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Deep-level transient spectroscopy (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Deep-level transient spectroscopy" in English language version.

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16doi.org
2nd place
2nd place
16worldcat.org
5th place
5th place
15harvard.edu
18th place
17th place
2semanticscholar.org
11th place
8th place
2epfl.ch
4,521st place
4,877th place
1patents.google.com
1,182nd place
725th place
1nih.gov
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4th place
1laplacedlts.eu
low place
low place
1ncl.ac.uk
4,362nd place
3,162nd place
1archives-ouvertes.fr
1,031st place
879th place

archives-ouvertes.fr

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doi.org

  • Lang, D. V. (1974). "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors". Journal of Applied Physics. 45 (7). AIP Publishing: 3023–3032. Bibcode:1974JAP....45.3023L. doi:10.1063/1.1663719. ISSN 0021-8979.
  • Elhami Khorasani, Arash; Schroder, Dieter K.; Alford, T. L. (2014). "A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors". IEEE Transactions on Electron Devices. 61 (9). Institute of Electrical and Electronics Engineers (IEEE): 3282–3288. Bibcode:2014ITED...61.3282E. doi:10.1109/ted.2014.2337898. ISSN 0018-9383. S2CID 5895479.
  • Fourches, N. (28 January 1991). "Deep level transient spectroscopy based on conductance transients". Applied Physics Letters. 58 (4). AIP Publishing: 364–366. Bibcode:1991ApPhL..58..364F. doi:10.1063/1.104635. ISSN 0003-6951.
  • Lin, S. W.; Balocco, C.; Missous, M.; Peaker, A. R.; Song, A. M. (3 October 2005). "Coexistence of deep levels with optically active InAs quantum dots". Physical Review B. 72 (16). American Physical Society (APS): 165302. Bibcode:2005PhRvB..72p5302L. doi:10.1103/physrevb.72.165302. ISSN 1098-0121.
  • Antonova, Irina V.; Volodin, Vladimir A.; Neustroev, Efim P.; Smagulova, Svetlana A.; Jedrzejewsi, Jedrzej; Balberg, Isaac (15 September 2009). "Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix". Journal of Applied Physics. 106 (6). AIP Publishing: 064306–064306–6. Bibcode:2009JAP...106f4306A. doi:10.1063/1.3224865. ISSN 0021-8979.
  • Buljan, M.; Grenzer, J.; Holý, V.; Radić, N.; Mišić-Radić, T.; Levichev, S.; Bernstorff, S.; Pivac, B.; Capan, I. (18 October 2010). "Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate". Applied Physics Letters. 97 (16). AIP Publishing: 163117. Bibcode:2010ApPhL..97p3117B. doi:10.1063/1.3504249. ISSN 0003-6951.
  • Nazeeruddin, Mohammad Khaja; Ahn, Tae Kyu; Shin, Jai Kwang; Kim, Yong Su; Yun, Dong-Jin; Kim, Kihong; Park, Jong-Bong; Lee, Jooho; Seol, Minsu (2017-05-17). "Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy". Energy & Environmental Science. 10 (5): 1128–1133. Bibcode:2017EnEnS..10.1128H. doi:10.1039/C7EE00303J. ISSN 1754-5706.
  • Heo, Sung; Seo, Gabseok; Lee, Yonghui; Seol, Minsu; Kim, Seong Heon; Yun, Dong-Jin; Kim, Yongsu; Kim, Kihong; Lee, Junho (2019). "Origins of High Performance and Degradation in the Mixed Perovskite Solar Cells". Advanced Materials. 31 (8): 1805438. Bibcode:2019AdM....3105438H. doi:10.1002/adma.201805438. ISSN 1521-4095. PMID 30614565. S2CID 58578989.
  • Brunwin, R.; Hamilton, B.; Jordan, P.; Peaker, A.R. (1979). "Detection of minority-carrier traps using transient spectroscopy". Electronics Letters. 15 (12). Institution of Engineering and Technology (IET): 349. Bibcode:1979ElL....15..349B. doi:10.1049/el:19790248. ISSN 0013-5194.
  • Hamilton, B.; Peaker, A. R.; Wight, D. R. (1979). "Deep-state-controlled minority-carrier lifetime inn-type gallium phosphide". Journal of Applied Physics. 50 (10). AIP Publishing: 6373–6385. Bibcode:1979JAP....50.6373H. doi:10.1063/1.325728. ISSN 0021-8979.
  • Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.; Emtsev, K. V.; Emtsev, V. V.; Litvinov, V. V.; Murin, L. I.; Dobaczewski, L. (27 December 2004). "Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi". Physical Review B. 70 (23). American Physical Society (APS): 235213. Bibcode:2004PhRvB..70w5213M. doi:10.1103/physrevb.70.235213. ISSN 1098-0121.
  • Dobaczewski, L.; Peaker, A. R.; Bonde Nielsen, K. (2004). "Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors". Journal of Applied Physics. 96 (9). AIP Publishing: 4689–4728. Bibcode:2004JAP....96.4689D. doi:10.1063/1.1794897. ISSN 0021-8979.
  • Dobaczewski, L.; Bernardini, S.; Kruszewski, P.; Hurley, P. K.; Markevich, V. P.; Hawkins, I. D.; Peaker, A. R. (16 June 2008). "Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy" (PDF). Applied Physics Letters. 92 (24). AIP Publishing: 242104. Bibcode:2008ApPhL..92x2104D. doi:10.1063/1.2939001. ISSN 0003-6951.
  • Johnson, N. M.; Bartelink, D. J.; Gold, R. B.; Gibbons, J. F. (1979). "Constant-capacitance DLTS measurement of defect-density profiles in semiconductors". Journal of Applied Physics. 50 (7). AIP Publishing: 4828–4833. Bibcode:1979JAP....50.4828J. doi:10.1063/1.326546. ISSN 0021-8979.
  • Lau, W. S.; Lam, Y. W. (1982). "Analysis of and some design considerations for the constant capacitance DLTS system". International Journal of Electronics. 52 (4). Informa UK Limited: 369–379. doi:10.1080/00207218208901442. ISSN 0020-7217.
  • Hurtes, Ch.; Boulou, M.; Mitonneau, A.; Bois, D. (15 June 1978). "Deep-level spectroscopy in high-resistivity materials". Applied Physics Letters. 32 (12). AIP Publishing: 821–823. Bibcode:1978ApPhL..32..821H. doi:10.1063/1.89929. ISSN 0003-6951.

