Sproul, A. B; Green, M. A (1991). "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K". J. Appl. Phys. 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
Green, M. A. (1990). "Intrinsic concentration, effective densities of states, and effective mass in silicon". Journal of Applied Physics. 67 (6): 2944. Bibcode:1990JAP....67.2944G. doi:10.1063/1.345414.
Parry, Christopher M. (1981). Chan, William S. (ed.). Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications. Mosaic Focal Plane Methodologies I. Vol. 0244. pp. 2–8. doi:10.1117/12.959299. S2CID136572510.
Lin, Xin; Purdum, Geoffrey E.; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Loo, Yueh-Lin; Kahn, Antoine (2016-04-26). "Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor". Chemistry of Materials. 28 (8): 2677–2684. doi:10.1021/acs.chemmater.6b00165. ISSN0897-4756.
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Sproul, A. B; Green, M. A (1991). "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K". J. Appl. Phys. 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
Green, M. A. (1990). "Intrinsic concentration, effective densities of states, and effective mass in silicon". Journal of Applied Physics. 67 (6): 2944. Bibcode:1990JAP....67.2944G. doi:10.1063/1.345414.
Parry, Christopher M. (1981). Chan, William S. (ed.). Bismuth-Doped Silicon: An Extrinsic Detector For Long-Wavelength Infrared (LWIR) Applications. Mosaic Focal Plane Methodologies I. Vol. 0244. pp. 2–8. doi:10.1117/12.959299. S2CID136572510.
Lin, Xin; Purdum, Geoffrey E.; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Loo, Yueh-Lin; Kahn, Antoine (2016-04-26). "Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor". Chemistry of Materials. 28 (8): 2677–2684. doi:10.1021/acs.chemmater.6b00165. ISSN0897-4756.