GMR-Effekt (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "GMR-Effekt" in German language version.

refsWebsite
Global rank German rank
123rd place
6th place
2nd place
3rd place
149th place
298th place
652nd place
864th place
301st place
369th place
1,131st place
1,159th place
7th place
19th place
low place
3,040th place
low place
4,643rd place
low place
3,413th place

all-electronics.de

doi.org

  • Atsufumi Hirohata, Keisuke Yamada, Yoshinobu Nakatani, Ioan-Lucian Prejbeanu, Bernard Diény: Review on spintronics: Principles and device applications. In: Journal of Magnetism and Magnetic Materials. Band 509, 1. September 2020, ISSN 0304-8853, S. 166711, doi:10.1016/j.jmmm.2020.166711 (englisch, sciencedirect.com [abgerufen am 6. Dezember 2021]).
  • W. Patrick McCray: How spintronics went from the lab to the iPod. In: Nature Nanotechnology. Band 4, Nr. 1, Januar 2009, ISSN 1748-3387, S. 2–4, doi:10.1038/nnano.2008.380 (englisch).
  • Albert Fert: Nobel Lecture: Origin, development, and future of spintronics. In: Reviews of Modern Physics. Band 80, Nr. 4, 17. Dezember 2008, ISSN 0034-6861, S. 1517–1530, doi:10.1103/revmodphys.80.1517 (englisch).
  • Sabpreet Bhatti, Rachid Sbiaa, Atsufumi Hirohata, Hideo Ohno, Shunsuke Fukami: Spintronics based random access memory: a review. In: Materials Today. Band 20, Nr. 9, 1. November 2017, ISSN 1369-7021, S. 530–548, doi:10.1016/j.mattod.2017.07.007 (sciencedirect.com [abgerufen am 6. Dezember 2021]).
  • D. Edelstein, M. Rizzolo, D. Sil, A. Dutta, J. DeBrosse: A 14 nm Embedded STT-MRAM CMOS Technology. In: 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, San Francisco, CA, USA 2020, ISBN 978-1-72818-888-1, S. 11.5.1–11.5.4, doi:10.1109/IEDM13553.2020.9371922 (ieee.org [abgerufen am 6. Dezember 2021]).
  • W. J. Gallagher, S. S. P. Parkin: Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip. In: IBM Journal of Research and Development. Band 50, Nr. 1, Januar 2006, ISSN 0018-8646, S. 5–23, doi:10.1147/rd.501.0005 (ieee.org [abgerufen am 6. Dezember 2021]).

fz-juelich.de

ibm.com

ieee.org

ieeexplore.ieee.org

  • D. Edelstein, M. Rizzolo, D. Sil, A. Dutta, J. DeBrosse: A 14 nm Embedded STT-MRAM CMOS Technology. In: 2020 IEEE International Electron Devices Meeting (IEDM). IEEE, San Francisco, CA, USA 2020, ISBN 978-1-72818-888-1, S. 11.5.1–11.5.4, doi:10.1109/IEDM13553.2020.9371922 (ieee.org [abgerufen am 6. Dezember 2021]).
  • W. J. Gallagher, S. S. P. Parkin: Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip. In: IBM Journal of Research and Development. Band 50, Nr. 1, Januar 2006, ISSN 0018-8646, S. 5–23, doi:10.1147/rd.501.0005 (ieee.org [abgerufen am 6. Dezember 2021]).

nobelprize.org

nytimes.com

  • John Markoff: Redefining the Architecture of Memory. In: The New York Times. 11. September 2007, ISSN 0362-4331 (englisch, nytimes.com [abgerufen am 6. Dezember 2021]).

sciencedirect.com

  • Atsufumi Hirohata, Keisuke Yamada, Yoshinobu Nakatani, Ioan-Lucian Prejbeanu, Bernard Diény: Review on spintronics: Principles and device applications. In: Journal of Magnetism and Magnetic Materials. Band 509, 1. September 2020, ISSN 0304-8853, S. 166711, doi:10.1016/j.jmmm.2020.166711 (englisch, sciencedirect.com [abgerufen am 6. Dezember 2021]).
  • Sabpreet Bhatti, Rachid Sbiaa, Atsufumi Hirohata, Hideo Ohno, Shunsuke Fukami: Spintronics based random access memory: a review. In: Materials Today. Band 20, Nr. 9, 1. November 2017, ISSN 1369-7021, S. 530–548, doi:10.1016/j.mattod.2017.07.007 (sciencedirect.com [abgerufen am 6. Dezember 2021]).

weltderphysik.de

zdb-katalog.de

  • Atsufumi Hirohata, Keisuke Yamada, Yoshinobu Nakatani, Ioan-Lucian Prejbeanu, Bernard Diény: Review on spintronics: Principles and device applications. In: Journal of Magnetism and Magnetic Materials. Band 509, 1. September 2020, ISSN 0304-8853, S. 166711, doi:10.1016/j.jmmm.2020.166711 (englisch, sciencedirect.com [abgerufen am 6. Dezember 2021]).
  • W. Patrick McCray: How spintronics went from the lab to the iPod. In: Nature Nanotechnology. Band 4, Nr. 1, Januar 2009, ISSN 1748-3387, S. 2–4, doi:10.1038/nnano.2008.380 (englisch).
  • Albert Fert: Nobel Lecture: Origin, development, and future of spintronics. In: Reviews of Modern Physics. Band 80, Nr. 4, 17. Dezember 2008, ISSN 0034-6861, S. 1517–1530, doi:10.1103/revmodphys.80.1517 (englisch).
  • John Markoff: Redefining the Architecture of Memory. In: The New York Times. 11. September 2007, ISSN 0362-4331 (englisch, nytimes.com [abgerufen am 6. Dezember 2021]).
  • Sabpreet Bhatti, Rachid Sbiaa, Atsufumi Hirohata, Hideo Ohno, Shunsuke Fukami: Spintronics based random access memory: a review. In: Materials Today. Band 20, Nr. 9, 1. November 2017, ISSN 1369-7021, S. 530–548, doi:10.1016/j.mattod.2017.07.007 (sciencedirect.com [abgerufen am 6. Dezember 2021]).
  • W. J. Gallagher, S. S. P. Parkin: Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip. In: IBM Journal of Research and Development. Band 50, Nr. 1, Januar 2006, ISSN 0018-8646, S. 5–23, doi:10.1147/rd.501.0005 (ieee.org [abgerufen am 6. Dezember 2021]).