Grafè (Catalan Wikipedia)

Analysis of information sources in references of the Wikipedia article "Grafè" in Catalan language version.

Last modified: 02:22:55, 17 August 2026 (UTC)

Ref.Un. Ref.Website

Global rank Catalan rank

99doi.org

2^nd place

4^th place

55web.archive.org

1^st place

44adsabs.harvard.edu

14^th place

22^nd place

22archive.org

6^th place

15^th place

22nih.gov

5^th place

7^th place

22technologyreview.com

2,515^th place

1,690^th place

11elpais.com

89^th place

11^th place

11sciencemag.org

1,019^th place

374^th place

11man.ac.uk

low place

6,211^th place

11gatech.edu

4,205^th place

4,468^th place

11arxiv.org

49^th place

84^th place

11techworld.com

low place

11aist.go.jp

low place

11nature.com

207^th place

136^th place

11europa.eu

62^nd place

73^rd place

adsabs.harvard.edu (Global: 14^th place; Catalan: 22^nd place)

Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, p. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.
Echtermeyer, Tim. J. et al. «Nonvolatile Switching in Graphene Field-Effect Devices». IEEE Electron Device Letters, 29, 8, 2008, p. 952. Bibcode: 2008IEDL...29..952E. DOI: 10.1109/LED.2008.2001179.
Sordan, R.; Traversi, F.; Russo, V. «Logic gates with a single graphene transistor». Appl. Phys. Lett., 94, 7, 2009, p. 073305. Bibcode: 2009ApPhL..94g3305S. DOI: 10.1063/1.3079663.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, p. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

aist.go.jp (Global: low place; Catalan: low place)

Naoki Yokoyama, Shu Nakaharai| «Development of a Graphene Transistor with a New Operating». AIST. Arxivat de l'original el 2013-04-13 [Consulta: 28 juny 2013]. Arxivat 2013-04-13 a Wayback Machine.

archive.org (Global: 6^th place; Catalan: 15^th place)

Wang, S. et al. «A new carbonaceous material with large capacity and high efficiency for rechargeable Li-ion batteries». Journal of the Electrochemical Society, 147, 2000, p. 2498. DOI: 10.1149/1.1393559.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, p. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

arxiv.org (Global: 49^th place; Catalan: 84^th place)

Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, p. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.

doi.org (Global: 2^nd place; Catalan: 4^th place)

dx.doi.org

Saito, R. et al. «Electronic structure of graphene tubules based on C60». Phys. Rev. B, 46, 1992, p. 1804. DOI: 10.1103/PhysRevB.46.1804.
Forbeaux, I. et al. «Heteroepitaxial graphite on 6H-SiC(0001): Interface formation through conduction-band electronic structure». Phys. Rev. B, 58, 1998, p. 16396. DOI: 10.1103/PhysRevB.58.16396.
Wang, S. et al. «A new carbonaceous material with large capacity and high efficiency for rechargeable Li-ion batteries». Journal of the Electrochemical Society, 147, 2000, p. 2498. DOI: 10.1149/1.1393559.
Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim «Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier». Science, 336, 6085, 2012, p. 1140-1143. DOI: 10.1126.
Lemme, M. C. et al. «A graphene field-effect device». IEEE Electron Device Letters, 28, 4, 2007, p. 282. arXiv: cond-mat/0703208. Bibcode: 2007IEDL...28..282L. DOI: 10.1109/LED.2007.891668.
Echtermeyer, Tim. J. et al. «Nonvolatile Switching in Graphene Field-Effect Devices». IEEE Electron Device Letters, 29, 8, 2008, p. 952. Bibcode: 2008IEDL...29..952E. DOI: 10.1109/LED.2008.2001179.
Sordan, R.; Traversi, F.; Russo, V. «Logic gates with a single graphene transistor». Appl. Phys. Lett., 94, 7, 2009, p. 073305. Bibcode: 2009ApPhL..94g3305S. DOI: 10.1063/1.3079663.
Wang, H.; Nezich, D.; Kong, J.; Palacios, T. «Graphene Frequency Multipliers». IEEE Electr. Device. L., 30, 5, 2009, p. 547. DOI: 10.1109/LED.2009.2016443.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, p. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

elpais.com (Global: 89^th place; Catalan: 11^th place)

Calzada, Miguel «Próximamente en sus pantallas: el grafeno» (paper) (en castellà). Ciberp@is. El País [Madrid], 8 agost 2010 [Consulta: 12 setembre 2011].

europa.eu (Global: 62^nd place; Catalan: 73^rd place)

ec.europa.eu

«La Comissió anuncia l'entrada de nous socis en el projecte europeu del grafè». UE, 6-2014 [Consulta: 25 juny 2014].

gatech.edu (Global: 4,205^th place; Catalan: 4,468^th place)

gtresearchnews.gatech.edu

Carbon-Based Electronics: Researchers Develop Foundation for Circuitry and Devices Based on Graphite Arxivat 2009-04-14 a Wayback Machine. March 14, 2006

man.ac.uk (Global: low place; Catalan: 6,211^th place)

onnes.ph.man.ac.uk

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.

nature.com (Global: 207^th place; Catalan: 136^th place)

K. J. Tielrooij, J. C. W. Song, S. A. Jensen, A. Centeno, A. Pesquera, A. Zurutuza Elorza, M. Bonn, L. S. Levitov and F. H. L. Koppens «Photoexcitation cascade and multiple hot-carrier generation in graphene». Nature Physics, 2013, p. 248–252.