epfl.ch

infoscience.epfl.ch

harvard.edu

ui.adsabs.harvard.edu

  • Lang, D. V. (1974). "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors". Journal of Applied Physics. 45 (7). AIP Publishing: 3023–3032. Bibcode:1974JAP....45.3023L. doi:10.1063/1.1663719. ISSN 0021-8979.
  • Elhami Khorasani, Arash; Schroder, Dieter K.; Alford, T. L. (2014). "A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors". IEEE Transactions on Electron Devices. 61 (9). Institute of Electrical and Electronics Engineers (IEEE): 3282–3288. Bibcode:2014ITED...61.3282E. doi:10.1109/ted.2014.2337898. ISSN 0018-9383. S2CID 5895479.
  • Fourches, N. (28 January 1991). "Deep level transient spectroscopy based on conductance transients". Applied Physics Letters. 58 (4). AIP Publishing: 364–366. Bibcode:1991ApPhL..58..364F. doi:10.1063/1.104635. ISSN 0003-6951.
  • Lin, S. W.; Balocco, C.; Missous, M.; Peaker, A. R.; Song, A. M. (3 October 2005). "Coexistence of deep levels with optically active InAs quantum dots". Physical Review B. 72 (16). American Physical Society (APS): 165302. Bibcode:2005PhRvB..72p5302L. doi:10.1103/physrevb.72.165302. ISSN 1098-0121.
  • Antonova, Irina V.; Volodin, Vladimir A.; Neustroev, Efim P.; Smagulova, Svetlana A.; Jedrzejewsi, Jedrzej; Balberg, Isaac (15 September 2009). "Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix". Journal of Applied Physics. 106 (6). AIP Publishing: 064306–064306–6. Bibcode:2009JAP...106f4306A. doi:10.1063/1.3224865. ISSN 0021-8979.
  • Buljan, M.; Grenzer, J.; Holý, V.; Radić, N.; Mišić-Radić, T.; Levichev, S.; Bernstorff, S.; Pivac, B.; Capan, I. (18 October 2010). "Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate". Applied Physics Letters. 97 (16). AIP Publishing: 163117. Bibcode:2010ApPhL..97p3117B. doi:10.1063/1.3504249. ISSN 0003-6951.
  • Nazeeruddin, Mohammad Khaja; Ahn, Tae Kyu; Shin, Jai Kwang; Kim, Yong Su; Yun, Dong-Jin; Kim, Kihong; Park, Jong-Bong; Lee, Jooho; Seol, Minsu (2017-05-17). "Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy". Energy & Environmental Science. 10 (5): 1128–1133. Bibcode:2017EnEnS..10.1128H. doi:10.1039/C7EE00303J. ISSN 1754-5706.
  • Heo, Sung; Seo, Gabseok; Lee, Yonghui; Seol, Minsu; Kim, Seong Heon; Yun, Dong-Jin; Kim, Yongsu; Kim, Kihong; Lee, Junho (2019). "Origins of High Performance and Degradation in the Mixed Perovskite Solar Cells". Advanced Materials. 31 (8): 1805438. Bibcode:2019AdM....3105438H. doi:10.1002/adma.201805438. ISSN 1521-4095. PMID 30614565. S2CID 58578989.
  • Brunwin, R.; Hamilton, B.; Jordan, P.; Peaker, A.R. (1979). "Detection of minority-carrier traps using transient spectroscopy". Electronics Letters. 15 (12). Institution of Engineering and Technology (IET): 349. Bibcode:1979ElL....15..349B. doi:10.1049/el:19790248. ISSN 0013-5194.
  • Hamilton, B.; Peaker, A. R.; Wight, D. R. (1979). "Deep-state-controlled minority-carrier lifetime inn-type gallium phosphide". Journal of Applied Physics. 50 (10). AIP Publishing: 6373–6385. Bibcode:1979JAP....50.6373H. doi:10.1063/1.325728. ISSN 0021-8979.
  • Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.; Emtsev, K. V.; Emtsev, V. V.; Litvinov, V. V.; Murin, L. I.; Dobaczewski, L. (27 December 2004). "Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi". Physical Review B. 70 (23). American Physical Society (APS): 235213. Bibcode:2004PhRvB..70w5213M. doi:10.1103/physrevb.70.235213. ISSN 1098-0121.
  • Dobaczewski, L.; Peaker, A. R.; Bonde Nielsen, K. (2004). "Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors". Journal of Applied Physics. 96 (9). AIP Publishing: 4689–4728. Bibcode:2004JAP....96.4689D. doi:10.1063/1.1794897. ISSN 0021-8979.
  • Dobaczewski, L.; Bernardini, S.; Kruszewski, P.; Hurley, P. K.; Markevich, V. P.; Hawkins, I. D.; Peaker, A. R. (16 June 2008). "Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy" (PDF). Applied Physics Letters. 92 (24). AIP Publishing: 242104. Bibcode:2008ApPhL..92x2104D. doi:10.1063/1.2939001. ISSN 0003-6951.
  • Johnson, N. M.; Bartelink, D. J.; Gold, R. B.; Gibbons, J. F. (1979). "Constant-capacitance DLTS measurement of defect-density profiles in semiconductors". Journal of Applied Physics. 50 (7). AIP Publishing: 4828–4833. Bibcode:1979JAP....50.4828J. doi:10.1063/1.326546. ISSN 0021-8979.
  • Hurtes, Ch.; Boulou, M.; Mitonneau, A.; Bois, D. (15 June 1978). "Deep-level spectroscopy in high-resistivity materials". Applied Physics Letters. 32 (12). AIP Publishing: 821–823. Bibcode:1978ApPhL..32..821H. doi:10.1063/1.89929. ISSN 0003-6951.

