PRAM (Catalan Wikipedia)

Analysis of information sources in references of the Wikipedia article "PRAM" in Catalan language version.

Last modified: 03:30:15, 8 July 2026 (UTC)

Ref.Un. Ref.Website

Global rank Catalan rank

55adsabs.harvard.edu

14^th place

22^nd place

55doi.org

2^nd place

4^th place

33nih.gov

5^th place

7^th place

22worldcat.org

4^th place

6^th place

22semanticscholar.org

15^th place

658^th place

11iop.org

1,046^th place

650^th place

11ieee.org

912^th place

402^nd place

11arxiv.org

49^th place

84^th place

adsabs.harvard.edu (Global: 14^th place; Catalan: 22^nd place)

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, p. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, p. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, p. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28 febrer 2013, p. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, p. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

arxiv.org (Global: 49^th place; Catalan: 84^th place)

Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28 febrer 2013, p. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.

doi.org (Global: 2^nd place; Catalan: 4^th place)

dx.doi.org

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, p. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, p. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, p. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28 febrer 2013, p. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, p. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

ieee.org (Global: 912^th place; Catalan: 402^nd place)

ieeexplore.ieee.org

Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, p. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.

iop.org (Global: 1,046^th place; Catalan: 650^th place)

iopscience.iop.org

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, p. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].

nih.gov (Global: 5^th place; Catalan: 7^th place)

ncbi.nlm.nih.gov

Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, p. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28 febrer 2013, p. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, p. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

semanticscholar.org (Global: 15^th place; Catalan: 658^th place)

Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, p. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, p. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

worldcat.org (Global: 4^th place; Catalan: 6^th place)

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, p. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, p. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.

PRAM (Catalan Wikipedia)

adsabs.harvard.edu (Global: 14th place; Catalan: 22nd place)

arxiv.org (Global: 49th place; Catalan: 84th place)

doi.org (Global: 2nd place; Catalan: 4th place)