Niedrigtemperatur-Polykristallines Silizium (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Niedrigtemperatur-Polykristallines Silizium" in German language version.

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doi.org

  • G. Harbeke, L. Krausbauer, E. F. Steigmeier, A. E. Widmer, H. F. Kappert, G. Neugebauer: Growth and Physical Properties of LPCVD Polycrystalline Silicon Films. In: Journal of The Electrochemical Society. Band 131, Nr. 3, 1. März 1984, S. 675, doi:10.1149/1.2115672.
  • Miltiadis K. Hatalis, David W. Greve: Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films. In: Journal of Applied Physics. Band 63, Nr. 7, April 1988, S. 2260–2266, doi:10.1063/1.341065.
  • M.K. Hatalis, D.W. Greve: High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films. In: IEEE Electron Device Letters. Band 8, Nr. 8, August 1987, S. 361–364, doi:10.1109/EDL.1987.26660.
  • Zhiguo Meng, Mingxiang Wang, Man Wong: High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications. In: IEEE Transactions on Electron Devices. Band 47, Nr. 2, Februar 2000, S. 404–409, doi:10.1109/16.822287.
  • Satoshi Inoue, Hiroyuki Ohshima, Tatsuya Shimoda: Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors. In: Japanese Journal of Applied Physics. Band 41, 11R, 1. November 2002, S. 6313–6319, doi:10.1143/JJAP.41.6313.
  • G.A. Bhat, Z. Jin, H.S. Kwok, M. Wong: The effects of MIC/MILC interface on the performance of MILC-TFTs. In: 56th Annual Device Research Conference Digest (Cat. No.98TH8373). 1998, S. 110–111, doi:10.1109/DRC.1998.731143.
  • Yue Kuo: Thin Film Transistor Technology—Past, Present, and Future. In: The Electrochemical Society Interface. Band 22, Nr. 1, 1. Januar 2013, S. 55, doi:10.1149/2.F06131if.
  • T. Sameshima, S. Usui, M. Sekiya: XeCl Excimer laser annealing used in the fabrication of poly-Si TFT’s. In: IEEE Electron Device Letters. Band 7, Nr. 5, Mai 1986, S. 276–278, doi:10.1109/EDL.1986.26372.
  • Shuichi Uchikoga: Low-Temperature Polycrystalline Silicon Thin-Film Transistor Technologies for System-on-Glass Displays. In: MRS Bulletin. Band 27, Nr. 11, November 2002, S. 881–886, doi:10.1557/mrs2002.277.
  • K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, H. Sirringhaus: Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. In: Nature Materials. Band 10, Nr. 1, Januar 2011, S. 45–50, doi:10.1038/nmat2914.

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worldwide.espacenet.com

  • Patent US5275851: Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates. Angemeldet am 3. März 1993, veröffentlicht am 4. Januar 1994, Erfinder: Stephen J. Fonash, Gang Liu.