Mehrfachstrukturierung (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Mehrfachstrukturierung" in German language version.

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doi.org

  • Tokuyuki Honda, Yasuhiro Kishikawa, Yuichi Iwasaki, Akinori Ohkubo, Miyoko Kawashima, Minoru Yoshii: Influence of resist blur on ultimate resolution of ArF immersion lithography. In: Journal of Microlithography, Microfabrication, and Microsystems. Band 5, 2006, S. 043004, doi:10.1117/1.2397018.
  • Carlos Fonseca, Mark Somervell, Steven Scheer, Wallace Printz, Kathleen Nafus, Shinichi Hatakeyama, Yuhei Kuwahara, Takafumi Niwa, Sophie Bernard, Roel Gronheid: Advances and challenges in dual-tone development process optimization. SPIE, 2009, S. 72740I, doi:10.1117/12.814289.
  • Xuefeng Hua, S. Engelmann, G. S. Oehrlein, P. Jiang, P. Lazzeri, E. Iacob, M. Anderle: Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials. In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Band 24, 2006, S. 1850–1858, doi:10.1116/1.2217973.
  • Yang-Kyu Choi, Ji Zhu, Jeff Grunes, Jeffrey Bokor, Gabor. A. Somorjai: Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography. In: J. Phys. Chem. B. Band 107, Nr. 15, 2003, S. 3340–3343, doi:10.1021/jp0222649.
  • Soyoung Song, Shoichi Yokoyama, Shigeru Takahara, Tsuguo Yamaoka: Novel dual-mode photoresist based on decarboxylation by photogenerated base compound Novel dual-mode photoresist based on decarboxylation by photogenerated base compound. In: Polymers for Advanced Technologies. Band 9, Nr. 6, 1998, S. 326–333, doi:10.1002/(SICI)1099-1581(199806)9:6<326::AID-PAT785>3.0.CO;2-5.
  • Xinyu Gu u. a.: A New Materials-based Pitch Division Technique A New Materials-based Pitch Division Technique. In: Journal of Photopolymer Science and Technology. Band 22, Nr. 6, 2009, S. 773–781, doi:10.2494/photopolymer.22.773.
  • Andrew Carlson, Tsu-Jae King Liu: Negative and iterated spacer lithography processes for low variability and ultra-dense integration. Band 6924. SPIE, 2008, S. 69240B, doi:10.1117/12.772049.
  • B. Degroote u. a.: Spacer defined FinFET: Active area patterning of sub-20 nm fins with high density. In: Microelectronic Engineering. Band 84, Nr. 4, 2007, S. 609–618, doi:10.1016/j.mee.2006.12.003.
  • Yang-Kyu Choi: Sub-lithographic patterning technology for nanowire model catalysts and DNA label-free hybridization detection. Band 5220. SPIE, 2003, S. 10–19, doi:10.1117/12.505409.
  • Beom-Seok Seo u. a.: Double patterning addressing imaging challenges for near- and sub-k. SPIE, 2009, S. 73791N-73791N-10, doi:10.1117/12.824300.
  • C. Auth u. a.: 45nm High-k+ metal gate strain-enhanced transistors. In: Intel Technology Journal. Vol. 12, Nr. 2, 2008, S. 77–86, doi:10.1109/VLSIT.2008.4588589 (download.intel.com (Memento vom 10. Juli 2012 im Internet Archive) [PDF]).
  • Erik Anderson, Weilun Chao: Double exposure makes dense high-resolution diffractive optics. In: SPIE Newsroom. 2007, doi:10.1117/2.1200702.0599.
  • Weilun Chao, Jihoon Kim, Senajith Rekawa, Peter Fischer, Erik Anderson: Hydrogen silsesquioxane double patterning process for 12nm resolution x-ray zone plates. In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Band 27, 2009, S. 2606–2611, doi:10.1116/1.3242694.
  • Weilun Chao, Erik H. Anderson, Peter Fischer, Dong-Hyun Kim: Toward sub-10-nm resolution zone plates using the overlay nanofabrication processes. In: Proc. SPIE. Band 6883, 2008, S. 688309, doi:10.1117/12.768878.

