25 August, 2004, BBC News: Door open for silicon replacement Citat: "...Previous research has already shown that even at red-hot temperatures as high as 650C (1,202F), silicon carbide devices can function unperturbed and without the need for cooling....One exciting application for silicon carbide could be in deep-space missions, where nuclear power would be needed for the craft. Radiation-hardened silicon carbide devices would reduce the shielding needed to protect reactor control electronics..."
powerelectronics.com
Oct 28, 2011, powerelectronics.com: SiC “Super” Junction Transistors Deliver High Temp PerformanceArkiveret 23. december 2011 hos Wayback Machine Citat: "...GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions (< 15 ns)...The leakage current in the SJT at VDS = 1200 V is below 5 µA up to temperatures as high as 225 °C. Leakage currents of < 100 µA were measured even at 325 °C..."
purdue.edu
docs.lib.purdue.edu
2001, purdue.edu: Lateral power MOSFETs in silicon carbide Citat: "...silicon carbide is considered to be the material of choice for power switching electronics in the future...we present the first lateral power devices on a semi-insulating vanadium doped substrate of silicon carbide. The first generation of lateral DMOSFETs in 4H-SiC yielded a blocking voltage of 2.6 kV..."
web.archive.org
Oct 28, 2011, powerelectronics.com: SiC “Super” Junction Transistors Deliver High Temp PerformanceArkiveret 23. december 2011 hos Wayback Machine Citat: "...GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions (< 15 ns)...The leakage current in the SJT at VDS = 1200 V is below 5 µA up to temperatures as high as 225 °C. Leakage currents of < 100 µA were measured even at 325 °C..."
