Phase-change memory (English Wikipedia)

Meuffels, P.; Soni, R. (2012). "Fundamental Issues and Problems in the Realization of Memristors". arXiv:1207.7319 [cond-mat.mes-hall].
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.

computerworld.com

"IT news, careers, business technology, reviews". Computerworld.

dailytech.com

"Intel to Sample Phase Change Memory This Year". Archived from the original on 2007-03-23. Retrieved 2007-06-30.

doi.org

Le Gallo, Manuel; Sebastian, Abu (2020-03-30). "An overview of phase-change memory device physics". Journal of Physics D: Applied Physics. 53 (21): 213002. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). "Recent Progress in Phase-Change Memory Technology". IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6 (2): 146–162. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; et al. (July 2011). "Interfacial phase-change memory". Nature Nanotechnology. 6 (8): 501–5. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Chua, L. O. (2011), "Resistance switching memories are memristors", Applied Physics A, 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Pohm, A.; Sie, C.; Uttecht, R.; Kao, V.; Agrawal, O. (1970). "Chalcogenide glass bistable resistivity (Ovonic) memories". IEEE Transactions on Magnetics. 6 (3): 592. Bibcode:1970ITM.....6..592P. doi:10.1109/TMAG.1970.1066920.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
Horii, H.; et al. (2003). "A novel cell technology using N-doped GeSbTe films for phase change RAM". 2003 Symposium on VLSI Technology. Digest of Technical Papers. pp. 177–8. doi:10.1109/VLSIT.2003.1221143. ISBN 4-89114-033-X. S2CID 40051862. 03CH37407.
Zhou, X.; Wu, L.; Song, Z.; Rao, F.; Ren, K.; Peng, C.; Song, S.; Liu, B.; Xu, L.; Feng, S. (2013). "Phase transition characteristics of Al-Sb phase change materials for phase change memory application". Applied Physics Letters. 103 (7): 072114. Bibcode:2013ApPhL.103g2114Z. doi:10.1063/1.4818662.
Simpson, R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅". Nano Letters. 10 (2): 414–9. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Pirovano, A.; Redaelli, A.; Pellizzer, F.; Ottogalli, F.; Tosi, M.; Ielmini, D.; Lacaita, A.L.; Bez, R. (2004). "Reliability study of phase-change nonvolatile memories". IEEE Transactions on Device and Materials Reliability. 4 (3): 422–7. doi:10.1109/TDMR.2004.836724. S2CID 22178768.
Karpov, I.V.; Kencke, D.; Kau, D.; Tang, S.; Spadini, G. (2010). "Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties". Symposium G – Materials and Physics for Nonvolatile Memories II. MRS Proceedings. Vol. 1250. Cambridge University Press. pp. G14-01–H07-01. doi:10.1557/PROC-1250-G14-01-H07-01.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). "Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element". IEEE Transactions on Electron Devices. 62 (11): 3498–3507. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). "HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs". IEEE Journal of Solid-State Circuits. 57 (4): 1027–1038. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.
Karpov, I.V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y.A.; Karpov, V.G. (2007). "Fundamental drift of parameters in chalcogenide phase change memory". J. Appl. Phys. 102 (12): 124503–124503–6. Bibcode:2007JAP...102l4503K. doi:10.1063/1.2825650.
Kolomiets, B. T. (1964). "Vitreous Semiconductors (I)". Physica Status Solidi B. 7 (2): 359–372. Bibcode:1964PSSBR...7..359K. doi:10.1002/pssb.19640070202. S2CID 222432031.
Kolomiets, B. T. (1964). "Vitreous Semiconductors (II)". Physica Status Solidi B. 7 (3): 713–731. Bibcode:1964PSSBR...7..713K. doi:10.1002/pssb.19640070302.
Chung, H.; et al. (2011). "A 58nm 1.8V 1 Gb PRAM with 6.4 MB/s program BW". 2011 IEEE International Solid-State Circuits Conference. pp. 500–2. doi:10.1109/ISSCC.2011.5746415. ISBN 978-1-61284-303-2. S2CID 206996875.

eetimes.com

"Samsung to ship MCP with phase-change". EE Times. 2010-04-28. Retrieved 2010-05-03.

