Bhatnagar, M.; Baliga, B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Transactions on Electron Devices. 1993, 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Bruzzia, M.; Navab, F.; Piniac, S.; Russoc, S. High quality SiC applications in radiation dosimetry. Applied Surface Science. 12 December 2001,. Volume 184 (1–4): Pages 425–430. Bibcode:2001ApSS..184..425B. doi:10.1016/S0169-4332(01)00528-1.
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard. Epitaxial graphene(PDF). Solid State Communications. 2007, 143 (1–2): 92–100 [2009-07-31]. Bibcode:2007SSCom.143...92D. doi:10.1016/j.ssc.2007.04.023. (原始内容(free download)存档于2008-12-09).
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Kurt Nassau, Shane F. McClure, and Shane Elen, James E. Shigley. Synthetic Moissanite: A New Diamond Substitute. Gemological Institute Of America. [1997-12-31]. (原始内容存档于2020-11-12).请检查|access-date=中的日期值 (帮助)
Bhatnagar, M.; Baliga, B.J. Comparison of 6H-SiC, 3C-SiC, and Si for power devices. IEEE Transactions on Electron Devices. 1993, 40 (3): 645–655. Bibcode:1993ITED...40..645B. doi:10.1109/16.199372.
Bruzzia, M.; Navab, F.; Piniac, S.; Russoc, S. High quality SiC applications in radiation dosimetry. Applied Surface Science. 12 December 2001,. Volume 184 (1–4): Pages 425–430. Bibcode:2001ApSS..184..425B. doi:10.1016/S0169-4332(01)00528-1.
Kurt Nassau, Shane F. McClure, and Shane Elen, James E. Shigley. Synthetic Moissanite: A New Diamond Substitute. Gemological Institute Of America. [1997-12-31]. (原始内容存档于2020-11-12).请检查|access-date=中的日期值 (帮助)