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سعة كهربية (Arabic Wikipedia)

Analysis of information sources in references of the Wikipedia article "سعة كهربية" in Arabic language version.

refsWebsite
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12doi.org
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11web.archive.org
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5harvard.edu
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4wikidata.org
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4archive.org
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2arxiv.org
69th place
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1collinsdictionary.com
1,053rd place
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1books.google.com
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1av8n.com
low place
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1jpier.org
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1justradios.com
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1zenodo.org
621st place
1,331st place
1nih.gov
4th place
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1pagesofmind.com
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archive.org

arxiv.org

av8n.com

books.google.com

collinsdictionary.com

doi.org

  • G. J. Iafrate؛ K. Hess؛ J. B. Krieger؛ M. Macucci (1995). "Capacitive nature of atomic-sized structures". Phys. Rev. B. ج. 52 ع. 15. Bibcode:1995PhRvB..5210737I. DOI:10.1103/physrevb.52.10737.
  • Massarini, A.؛ Kazimierczuk, M.K. (1997). "Self capacitance of inductors". IEEE Transactions on Power Electronics. ج. 12 ع. 4: 671–676. Bibcode:1997ITPE...12..671M. DOI:10.1109/63.602562: example of the use of the term 'self capacitance'.{{استشهاد بدورية محكمة}}: صيانة الاستشهاد: postscript (link)
  • Smolić، Ivica؛ Klajn، Bruno (2021). "Capacitance matrix revisited". Progress in Electromagnetics Research B. ج. 92: 1–18. DOI:10.2528/PIERB21011501. مؤرشف من الأصل في 2021-05-04. اطلع عليه بتاريخ 2021-05-04.
  • Rawlins، A. D. (1985). "Note on the Capacitance of Two Closely Separated Spheres". IMA Journal of Applied Mathematics. ج. 34 ع. 1: 119–120. DOI:10.1093/imamat/34.1.119.
  • Maxwell، J. C. (1878). "On the electrical capacity of a long narrow cylinder and of a disk of sensible thickness". Proc. London Math. Soc. ج. IX: 94–101. DOI:10.1112/plms/s1-9.1.94. مؤرشف من الأصل في 2020-10-25.
  • Jackson، J. D. (2000). "Charge density on thin straight wire, revisited". Am. J. Phys. ج. 68 ع. 9: 789–799. Bibcode:2000AmJPh..68..789J. DOI:10.1119/1.1302908.
  • T. LaFave Jr. (2011). "Discrete charge dielectric model of electrostatic energy". J. Electrostatics. ج. 69 ع. 6: 414–418. arXiv:1203.3798. DOI:10.1016/j.elstat.2011.06.006.
  • G. J. Iafrate؛ K. Hess؛ J. B. Krieger؛ M. Macucci (1995). "Capacitive nature of atomic-sized structures". Phys. Rev. B. ج. 52 ع. 15: 10737–10739. Bibcode:1995PhRvB..5210737I. DOI:10.1103/physrevb.52.10737. PMID:9980157.
  • T. LaFave Jr؛ R. Tsu (مارس–أبريل 2008). "Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons" (PDF). Microelectronics Journal. ج. 39 ع. 3–4: 617–623. DOI:10.1016/j.mejo.2007.07.105. مؤرشف من الأصل (PDF) في 2014-02-22. اطلع عليه بتاريخ 2014-02-12.
  • Laux، S.E. (أكتوبر 1985). "Techniques for small-signal analysis of semiconductor devices". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. ج. 4 ع. 4: 472–481. DOI:10.1109/TCAD.1985.1270145.
  • Jonscher، A.K. (1986). "The physical origin of negative capacitance". J. Chem. Soc. Faraday Trans. II. ج. 82: 75–81. DOI:10.1039/F29868200075.
  • Ershov، M.؛ Liu، H.C.؛ Li، L.؛ Buchanan، M.؛ Wasilewski، Z.R.؛ Jonscher، A.K. (أكتوبر 1998). "Negative capacitance effect in semiconductor devices". IEEE Trans. Electron Devices. ج. 45 ع. 10: 2196–2206. arXiv:cond-mat/9806145. Bibcode:1998ITED...45.2196E. DOI:10.1109/16.725254.

harvard.edu

ui.adsabs.harvard.edu

  • G. J. Iafrate؛ K. Hess؛ J. B. Krieger؛ M. Macucci (1995). "Capacitive nature of atomic-sized structures". Phys. Rev. B. ج. 52 ع. 15. Bibcode:1995PhRvB..5210737I. DOI:10.1103/physrevb.52.10737.
  • Massarini, A.؛ Kazimierczuk, M.K. (1997). "Self capacitance of inductors". IEEE Transactions on Power Electronics. ج. 12 ع. 4: 671–676. Bibcode:1997ITPE...12..671M. DOI:10.1109/63.602562: example of the use of the term 'self capacitance'.{{استشهاد بدورية محكمة}}: صيانة الاستشهاد: postscript (link)
  • Jackson، J. D. (2000). "Charge density on thin straight wire, revisited". Am. J. Phys. ج. 68 ع. 9: 789–799. Bibcode:2000AmJPh..68..789J. DOI:10.1119/1.1302908.
  • G. J. Iafrate؛ K. Hess؛ J. B. Krieger؛ M. Macucci (1995). "Capacitive nature of atomic-sized structures". Phys. Rev. B. ج. 52 ع. 15: 10737–10739. Bibcode:1995PhRvB..5210737I. DOI:10.1103/physrevb.52.10737. PMID:9980157.
  • Ershov، M.؛ Liu، H.C.؛ Li، L.؛ Buchanan، M.؛ Wasilewski، Z.R.؛ Jonscher، A.K. (أكتوبر 1998). "Negative capacitance effect in semiconductor devices". IEEE Trans. Electron Devices. ج. 45 ع. 10: 2196–2206. arXiv:cond-mat/9806145. Bibcode:1998ITED...45.2196E. DOI:10.1109/16.725254.

jpier.org

justradios.com

nih.gov

pubmed.ncbi.nlm.nih.gov

pagesofmind.com

web.archive.org

wikidata.org

zenodo.org