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Sproul, A. B; Green, M. A (1991). "Improved value for the silicon intrinsic carrier concentration from 275 to 375 K". J. Appl. Phys. 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.
Green, M. A. (1990). "Intrinsic concentration, effective densities of states, and effective mass in silicon". Journal of Applied Physics. 67 (6): 2944. Bibcode:1990JAP....67.2944G. doi:10.1063/1.345414.
Park, Chan-Hyuck; Pan, Han; Ishikawa, Yasuhiko; Wada, Kazumi; Ahn, Donghwan (September 2018). "N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass". Thin Solid Films. 662: 1–5. Bibcode:2018TSF...662....1P. doi:10.1016/j.tsf.2018.07.028.