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Indium gallium arsenide (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Indium gallium arsenide" in English language version.

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22doi.org
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12worldcat.org
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8harvard.edu
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3semanticscholar.org
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3nih.gov
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1iupac.org
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1ecsdl.org
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doi.org

  • Pearsall, T. (1980). "Ga0.47In0.53As: A ternary semiconductor for photodetector applications". IEEE Journal of Quantum Electronics. 16 (7). Institute of Electrical and Electronics Engineers (IEEE): 709–720. doi:10.1109/jqe.1980.1070557. ISSN 0018-9197.
  • Pearsall, T. P.; Hopson, R. W. (1977). "Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy". Journal of Applied Physics. 48 (10). AIP Publishing: 4407–4409. doi:10.1063/1.323399. ISSN 0021-8979.
  • Pearsall, T. P.; Bisaro, R.; Ansel, R.; Merenda, P. (1978-04-15). "The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy". Applied Physics Letters. 32 (8). AIP Publishing: 497–499. doi:10.1063/1.90100. ISSN 0003-6951.
  • Hirtz, J.P.; Larivain, J.P.; Duchemin, J.P.; Pearsall, T.P.; Bonnet, M. (1980). "Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.". Electronics Letters. 16 (11). Institution of Engineering and Technology (IET): 415–416. doi:10.1049/el:19800290. ISSN 0013-5194.
  • Pearsall, T. P.; Eaves, L.; Portal, J. C. (1983). "Photoluminescence and impurity concentration in GaxIn1−xAsyP1−y alloys lattice-matched to InP". Journal of Applied Physics. 54 (2): 1037. Bibcode:1983JAP....54.1037P. doi:10.1063/1.332122.
  • Y. Takeda, A. Sasaki, Y. Imamura, and T. Takagi, "Electron mobility and energy gap of In
    0.53    Ga
    0.47    As     on InP substrate", J. of Appl. Physics 47, 5405-7 (1976); https://doi.org/10.1063/1.322570
  • Nicholas, R. J.; Portal, J. C.; Houlbert, C.; Perrier, P.; Pearsall, T. P. (1979-04-15). "An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP". Applied Physics Letters. 34 (8). AIP Publishing: 492–494. doi:10.1063/1.90860. ISSN 0003-6951.
  • Hermann, Claudine; Pearsall, Thomas P. (1981-03-15). "Optical pumping and the valence‐band light‐hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x)". Applied Physics Letters. 38 (6). AIP Publishing: 450–452. doi:10.1063/1.92393. ISSN 0003-6951.
  • Pearsall, T.P.; Hirtz, J.P. (1981). "The carrier mobilities in Ga0.47In0.53 as grown by organo-mettalic [sic] CVD and liquid-phase epitaxy". Journal of Crystal Growth. 54 (1). Elsevier BV: 127–131. doi:10.1016/0022-0248(81)90258-x. ISSN 0022-0248.
  • Bisaro, R.; Merenda, P.; Pearsall, T. P. (1979). "The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys". Applied Physics Letters. 34 (1). AIP Publishing: 100–102. doi:10.1063/1.90575. ISSN 0003-6951.
  • Lin, S. Y. (1989). "Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs". Applied Physics Letters. 55 (7): 666–668. Bibcode:1989ApPhL..55..666L. doi:10.1063/1.101816.
  • Nishida, Katsuhiko (1979). "InGaAsP heterostructure avalanche photodiodes with high avalanche gain". Applied Physics Letters. 35 (3): 251–253. Bibcode:1979ApPhL..35..251N. doi:10.1063/1.91089.
  • Pearsall, T. (1981). "A Ga0.47In0.53As/InP heterophotodiode with reduced dark current". IEEE Journal of Quantum Electronics. 17 (2): 255–259. Bibcode:1981IJQE...17..255P. doi:10.1109/JQE.1981.1071057. S2CID 20079859.
  • Pearsall, T.P.; Logan, R.A.; Bethea, C.G. (1983). "GaInAs/InP large bandwidth (> 2 GHz) PIN detectors". Electronics Letters. 19 (16). Institution of Engineering and Technology (IET): 611–612. doi:10.1049/el:19830416. ISSN 0013-5194.
  • Shimizu, N. (1998). "InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz". IEEE Photonics Technology Letters. 10 (3): 412–414. Bibcode:1998IPTL...10..412S. doi:10.1109/68.661427. S2CID 9717655.
  • Wey, Y. G.; Crawford, D. L.; Giboney, K.; Bowers, J. E.; Rodwell, M. J.; Silvestre, P.; Hafich, M. J.; Robinson, G. Y. (1991-05-13). "Ultrafast graded double‐heterostructure GaInAs/InP photodiode". Applied Physics Letters. 58 (19). AIP Publishing: 2156–2158. doi:10.1063/1.104991. ISSN 0003-6951.
  • Veteran, J.L. (1982). "Schottky barrier measurements on p-type In0.53Ga0.47As". Thin Solid Films. 97 (2): 187–190. Bibcode:1982TSF....97..187V. doi:10.1016/0040-6090(82)90227-9.
  • Bimberg, D.; Kirstaedter, N.; Ledentsov, N.N.; Alferov, Zh.I.; Kop'ev, P.S.; Ustinov, V.M. (1997). "InGaAs-GaAs quantum-dot lasers". IEEE Journal of Selected Topics in Quantum Electronics. 3 (2). Institute of Electrical and Electronics Engineers (IEEE): 196–205. doi:10.1109/2944.605656. ISSN 1077-260X.
  • Faist, J.; Capasso, F.; Sivco, D. L.; Sirtori, C.; Hutchinson, A. L.; Cho, A. Y. (1994-04-22). "Quantum Cascade Laser". Science. 264 (5158). American Association for the Advancement of Science (AAAS): 553–556. doi:10.1126/science.264.5158.553. ISSN 0036-8075. PMID 17732739. S2CID 109009138.
  • M.Tan, L.Ji, Y.Wu, P.Dai, Q.Wang, K.Li, T.Yu, Y.Yu, S.Lu and H.Yang, "Investigation of InGaAs thermophotovoltaic cells under blackbody radiation", Applied Physics Express 7, p. 096601 (2014), https://doi.org/10.7567/APEX.7.096601
  • Thathachary, Arun V.; Agrawal, Nidhi; Liu, Lu; Datta, Suman (January 1, 2014). "Electron Transport in Multigate InxGa1–x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature". Nano Letters. 14 (2): 626–633. Bibcode:2014NanoL..14..626T. doi:10.1021/nl4038399. PMID 24382089.
  • The environment, health and safety aspects of indium gallium arsenide sources (such as trimethylgallium, trimethylindium and arsine) and industrial hygiene monitoring studies of standard MOVPE have been reviewed. Shenai-Khatkhate, D.V.; et al. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

