双极性晶体管 (Chinese Wikipedia)

Analysis of information sources in references of the Wikipedia article "双极性晶体管" in Chinese language version.

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12web.archive.org

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2computerhistory.org

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1nobelprize.org

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1hm-treasury.gov.uk

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1ece-colorado.edu

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archive.org

童诗白，华成英. 模拟电子技术基础（第四版）. 高等教育出版社. 2006. ISBN 978-7-04-018922-3.
Juin Jei Liou and Jiann S. Yuan. Semiconductor Device Physics and Simulation. Springer. 1998. ISBN 0-306-45724-5.
Paolo Antognetti and Giuseppe Massobrio. Semiconductor Device Modeling with Spice. McGraw–Hill Professional. 1993. ISBN 0-07-134955-3.
邱关源. 电路（第5版）. 高等教育出版社. 2006. ISBN 978-7-04-019671-9.
Adel S. Sedra and Kenneth C. Smith. Microelectronic Circuits, second ed.. 1987. ISBN 0-03-007328-6.

colorado.edu

ecee.colorado.edu

5.3.1. Forward active mode of operation, Principles of Semiconductor Devices. Colorado University. [2012-04-09]. （原始内容存档于2021-04-26）.

computerhistory.org

1947 - Invention of the Point-Contact Transistor. Computer History Museum. [2012-04-02]. （原始内容存档于2015-12-21）.
1948 - Conception of the Junction Transistor. Computer History Museum. [2012-04-02]. （原始内容存档于2012-04-19）.

ece-colorado.edu

5.6.2. Large signal model (Charge control model), Principles of Semiconductor Devices. Colorado University. [2012-04-07]. （原始内容存档于2009-02-07）.

google.com.tw

books.google.com.tw

馮瑞. 固體物理學大辭典. 建宏出版社. : 114 [2016-10-10]. （原始内容存档于2016-10-10）（中文）. 鍺的禁帶寬度較窄

hm-treasury.gov.uk

Third case study–thesolidstateadvent (PDF). The National Archives. [2012-04-07]. （原始内容 (PDF)存档于2007-09-27）.

maxim-ic.com

IC Temperature Sensors Find the Hot Spots. MAXIM. 2002-02-21 [2012-04-06]. （原始内容存档于2012-08-05）.

nobelprize.org

The Nobel Prize in Physics 1956. Nobelprize.org. [2012-04-09]. （原始内容存档于2014-12-18）.

ntu.edu.tw

ee.ntu.edu.tw

李峻霣. 淺談電晶體 (PDF). 台大電機系. [2016-10-10]. （原始内容 (PDF)存档于2016-10-14）（中文）.

rohm.com.tw

電晶體的歷史. 羅姆. [2021-03-19]. （原始内容存档于2022-05-18）.

web.archive.org

The Nobel Prize in Physics 1956. Nobelprize.org. [2012-04-09]. （原始内容存档于2014-12-18）.
1947 - Invention of the Point-Contact Transistor. Computer History Museum. [2012-04-02]. （原始内容存档于2015-12-21）.
1948 - Conception of the Junction Transistor. Computer History Museum. [2012-04-02]. （原始内容存档于2012-04-19）.
Third case study–thesolidstateadvent (PDF). The National Archives. [2012-04-07]. （原始内容 (PDF)存档于2007-09-27）.
電晶體的歷史. 羅姆. [2021-03-19]. （原始内容存档于2022-05-18）.
馮瑞. 固體物理學大辭典. 建宏出版社. : 114 [2016-10-10]. （原始内容存档于2016-10-10）（中文）. 鍺的禁帶寬度較窄
李峻霣. 淺談電晶體 (PDF). 台大電機系. [2016-10-10]. （原始内容 (PDF)存档于2016-10-14）（中文）.
IC Temperature Sensors Find the Hot Spots. MAXIM. 2002-02-21 [2012-04-06]. （原始内容存档于2012-08-05）.
Peter Ashburn. SiGe Heterojunction Bipolar Transistors. New York: Wiley. 2003. Chapter 10 [2012-04-07]. ISBN 0-470-84838-3. （原始内容存档于2009-08-09）.
5.3.1. Forward active mode of operation, Principles of Semiconductor Devices. Colorado University. [2012-04-09]. （原始内容存档于2021-04-26）.
R.C. Jaeger and T.N. Blalock. Microelectronic Circuit Design Second Edition. New York: McGraw-Hill. 2004 [2012-04-07]. ISBN 0-07-232099-0. （原始内容存档于2009-02-28）.
5.6.2. Large signal model (Charge control model), Principles of Semiconductor Devices. Colorado University. [2012-04-07]. （原始内容存档于2009-02-07）.

worldcat.org

Peter Ashburn. SiGe Heterojunction Bipolar Transistors. New York: Wiley. 2003. Chapter 10 [2012-04-07]. ISBN 0-470-84838-3. （原始内容存档于2009-08-09）.
R.C. Jaeger and T.N. Blalock. Microelectronic Circuit Design Second Edition. New York: McGraw-Hill. 2004 [2012-04-07]. ISBN 0-07-232099-0. （原始内容存档于2009-02-28）.