Business Media, 2013, p. 174–176. ISBN 9781468491456.
Luque, A.; Sala, G.; Palz, Willeke [et al.].. [Epitàxia, p. 694, a Google Books Tenth E.C. Photovoltaic Solar Energy Conference: Proceedings of the International Conference, held at Lisbon, Portugal, 8–12 April 1991] (en anglès). Springer, 2012, p. 694. ISBN 9789401136228.

doi.org

dx.doi.org

M. Schreck et al., Appl. Phys. Lett. 78, 192 (2001); doi:10.1063/1.1337648
Tang, Shujie; Wang, Haomin; Wang, Huishan «Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride». Nature Communications, vol. 6, 6499, 2015, pàg. 6499. arXiv: 1503.02806. Bibcode: 2015NatCo...6E6499T. DOI: 10.1038/ncomms7499. PMC: 4382696. PMID: 25757864.
Chen, Lingxiu; He, Li; Wang, Huishan «Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches». Nature Communications, vol. 8, 2017, 2017, pàg. 14703. arXiv: 1703.03145. Bibcode: 2017NatCo...814703C. DOI: 10.1038/ncomms14703. PMC: 5347129. PMID: 28276532.
Chen, Lingxiu; Wang, Haomin; Tang, Shujie «Edge control of graphene domains grown on hexagonal boron nitride». Nanoscale, vol. 9, 32, 2017, pàg. 1–6. arXiv: 1706.01655. Bibcode: 2017arXiv170601655C. DOI: 10.1039/C7NR02578E. PMID: 28580985.
Waldmann, T. «Growth of an oligopyridine adlayer on Ag(100) – A scanning tunnelling microscopy study». Physical Chemistry Chemical Physics, vol. 13, 46, 2011, pàg. 20724–8. Bibcode: 2011PCCP...1320724W. DOI: 10.1039/C1CP22546D. PMID: 21952443.
Waldmann, T. «The role of surface defects in large organic molecule adsorption: substrate configuration effects». Physical Chemistry Chemical Physics, vol. 14, 30, 2012, pàg. 10726-31. Bibcode: 2012PCCP...1410726W. DOI: 10.1039/C2CP40800G. PMID: 22751288.
Katterloher, Reinhard O.; Jakob, Gerd; Konuma, Mitsuharu; Krabbe, Alfred; Haegel, Nancy M.; Samperi, S. A.; Beeman, Jeffrey W.; Haller, Eugene E. «Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors». Infrared Spaceborne Remote Sensing Ix, vol. 4486, 08-02-2002, pàg. 200–209. Bibcode: 2002SPIE.4486..200K. DOI: 10.1117/12.455132.
Custer, J.S.; Polman, A.; Pinxteren, H. M. «Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon». Journal of Applied Physics, vol. 75, 6, 15-03-1994, pàg. 2809. Bibcode: 1994JAP....75.2809C. DOI: 10.1063/1.356173.
Cheng, K. Y. «Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications». Proceedings of the IEEE, vol. 85, 11, 11-1997, pàg. 1694–1714. DOI: 10.1109/5.649646. ISSN: 0018-9219.

google.cat

books.google.cat

Udo W. Pohl. Epitaxy of Semiconductors: Introduction to Physical Principles. Springer Science & Business Media, 11 January 2013, p. 4–6. ISBN 978-3-642-32970-8.

