Hao Li, H.-M. Rein: Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology. In: IEEE Journal of Solid-State Circuits. Band38, Nr.2, 2003, S.184–191, doi:10.1109/JSSC.2002.807404.
Hao Li, H.-M. Rein, T. Suttorp, J. Bock: Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz. In: IEEE Journal of Solid-State Circuits. Band39, Nr.10, 2004, S.1650–1658, doi:10.1109/JSSC.2004.833552.
Chris Auth, Mark Buehler, Annalisa Cappellani, Chi-hing Choi, Gary Ding, Weimin Han, Subhash Joshi,Brian McIntyre, Matt Prince, Pushkar Ranade, Justin Sandford, Christopher Thomas: 45nm High-k+Metal Gate Strain-Enhanced Transistors. In: Intel® Technology Journal. Band12, Nr.01, 2008, S.77–85, doi:10.1109/VLSIT.2008.4588589 (PDF).
W. Chee, S. Maikop, C. Y. Yu: Mobility-enhancement technologies. In: IEEE Circuits Devices Mag. Band21, Nr.3, 2005, S.21–36, doi:10.1109/MCD.2005.1438752.