eetimessupplynetwork.com

"Samsung moves phase-change memory to production".^{[permanent dead link]}

engadget.com

"IBM develops 'instantaneous' memory, 100x faster than flash". engadget. 2011-06-30. Retrieved 2011-06-30.
Engadget Samsung PRAM chips go into mass production

eweek.com

"Intel Previews Potential Replacement for Flash". Archived from the original on June 29, 2012.

extremetech.com

Hruska, Joel (8 May 2014). "IBM demonstrates next-gen phase-change memory that's up to 275 times faster than your SSD". ExtremeTech.
Hruska, Joel (6 August 2014). "Western Digital's HGST division creates new phase-change SSD that's orders of magnitude faster than any NAND flash drive on the market". ExtremeTech.

ghostarchive.org

"A Cinematic Study of Mechanisms of Phase Change Memory". YouTube. 2012-06-21. Archived from the original on 2021-12-21. Retrieved 2013-09-17.

harvard.edu

ui.adsabs.harvard.edu

Le Gallo, Manuel; Sebastian, Abu (2020-03-30). "An overview of phase-change memory device physics". Journal of Physics D: Applied Physics. 53 (21): 213002. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). "Recent Progress in Phase-Change Memory Technology". IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6 (2): 146–162. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; et al. (July 2011). "Interfacial phase-change memory". Nature Nanotechnology. 6 (8): 501–5. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Chua, L. O. (2011), "Resistance switching memories are memristors", Applied Physics A, 102 (4): 765–783, Bibcode:2011ApPhA.102..765C, doi:10.1007/s00339-011-6264-9
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Pohm, A.; Sie, C.; Uttecht, R.; Kao, V.; Agrawal, O. (1970). "Chalcogenide glass bistable resistivity (Ovonic) memories". IEEE Transactions on Magnetics. 6 (3): 592. Bibcode:1970ITM.....6..592P. doi:10.1109/TMAG.1970.1066920.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
Zhou, X.; Wu, L.; Song, Z.; Rao, F.; Ren, K.; Peng, C.; Song, S.; Liu, B.; Xu, L.; Feng, S. (2013). "Phase transition characteristics of Al-Sb phase change materials for phase change memory application". Applied Physics Letters. 103 (7): 072114. Bibcode:2013ApPhL.103g2114Z. doi:10.1063/1.4818662.
Simpson, R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅". Nano Letters. 10 (2): 414–9. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). "Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element". IEEE Transactions on Electron Devices. 62 (11): 3498–3507. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). "HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs". IEEE Journal of Solid-State Circuits. 57 (4): 1027–1038. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.
Karpov, I.V.; Mitra, M.; Kau, D.; Spadini, G.; Kryukov, Y.A.; Karpov, V.G. (2007). "Fundamental drift of parameters in chalcogenide phase change memory". J. Appl. Phys. 102 (12): 124503–124503–6. Bibcode:2007JAP...102l4503K. doi:10.1063/1.2825650.
Kolomiets, B. T. (1964). "Vitreous Semiconductors (I)". Physica Status Solidi B. 7 (2): 359–372. Bibcode:1964PSSBR...7..359K. doi:10.1002/pssb.19640070202. S2CID 222432031.
Kolomiets, B. T. (1964). "Vitreous Semiconductors (II)". Physica Status Solidi B. 7 (3): 713–731. Bibcode:1964PSSBR...7..713K. doi:10.1002/pssb.19640070302.

iastate.edu

lib.dr.iastate.edu

Sie, C.H. (1969). Memory cell using bistable resistivity in amorphous As-Te-Ge film. Retrospective Theses and Dissertations (PhD). Iowa State University. 3604 https://lib.dr.iastate.edu/rtd/3604.

ieee.org

ieeexplore.ieee.org

Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). "Recent Progress in Phase-Change Memory Technology". IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6 (2): 146–162. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). "Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element". IEEE Transactions on Electron Devices. 62 (11): 3498–3507. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.

intel.com

"Intel and Numonyx Achieve Research Milestone with Stacked, Cross Point Phase Change Memory Technology". www.intel.com.

kurzweilai.net

"Will phase-change memory replace flash memory?". KurzweilAI. Retrieved 2013-09-17.

