Doping (semiconductor) (English Wikipedia)

Assadi, M.H.N; Hanaor, D.A.H. (2013). "Theoretical study on copper's energetics and magnetism in TiO₂ polymorphs". Journal of Applied Physics. 113 (23): 233913–233913–5. arXiv:1304.1854. Bibcode:2013JAP...113w3913A. doi:10.1063/1.4811539.

axcelis.com (Global: low place; English: low place)

Rubin, Leonard; Poate, John (June–July 2003). "Ion Implantation in Silicon Technology" (PDF). The Industrial Physicist. 9 (3). American Institute of Physics: 12–15.

azom.com (Global: low place; English: low place)

"Why and How do We Dope Semiconductors?". 9 May 2022.

books.google.com (Global: 3^rd place; English: 3^rd place)

Schmidt, P. E.; Vedde, J. (1998). "High Resistivity NTD Production and Applications". In Claeys, Cor L. (ed.). Proceedings of the Fifth International Symposium on High Purity Silicon. The Electrochemical Society. pp. 3–16. ISBN 978-1-56677-207-5.
Grovenor, C. R. M. (1998). "Table 1.3 Dopant elements in semiconductors with their doping character and ionisation enthalpies (after Zanio 1978 and Sze 1981)". Microelectronic Materials. p. 19. doi:10.1201/9780203747230. ISBN 978-0-203-74723-0.

cdlib.org (Global: 2,268^th place; English: 1,400^th place)

content.cdlib.org

"John Robert Woodyard, Electrical Engineering: Berkeley". University of California: In Memoriam. 1985. Retrieved 2007-08-12.

cityu.edu.hk (Global: low place; English: low place)

"CHAPTER 8: Diffusion" (PDF). www.cityu.edu.hk.^{[self-published source?]}

computerhistory.org (Global: 2,213^th place; English: 1,495^th place)

"Computer History Museum – The Silicon Engine|1955 – Photolithography Techniques Are Used to Make Silicon Devices". Computerhistory.org. Retrieved 2014-06-12.
"1954: Diffusion Process Developed for Transistors". Computer History Museum.

doi.org (Global: 2^nd place; English: 2^nd place)

