Resistive Random Access Memory (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Resistive Random Access Memory" in German language version.

Last modified: 18:03:00, 5 May 2026 (UTC)

Ref.Un. Ref.Website

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11espacenet.com

950^th place

160^th place

11panasonic.com

9,646^th place

8,166^th place

11newelectronics.co.uk

low place

low place

2^nd place

3^rd place

5^th place

7^th place

11adsabs.harvard.edu

14^th place

133^rd place

1,887^th place

1,072^nd place

adsabs.harvard.edu (Global: 14^th place; German: 133^rd place)

ui.adsabs.harvard.edu

I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S. 1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V (englisch).

doi.org (Global: 2^nd place; German: 3^rd place)

I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S. 1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V (englisch).

espacenet.com (Global: 950^th place; German: 160^th place)

worldwide.espacenet.com

Patent US6531371: Electrically programmable resistance cross point memory. Angemeldet am 28. Juni 2001, veröffentlicht am 11. März 2003, Anmelder: Sharp Laboratories Of America, Inc., Erfinder: Sheng Teng Hsu, Wei-Wei Zhuang.‌

mdpi.com (Global: 1,887^th place; German: 1,072^nd place)

Mario Lanza: A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. In: Materials. 7 (3). Jahrgang, 2014, S. 2155–2182 (englisch, mdpi.com).

newelectronics.co.uk (Global: low place; German: low place)

Dialog enters into licensing agreement with GLOBALFOUNDRIES. Abgerufen am 22. Oktober 2020 (englisch).

nih.gov (Global: 5^th place; German: 7^th place)

ncbi.nlm.nih.gov

I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, R. Waser: Nanobatteries in redox-based resistive switches require extension of memristor theory. In: Nature Communications. 4. Jahrgang, 2013, S. 1771, doi:10.1038/ncomms2784, PMID 23612312, PMC 3644102 (freier Volltext), bibcode:2013NatCo...4E1771V (englisch).

panasonic.com (Global: 9,646^th place; German: 8,166^th place)

na.industrial.panasonic.com

Microcontrollers: 8-bit Low Power Microcomputers MN101L Series. Abgerufen am 1. Juni 2017 (englisch).