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Indiumgalliumarsenid (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Indiumgalliumarsenid" in German language version.

refsWebsite
Global rank German rank
3doi.org
2nd place
3rd place
1fraunhofer.de
7,696th place
870th place

doi.org

  • John C. Woolley, Mathew B. Thomas, Alan G. Thompson: Optical energy gap variation in GaxIn1−xAs alloys. In: Canadian Journal of Physics. 46, Nr. 2, 1968, S. 157–159, doi:10.1139/p68-023
  • T.P. Pearsall: Ga0.47In0.53As: A ternary semiconductor for photodetector applications. In: IEEE Journal of Quantum Electronics. Band 16, Nummer 7, 1980, S. 709–720, doi:10.1109/JQE.1980.1070557
  • T. P. Pearsall, R. W. Hopson Jr.: Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxy. In Journal of Electronical Materials. 7, Nr. 1, 1978, S. 133–146, doi:10.1007/BF02656025.

fraunhofer.de

iaf.fraunhofer.de

  • Arnulf Leuther: Towards Terahertz Circuits – Auf dem Weg zur Terahertz-Schaltung. In: Jahresbericht Fraunhofer-Institut für angewandte Festkörperphysik. 2010 (fraunhofer.de [PDF; abgerufen am 8. Oktober 2013]).