nih.gov (Global: 5^th place; Catalan: 7^th place)

ncbi.nlm.nih.gov

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.
Lin et al.; Dimitrakopoulos, C; Jenkins, KA; Farmer, DB; Chiu, HY; Grill, A; Avouris, P «100-GHz Transistors from Wafer-Scale Epitaxial Graphene». Science. Science, 327, 5966, 2010, p. 662. Bibcode: 2010Sci...327..662L. DOI: 10.1126/science.1184289. PMID: 20133565.

sciencemag.org (Global: 1,019^th place; Catalan: 374^th place)

Heejun Yang, Jinseong Heo, Seongjun Park, Hyun Jae Song, David H. Seo, Kyung-Eun Byun, Philip Kim, InKyeong Yoo, Hyun-Jong Chung, Kinam Kim «Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier». Science, 336, 6085, 2012, p. 1140-1143. DOI: 10.1126.

technologyreview.com (Global: 2,515^th place; Catalan: 1,690^th place)

Bullis, K. «Graphene Transistors». MIT Technology Review, Inc [Cambridge], 28-01-2008 [Consulta: 18 febrer 2008]. Arxivat 2020-04-10 a Wayback Machine. «Còpia arxivada». Arxivat de l'original el 2020-04-10. [Consulta: 7 gener 2023].
Bourzac, Katherine «Graphene Transistors that Can Work at Blistering Speeds». MIT Technology Review, 05-02-2010.

techworld.com (Global: low place; Catalan: low place)

news.techworld.com

IBM shows off 100 GHz graphene transistor – Techworld.com Arxivat 2011-06-26 a Wayback Machine.. News.techworld.com. Retrieved on 2010-12-10.

web.archive.org (Global: 1^st place; Catalan: 1^st place)

Novoselov, K. S. et al. (2004). "Electric Field Effect in Atomically Thin Carbon Films". Science 306 (5696): 666. arXiv:cond-mat/0410550. Bibcode 2004Sci...306..666N. doi:10.1126/science.1102896. PMID: 15499015. http://onnes.ph.man.ac.uk/nano/Publications/Science_2004.pdf Arxivat 2006-10-13 a Wayback Machine.
Carbon-Based Electronics: Researchers Develop Foundation for Circuitry and Devices Based on Graphite Arxivat 2009-04-14 a Wayback Machine. March 14, 2006
Bullis, K. «Graphene Transistors». MIT Technology Review, Inc [Cambridge], 28-01-2008 [Consulta: 18 febrer 2008]. Arxivat 2020-04-10 a Wayback Machine. «Còpia arxivada». Arxivat de l'original el 2020-04-10. [Consulta: 7 gener 2023].
IBM shows off 100 GHz graphene transistor – Techworld.com Arxivat 2011-06-26 a Wayback Machine.. News.techworld.com. Retrieved on 2010-12-10.
Naoki Yokoyama, Shu Nakaharai| «Development of a Graphene Transistor with a New Operating». AIST. Arxivat de l'original el 2013-04-13 [Consulta: 28 juny 2013]. Arxivat 2013-04-13 a Wayback Machine.

Grafè (Catalan Wikipedia)

adsabs.harvard.edu (Global: 14th place; Catalan: 22nd place)

aist.go.jp (Global: low place; Catalan: low place)

archive.org (Global: 6th place; Catalan: 15th place)

arxiv.org (Global: 49th place; Catalan: 84th place)

doi.org (Global: 2nd place; Catalan: 4th place)

dx.doi.org

elpais.com (Global: 89th place; Catalan: 11th place)

europa.eu (Global: 62nd place; Catalan: 73rd place)

ec.europa.eu

gatech.edu (Global: 4,205th place; Catalan: 4,468th place)

gtresearchnews.gatech.edu

man.ac.uk (Global: low place; Catalan: 6,211th place)

onnes.ph.man.ac.uk

nature.com (Global: 207th place; Catalan: 136th place)

nih.gov (Global: 5th place; Catalan: 7th place)

ncbi.nlm.nih.gov

sciencemag.org (Global: 1,019th place; Catalan: 374th place)

technologyreview.com (Global: 2,515th place; Catalan: 1,690th place)

techworld.com (Global: low place; Catalan: low place)

news.techworld.com

web.archive.org (Global: 1st place; Catalan: 1st place)

adsabs.harvard.edu (Global: 14^th place; Catalan: 22^nd place)

archive.org (Global: 6^th place; Catalan: 15^th place)

arxiv.org (Global: 49^th place; Catalan: 84^th place)

doi.org (Global: 2^nd place; Catalan: 4^th place)

elpais.com (Global: 89^th place; Catalan: 11^th place)

europa.eu (Global: 62^nd place; Catalan: 73^rd place)

gatech.edu (Global: 4,205^th place; Catalan: 4,468^th place)

man.ac.uk (Global: low place; Catalan: 6,211^th place)

nature.com (Global: 207^th place; Catalan: 136^th place)

nih.gov (Global: 5^th place; Catalan: 7^th place)

sciencemag.org (Global: 1,019^th place; Catalan: 374^th place)

technologyreview.com (Global: 2,515^th place; Catalan: 1,690^th place)

web.archive.org (Global: 1^st place; Catalan: 1^st place)