laplacedlts.eu

ncl.ac.uk

staff.ncl.ac.uk

nih.gov

pubmed.ncbi.nlm.nih.gov

patents.google.com

  • [1], "Method for measuring traps in semiconductors", issued 1973-12-06 

semanticscholar.org

api.semanticscholar.org

worldcat.org

search.worldcat.org

  • Lang, D. V. (1974). "Deep-level transient spectroscopy: A new method to characterize traps in semiconductors". Journal of Applied Physics. 45 (7). AIP Publishing: 3023–3032. Bibcode:1974JAP....45.3023L. doi:10.1063/1.1663719. ISSN 0021-8979.
  • Elhami Khorasani, Arash; Schroder, Dieter K.; Alford, T. L. (2014). "A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors". IEEE Transactions on Electron Devices. 61 (9). Institute of Electrical and Electronics Engineers (IEEE): 3282–3288. Bibcode:2014ITED...61.3282E. doi:10.1109/ted.2014.2337898. ISSN 0018-9383. S2CID 5895479.
  • Fourches, N. (28 January 1991). "Deep level transient spectroscopy based on conductance transients". Applied Physics Letters. 58 (4). AIP Publishing: 364–366. Bibcode:1991ApPhL..58..364F. doi:10.1063/1.104635. ISSN 0003-6951.
  • Lin, S. W.; Balocco, C.; Missous, M.; Peaker, A. R.; Song, A. M. (3 October 2005). "Coexistence of deep levels with optically active InAs quantum dots". Physical Review B. 72 (16). American Physical Society (APS): 165302. Bibcode:2005PhRvB..72p5302L. doi:10.1103/physrevb.72.165302. ISSN 1098-0121.
  • Antonova, Irina V.; Volodin, Vladimir A.; Neustroev, Efim P.; Smagulova, Svetlana A.; Jedrzejewsi, Jedrzej; Balberg, Isaac (15 September 2009). "Charge spectroscopy of Si nanocrystallites embedded in a SiO2 matrix". Journal of Applied Physics. 106 (6). AIP Publishing: 064306–064306–6. Bibcode:2009JAP...106f4306A. doi:10.1063/1.3224865. ISSN 0021-8979.
  • Buljan, M.; Grenzer, J.; Holý, V.; Radić, N.; Mišić-Radić, T.; Levichev, S.; Bernstorff, S.; Pivac, B.; Capan, I. (18 October 2010). "Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate". Applied Physics Letters. 97 (16). AIP Publishing: 163117. Bibcode:2010ApPhL..97p3117B. doi:10.1063/1.3504249. ISSN 0003-6951.
  • Nazeeruddin, Mohammad Khaja; Ahn, Tae Kyu; Shin, Jai Kwang; Kim, Yong Su; Yun, Dong-Jin; Kim, Kihong; Park, Jong-Bong; Lee, Jooho; Seol, Minsu (2017-05-17). "Deep level trapped defect analysis in CH3NH3PbI3 perovskite solar cells by deep level transient spectroscopy". Energy & Environmental Science. 10 (5): 1128–1133. Bibcode:2017EnEnS..10.1128H. doi:10.1039/C7EE00303J. ISSN 1754-5706.
