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Siliciumcarbid (German Wikipedia)

Analysis of information sources in references of the Wikipedia article "Siliciumcarbid" in German language version.

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14doi.org
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3web.archive.org
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2dguv.de
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2elektronikpraxis.de
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2harvard.edu
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2europa.eu
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2esa.int
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1suva.ch
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1usgs.gov
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1reach-clp-biozid-helpdesk.de
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1google.de
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1dlr.de
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1uni-erlangen.de
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1mementoweb.org
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1space-airbusds.com
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1disco.co.jp
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1infinite-electronic.de
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1mitsubishielectric.com
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1rohm.com
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1nih.gov
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1ieee.org
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1cesic.de
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cesic.de

  • Engineered Ceramic Materials GmbH, (Hrsg.): Cesic Material Properties. Type: HB-Cesic. Juni 2011 (cesic.de [PDF; abgerufen am 26. Oktober 2020] Datenblatt).

cmbl.org.pl

  • Monika Rakoczy-Trojanowska: Alternative methods of plant transformation--a short review. In: Cellular & Molecular Biology Letters. Band 7, Nr. 3, 2002, S. 849–858 (PDF [abgerufen am 15. Januar 2013]).

deadurl.invalid

dguv.de

gestis.dguv.de

disco.co.jp

dlr.de

doi.org

  • Andrey S. Bakin: SiC Homoepitaxy and Heteroepitaxy. In: SiC Materials and Devices (= Selected Topics in Electronics and Systems. Volume 40). World Scientific, 2006, ISBN 978-981-256-835-9, S. 43–76, doi:10.1142/9789812773371_0002.
  • C. Persson, U. Lindefelt: Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap. In: Phys. Rev. B. Band 54, Nr. 15, 1996, S. 10257–10260, doi:10.1103/PhysRevB.54.10257.
  • W. Y. Ching, Y. N. Xu, P. Rulis, L. Ouyang: The electronic structure and spectroscopic properties of 3C, 2H, 4H, 6H, 15R and 21R polymorphs of SiC. In: Materials Science & Engineering A. Band 422, Nr. 1–2, 2006, S. 147–156, doi:10.1016/j.msea.2006.01.007.
  • F. Kneer: Hopes and expectations with GREGOR. In: Astronomische Nachrichten. Band 333, 1. November 2012, S. 790, doi:10.1002/asna.201211726.
  • John F. Seely, Benjawan Kjornrattanawanich, Glenn E. Holland, Raj Korde: Response of a SiC photodiode to extreme ultraviolet through visible radiation. In: Optics Letters. Band 30, Nr. 23, 1. Dezember 2005, S. 3120–3122, doi:10.1364/OL.30.003120.
  • A. K. Agarwal, G. Augustine, V. Balakrishna, C. D. Brandt, A. A. Burk, Li-Shu Chen, R. C. Clarke, P. M. Esker, H. M. Hobgood, R. H. Hopkins, A. W. Morse, L. B. Rowland, S. Seshadri, R. R. Siergiej, T. J. Smith, S. Sriram: SiC electronics. In: International Electron Devices Meeting, 1996. 1996, S. 225–230, doi:10.1109/IEDM.1996.553573.
  • Philip G. Neudeck, David J. Spry, Liangyu Chen, Dorothy Lukco, Carl W. Chang: Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C. In: 2016 European Conference on Silicon Carbide Related Materials (ECSCRM). September 2016, S. 1–1, doi:10.4028/www.scientific.net/MSF.897.567.
  • Xun Gong, Jan Abraham Ferreira: Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives. In: IEEE Transactions on Power Electronics. Band 29, Nr. 4, April 2014, S. 1757–1767, doi:10.1109/TPEL.2013.2271301.
  • Roland Madar: Materials science: Silicon carbide in contention. In: Nature. 430. Jahrgang, Nr. 7003, 26. August 2004, S. 974–975, doi:10.1038/430974a, PMID 15329702, bibcode:2004Natur.430..974M (englisch).
  • Z. Chen, A.C. Ahyi, X. Zhu, M. Li, T. Isaacs-Smith, J.R. Williams, L.C. Feldman: MOS Characteristics of C-Face 4H-SiC. In: Journal of Electronic Materials. 39. Jahrgang, Nr. 5, 2010, S. 526–529, doi:10.1007/s11664-010-1096-5, bibcode:2010JEMat..39..526C (englisch).
  • Bronwyn R. Frame, Paul R. Drayton, Susan V. Bagnall, Carol J. Lewnau, W. Paul Bullock, H. Martin Wilson, James M. Dunwell, John A. Thompson, Kan Wang: Production of fertile transgenic maize plants by silicon carbide whisker-mediated transformation. In: The Plant Journal. Band 6, Nr. 6, 1994, S. 941–948, doi:10.1046/j.1365-313X.1994.6060941.x.
  • Bronwyn Frame, Hongyi Zhang, Suzy Cocciolone, Lyudmila Sidorenko, Charles Dietrich, Sue Pegg, Shifu Zhen, Patrick Schnable, Kan Wang: Production of transgenic maize from bombarded type II callus: Effect of gold particle size and callus morphology on transformation efficiency. In: In Vitro Cellular & Developmental Biology – Plant. Band 36, Nr. 1, 2000, S. 21–29, doi:10.1007/s11627-000-0007-5.
  • R. Brettschneider, D. Becker, H. Lörz: Efficient transformation of scutellar tissue of immature maize embryos. In: TAG Theoretical and Applied Genetics. Band 94, Nr. 6, 1997, S. 737–748, doi:10.1007/s001220050473.
  • Bronwyn R. Frame, Huixia Shou, Rachel K. Chikwamba, Zhanyuan Zhang, Chengbin Xiang, Tina M. Fonger, Sue Ellen K. Pegg, Baochun Li, Dan S. Nettleton, Deqing Pei, Kan Wang: Agrobacterium tumefaciens-Mediated Transformation of Maize Embryos Using a Standard Binary Vector System. In: Plant Physiology. Band 129, Nr. 1, 2002, S. 13–22, doi:10.1104/pp.000653.

