Grafè (Catalan Wikipedia)

Analysis of information sources in references of the Wikipedia article "Grafè" in Catalan language version.

refsWebsite

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9doi.org

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4web.archive.org

1^st place

4harvard.edu

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2nih.gov

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2technologyreview.com

1,943^rd place

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1elpais.com

84^th place

9^th place

1sciencemag.org

857^th place

278^th place

1man.ac.uk

low place

6,832^nd place

1gatech.edu

4,448^th place

5,302^nd place

1arxiv.org

69^th place

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1techworld.com

low place

1aist.go.jp

8,759^th place

low place

1nature.com

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1europa.eu

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49^th place

aist.go.jp

Naoki Yokoyama, Shu Nakaharai| «Development of a Graphene Transistor with a New Operating». AIST. Arxivat de l'original el 2013-04-13 [Consulta: 28 juny 2013]. Arxivat 2013-04-13 a Wayback Machine.

arxiv.org

Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, pàg. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.

doi.org

dx.doi.org

Saito, R. et al. «Electronic structure of graphene tubules based on C60». Phys. Rev. B, 46, 1992, pàg. 1804. DOI: 10.1103/PhysRevB.46.1804.
Forbeaux, I. et al. «Heteroepitaxial graphite on 6H-SiC(0001): Interface formation through conduction-band electronic structure». Phys. Rev. B, 58, 1998, pàg. 16396. DOI: 10.1103/PhysRevB.58.16396.
Wang, S. et al. «A new carbonaceous material with large capacity and high efficiency for rechargeable Li-ion batteries». Journal of the Electrochemical Society, 147, 2000, pàg. 2498. DOI: 10.1149/1.1393559.
Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim «Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier». Science, 336, 6085, 2012, pàg. 1140-1143. DOI: 10.1126.
Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, pàg. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.
Echtermeyer, Tim. J. et al. «Nonvolatile Switching in Graphene Field-Effect Devices». IEEE Electron Device Letters, 29, 8, 2008, pàg. 952. Bibcode: 2008IEDL...29..952E. DOI: 10.1109/LED.2008.2001179.
Sordan, R.; Traversi, F.; Russo, V. «Logic gates with a single graphene transistor». Appl. Phys. Lett., 94, 7, 2009, pàg. 073305. Bibcode: 2009ApPhL..94g3305S. DOI: 10.1063/1.3079663.
Wang, H.; Nezich, D.; Kong, J.; Palacios, T. «Graphene Frequency Multipliers». IEEE Electr. Device. L., 30, 5, 2009, pàg. 547. DOI: 10.1109/LED.2009.2016443.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, pàg. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

elpais.com

Calzada, Miguel «Próximamente en sus pantallas: el grafeno» (paper) (en castellà). Ciberp@is. El País [Madrid], 08-08-2010 [Consulta: 12 setembre 2011].

europa.eu

ec.europa.eu

«La Comissió anuncia l'entrada de nous socis en el projecte europeu del grafè». UE, 6-2014 [Consulta: 25 juny 2014].

gatech.edu

gtresearchnews.gatech.edu

Carbon-Based Electronics: Researchers Develop Foundation for Circuitry and Devices Based on Graphite March 14, 2006

harvard.edu

adsabs.harvard.edu

Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, pàg. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.
Echtermeyer, Tim. J. et al. «Nonvolatile Switching in Graphene Field-Effect Devices». IEEE Electron Device Letters, 29, 8, 2008, pàg. 952. Bibcode: 2008IEDL...29..952E. DOI: 10.1109/LED.2008.2001179.
Sordan, R.; Traversi, F.; Russo, V. «Logic gates with a single graphene transistor». Appl. Phys. Lett., 94, 7, 2009, pàg. 073305. Bibcode: 2009ApPhL..94g3305S. DOI: 10.1063/1.3079663.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, pàg. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

man.ac.uk

onnes.ph.man.ac.uk

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.

nature.com

K. J. Tielrooij, J. C. W. Song, S. A. Jensen, A. Centeno, A. Pesquera, A. Zurutuza Elorza, M. Bonn, L. S. Levitov and F. H. L. Koppens «Photoexcitation cascade and multiple hot-carrier generation in graphene». Nature Physics, 2013, pàg. 248–252.

nih.gov

ncbi.nlm.nih.gov

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, pàg. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

sciencemag.org

Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim «Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier». Science, 336, 6085, 2012, pàg. 1140-1143. DOI: 10.1126.

technologyreview.com

Bullis, K. «Graphene Transistors». MIT Technology Review, Inc [Cambridge], 28-01-2008 [Consulta: 18 febrer 2008]. Arxivat 2020-04-10 a Wayback Machine. «Còpia arxivada». Arxivat de l'original el 2020-04-10. [Consulta: 7 gener 2023].
Bourzac, Katherine «Graphene Transistors that Can Work at Blistering Speeds». MIT Technology Review, 05-02-2010.

techworld.com

news.techworld.com

IBM shows off 100 GHz graphene transistor – Techworld.com Arxivat 2011-06-26 a Wayback Machine.. News.techworld.com. Retrieved on 2010-12-10.

web.archive.org

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.
Bullis, K. «Graphene Transistors». MIT Technology Review, Inc [Cambridge], 28-01-2008 [Consulta: 18 febrer 2008]. Arxivat 2020-04-10 a Wayback Machine. «Còpia arxivada». Arxivat de l'original el 2020-04-10. [Consulta: 7 gener 2023].
IBM shows off 100 GHz graphene transistor – Techworld.com Arxivat 2011-06-26 a Wayback Machine.. News.techworld.com. Retrieved on 2010-12-10.
Naoki Yokoyama, Shu Nakaharai| «Development of a Graphene Transistor with a New Operating». AIST. Arxivat de l'original el 2013-04-13 [Consulta: 28 juny 2013]. Arxivat 2013-04-13 a Wayback Machine.