Patent US3660819A: Floating gate transistor and method for charging and discharging the same. Angemeldet am 15. Juni 1970, veröffentlicht am 2. Mai 1972, Anmelder: Intel Corp, Erfinder: Dov Frohman-Bentchkowsky.
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Dov Frohman-Bentchkowsky: A circuit model for the step recovery diode. M.S. Thesis (in Engineering), University of California, Berkeley. 1965, OCLC20123955.
Dov Frohman-Bentchkowsky: Charge transport and storage in metal-nitride-oxide-silicon (MNOS) structures and its memory applications. Ph. D. Thesis (Engineering), University of California, Berkeley. 1969, OCLC20214296.