elektronikpraxis.de

esa.int

sci.esa.int

esa.int

europa.eu

ec.europa.eu

echa.europa.eu

google.de

books.google.de

harvard.edu

ui.adsabs.harvard.edu

ieee.org

spectrum.ieee.org

infinite-electronic.de

ioffe.ru

mementoweb.org

timetravel.mementoweb.org

mitsubishielectric.com

nasa.gov

science.nasa.gov

nih.gov

ncbi.nlm.nih.gov

reach-clp-biozid-helpdesk.de

redirecter.toolforge.org

  • Philip G. Neudeck, David J. Spry, Liang-Yu Cheng, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura S. Evans, Roger Meredith, Terry Ferrier, Michael S. Krasowski, Norman F. Prokop: 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500°C. (PDF) In: NASA. NASA GRC, 2008, archiviert vom Original (nicht mehr online verfügbar) am 21. Oktober 2020; abgerufen am 19. Oktober 2020 (englisch).

rohm.com

semikron.com

space-airbusds.com

suva.ch

uni-erlangen.de

tp2.physik.uni-erlangen.de

usgs.gov

pubs.usgs.gov

web.archive.org

  • purdue.edu: History and Status of Silicon Carbide Research (Memento vom 19. Juli 2010 im Internet Archive)
  • P. G. Neudeck, G. M. Beheim, C. S. Salupo: 600 °C Logic Gates Using Silicon Carbide JFET′s. In: Government Microcircuit Applications Conference Technical Digest. Anaheim, März 2000, S. 421–424 (PDF (Memento vom 24. Dezember 2016 im Internet Archive)).
  • Philip G. Neudeck, David J. Spry, Liang-Yu Cheng, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura S. Evans, Roger Meredith, Terry Ferrier, Michael S. Krasowski, Norman F. Prokop: 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500°C. (PDF) In: NASA. NASA GRC, 2008, archiviert vom Original (nicht mehr online verfügbar) am 21. Oktober 2020; abgerufen am 19. Oktober 2020 (englisch).