Puurunen, Riikka L. (15 June 2005). "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process". Journal of Applied Physics. 97 (12): 121301–121301–52. Bibcode:2005JAP....97l1301P. doi:10.1063/1.1940727.
Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L. (14 January 2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2): 021301–021301–101. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
Puurunen, Riikka L. (15 June 2005). "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process". Journal of Applied Physics. 97 (12): 121301–121301–52. Bibcode:2005JAP....97l1301P. doi:10.1063/1.1940727.
Mackus, Adriaan J. M.; Schneider, Joel R.; MacIsaac, Callisto; Baker, Jon G.; Bent, Stacey F. (10 December 2018). "Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review". Chemistry of Materials. 31 (4): 1142–1183. doi:10.1021/acs.chemmater.8b02878. S2CID104385650.
Malygin, Anatolii A.; Drozd, Victor E.; Malkov, Anatolii A.; Smirnov, Vladimir M. (2015). "From V. B. Aleskovskii's "Framework" Hypothesis to the Method of Molecular Layering/Atomic Layer Deposition". Chemical Vapor Deposition. 21 (10–11–12): 216–240. doi:10.1002/cvde.201502013.
Knisley, Thomas J.; Kalutarage, Lakmal C.; Winter, Charles H. (December 2013). "Precursors and chemistry for the atomic layer deposition of metallic first row transition metal films". Coordination Chemistry Reviews. 257 (23–24): 3222–3231. doi:10.1016/j.ccr.2013.03.019.
Knisley, Thomas J.; Ariyasena, Thiloka C.; Sajavaara, Timo; Saly, Mark J.; Winter, Charles H. (25 October 2011). "Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition". Chemistry of Materials. 23 (20): 4417–4419. doi:10.1021/cm202475e. ISSN0897-4756.
Guo, Zheng; Li, Hao; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Xinwei (8 September 2015). "Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma". Chemistry of Materials. 27 (17): 5988–5996. doi:10.1021/acs.chemmater.5b02137. ISSN0897-4756.
Klaus, J.W; Ferro, S.J; George, S.M (February 2000). "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction". Thin Solid Films. 360 (1–2): 145–153. Bibcode:2000TSF...360..145K. doi:10.1016/S0040-6090(99)01076-7.
Seghete, D.; Rayner, G.B.; Cavanagh, A.S.; Anderson, V.R.; George, S.M. (12 April 2011). "Molybdenum Atomic Layer Deposition Using MoF 6 and Si 2 H 6 as the Reactants". Chemistry of Materials. 23 (7): 1668–1678. doi:10.1021/cm101673u. ISSN0897-4756.
Grubbs, R. K.; Steinmetz, N. J.; George, S. M. (2004). "Gas phase reaction products during tungsten atomic layer deposition using WF[sub 6] and Si[sub 2]H[sub 6]". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22 (4): 1811. Bibcode:2004JVSTB..22.1811G. doi:10.1116/1.1767105.
Fabreguette, F.H.; Sechrist, Z.A.; Elam, J.W.; George, S.M. (September 2005). "Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6". Thin Solid Films. 488 (1–2): 103–110. Bibcode:2005TSF...488..103F. doi:10.1016/j.tsf.2005.04.114.
Elam, J.W; Nelson, C.E; Grubbs, R.K; George, S.M (May 2001). "Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition". Surface Science. 479 (1–3): 121–135. Bibcode:2001SurSc.479..121E. doi:10.1016/S0039-6028(01)00969-4.
Kalutarage, Lakmal C.; Martin, Philip D.; Heeg, Mary Jane; Winter, Charles H. (28 August 2013). "Volatile and Thermally Stable Mid to Late Transition Metal Complexes Containing α-Imino Alkoxide Ligands, a New Strongly Reducing Coreagent, and Thermal Atomic Layer Deposition of Ni, Co, Fe, and Cr Metal Films". Journal of the American Chemical Society. 135 (34): 12588–12591. doi:10.1021/ja407014w. ISSN0002-7863. PMID23947400.
Klesko, Joseph P.; Thrush, Christopher M.; Winter, Charles H. (28 July 2015). "Thermal Atomic Layer Deposition of Titanium Films Using Titanium Tetrachloride and 2-Methyl-1,4-bis(trimethylsilyl)-2,5-cyclohexadiene or 1,4-Bis(trimethylsilyl)-1,4-dihydropyrazine". Chemistry of Materials. 27 (14): 4918–4921. doi:10.1021/acs.chemmater.5b01707. ISSN0897-4756.
Stevens, Eric C.; Mousa, Moataz Bellah M.; Parsons, Gregory N. (November 2018). "Thermal atomic layer deposition of Sn metal using SnCl 4 and a vapor phase silyl dihydropyrazine reducing agent". Journal of Vacuum Science & Technology A. 36 (6): 06A106. Bibcode:2018JVSTA..36fA106S. doi:10.1116/1.5055212. ISSN0734-2101. S2CID104844454.