micron.com

investors.micron.com

miracd.com

A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth Archived 2012-01-31 at the Wayback Machine

nature.com

Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.

nih.gov

pubmed.ncbi.nlm.nih.gov

Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; et al. (July 2011). "Interfacial phase-change memory". Nature Nanotechnology. 6 (8): 501–5. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Simpson, R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅". Nano Letters. 10 (2): 414–9. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.

numonyx.com

"Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes". Numonyx. 2008-02-06. Archived from the original on 2008-06-09. Retrieved 2008-08-15.
"Numonyx Memory Solutions - Numonyx Introduces New Phase Change Memory Devices". April 25, 2010. Archived from the original on 25 April 2010.

objective-analysis.com

Moore, Gordon E.; Neale, R.G.; Nelson, D.L. (September 28, 1970). "Nonvolatile and reprogramable, the read-mostly memory is here" (PDF). Electronics: 56–60. Archived from the original (PDF) on July 7, 2022. Retrieved April 22, 2022.

psu.edu

citeseerx.ist.psu.edu

Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.

samsung.com

SAMSUNG Introduces the Next Generation of Nonvolatile Memory—PRAM
"Samsung Electronics and Numonyx Join Forces on Phase Change Memory". Samsung. 2009-06-23.
"Page Not Found - SAMSUNG". Samsung Electronics America. Archived from the original on August 21, 2010. {{cite web}}: Cite uses generic title (help)

semanticscholar.org

api.semanticscholar.org

Le Gallo, Manuel; Sebastian, Abu (2020-03-30). "An overview of phase-change memory device physics". Journal of Physics D: Applied Physics. 53 (21): 213002. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). "Recent Progress in Phase-Change Memory Technology". IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6 (2): 146–162. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; et al. (July 2011). "Interfacial phase-change memory". Nature Nanotechnology. 6 (8): 501–5. Bibcode:2011NatNa...6..501S. doi:10.1038/nnano.2011.96. PMID 21725305. S2CID 6684244.
Di Ventra, Massimiliano; Pershin, Yuriy V. (2013). "On the physical properties of memristive, memcapacitive and meminductive systems". Nanotechnology. 24 (25): 255201. arXiv:1302.7063. Bibcode:2013Nanot..24y5201D. CiteSeerX 10.1.1.745.8657. doi:10.1088/0957-4484/24/25/255201. PMID 23708238. S2CID 14892809.
Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
Horii, H.; et al. (2003). "A novel cell technology using N-doped GeSbTe films for phase change RAM". 2003 Symposium on VLSI Technology. Digest of Technical Papers. pp. 177–8. doi:10.1109/VLSIT.2003.1221143. ISBN 4-89114-033-X. S2CID 40051862. 03CH37407.
Simpson, R. E. (2010). "Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅". Nano Letters. 10 (2): 414–9. Bibcode:2010NanoL..10..414S. doi:10.1021/nl902777z. PMID 20041706. S2CID 9585187.
Pirovano, A.; Redaelli, A.; Pellizzer, F.; Ottogalli, F.; Tosi, M.; Ielmini, D.; Lacaita, A.L.; Bez, R. (2004). "Reliability study of phase-change nonvolatile memories". IEEE Transactions on Device and Materials Reliability. 4 (3): 422–7. doi:10.1109/TDMR.2004.836724. S2CID 22178768.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). "Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element". IEEE Transactions on Electron Devices. 62 (11): 3498–3507. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). "HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs". IEEE Journal of Solid-State Circuits. 57 (4): 1027–1038. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.
Kolomiets, B. T. (1964). "Vitreous Semiconductors (I)". Physica Status Solidi B. 7 (2): 359–372. Bibcode:1964PSSBR...7..359K. doi:10.1002/pssb.19640070202. S2CID 222432031.
Chung, H.; et al. (2011). "A 58nm 1.8V 1 Gb PRAM with 6.4 MB/s program BW". 2011 IEEE International Solid-State Circuits Conference. pp. 500–2. doi:10.1109/ISSCC.2011.5746415. ISBN 978-1-61284-303-2. S2CID 206996875.

skhynix.com

news.skhynix.com

"SK hynix and IBM Sign Joint Development for PCRAM". SK hynix Newsroom. Retrieved 2022-02-05.

