Bipolar junction transistor (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Bipolar junction transistor" in English language version.

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  • "1947: Invention of the Point-Contact Transistor". Computer History Museum. Retrieved August 10, 2016.
  • "1948: Conception of the Junction Transistor". Computer History Museum. Retrieved August 10, 2016.
  • "1960: Epitaxial Deposition Process Enhances Transistor Performance". Computer History Museum. Retrieved June 22, 2023.

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  • High Speed Switching Transistor Handbook (2nd ed.). Motorola. 1963. p. 17.[1].

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  • Maupin, J.T. (1957). "The tetrode power transistor". IRE Transactions on Electron Devices. 4 (1): 1–5. Bibcode:1957ITED....4....1M. doi:10.1109/T-ED.1957.14192. S2CID 51668235.
  • Brar, B.; Sullivan, G.J.; Asbeck, P.M. (2001). "Herb's bipolar transistors". IEEE Transactions on Electron Devices. 48 (11): 2473–2476. Bibcode:2001ITED...48.2473B. doi:10.1109/16.960370.
  • Bullis, W.M.; Runyan, W.R. (1967). "Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices". IEEE Transactions on Electron Devices. 14 (2): 75–81. Bibcode:1967ITED...14...75B. doi:10.1109/T-ED.1967.15902.
  • General Electric (1962). Transistor Manual (6th ed.). p. 12. Bibcode:1964trma.book.....C. "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by means of the positive charge (hole concentration) in the base region. ... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in 4th and 5th editions).

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