harvard.edu

adsabs.harvard.edu

Tang, Shujie; Wang, Haomin; Wang, Huishan «Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride». Nature Communications, vol. 6, 6499, 2015, pàg. 6499. arXiv: 1503.02806. Bibcode: 2015NatCo...6E6499T. DOI: 10.1038/ncomms7499. PMC: 4382696. PMID: 25757864.
Chen, Lingxiu; He, Li; Wang, Huishan «Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches». Nature Communications, vol. 8, 2017, 2017, pàg. 14703. arXiv: 1703.03145. Bibcode: 2017NatCo...814703C. DOI: 10.1038/ncomms14703. PMC: 5347129. PMID: 28276532.
Chen, Lingxiu; Wang, Haomin; Tang, Shujie «Edge control of graphene domains grown on hexagonal boron nitride». Nanoscale, vol. 9, 32, 2017, pàg. 1–6. arXiv: 1706.01655. Bibcode: 2017arXiv170601655C. DOI: 10.1039/C7NR02578E. PMID: 28580985.
Waldmann, T. «Growth of an oligopyridine adlayer on Ag(100) – A scanning tunnelling microscopy study». Physical Chemistry Chemical Physics, vol. 13, 46, 2011, pàg. 20724–8. Bibcode: 2011PCCP...1320724W. DOI: 10.1039/C1CP22546D. PMID: 21952443.
Waldmann, T. «The role of surface defects in large organic molecule adsorption: substrate configuration effects». Physical Chemistry Chemical Physics, vol. 14, 30, 2012, pàg. 10726-31. Bibcode: 2012PCCP...1410726W. DOI: 10.1039/C2CP40800G. PMID: 22751288.
Katterloher, Reinhard O.; Jakob, Gerd; Konuma, Mitsuharu; Krabbe, Alfred; Haegel, Nancy M.; Samperi, S. A.; Beeman, Jeffrey W.; Haller, Eugene E. «Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors». Infrared Spaceborne Remote Sensing Ix, vol. 4486, 08-02-2002, pàg. 200–209. Bibcode: 2002SPIE.4486..200K. DOI: 10.1117/12.455132.
Custer, J.S.; Polman, A.; Pinxteren, H. M. «Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon». Journal of Applied Physics, vol. 75, 6, 15-03-1994, pàg. 2809. Bibcode: 1994JAP....75.2809C. DOI: 10.1063/1.356173.

nih.gov

ncbi.nlm.nih.gov

Tang, Shujie; Wang, Haomin; Wang, Huishan «Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride». Nature Communications, vol. 6, 6499, 2015, pàg. 6499. arXiv: 1503.02806. Bibcode: 2015NatCo...6E6499T. DOI: 10.1038/ncomms7499. PMC: 4382696. PMID: 25757864.
Chen, Lingxiu; He, Li; Wang, Huishan «Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches». Nature Communications, vol. 8, 2017, 2017, pàg. 14703. arXiv: 1703.03145. Bibcode: 2017NatCo...814703C. DOI: 10.1038/ncomms14703. PMC: 5347129. PMID: 28276532.
Chen, Lingxiu; Wang, Haomin; Tang, Shujie «Edge control of graphene domains grown on hexagonal boron nitride». Nanoscale, vol. 9, 32, 2017, pàg. 1–6. arXiv: 1706.01655. Bibcode: 2017arXiv170601655C. DOI: 10.1039/C7NR02578E. PMID: 28580985.
Waldmann, T. «Growth of an oligopyridine adlayer on Ag(100) – A scanning tunnelling microscopy study». Physical Chemistry Chemical Physics, vol. 13, 46, 2011, pàg. 20724–8. Bibcode: 2011PCCP...1320724W. DOI: 10.1039/C1CP22546D. PMID: 21952443.
Waldmann, T. «The role of surface defects in large organic molecule adsorption: substrate configuration effects». Physical Chemistry Chemical Physics, vol. 14, 30, 2012, pàg. 10726-31. Bibcode: 2012PCCP...1410726W. DOI: 10.1039/C2CP40800G. PMID: 22751288.

sciencenordic.com

Christensen, Arnfinn. «Speedy production of silicon for solar cells» (en anglès). sciencenordic.com. ScienceNordic. Arxivat de l'original el 4 d’octubre 2017. [Consulta: 3 octubre 2017].

web.archive.org

Christensen, Arnfinn. «Speedy production of silicon for solar cells» (en anglès). sciencenordic.com. ScienceNordic. Arxivat de l'original el 4 d’octubre 2017. [Consulta: 3 octubre 2017].

worldcat.org

Cheng, K. Y. «Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications». Proceedings of the IEEE, vol. 85, 11, 11-1997, pàg. 1694–1714. DOI: 10.1109/5.649646. ISSN: 0018-9219.