Brar, B.; Sullivan, G.J.; Asbeck, P.M. (2001). "Herb's bipolar transistors". IEEE Transactions on Electron Devices. 48 (11): 2473–2476. Bibcode:2001ITED...48.2473B. doi:10.1109/16.960370.
Bullis, W.M.; Runyan, W.R. (1967). "Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices". IEEE Transactions on Electron Devices. 14 (2): 75–81. Bibcode:1967ITED...14...75B. doi:10.1109/T-ED.1967.15902.
Gummel, H. K.; Poon, H. C. (1970). "An Integral Charge Control Model of Bipolar Transistors". Bell System Technical Journal. 49 (5): 827–852. doi:10.1002/j.1538-7305.1970.tb01803.x.
High Speed Switching Transistor Handbook (2nd ed.). Motorola. 1963. p. 17.[1].
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General Electric (1962). Transistor Manual (6th ed.). p. 12. Bibcode:1964trma.book.....C. "If the principle of space charge neutrality is used in the analysis of the transistor, it is evident that the collector current is controlled by means of the positive charge (hole concentration) in the base region. ... When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region..." (same in 4th and 5th editions).
Brar, B.; Sullivan, G.J.; Asbeck, P.M. (2001). "Herb's bipolar transistors". IEEE Transactions on Electron Devices. 48 (11): 2473–2476. Bibcode:2001ITED...48.2473B. doi:10.1109/16.960370.
Bullis, W.M.; Runyan, W.R. (1967). "Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices". IEEE Transactions on Electron Devices. 14 (2): 75–81. Bibcode:1967ITED...14...75B. doi:10.1109/T-ED.1967.15902.