トンネル電界効果トランジスタ (Japanese Wikipedia)

Analysis of information sources in references of the Wikipedia article "トンネル電界効果トランジスタ" in Japanese language version.

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Appenzeller, J. (2004-01-01). “Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors”. Physical Review Letters 93 (19). doi:10.1103/PhysRevLett.93.196805.
Sarkar, Deblina; Xie, Xuejun; Liu, Wei; Cao, Wei; Kang, Jiahao; Gong, Yongji; Kraemer, Stephan; Ajayan, Pulickel M. et al. (2015-09-30). “A subthermionic tunnel field-effect transistor with an atomically thin channel” (英語). Nature 526 (7571): 91–95. doi:10.1038/nature15387. ISSN 0028-0836.
Tomioka, Katsuhiro (2015-09-30). “Condensed-matter Physics: Flat transistor defies the limit” (英語). Nature 526 (7571): 51–52. doi:10.1038/526051a. ISSN 0028-0836.
Seabaugh, A. C.; Zhang, Q. (2010). “Low-Voltage Tunnel Transistors for Beyond CMOS Logic”. Proceedings of the IEEE 98 (12): 2095–2110. doi:10.1109/JPROC.2010.2070470.
Teherani, J. T.; Agarwal, S.; Yablonovitch, E.; Hoyt, J. L.; Antoniadis, D. A. (2013). “Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors”. IEEE Electron Device Letters 34 (2): 298. doi:10.1109/LED.2012.2229458.

Seabaugh (September 2013 2013). “The Tunneling Transistor”. IEEE. 2019年1月閲覧。エラー: 閲覧日は年・月・日のすべてを記入してください。