Alec Broers, Baron Broers (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Alec Broers, Baron Broers" in English language version.

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  • Voss, R. F.; Laibowitz, R. B.; Broers, A. N. (1980). "Niobium nanobridge dc SQUID". Applied Physics Letters. 37 (7): 656. Bibcode:1980ApPhL..37..656V. doi:10.1063/1.92026.
  • Broers, A. N. (1981). "Resolution, overlay, and field size for lithography systems". IEEE Transactions on Electron Devices. 28 (11): 1268–1278. Bibcode:1981ITED...28.1268B. doi:10.1109/T-ED.1981.20599. S2CID 47505859.
  • Broers, A. N. (1965). "Combined electron and ion beam processes for microelectronics". Microelectronics Reliability. 4: 103–104. doi:10.1016/0026-2714(65)90267-2.
  • Broers, A. N. (1967). "Electron Gun using Long-Life Lanthanum Hexaboride Cathode". Journal of Applied Physics. 38 (4): 1991–1992. Bibcode:1967JAP....38.1991B. doi:10.1063/1.1709807.
  • Broers, A. N. (1969). "Some experimental and estimated characteristics of the lanthanum hexaboride rod cathode electron gun". Journal of Physics E: Scientific Instruments. 2 (3): 273–276. Bibcode:1969JPhE....2..273B. doi:10.1088/0022-3735/2/3/310.
  • Broers, A. N. (1969). "A New High Resolution Reflection Scanning Electron Microscope". Review of Scientific Instruments. 40 (8): 1040–5. Bibcode:1969RScI...40.1040B. doi:10.1063/1.1684146. PMID 5797882.
  • Broers, A. N. (1973). "High-resolution thermionic cathode scanning transmission electron microscope". Applied Physics Letters. 22 (11): 610–612. Bibcode:1973ApPhL..22..610B. doi:10.1063/1.1654527.
  • Broers, A. N.; Panessa, B. J.; Gennaro Jr, J. F. (1975). "High-resolution scanning electron microscopy of bacteriophages 3C and T4". Science. 189 (4203): 637–9. Bibcode:1975Sci...189..637B. doi:10.1126/science.125922. PMID 125922.
  • Trubowitz, S; Broers, A; Pease, R. F. (1970). "Surface ultrastructure of the human marrow--a brief note". Blood. 35 (1): 112–5. doi:10.1182/blood.V35.1.112.112. PMID 5263118.
  • Broers, A. N.; Harper, J. M. E.; Molzen, W. W. (1978). "250-Å linewidths with PMMA electron resist". Applied Physics Letters. 33 (5): 392. doi:10.1063/1.90387.
  • Broers, A. N. (1988). "Resolution limits for electron-beam lithography". IBM Journal of Research and Development. 32 (4): 502–513. doi:10.1147/rd.324.0502.
  • Sedgwick, T. O.; Broers, A. N.; Agule, B. J. (1972). "A Novel Method for Fabrication of Ultrafine Metal Lines by Electron Beams". Journal of the Electrochemical Society. 119 (12): 1769. Bibcode:1972JElS..119.1769S. doi:10.1149/1.2404096.
  • Broers, A. N.; Molzen, W. W.; Cuomo, J. J.; Wittels, N. D. (1976). "Electron-beam fabrication of 80-Å metal structures". Applied Physics Letters. 29 (9): 596. doi:10.1063/1.89155.
  • Molzen, W. W. (1979). "Materials and techniques used in nanostructure fabrication". Journal of Vacuum Science and Technology. 16 (2): 269–272. Bibcode:1979JVST...16..269M. doi:10.1116/1.569924.
  • Feder, R; Spiller, E; Topalian, J; Broers, A. N.; Gudat, W; Panessa, B. J.; Zadunaisky, Z. A.; Sedat, J (1977). "High-resolution soft x-ray microscopy". Science. 197 (4300): 259–60. Bibcode:1977Sci...197..259F. doi:10.1126/science.406670. PMID 406670.
  • Allee, D. R.; Broers, A. N. (1990). "Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layer". Applied Physics Letters. 57 (21): 2271. Bibcode:1990ApPhL..57.2271A. doi:10.1063/1.103909.
  • Van Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (4): 1203–1208. Bibcode:1993JVSTB..11.1203V. doi:10.1116/1.586921.

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ui.adsabs.harvard.edu

  • Voss, R. F.; Laibowitz, R. B.; Broers, A. N. (1980). "Niobium nanobridge dc SQUID". Applied Physics Letters. 37 (7): 656. Bibcode:1980ApPhL..37..656V. doi:10.1063/1.92026.
  • Broers, A. N. (1981). "Resolution, overlay, and field size for lithography systems". IEEE Transactions on Electron Devices. 28 (11): 1268–1278. Bibcode:1981ITED...28.1268B. doi:10.1109/T-ED.1981.20599. S2CID 47505859.
  • Broers, A. N. (1967). "Electron Gun using Long-Life Lanthanum Hexaboride Cathode". Journal of Applied Physics. 38 (4): 1991–1992. Bibcode:1967JAP....38.1991B. doi:10.1063/1.1709807.
  • Broers, A. N. (1969). "Some experimental and estimated characteristics of the lanthanum hexaboride rod cathode electron gun". Journal of Physics E: Scientific Instruments. 2 (3): 273–276. Bibcode:1969JPhE....2..273B. doi:10.1088/0022-3735/2/3/310.
  • Broers, A. N. (1969). "A New High Resolution Reflection Scanning Electron Microscope". Review of Scientific Instruments. 40 (8): 1040–5. Bibcode:1969RScI...40.1040B. doi:10.1063/1.1684146. PMID 5797882.
  • Broers, A. N. (1973). "High-resolution thermionic cathode scanning transmission electron microscope". Applied Physics Letters. 22 (11): 610–612. Bibcode:1973ApPhL..22..610B. doi:10.1063/1.1654527.
  • Broers, A. N.; Panessa, B. J.; Gennaro Jr, J. F. (1975). "High-resolution scanning electron microscopy of bacteriophages 3C and T4". Science. 189 (4203): 637–9. Bibcode:1975Sci...189..637B. doi:10.1126/science.125922. PMID 125922.
  • Sedgwick, T. O.; Broers, A. N.; Agule, B. J. (1972). "A Novel Method for Fabrication of Ultrafine Metal Lines by Electron Beams". Journal of the Electrochemical Society. 119 (12): 1769. Bibcode:1972JElS..119.1769S. doi:10.1149/1.2404096.
  • Molzen, W. W. (1979). "Materials and techniques used in nanostructure fabrication". Journal of Vacuum Science and Technology. 16 (2): 269–272. Bibcode:1979JVST...16..269M. doi:10.1116/1.569924.
  • Feder, R; Spiller, E; Topalian, J; Broers, A. N.; Gudat, W; Panessa, B. J.; Zadunaisky, Z. A.; Sedat, J (1977). "High-resolution soft x-ray microscopy". Science. 197 (4300): 259–60. Bibcode:1977Sci...197..259F. doi:10.1126/science.406670. PMID 406670.
  • Allee, D. R.; Broers, A. N. (1990). "Direct nanometer scale patterning of SiO2 with electron beam irradiation through a sacrificial layer". Applied Physics Letters. 57 (21): 2271. Bibcode:1990ApPhL..57.2271A. doi:10.1063/1.103909.
  • Van Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down to 230 nm". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11 (4): 1203–1208. Bibcode:1993JVSTB..11.1203V. doi:10.1116/1.586921.

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