  • Heo, Sung; Seo, Gabseok; Lee, Yonghui; Seol, Minsu; Kim, Seong Heon; Yun, Dong-Jin; Kim, Yongsu; Kim, Kihong; Lee, Junho (2019). "Origins of High Performance and Degradation in the Mixed Perovskite Solar Cells". Advanced Materials. 31 (8): 1805438. Bibcode:2019AdM....3105438H. doi:10.1002/adma.201805438. ISSN 1521-4095. PMID 30614565. S2CID 58578989.
  • Brunwin, R.; Hamilton, B.; Jordan, P.; Peaker, A.R. (1979). "Detection of minority-carrier traps using transient spectroscopy". Electronics Letters. 15 (12). Institution of Engineering and Technology (IET): 349. Bibcode:1979ElL....15..349B. doi:10.1049/el:19790248. ISSN 0013-5194.
  • Hamilton, B.; Peaker, A. R.; Wight, D. R. (1979). "Deep-state-controlled minority-carrier lifetime inn-type gallium phosphide". Journal of Applied Physics. 50 (10). AIP Publishing: 6373–6385. Bibcode:1979JAP....50.6373H. doi:10.1063/1.325728. ISSN 0021-8979.
  • Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.; Emtsev, K. V.; Emtsev, V. V.; Litvinov, V. V.; Murin, L. I.; Dobaczewski, L. (27 December 2004). "Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi". Physical Review B. 70 (23). American Physical Society (APS): 235213. Bibcode:2004PhRvB..70w5213M. doi:10.1103/physrevb.70.235213. ISSN 1098-0121.
  • Dobaczewski, L.; Peaker, A. R.; Bonde Nielsen, K. (2004). "Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors". Journal of Applied Physics. 96 (9). AIP Publishing: 4689–4728. Bibcode:2004JAP....96.4689D. doi:10.1063/1.1794897. ISSN 0021-8979.
  • Dobaczewski, L.; Bernardini, S.; Kruszewski, P.; Hurley, P. K.; Markevich, V. P.; Hawkins, I. D.; Peaker, A. R. (16 June 2008). "Energy state distributions of the Pb centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy" (PDF). Applied Physics Letters. 92 (24). AIP Publishing: 242104. Bibcode:2008ApPhL..92x2104D. doi:10.1063/1.2939001. ISSN 0003-6951.
  • Johnson, N. M.; Bartelink, D. J.; Gold, R. B.; Gibbons, J. F. (1979). "Constant-capacitance DLTS measurement of defect-density profiles in semiconductors". Journal of Applied Physics. 50 (7). AIP Publishing: 4828–4833. Bibcode:1979JAP....50.4828J. doi:10.1063/1.326546. ISSN 0021-8979.
  • Lau, W. S.; Lam, Y. W. (1982). "Analysis of and some design considerations for the constant capacitance DLTS system". International Journal of Electronics. 52 (4). Informa UK Limited: 369–379. doi:10.1080/00207218208901442. ISSN 0020-7217.
  • Hurtes, Ch.; Boulou, M.; Mitonneau, A.; Bois, D. (15 June 1978). "Deep-level spectroscopy in high-resistivity materials". Applied Physics Letters. 32 (12). AIP Publishing: 821–823. Bibcode:1978ApPhL..32..821H. doi:10.1063/1.89929. ISSN 0003-6951.