Blakeney, Kyle J.; Winter, Charles H. (27 March 2018). "Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent". Chemistry of Materials. 30 (6): 1844–1848. doi:10.1021/acs.chemmater.8b00445. ISSN0897-4756.
Brown, S.; Howe, J.Y.; Ma, Z.; Et (2008). "Surface Modification of Au/TiO2 Catalysts by SiO2 via Atomic Layer Deposition". The Journal of Physical Chemistry C. 112 (25): 9448–9457. doi:10.1021/jp801484h.
Kim, H. (2003). "Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing". Journal of Vacuum Science and Technology. 21 (6): 2231. Bibcode:2003JVSTB..21.2231K. doi:10.1116/1.1622676.
Mackus, Adriaan J. M.; Garcia-Alonso, Diana; Knoops, Harm C. M.; Bol, Ageeth A.; Kessels, Wilhelmus M. M. (2013). "Room-Temperature Atomic Layer Deposition of Platinum". Chemistry of Materials. 25 (9): 1769–1774. doi:10.1021/cm400274n.
Potts, S.E.; Kessels, W.M.M. (December 2013). "Energy-enhanced atomic layer deposition for more process and precursor versatility". Coordination Chemistry Reviews. 257 (23–24): 3254–3270. doi:10.1016/j.ccr.2013.06.015.
Hirvikorpi, Terhi; Laine, Risto; Vähä-Nissi, Mika; Kilpi, Väinö; Salo, Erkki; Li, Wei-Min; Lindfors, Sven; Vartiainen, Jari; Kenttä, Eija; Nikkola, Juha; Harlin, Ali (January 2014). "Barrier properties of plastic films coated with an Al2O3 layer by roll-to-toll atomic layer deposition". Thin Solid Films. 550: 164–169. Bibcode:2014TSF...550..164H. doi:10.1016/j.tsf.2013.10.148.
Langereis, E.; Heil, S B S.; Knoops, H C M.; Keuning, W.; Van De Sanden, M C M.; Kessels, W M M. (2009). "In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition". Journal of Physics D: Applied Physics. 42 (7): 1–19. doi:10.1088/0022-3727/42/7/073001. S2CID97244909.
Puurunen, Riikka L. (15 June 2005). "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process". Journal of Applied Physics. 97 (12): 121301–121301–52. Bibcode:2005JAP....97l1301P. doi:10.1063/1.1940727.
Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L. (14 January 2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2): 021301–021301–101. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
Puurunen, Riikka L. (15 June 2005). "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process". Journal of Applied Physics. 97 (12): 121301–121301–52. Bibcode:2005JAP....97l1301P. doi:10.1063/1.1940727.
Klaus, J.W; Ferro, S.J; George, S.M (February 2000). "Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction". Thin Solid Films. 360 (1–2): 145–153. Bibcode:2000TSF...360..145K. doi:10.1016/S0040-6090(99)01076-7.
Grubbs, R. K.; Steinmetz, N. J.; George, S. M. (2004). "Gas phase reaction products during tungsten atomic layer deposition using WF[sub 6] and Si[sub 2]H[sub 6]". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22 (4): 1811. Bibcode:2004JVSTB..22.1811G. doi:10.1116/1.1767105.
Fabreguette, F.H.; Sechrist, Z.A.; Elam, J.W.; George, S.M. (September 2005). "Quartz crystal microbalance study of tungsten atomic layer deposition using WF6 and Si2H6". Thin Solid Films. 488 (1–2): 103–110. Bibcode:2005TSF...488..103F. doi:10.1016/j.tsf.2005.04.114.
Elam, J.W; Nelson, C.E; Grubbs, R.K; George, S.M (May 2001). "Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition". Surface Science. 479 (1–3): 121–135. Bibcode:2001SurSc.479..121E. doi:10.1016/S0039-6028(01)00969-4.
Stevens, Eric C.; Mousa, Moataz Bellah M.; Parsons, Gregory N. (November 2018). "Thermal atomic layer deposition of Sn metal using SnCl 4 and a vapor phase silyl dihydropyrazine reducing agent". Journal of Vacuum Science & Technology A. 36 (6): 06A106. Bibcode:2018JVSTA..36fA106S. doi:10.1116/1.5055212. ISSN0734-2101. S2CID104844454.
Kim, H. (2003). "Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing". Journal of Vacuum Science and Technology. 21 (6): 2231. Bibcode:2003JVSTB..21.2231K. doi:10.1116/1.1622676.
