Memory cell (computing) (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Memory cell (computing)" in English language version.

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8books.google.com

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7web.archive.org

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5computerhistory.org

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2oldcalculatormuseum.com

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1sciencedirect.com

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archive.org

Fletcher, William (1980). An engineering approach to digital design. Prentice-Hall. p. 283. ISBN 0-13-277699-5.
Microelectronic circuits (Second ed.). Holt, Rinehart and Winston, Inc. 1987. p. 883. ISBN 0-03-007328-6.
Reilly, Edwin D. (2003). Milestones in computer science and information technology. Greenwood publishing group. p. 164. ISBN 9781573565219.
W. Pugh, Emerson; R. Johnson, Lyle; H. Palmer, John (1991). IBM's 360 and early 370 systems. MIT Press. p. 706. ISBN 0262161230. Retrieved 9 December 2015.

books.google.com

D. Tang, Denny; Lee, Yuan-Jen (2010). Magnetic memory: Fundamentals and technology. Cambridge University Press. p. 91. ISBN 978-1139484497. Retrieved 13 December 2015.
O’Regan, Gerard (2013). Giants of computing: A compendium of select, pivotal pioneers. Springer. p. 267. ISBN 978-1447153405. Retrieved 13 December 2015.
Taylor, Alan (18 June 1979). Computerworld: Mass. Town has become computer capital. IDG Enterprise. p. 25.
Solid state design - vol. 6. Horizon house. 1965.
Kent, Allen; Williams, James G. (6 January 1992). Encyclopedia of microcomputers: volume 9 - Icon programming language to knowledge-based systems: APL techniques. CRC press. p. 131. ISBN 9780824727086.
Jacob, Bruce; Ng, Spencer; Wang, David (28 July 2010). Memory systems: Cache, DRAM, disk. Morgan Kaufmann. p. 355. ISBN 9780080553849.
Siddiqi, Muzaffer A. (19 December 2012). Dynamic RAM: Technology advancements. CRC Press. p. 10. ISBN 9781439893739.
Li, Hai; Chen, Yiran (19 April 2016). Nonvolatile memory design: Magnetic, resistive, and phase change. CRC press. pp. 6, 7. ISBN 9781439807460.

britannica.com

"Robert Dennard". Encyclopædia Britannica. Retrieved 8 July 2019.

computerhistory.org

"1953: Whirlwind computer debuts core memory". Computer History Museum. Retrieved 2 August 2019.
"1966: Semiconductor RAMs serve high-speed storage needs". Computer History Museum. Retrieved 19 June 2019.
"1970: Semiconductors compete with magnetic cores". Computer history museum. Retrieved 19 June 2019.
"1963: Complementary MOS circuit configuration is invented". Computer history museum. Retrieved 6 July 2019.
"1971: Reusable semiconductor ROM introduced". Computer history museum. Retrieved 19 June 2019.

doi.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Kahng, D.; Sze, S.M. (1967). "A floating-gate and its application to memory devices". The Bell System Technical Journal. 46 (6): 1288–95. doi:10.1002/j.1538-7305.1967.tb01738.x.
Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, R. (1987). "New ultra high density EPROM and flash EEPROM with NAND structure cell". Electron Devices Meeting, 1987 International. IEDM 1987. IEEE. doi:10.1109/IEDM.1987.191485.

eetimes.com

Clarke, Peter (2013). "Samsung confirms 24 layers in 3D NAND". EE Times.

engadget.com

"Toshiba announces new "3D" NAND flash technology". Engadget. 12 June 2007. Retrieved 10 July 2019.

espacenet.com

worldwide.espacenet.com

US 4531203 Fujio Masuoka

forbes.com

Fulford, Benjamin (24 June 2002). "Unsung hero". Forbes. Archived from the original on 3 March 2008. Retrieved 18 March 2008.

ibm.com

"DRAM". IBM100. IBM. 9 August 2017. Retrieved 20 September 2019.

iop.org

iopscience.iop.org

Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.

maltiel-consulting.com

"Memory". Semiconductor technology online (STOL). Retrieved 25 June 2019.

oldcalculatormuseum.com

"Spec sheet for Toshiba "TOSCAL" BC-1411". Old calculator web museum. Archived from the original on 3 July 2017. Retrieved 8 May 2018.
"Toshiba "Toscal" BC-1411 desktop calculator". Archived from the original on 20 May 2007.

pcworld.fr

"The technical question: the cache, how does it work?". PC World Fr (in French). Archived from the original on 30 March 2014.

samsung.com

"Samsung introduces world's first 3D V-NAND based SSD for enterprise applications". Samsung semiconductor global website. Archived from the original on 15 April 2021.

sciencedirect.com

"Transistors - an overview". ScienceDirect. Retrieved 8 August 2019.

shmj.or.jp

"Late 1960s: Beginnings of MOS memory" (PDF). Semiconductor history museum of Japan. 23 January 2019. Retrieved 27 June 2019.
"1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor history museum of Japan. Archived (PDF) from the original on 5 July 2019. Retrieved 5 July 2019.
"1980s: DRAM capacity increases, the shift to CMOS advances, and Japan dominates the market" (PDF). Semiconductor history museum of Japan. Retrieved 19 July 2019.

toshiba.com

flash25.toshiba.com

"Toshiba: Inventor of flash memory". Toshiba. Archived from the original on 20 June 2019. Retrieved 20 June 2019.

web.archive.org

"The technical question: the cache, how does it work?". PC World Fr (in French). Archived from the original on 30 March 2014.
"Spec sheet for Toshiba "TOSCAL" BC-1411". Old calculator web museum. Archived from the original on 3 July 2017. Retrieved 8 May 2018.
"Toshiba "Toscal" BC-1411 desktop calculator". Archived from the original on 20 May 2007.
"1978: Double-well fast CMOS SRAM (Hitachi)" (PDF). Semiconductor history museum of Japan. Archived (PDF) from the original on 5 July 2019. Retrieved 5 July 2019.
Fulford, Benjamin (24 June 2002). "Unsung hero". Forbes. Archived from the original on 3 March 2008. Retrieved 18 March 2008.
"Toshiba: Inventor of flash memory". Toshiba. Archived from the original on 20 June 2019. Retrieved 20 June 2019.
"Samsung introduces world's first 3D V-NAND based SSD for enterprise applications". Samsung semiconductor global website. Archived from the original on 15 April 2021.