Heterojunction bipolar transistor (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Heterojunction bipolar transistor" in German language version.

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Herbert Kroemer: Theory of a Wide-Gap Emitter for Transistors. In: Proceedings of the IRE. Band 45, Nr. 11, November 1957, S. 1535–1537, doi:10.1109/JRPROC.1957.278348.
Walid Hafez, William Snodgrass, Milton Feng: 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving f_T=710GHz and f_MAX=340GHz. In: Applied Physics Letters. Band 87, Nr. 25, 14. Dezember 2005, S. 252109, doi:10.1063/1.2149510.

Patent US2569347A: Circuit element utilizing semiconductive material. Veröffentlicht am 25. September 1951, Anmelder: Bell Labs, Erfinder: William Shockley.‌