eetimes.com

electroiq.com

  • Katherine Derbyshire: Double development offers simpler double patterning. In: Solid State Technology. Band 51, Nr. 5, 2008, S. 18–20 (HTML).

espacenet.com

worldwide.espacenet.com

  • Patent US6114082: Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same. Veröffentlicht am 5. September 2000.

redirecter.toolforge.org

  • vgl. Michael Lercel: 2006 Lithography Update. (PDF) In: ITRS Winter Conference 2006. 2006, S. 9, archiviert vom Original (nicht mehr online verfügbar) am 15. Juli 2014; abgerufen am 12. Mai 2013.
  • vgl. M. Maenhoudt, D. Vangoidsenhoven, T. Vandeweyer, R. Gronheid, J. Versluijs, A. Miller: Double Patterning process development at IMEC. (PDF) In: Litho Forum 2008. 2008, S. 4, archiviert vom Original (nicht mehr online verfügbar) am 14. Juli 2014; abgerufen am 12. Mai 2013.
  • vgl. Michael Lercel: 2006 Lithography Update. (PDF) In: ITRS Winter Conference 2006. 2006, S. 8, archiviert vom Original (nicht mehr online verfügbar) am 15. Juli 2014; abgerufen am 12. Mai 2013.
  • D. Vogler: Intel product launch event yields more insight into its manufacturing strategy. In: Solid State Technology (jetzt ElectroIQ). November 2007, archiviert vom Original (nicht mehr online verfügbar) am 30. Juli 2012; abgerufen am 23. November 2011.

web.archive.org

  • vgl. Michael Lercel: 2006 Lithography Update. (PDF) In: ITRS Winter Conference 2006. 2006, S. 9, archiviert vom Original (nicht mehr online verfügbar) am 15. Juli 2014; abgerufen am 12. Mai 2013.
  • S. Kusumoto u. a.: Double Patterning with Resist Freezing Process. In: Workshop on Optical Lithography at 22nm and 16nm. 15. Mai 2008 (Vortragsfolien als PDF (Memento vom 14. Juli 2014 im Internet Archive)).
  • vgl. M. Maenhoudt, D. Vangoidsenhoven, T. Vandeweyer, R. Gronheid, J. Versluijs, A. Miller: Double Patterning process development at IMEC. (PDF) In: Litho Forum 2008. 2008, S. 4, archiviert vom Original (nicht mehr online verfügbar) am 14. Juli 2014; abgerufen am 12. Mai 2013.
  • vgl. Michael Lercel: 2006 Lithography Update. (PDF) In: ITRS Winter Conference 2006. 2006, S. 8, archiviert vom Original (nicht mehr online verfügbar) am 15. Juli 2014; abgerufen am 12. Mai 2013.
  • Double patterning lithography (Memento vom 11. Dezember 2010 im Internet Archive). IMEC, 2007.
  • C. Auth u. a.: 45nm High-k+ metal gate strain-enhanced transistors. In: Intel Technology Journal. Vol. 12, Nr. 2, 2008, S. 77–86, doi:10.1109/VLSIT.2008.4588589 (download.intel.com (Memento vom 10. Juli 2012 im Internet Archive) [PDF]).
  • Intel 45 nm process at IEDM (Memento vom 24. März 2009 im Internet Archive)
  • Yan Borodovsky: ArF lithography extension for critical layer patterning. LithoVision 2010, 21st Feb.,San. Jose, CA/USA (2010). Zitiert nach: Intel Sr. Fellow Recommends Complementary Solutions for ArF Extension (Memento vom 14. Juli 2011 im Internet Archive). Nikon Precision Inc. 2010.
  • Garry Tessler: Enabling MLC Flash SSD In Enterprise Storage. 2010 Flash Memory Summit (Vortrag, Vortragsfolien online (Memento vom 11. Juli 2011 im Internet Archive))