Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). «P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. doi:10.1143/jjap.28.l2112. ISSN0021-4922. Bibcode: 1989JaJAP..28L2112A.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). «Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED». Journal of Luminescence (Elsevier BV) 48-49: 666–670. doi:10.1016/0022-2313(91)90215-h. ISSN0022-2313. Bibcode: 1991JLum...48..666A.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). «Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer». Applied Physics Letters (AIP Publishing) 48 (5): 353–355. doi:10.1063/1.96549. ISSN0003-6951. Bibcode: 1986ApPhL..48..353A.
Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo; Hiramatsu, Kazumasa; Sawaki, Nobuhiko (1989). «Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE». Journal of Crystal Growth (Elsevier BV) 98 (1–2): 209–219. doi:10.1016/0022-0248(89)90200-5. ISSN0022-0248.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). «Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy». Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. doi:10.1016/0022-0248(91)90820-u. ISSN0022-0248. Bibcode: 1991JCrGr.115..648M.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). «Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 29 (Part 2, No. 2): L205–L206. doi:10.1143/jjap.29.l205. ISSN0021-4922. Bibcode: 1990JaJAP..29L.205A.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). «Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B): L1517–L1519. doi:10.7567/jjap.34.l1517. ISSN0021-4922. Bibcode: 1995JaJAP..34L1517A.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). «Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. doi:10.1143/jjap.30.1924. ISSN0021-4922. Bibcode: 1991JaJAP..30.1924I.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). «Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 36 (Part 2, No. 4A): L382–L385. doi:10.1143/jjap.36.l382. ISSN0021-4922. Bibcode: 1997JaJAP..36L.382T.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). «Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 39 (Part 1, No. 2A): 413–416. doi:10.1143/jjap.39.413. ISSN0021-4922. Bibcode: 2000JaJAP..39..413T.
Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). «P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. doi:10.1143/jjap.28.l2112. ISSN0021-4922. Bibcode: 1989JaJAP..28L2112A.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). «Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED». Journal of Luminescence (Elsevier BV) 48-49: 666–670. doi:10.1016/0022-2313(91)90215-h. ISSN0022-2313. Bibcode: 1991JLum...48..666A.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). «Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer». Applied Physics Letters (AIP Publishing) 48 (5): 353–355. doi:10.1063/1.96549. ISSN0003-6951. Bibcode: 1986ApPhL..48..353A.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). «Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy». Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. doi:10.1016/0022-0248(91)90820-u. ISSN0022-0248. Bibcode: 1991JCrGr.115..648M.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). «Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 29 (Part 2, No. 2): L205–L206. doi:10.1143/jjap.29.l205. ISSN0021-4922. Bibcode: 1990JaJAP..29L.205A.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). «Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B): L1517–L1519. doi:10.7567/jjap.34.l1517. ISSN0021-4922. Bibcode: 1995JaJAP..34L1517A.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). «Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. doi:10.1143/jjap.30.1924. ISSN0021-4922. Bibcode: 1991JaJAP..30.1924I.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). «Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 36 (Part 2, No. 4A): L382–L385. doi:10.1143/jjap.36.l382. ISSN0021-4922. Bibcode: 1997JaJAP..36L.382T.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). «Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 39 (Part 1, No. 2A): 413–416. doi:10.1143/jjap.39.413. ISSN0021-4922. Bibcode: 2000JaJAP..39..413T.
Amano, Hiroshi; Kito, Masahiro; Hiramatsu, Kazumasa; Akasaki, Isamu (December 20, 1989). «P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 28 (Part 2, No. 12): L2112–L2114. doi:10.1143/jjap.28.l2112. ISSN0021-4922. Bibcode: 1989JaJAP..28L2112A.
Isamu Akasaki; Hiroshi Amano; Masahiro Kito; Kazumasa Hiramatsu (1991). «Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED». Journal of Luminescence (Elsevier BV) 48-49: 666–670. doi:10.1016/0022-2313(91)90215-h. ISSN0022-2313. Bibcode: 1991JLum...48..666A.
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (February 3, 1986). «Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer». Applied Physics Letters (AIP Publishing) 48 (5): 353–355. doi:10.1063/1.96549. ISSN0003-6951. Bibcode: 1986ApPhL..48..353A.
Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo; Hiramatsu, Kazumasa; Sawaki, Nobuhiko (1989). «Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE». Journal of Crystal Growth (Elsevier BV) 98 (1–2): 209–219. doi:10.1016/0022-0248(89)90200-5. ISSN0022-0248.
Murakami, Hiroshi; Asahi, Tsunemori; Amano, Hiroshi; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Akasaki, Isamu (1991). «Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy». Journal of Crystal Growth (Elsevier BV) 115 (1–4): 648–651. doi:10.1016/0022-0248(91)90820-u. ISSN0022-0248. Bibcode: 1991JCrGr.115..648M.
Amano, Hiroshi; Asahi, Tsunemori; Akasaki, Isamu (February 20, 1990). «Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 29 (Part 2, No. 2): L205–L206. doi:10.1143/jjap.29.l205. ISSN0021-4922. Bibcode: 1990JaJAP..29L.205A.
Akasaki, Isamu; Amano, Hiroshi; Sota, Shigetoshi; Sakai, Hiromitsu; Tanaka, Toshiyuki; Koike, Masayoshi (November 1, 1995). «Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 34 (11B): L1517–L1519. doi:10.7567/jjap.34.l1517. ISSN0021-4922. Bibcode: 1995JaJAP..34L1517A.
Itoh, Kenji; Kawamoto, Takeshi; Amano, Hiroshi; Hiramatsu, Kazumasa; Akasaki, Isamu (September 15, 1991). «Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 30 (Part 1, No. 9A): 1924–1927. doi:10.1143/jjap.30.1924. ISSN0021-4922. Bibcode: 1991JaJAP..30.1924I.
Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki; Komori, Miho; Takeuchi, Hideo; Amano, Hiroshi; Akasaki, Isamu (April 1, 1997). «Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 36 (Part 2, No. 4A): L382–L385. doi:10.1143/jjap.36.l382. ISSN0021-4922. Bibcode: 1997JaJAP..36L.382T.
Takeuchi, Tetsuya; Amano, Hiroshi; Akasaki, Isamu (February 15, 2000). «Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells». Japanese Journal of Applied Physics (Japan Society of Applied Physics) 39 (Part 1, No. 2A): 413–416. doi:10.1143/jjap.39.413. ISSN0021-4922. Bibcode: 2000JaJAP..39..413T.