도핑 (반도체) (Korean Wikipedia)

Analysis of information sources in references of the Wikipedia article "도핑 (반도체)" in Korean language version.

refsWebsite

Global rank Korean rank

2books.google.com

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1,459^th place

763^rd place

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2,031^st place

2computerhistory.org

2,213^th place

714^th place

1sites.google.com

626^th place

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books.google.com

A. H. Wilson (1965). 《The Theory of Metals》 2md판. Cambridge University Press.
Levy, Roland Albert (1989). 《Microelectronic Materials and Processes》. Dordrecht: Kluwer Academic. 6–7쪽. ISBN 0-7923-0154-4. 2008년 2월 23일에 확인함.

computerhistory.org

“Computer History Museum – The Silicon Engine|1955 – Photolithography Techniques Are Used to Make Silicon Devices”. Computerhistory.org. 2014년 6월 12일에 확인함.
Computer History Museum – The Silicon Engine 1954 – Diffusion Process Developed for Transistors

doi.org

dx.doi.org

A.B Sproul, M.A Green (1991). “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”. 《J. Appl. Phys.》 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.

harvard.edu

adsabs.harvard.edu

A.B Sproul, M.A Green (1991). “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”. 《J. Appl. Phys.》 70 (2): 846. Bibcode:1991JAP....70..846S. doi:10.1063/1.349645.

pat2pdf.org

John R Woodyard "Nonlinear circuit device utilizing germanium" 미국 특허 2,530,110 filed, 1944, granted 1950
Sparks, Morgan and Teal, Gordon K. "Method of Making P-N Junctions in Semiconductor Materials", 미국 특허 2,631,356 (Filed June 15, 1950. Issued March 17, 1953)

sites.google.com

“Faraday to Shockley – Transistor History”. Sites.google.com. 2016년 2월 2일에 확인함.

uspto.gov

patft.uspto.gov

John R Woodyard "Nonlinear circuit device utilizing germanium" 미국 특허 2,530,110 filed, 1944, granted 1950
Sparks, Morgan and Teal, Gordon K. "Method of Making P-N Junctions in Semiconductor Materials", 미국 특허 2,631,356 (Filed June 15, 1950. Issued March 17, 1953)