ecsdl.org

jes.ecsdl.org

europa.eu

echa.europa.eu

harvard.edu

ui.adsabs.harvard.edu

iarc.fr

monographs.iarc.fr

iupac.org

mit.edu

news.mit.edu

nih.gov

pubmed.ncbi.nlm.nih.gov

ntp.niehs.nih.gov

semanticscholar.org

api.semanticscholar.org

sensorsinc.com

three-fives.com

web.archive.org

worldcat.org

  • Pearsall, T. (1980). "Ga0.47In0.53As: A ternary semiconductor for photodetector applications". IEEE Journal of Quantum Electronics. 16 (7). Institute of Electrical and Electronics Engineers (IEEE): 709–720. doi:10.1109/jqe.1980.1070557. ISSN 0018-9197.
  • Pearsall, T. P.; Hopson, R. W. (1977). "Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy". Journal of Applied Physics. 48 (10). AIP Publishing: 4407–4409. doi:10.1063/1.323399. ISSN 0021-8979.
  • Pearsall, T. P.; Bisaro, R.; Ansel, R.; Merenda, P. (1978-04-15). "The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy". Applied Physics Letters. 32 (8). AIP Publishing: 497–499. doi:10.1063/1.90100. ISSN 0003-6951.
  • Hirtz, J.P.; Larivain, J.P.; Duchemin, J.P.; Pearsall, T.P.; Bonnet, M. (1980). "Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.". Electronics Letters. 16 (11). Institution of Engineering and Technology (IET): 415–416. doi:10.1049/el:19800290. ISSN 0013-5194.
  • Nicholas, R. J.; Portal, J. C.; Houlbert, C.; Perrier, P.; Pearsall, T. P. (1979-04-15). "An experimental determination of the effective masses for GaxIn1−xAsyP1−y alloys grown on InP". Applied Physics Letters. 34 (8). AIP Publishing: 492–494. doi:10.1063/1.90860. ISSN 0003-6951.
  • Hermann, Claudine; Pearsall, Thomas P. (1981-03-15). "Optical pumping and the valence‐band light‐hole effective mass in GaxIn1−xAsyP1−y (y≃2.2x)". Applied Physics Letters. 38 (6). AIP Publishing: 450–452. doi:10.1063/1.92393. ISSN 0003-6951.
  • Pearsall, T.P.; Hirtz, J.P. (1981). "The carrier mobilities in Ga0.47In0.53 as grown by organo-mettalic [sic] CVD and liquid-phase epitaxy". Journal of Crystal Growth. 54 (1). Elsevier BV: 127–131. doi:10.1016/0022-0248(81)90258-x. ISSN 0022-0248.
  • Bisaro, R.; Merenda, P.; Pearsall, T. P. (1979). "The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys". Applied Physics Letters. 34 (1). AIP Publishing: 100–102. doi:10.1063/1.90575. ISSN 0003-6951.
  • Pearsall, T.P.; Logan, R.A.; Bethea, C.G. (1983). "GaInAs/InP large bandwidth (> 2 GHz) PIN detectors". Electronics Letters. 19 (16). Institution of Engineering and Technology (IET): 611–612. doi:10.1049/el:19830416. ISSN 0013-5194.
  • Wey, Y. G.; Crawford, D. L.; Giboney, K.; Bowers, J. E.; Rodwell, M. J.; Silvestre, P.; Hafich, M. J.; Robinson, G. Y. (1991-05-13). "Ultrafast graded double‐heterostructure GaInAs/InP photodiode". Applied Physics Letters. 58 (19). AIP Publishing: 2156–2158. doi:10.1063/1.104991. ISSN 0003-6951.
  • Bimberg, D.; Kirstaedter, N.; Ledentsov, N.N.; Alferov, Zh.I.; Kop'ev, P.S.; Ustinov, V.M. (1997). "InGaAs-GaAs quantum-dot lasers". IEEE Journal of Selected Topics in Quantum Electronics. 3 (2). Institute of Electrical and Electronics Engineers (IEEE): 196–205. doi:10.1109/2944.605656. ISSN 1077-260X.
  • Faist, J.; Capasso, F.; Sivco, D. L.; Sirtori, C.; Hutchinson, A. L.; Cho, A. Y. (1994-04-22). "Quantum Cascade Laser". Science. 264 (5158). American Association for the Advancement of Science (AAAS): 553–556. doi:10.1126/science.264.5158.553. ISSN 0036-8075. PMID 17732739. S2CID 109009138.

zenodo.org