Kalutarage, Lakmal C.; Martin, Philip D.; Heeg, Mary Jane; Winter, Charles H. (28 August 2013). "Volatile and Thermally Stable Mid to Late Transition Metal Complexes Containing α-Imino Alkoxide Ligands, a New Strongly Reducing Coreagent, and Thermal Atomic Layer Deposition of Ni, Co, Fe, and Cr Metal Films". Journal of the American Chemical Society. 135 (34): 12588–12591. doi:10.1021/ja407014w. ISSN0002-7863. PMID23947400.
Mackus, Adriaan J. M.; Schneider, Joel R.; MacIsaac, Callisto; Baker, Jon G.; Bent, Stacey F. (10 December 2018). "Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review". Chemistry of Materials. 31 (4): 1142–1183. doi:10.1021/acs.chemmater.8b02878. S2CID104385650.
Stevens, Eric C.; Mousa, Moataz Bellah M.; Parsons, Gregory N. (November 2018). "Thermal atomic layer deposition of Sn metal using SnCl 4 and a vapor phase silyl dihydropyrazine reducing agent". Journal of Vacuum Science & Technology A. 36 (6): 06A106. Bibcode:2018JVSTA..36fA106S. doi:10.1116/1.5055212. ISSN0734-2101. S2CID104844454.
Langereis, E.; Heil, S B S.; Knoops, H C M.; Keuning, W.; Van De Sanden, M C M.; Kessels, W M M. (2009). "In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition". Journal of Physics D: Applied Physics. 42 (7): 1–19. doi:10.1088/0022-3727/42/7/073001. S2CID97244909.
si.edu
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Matas, Brian; de Suberbasaux, Christian (1997). "Ch. 7. DRAM Technology"(PDF). Memory, 1997: Complete Coverage of DRAM, Sram, EPROM, and Flash Memory IC's. Scottsdale, AZ, USA: Integrated Circuit Engineering Corp. ISBN978-1877750595.
Haynes, William M., ed. (2011). CRC handbook of chemistry and physics : a ready-reference book of chemical and physical data (92nd ed.). Boca Raton, FL.: CRC Press. ISBN9781439855119. OCLC730008390.
Knisley, Thomas J.; Ariyasena, Thiloka C.; Sajavaara, Timo; Saly, Mark J.; Winter, Charles H. (25 October 2011). "Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition". Chemistry of Materials. 23 (20): 4417–4419. doi:10.1021/cm202475e. ISSN0897-4756.
Guo, Zheng; Li, Hao; Chen, Qiang; Sang, Lijun; Yang, Lizhen; Liu, Zhongwei; Wang, Xinwei (8 September 2015). "Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma". Chemistry of Materials. 27 (17): 5988–5996. doi:10.1021/acs.chemmater.5b02137. ISSN0897-4756.
Seghete, D.; Rayner, G.B.; Cavanagh, A.S.; Anderson, V.R.; George, S.M. (12 April 2011). "Molybdenum Atomic Layer Deposition Using MoF 6 and Si 2 H 6 as the Reactants". Chemistry of Materials. 23 (7): 1668–1678. doi:10.1021/cm101673u. ISSN0897-4756.
Kalutarage, Lakmal C.; Martin, Philip D.; Heeg, Mary Jane; Winter, Charles H. (28 August 2013). "Volatile and Thermally Stable Mid to Late Transition Metal Complexes Containing α-Imino Alkoxide Ligands, a New Strongly Reducing Coreagent, and Thermal Atomic Layer Deposition of Ni, Co, Fe, and Cr Metal Films". Journal of the American Chemical Society. 135 (34): 12588–12591. doi:10.1021/ja407014w. ISSN0002-7863. PMID23947400.
Klesko, Joseph P.; Thrush, Christopher M.; Winter, Charles H. (28 July 2015). "Thermal Atomic Layer Deposition of Titanium Films Using Titanium Tetrachloride and 2-Methyl-1,4-bis(trimethylsilyl)-2,5-cyclohexadiene or 1,4-Bis(trimethylsilyl)-1,4-dihydropyrazine". Chemistry of Materials. 27 (14): 4918–4921. doi:10.1021/acs.chemmater.5b01707. ISSN0897-4756.
Stevens, Eric C.; Mousa, Moataz Bellah M.; Parsons, Gregory N. (November 2018). "Thermal atomic layer deposition of Sn metal using SnCl 4 and a vapor phase silyl dihydropyrazine reducing agent". Journal of Vacuum Science & Technology A. 36 (6): 06A106. Bibcode:2018JVSTA..36fA106S. doi:10.1116/1.5055212. ISSN0734-2101. S2CID104844454.
Blakeney, Kyle J.; Winter, Charles H. (27 March 2018). "Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent". Chemistry of Materials. 30 (6): 1844–1848. doi:10.1021/acs.chemmater.8b00445. ISSN0897-4756.