st.com

"Phase-Change Memory (PCM) - Technology, Advantages & Applications - STMicroelectronics". www.st.com. Retrieved 2022-07-08.

technologyreview.com

Greene, Kate (4 February 2008). "A Memory Breakthrough". Technology Review.

techtree.com

"Phase Change to Replace Flash?". Archived from the original on September 27, 2007.

techworld.com

features.techworld.com

"Is NAND flash memory a dying technology?". Techworld. Retrieved 2010-02-04.

theregister.co.uk

Mellor, Chris (10 October 2011), "HP and Hynix to produce the memristor goods by 2013", The Register, retrieved 2012-03-07
Mellor, Chris (14 January 2014). "Micron: Hot DRAM. We don't need no steenkin' PCM". www.theregister.co.uk. The Register. Retrieved 14 January 2014.

web.archive.org

Moore, Gordon E.; Neale, R.G.; Nelson, D.L. (September 28, 1970). "Nonvolatile and reprogramable, the read-mostly memory is here" (PDF). Electronics: 56–60. Archived from the original (PDF) on July 7, 2022. Retrieved April 22, 2022.
"Intel to Sample Phase Change Memory This Year". Archived from the original on 2007-03-23. Retrieved 2007-06-30.
"Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes". Numonyx. 2008-02-06. Archived from the original on 2008-06-09. Retrieved 2008-08-15.
"Phase Change to Replace Flash?". Archived from the original on September 27, 2007.
"Numonyx Memory Solutions - Numonyx Introduces New Phase Change Memory Devices". April 25, 2010. Archived from the original on 25 April 2010.
"Page Not Found - SAMSUNG". Samsung Electronics America. Archived from the original on August 21, 2010. {{cite web}}: Cite uses generic title (help)
A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth Archived 2012-01-31 at the Wayback Machine

worldcat.org

search.worldcat.org

Le Gallo, Manuel; Sebastian, Abu (2020-03-30). "An overview of phase-change memory device physics". Journal of Physics D: Applied Physics. 53 (21): 213002. Bibcode:2020JPhD...53u3002L. doi:10.1088/1361-6463/ab7794. ISSN 0022-3727. S2CID 213023359.
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi; Kim, Sangbum; Sosa, Norma E.; Papandreou, Nikolaos; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos (June 2016). "Recent Progress in Phase-Change Memory Technology". IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6 (2): 146–162. Bibcode:2016IJEST...6..146B. doi:10.1109/JETCAS.2016.2547718. ISSN 2156-3357. S2CID 26729693.
Burr, Geoffrey W.; Shelby, Robert M.; Sidler, Severin; di Nolfo, Carmelo; Jang, Junwoo; Boybat, Irem; Shenoy, Rohit S.; Narayanan, Pritish; Virwani, Kumar; Giacometti, Emanuele U.; Kurdi, Bulent N. (November 2015). "Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element". IEEE Transactions on Electron Devices. 62 (11): 3498–3507. Bibcode:2015ITED...62.3498B. doi:10.1109/TED.2015.2439635. ISSN 0018-9383. S2CID 5243635.
Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan; Eleftheriou, Evangelos (July 2020). "Memory devices and applications for in-memory computing". Nature Nanotechnology. 15 (7): 529–544. Bibcode:2020NatNa..15..529S. doi:10.1038/s41565-020-0655-z. ISSN 1748-3395. PMID 32231270. S2CID 214704544.
Khaddam-Aljameh, Riduan; Stanisavljevic, Milos; Mas, Jordi Fornt; Karunaratne, Geethan; Brändli, Matthias; Liu, Feng; Singh, Abhairaj; Müller, Silvia M.; Egger, Urs; Petropoulos, Anastasios; Antonakopoulos, Theodore (2022). "HERMES-Core–A 1.59-TOPS/mm² PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs". IEEE Journal of Solid-State Circuits. 57 (4): 1027–1038. Bibcode:2022IJSSC..57.1027K. doi:10.1109/JSSC.2022.3140414. ISSN 1558-173X. S2CID 246417395.

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"A Cinematic Study of Mechanisms of Phase Change Memory". YouTube. 2012-06-21. Archived from the original on 2021-12-21. Retrieved 2013-09-17.