Sproul, A. B; Green, M. A (1991). "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K". J. Appl. Phys. 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
Green, M. A. (1990). "Intrinsic concentration, effective densities of states, and effective mass in silicon". Journal of Applied Physics. 67 (6): 2944. Bibcode:1990JAP....67.2944G. doi:10.1063/1.345414.
Lin, W.; Benson, K. E. (1989). "Silicon Crystal Growth". Microelectronic Materials and Processes. pp. 1–24. doi:10.1007/978-94-009-0917-5_1. ISBN 978-0-7923-0154-7.
Saga, Tatsuo (July 2010). "Advances in crystalline silicon solar cell technology for industrial mass production". NPG Asia Materials. 2 (3): 96–102. doi:10.1038/asiamat.2010.82.
Lohmüller, E.; Glatz, M.; Lohmüller, S.; Belledin, U.; Mack, S.; Fellmeth, T.; Naber, R.C.G.; Wolf, A. (2020). BBr3 Diffusion: Process Optimization for High-Quality Emitters with Industrial Cycle Times. 37th European Photovoltaic Solar Energy Conference and Exhibition. pp. 364–369. doi:10.4229/EUPVSEC20202020-2CV.1.43.
Li, Mengjie; Ma, Fa-Jun; Peters, Ian Marius; Shetty, Kishan Devappa; Aberle, Armin G.; Hoex, Bram; Samudra, Ganesh S. (May 2017). "Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells". IEEE Journal of Photovoltaics. 7 (3): 755–762. doi:10.1109/JPHOTOV.2017.2679342.
Cheng, Zhaoyang; Liu, Xiaozhen; Xie, Junyu; Zuo, Zhuliang (2024). "Diffusion and Ion Implantation Equipment". Handbook of Integrated Circuit Industry. pp. 1361–1382. doi:10.1007/978-981-99-2836-1_66. ISBN 978-981-99-2835-4.
Park, Chan-Hyuck; Pan, Han; Ishikawa, Yasuhiko; Wada, Kazumi; Ahn, Donghwan (September 2018). "N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass". Thin Solid Films. 662: 1–5. Bibcode:2018TSF...662....1P. doi:10.1016/j.tsf.2018.07.028.
Li, Hongzhao; Kim, Kyung; Hallam, Brett; Hoex, Bram; Wenham, Stuart; Abbott, Malcolm (March 2017). "POCl3 diffusion for industrial Si solar cell emitter formation". Frontiers in Energy. 11 (1): 42–51. doi:10.1007/s11708-016-0433-7.
Cheng, Zhaoyang; Liu, Xiaozhen; Xie, Junyu; Zuo, Zhuliang (2024). "Diffusion and Ion Implantation Equipment". Handbook of Integrated Circuit Industry. pp. 1361–1382. doi:10.1007/978-981-99-2836-1_66. ISBN 978-981-99-2835-4.
Eranna, Golla (2014). "Impurities in Silicon Wafers". Crystal Growth and Evaluation of Silicon for VLSI and ULSI. pp. 265–310. doi:10.1201/b17812-12. ISBN 978-0-429-06839-3.
Braggins, T. T.; Thomas, R. N. (1981). "Extrinsic NTD Silicon for Infrared Applications". Neutron-Transmutation-Doped Silicon. pp. 437–446. doi:10.1007/978-1-4613-3261-9_30. ISBN 978-1-4613-3263-3.
Parry, Christopher M. (1981). "Bismuth-Doped Silicon: An Extrinsic Detector for Long-Wavelength Infrared (LWIR) Applications". In Chan, William S. (ed.). Mosaic Focal Plane Methodologies I. Vol. 0244. pp. 2–8. doi:10.1117/12.959299.
Rauschenbach, Hans S. (1980). "Solar Cells". Solar Cell Array Design Handbook. pp. 155–241. doi:10.1007/978-94-011-7915-7_4. ISBN 978-94-011-7917-1.
Blicher, Adolph (1981). "Selected Fabrication Techniques". Field-Effect and Bipolar Power Transistor Physics. pp. 85–100. doi:10.1016/B978-0-12-105850-0.50011-4. ISBN 978-0-12-105850-0.
Grovenor, C. R. M. (1998). "Table 1.3 Dopant elements in semiconductors with their doping character and ionisation enthalpies (after Zanio 1978 and Sze 1981)". Microelectronic Materials. p. 19. doi:10.1201/9780203747230. ISBN 978-0-203-74723-0.
Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine (December 2017). "Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors". Nature Materials. 16 (12): 1209–1215. Bibcode:2017NatMa..16.1209L. doi:10.1038/nmat5027. OSTI 1595457. PMID 29170548.
Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert (15 March 2016). "Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules". Accounts of Chemical Research. 49 (3): 370–378. doi:10.1021/acs.accounts.5b00438. PMID 26854611.
Lin, Xin; Purdum, Geoffrey E.; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Loo, Yueh-Lin; Kahn, Antoine (26 April 2016). "Impact of a Low Concentration of Dopants on the Distribution of Gap States in a Molecular Semiconductor". Chemistry of Materials. 28 (8): 2677–2684. doi:10.1021/acs.chemmater.6b00165.
Hogan, C. Michael (1969). "Density of States of an Insulating Ferromagnetic Alloy". Physical Review. 188 (2): 870–874. Bibcode:1969PhRv..188..870H. doi:10.1103/PhysRev.188.870.
Zhang, X. Y; Suhl, H (1985). "Spin-wave-related period doublings and chaos under transverse pumping". Physical Review A. 32 (4): 2530–2533. Bibcode:1985PhRvA..32.2530Z. doi:10.1103/PhysRevA.32.2530. PMID 9896377.
Assadi, M.H.N; Hanaor, D.A.H. (2013). "Theoretical study on copper's energetics and magnetism in TiO₂ polymorphs". Journal of Applied Physics. 113 (23): 233913–233913–5. arXiv:1304.1854. Bibcode:2013JAP...113w3913A. doi:10.1063/1.4811539.
Koenraad, Paul M.; Flatté, Michael E. (2011). "Single dopants in semiconductors". Nature Materials. 10 (2): 91–100. Bibcode:2011NatMa..10...91K. doi:10.1038/nmat2940. PMID 21258352.

espacenet.com (Global: 800^th place; English: 676^th place)

worldwide.espacenet.com

US patent 2530110, Woodyard, John R., "Nonlinear circuit device utilizing germanium", issued 1950
US patent 2631356, Sparks, Morgan & Teal, Gordon K., "Method of Making P-N Junctions in Semiconductor Materials", issued March 17, 1953
US patent 4608452, Weinberg, Irving & Brandhorst, Henry W. Jr., "Lithium counterdoped silicon solar cell"

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Sproul, A. B; Green, M. A (1991). "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K". J. Appl. Phys. 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
Green, M. A. (1990). "Intrinsic concentration, effective densities of states, and effective mass in silicon". Journal of Applied Physics. 67 (6): 2944. Bibcode:1990JAP....67.2944G. doi:10.1063/1.345414.
Park, Chan-Hyuck; Pan, Han; Ishikawa, Yasuhiko; Wada, Kazumi; Ahn, Donghwan (September 2018). "N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass". Thin Solid Films. 662: 1–5. Bibcode:2018TSF...662....1P. doi:10.1016/j.tsf.2018.07.028.
Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine (December 2017). "Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors". Nature Materials. 16 (12): 1209–1215. Bibcode:2017NatMa..16.1209L. doi:10.1038/nmat5027. OSTI 1595457. PMID 29170548.
Hogan, C. Michael (1969). "Density of States of an Insulating Ferromagnetic Alloy". Physical Review. 188 (2): 870–874. Bibcode:1969PhRv..188..870H. doi:10.1103/PhysRev.188.870.
Zhang, X. Y; Suhl, H (1985). "Spin-wave-related period doublings and chaos under transverse pumping". Physical Review A. 32 (4): 2530–2533. Bibcode:1985PhRvA..32.2530Z. doi:10.1103/PhysRevA.32.2530. PMID 9896377.
Assadi, M.H.N; Hanaor, D.A.H. (2013). "Theoretical study on copper's energetics and magnetism in TiO₂ polymorphs". Journal of Applied Physics. 113 (23): 233913–233913–5. arXiv:1304.1854. Bibcode:2013JAP...113w3913A. doi:10.1063/1.4811539.
Koenraad, Paul M.; Flatté, Michael E. (2011). "Single dopants in semiconductors". Nature Materials. 10 (2): 91–100. Bibcode:2011NatMa..10...91K. doi:10.1038/nmat2940. PMID 21258352.

