Junctionless nanowire transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Junctionless nanowire transistor" in English language version.

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Kranti, A.; Yan, R.; Lee, C. -W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P.; Colinge, J. P. (2010). "Junctionless nanowire transistor (JNT): Properties and design guidelines". 2010 Proceedings of the European Solid State Device Research Conference. p. 357. doi:10.1109/ESSDERC.2010.5618216. ISBN 978-1-4244-6658-0.
Larrieu, Guilhem; Han, X.-L. (2013). "Vertical nanowire array-based field effect transistors for ultimate scaling". Nanoscale. 5 (6): 2437–2441. Bibcode:2013Nanos...5.2437L. doi:10.1039/c3nr33738c. eISSN 2040-3372. ISSN 2040-3364. PMID 23403487.
Colinge, J. P.; Kranti, A.; Yan, R.; Lee, C. W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P. (2011). "Junctionless Nanowire Transistor (JNT): Properties and design guidelines". Solid-State Electronics. 65–66: 33–37. Bibcode:2011SSEle..65...33C. doi:10.1016/j.sse.2011.06.004. S2CID 8382657.
Yu, Ran (2013). "Junctionless nanowire transistor fabricated with high mobility Ge channel". Physica Status Solidi RRL. 8: 65–68. doi:10.1002/pssr.201300119. S2CID 93197577.

Larrieu, Guilhem; Han, X.-L. (2013). "Vertical nanowire array-based field effect transistors for ultimate scaling". Nanoscale. 5 (6): 2437–2441. Bibcode:2013Nanos...5.2437L. doi:10.1039/c3nr33738c. eISSN 2040-3372. ISSN 2040-3364. PMID 23403487.
Colinge, J. P.; Kranti, A.; Yan, R.; Lee, C. W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P. (2011). "Junctionless Nanowire Transistor (JNT): Properties and design guidelines". Solid-State Electronics. 65–66: 33–37. Bibcode:2011SSEle..65...33C. doi:10.1016/j.sse.2011.06.004. S2CID 8382657.

Larrieu, Guilhem; Han, X.-L. (2013). "Vertical nanowire array-based field effect transistors for ultimate scaling". Nanoscale. 5 (6): 2437–2441. Bibcode:2013Nanos...5.2437L. doi:10.1039/c3nr33738c. eISSN 2040-3372. ISSN 2040-3364. PMID 23403487.

Colinge, J. P.; Kranti, A.; Yan, R.; Lee, C. W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P. (2011). "Junctionless Nanowire Transistor (JNT): Properties and design guidelines". Solid-State Electronics. 65–66: 33–37. Bibcode:2011SSEle..65...33C. doi:10.1016/j.sse.2011.06.004. S2CID 8382657.
Yu, Ran (2013). "Junctionless nanowire transistor fabricated with high mobility Ge channel". Physica Status Solidi RRL. 8: 65–68. doi:10.1002/pssr.201300119. S2CID 93197577.

Larrieu, Guilhem; Han, X.-L. (2013). "Vertical nanowire array-based field effect transistors for ultimate scaling". Nanoscale. 5 (6): 2437–2441. Bibcode:2013Nanos...5.2437L. doi:10.1039/c3nr33738c. eISSN 2040-3372. ISSN 2040-3364. PMID 23403487.