Charge carrier density (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Charge carrier density" in English language version.

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O. Madelung, U. Rössler, M. Schulz (2002). "Germanium (Ge), intrinsic carrier concentration". Group IV Elements, IV-IV and III-V Compounds. Part b – Electronic, Transport, Optical and Other Properties. Landolt-Börnstein – Group III Condensed Matter. pp. 1–3. doi:10.1007/10832182_503. ISBN 978-3-540-42876-3.{{cite book}}: CS1 maint: multiple names: authors list (link)
Pietro P. Altermatt, Andreas Schenk, Frank Geelhaar, Gernot Heiser (2003). "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing". Journal of Applied Physics. 93 (3): 1598. Bibcode:2003JAP....93.1598A. doi:10.1063/1.1529297.{{cite journal}}: CS1 maint: multiple names: authors list (link)
Rössler, U. (2002). "Gallium arsenide (GaAs), intrinsic carrier concentration, electrical and thermal conductivity". Group IV Elements, IV-IV and III-V Compounds. Part b – Electronic, Transport, Optical and Other Properties. Landolt-Börnstein – Group III Condensed Matter. pp. 1–8. doi:10.1007/10832182_196. ISBN 978-3-540-42876-3.
Gachovska, Tanya K.; Hudgins, Jerry L. (2018). "SiC and GaN Power Semiconductor Devices". Power Electronics Handbook. Elsevier. p. 98. doi:10.1016/b978-0-12-811407-0.00005-2. ISBN 9780128114070.
Edwin Hall (1879). "On a New Action of the Magnet on Electric Currents". American Journal of Mathematics. 2 (3): 287–92. doi:10.2307/2369245. JSTOR 2369245. S2CID 107500183. Archived from the original on 27 July 2011.

Pietro P. Altermatt, Andreas Schenk, Frank Geelhaar, Gernot Heiser (2003). "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing". Journal of Applied Physics. 93 (3): 1598. Bibcode:2003JAP....93.1598A. doi:10.1063/1.1529297.{{cite journal}}: CS1 maint: multiple names: authors list (link)