PRAM (Catalan Wikipedia)

Analysis of information sources in references of the Wikipedia article "PRAM" in Catalan language version.

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arxiv.org

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, pàg. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, pàg. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, pàg. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28-02-2013, pàg. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, pàg. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, pàg. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, pàg. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.
Simpson, R.E.; P. Fons; A. V. Kolobov; T. Fukaya; M. Krbal; 4 «Interfacial phase-change memory.». Nature Nanotechnology, 6, 8, 7-2011, pàg. 501–5. Bibcode: 2011NatNa...6..501S. DOI: 10.1038/nnano.2011.96. PMID: 21725305.
Di Ventra, Massimiliano; Pershin, Yuriy V. «On the physical properties of memristive, memcapacitive, and meminductive systems». Nanotechnology, 24, 25, 28-02-2013, pàg. 255201. arXiv: 1302.7063. Bibcode: 2013Nanot..24y5201D. DOI: 10.1088/0957-4484/24/25/255201. PMID: 23708238.
Simpson, R. E. «Memory cell using bistable resistivity in amorphous As-Te-Ge film». Nano Letters, 10, 2, 1969, pàg. 414–9. Bibcode: 2010NanoL..10..414S. DOI: 10.1021/nl902777z. PMID: 20041706.

Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, pàg. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, pàg. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].

Le Gallo, Manuel; Sebastian, Abu «An overview of phase-change memory device physics» (en anglès). Journal of Physics D: Applied Physics, 53, 21, 30-03-2020, pàg. 213002. Bibcode: 2020JPhD...53u3002L. DOI: 10.1088/1361-6463/ab7794. ISSN: 0022-3727 [Consulta: 2 maig 2023].
Burr, Geoffrey W.; BrightSky, Matthew J.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jau-Yi «Recent Progress in Phase-Change Memory Technology». IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6, 2, 6-2016, pàg. 146–162. Bibcode: 2016IJEST...6..146B. DOI: 10.1109/JETCAS.2016.2547718. ISSN: 2156-3357.