I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S.1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V.
espacenet.com
worldwide.espacenet.com
Patent US6531371: Electrically programmable resistance cross point memory. Angemeldet am 28. Juni 2001, veröffentlicht am 11. März 2003, Anmelder: Sharp Laboratories Of America, Inc., Erfinder: Sheng Teng Hsu, Wei-Wei Zhuang.
harvard.edu
ui.adsabs.harvard.edu
I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S.1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V.
mdpi.com
Mario Lanza: A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. In: Materials. 7 (3). Jahrgang, 2014, S.2155–2182 (mdpi.com).
I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S.1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V.
