Akashi, Teruhisa (2005), "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance", IEEJ Transactions on Sensors and Micromachines, 125 (4): 182–187, Bibcode:2005IJTSM.125..182A, doi:10.1541/ieejsmas.125.182
Zaman, Anna; Meletis, Efstathios I. (23 November 2017), "Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering", Coatings, 7 (12): 209, doi:10.3390/coatings7120209
Lima, Lucas; Moreiraa, Milena D.; Cioldin, Fred; Diniza, José Alexandre; Doi, Ioshiaki (2010), "Tantalum Nitride as Promising Gate Electrode for MOS Technology", ECS Trans., 31 (1): 319–325, Bibcode:2010ECSTr..31a.319L, doi:10.1149/1.3474175, S2CID97901262
Tsai, M. H.; Sun, S. C. (1995), "Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization", Appl. Phys. Lett., 67 (8): 1128, Bibcode:1995ApPhL..67.1128T, doi:10.1063/1.114983
Baba, K.; Hatada, R.; Udoh, K.; Yasuda, K. (2 May 1997), "Structure and properties of NbN and TaN films prepared by ion beam assisted deposition", Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127–128: 841–845, Bibcode:1997NIMPB.127..841B, doi:10.1016/S0168-583X(97)00018-9
Ensinger, W.; Kiuchi, M.; Satou, M. (1995), "Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation", Journal of Applied Physics, 77 (12): 6630, Bibcode:1995JAP....77.6630E, doi:10.1063/1.359073
Kim, Deok-kee; Lee, Heon; Kim, Donghwan; Kim, Young Keun (October 2005), "Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering", Journal of Crystal Growth, 283 (3–4): 404–408, Bibcode:2005JCrGr.283..404K, doi:10.1016/j.jcrysgro.2005.06.017
Akashi, Teruhisa (2005), "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance", IEEJ Transactions on Sensors and Micromachines, 125 (4): 182–187, Bibcode:2005IJTSM.125..182A, doi:10.1541/ieejsmas.125.182
Lima, Lucas; Moreiraa, Milena D.; Cioldin, Fred; Diniza, José Alexandre; Doi, Ioshiaki (2010), "Tantalum Nitride as Promising Gate Electrode for MOS Technology", ECS Trans., 31 (1): 319–325, Bibcode:2010ECSTr..31a.319L, doi:10.1149/1.3474175, S2CID97901262
Tsai, M. H.; Sun, S. C. (1995), "Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization", Appl. Phys. Lett., 67 (8): 1128, Bibcode:1995ApPhL..67.1128T, doi:10.1063/1.114983
Baba, K.; Hatada, R.; Udoh, K.; Yasuda, K. (2 May 1997), "Structure and properties of NbN and TaN films prepared by ion beam assisted deposition", Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 127–128: 841–845, Bibcode:1997NIMPB.127..841B, doi:10.1016/S0168-583X(97)00018-9
Ensinger, W.; Kiuchi, M.; Satou, M. (1995), "Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation", Journal of Applied Physics, 77 (12): 6630, Bibcode:1995JAP....77.6630E, doi:10.1063/1.359073
Kim, Deok-kee; Lee, Heon; Kim, Donghwan; Kim, Young Keun (October 2005), "Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering", Journal of Crystal Growth, 283 (3–4): 404–408, Bibcode:2005JCrGr.283..404K, doi:10.1016/j.jcrysgro.2005.06.017