Broers, A. N. (1965). "Combined electron and ion beam processes for microelectronics". Microelectronics Reliability. 4: 103–104. doi:10.1016/0026-2714(65)90267-2.
Broers, A. N. (1969). "Some experimental and estimated characteristics of the lanthanum hexaboride rod cathode electron gun". Journal of Physics E: Scientific Instruments. 2 (3): 273–276. Bibcode:1969JPhE....2..273B. doi:10.1088/0022-3735/2/3/310.
Broers, A. N.; Harper, J. M. E.; Molzen, W. W. (1978). "250-Å linewidths with PMMA electron resist". Applied Physics Letters. 33 (5): 392. doi:10.1063/1.90387.
Broers, A. N. (1988). "Resolution limits for electron-beam lithography". IBM Journal of Research and Development. 32 (4): 502–513. doi:10.1147/rd.324.0502.
Sedgwick, T. O.; Broers, A. N.; Agule, B. J. (1972). "A Novel Method for Fabrication of Ultrafine Metal Lines by Electron Beams". Journal of the Electrochemical Society. 119 (12): 1769. Bibcode:1972JElS..119.1769S. doi:10.1149/1.2404096.
Broers, A. N.; Molzen, W. W.; Cuomo, J. J.; Wittels, N. D. (1976). "Electron-beam fabrication of 80-Å metal structures". Applied Physics Letters. 29 (9): 596. doi:10.1063/1.89155.
Molzen, W. W. (1979). "Materials and techniques used in nanostructure fabrication". Journal of Vacuum Science and Technology. 16 (2): 269–272. Bibcode:1979JVST...16..269M. doi:10.1116/1.569924.
Allee, D. R.; Broers, A. N. (1990). "Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layer". Applied Physics Letters. 57 (21): 2271. Bibcode:1990ApPhL..57.2271A. doi:10.1063/1.103909.
Van Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (4): 1203–1208. Bibcode:1993JVSTB..11.1203V. doi:10.1116/1.586921.
Broers, A. N. (1969). "Some experimental and estimated characteristics of the lanthanum hexaboride rod cathode electron gun". Journal of Physics E: Scientific Instruments. 2 (3): 273–276. Bibcode:1969JPhE....2..273B. doi:10.1088/0022-3735/2/3/310.
Sedgwick, T. O.; Broers, A. N.; Agule, B. J. (1972). "A Novel Method for Fabrication of Ultrafine Metal Lines by Electron Beams". Journal of the Electrochemical Society. 119 (12): 1769. Bibcode:1972JElS..119.1769S. doi:10.1149/1.2404096.
Molzen, W. W. (1979). "Materials and techniques used in nanostructure fabrication". Journal of Vacuum Science and Technology. 16 (2): 269–272. Bibcode:1979JVST...16..269M. doi:10.1116/1.569924.
Allee, D. R.; Broers, A. N. (1990). "Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layer". Applied Physics Letters. 57 (21): 2271. Bibcode:1990ApPhL..57.2271A. doi:10.1063/1.103909.
Van Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (4): 1203–1208. Bibcode:1993JVSTB..11.1203V. doi:10.1116/1.586921.