Agarwal, M. K.; Wani, P. A. (1979). "Growth conditions and crystal structure parameters of layer compounds in the series Mo1−xWxSe2". Materials Research Bulletin. 14 (6): 825–830. doi:10.1016/0025-5408(79)90144-2.
Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.
O'Hare, P.A.G.; Lewis, Brett M.; parkinson, B.A. (June 1988). "Standard molar enthalpy of formation by fluorine-combustion calorimetry of tungsten diselenide (WSe2). Thermodynamics of the high-temperature vaporization of WSe2. Revised value of the standard molar enthalpy of formation of molybdenite (MoS2)". The Journal of Chemical Thermodynamics. 20 (6): 681–691. doi:10.1016/0021-9614(88)90019-5.
Upadhyayula, L.C.; Loferski, J.J.; Wold, A.; Giriat, W.; Kershaw, R. (1968). "Semiconducting Properties of Single Crystals of n- and p-Type Tungsten Diselenide (WSe2)". Journal of Applied Physics. 39 (10): 353–358. Bibcode:1968JAP....39.4736U. doi:10.1063/1.1655829.
Gobrecht, J.; Gerischer, H.; Tributsch, H. (1978). "Electrochemical Solar Cell Based on the d-Band Semiconductor Tungsten-Diselenide". Berichte der Bunsengesellschaft für physikalische Chemie. 82 (12): 1331–1335. doi:10.1002/bbpc.19780821212.
Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.