mines.edu (Global: low place; English: low place)

inside.mines.edu

"Spin-on Glass". inside.mines.edu. Retrieved 2022-12-22.

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine (December 2017). "Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors". Nature Materials. 16 (12): 1209–1215. Bibcode:2017NatMa..16.1209L. doi:10.1038/nmat5027. OSTI 1595457. PMID 29170548.
Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert (15 March 2016). "Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules". Accounts of Chemical Research. 49 (3): 370–378. doi:10.1021/acs.accounts.5b00438. PMID 26854611.
Zhang, X. Y; Suhl, H (1985). "Spin-wave-related period doublings and chaos under transverse pumping". Physical Review A. 32 (4): 2530–2533. Bibcode:1985PhRvA..32.2530Z. doi:10.1103/PhysRevA.32.2530. PMID 9896377.
Koenraad, Paul M.; Flatté, Michael E. (2011). "Single dopants in semiconductors". Nature Materials. 10 (2): 91–100. Bibcode:2011NatMa..10...91K. doi:10.1038/nmat2940. PMID 21258352.

osti.gov (Global: 2,036^th place; English: 1,254^th place)

Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine (December 2017). "Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors". Nature Materials. 16 (12): 1209–1215. Bibcode:2017NatMa..16.1209L. doi:10.1038/nmat5027. OSTI 1595457. PMID 29170548.

poriyaan.in (Global: low place; English: low place)

eee.poriyaan.in

"Diffusion process of IC fabrication".^{[self-published source?]}

sites.google.com (Global: 626^th place; English: 690^th place)

"Faraday to Shockley – Transistor History". Retrieved 2016-02-02.^{[self-published source?]}

slideplayer.com (Global: low place; English: low place)

"Chapter 7 Dopant Diffusion - PPT video online download".

tuwien.ac.at (Global: low place; English: low place)

iue.tuwien.ac.at

"2. Semiconductor Doping Technology". Iue.tuwien.ac.at. 2002-02-01. Retrieved 2016-02-02.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Wilson, A. H. (1954). The theory of metals. Cambridge University Press. OCLC 1036891562.^{[page needed]}

Doping (semiconductor) (English Wikipedia)

archive.org (Global: 6th place; English: 6th place)

arxiv.org (Global: 69th place; English: 59th place)

axcelis.com (Global: low place; English: low place)

azom.com (Global: low place; English: low place)

books.google.com (Global: 3rd place; English: 3rd place)

cdlib.org (Global: 2,268th place; English: 1,400th place)

content.cdlib.org

cityu.edu.hk (Global: low place; English: low place)

computerhistory.org (Global: 2,213th place; English: 1,495th place)

doi.org (Global: 2nd place; English: 2nd place)

espacenet.com (Global: 800th place; English: 676th place)

worldwide.espacenet.com

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

mines.edu (Global: low place; English: low place)

inside.mines.edu

nih.gov (Global: 4th place; English: 4th place)

pubmed.ncbi.nlm.nih.gov

osti.gov (Global: 2,036th place; English: 1,254th place)

poriyaan.in (Global: low place; English: low place)

eee.poriyaan.in

sites.google.com (Global: 626th place; English: 690th place)

slideplayer.com (Global: low place; English: low place)

tuwien.ac.at (Global: low place; English: low place)

iue.tuwien.ac.at

worldcat.org (Global: 5th place; English: 5th place)

search.worldcat.org

archive.org (Global: 6^th place; English: 6^th place)

arxiv.org (Global: 69^th place; English: 59^th place)

books.google.com (Global: 3^rd place; English: 3^rd place)

cdlib.org (Global: 2,268^th place; English: 1,400^th place)

computerhistory.org (Global: 2,213^th place; English: 1,495^th place)

doi.org (Global: 2^nd place; English: 2^nd place)

espacenet.com (Global: 800^th place; English: 676^th place)

harvard.edu (Global: 18^th place; English: 17^th place)

nih.gov (Global: 4^th place; English: 4^th place)

osti.gov (Global: 2,036^th place; English: 1,254^th place)

sites.google.com (Global: 626^th place; English: 690^th place)

worldcat.org (Global: 5^th place; English: 5^th place)