Shahidi, Ghavam G.; Antoniadis, D. A.; Smith, H. I. (December 1988). "Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's". IEEE Transactions on Electron Devices. 35 (12): 2430–. Bibcode:1988ITED...35.2430S. doi:10.1109/16.8835.
Shahidi, Ghavam G.; Antoniadis, D. A.; Smith, H. I. (December 1988). "Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's". IEEE Transactions on Electron Devices. 35 (12): 2430–. Bibcode:1988ITED...35.2430S. doi:10.1109/16.8835.