Czochralski method (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Czochralski method" in English language version.

refsWebsite

Global rank English rank

9doi.org

2^nd place

8harvard.edu

18^th place

17^th place

2web.archive.org

1^st place

2semanticscholar.org

11^th place

8^th place

2books.google.com

3^rd place

1hathitrust.org

441^st place

311^th place

1thefirstnews.com

low place

7,523^rd place

1powerelectronicsnews.com

low place

1arxiv.org

69^th place

59^th place

1iucr.org

low place

9,593^rd place

1h2g2.com

9,126^th place

7,821^st place

1crylink.com

low place

1sciencedirect.com

149^th place

178^th place

1worldcat.org

5^th place

1gia.edu

low place

6,351^st place

1nih.gov

4^th place

1electronicsweekly.com

low place

1unt.edu

1,336^th place

769^th place

1osti.gov

2,036^th place

1,254^th place

1handle.net

102^nd place

76^th place

1psu.edu

207^th place

136^th place

1tno.nl

low place

arxiv.org (Global: 69^th place; English: 59^th place)

Son, JK (2020-05-14). "Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP". Journal of Instrumentation. 15 (7) C07035. arXiv:2005.06797. Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035. S2CID 218630318.

books.google.com (Global: 3^rd place; English: 3^rd place)

Springer Handbook of Electronic and Photonic Materials. Springer. 4 October 2017. ISBN 978-3-319-48933-9.
Springer Handbook of Electronic and Photonic Materials. Springer. 4 October 2017. ISBN 978-3-319-48933-9.

crylink.com (Global: low place; English: low place)

"Popular Methods Of Growing Artificial Gemstones _BBO Crystal_Nd YAG Crystal_Nd YVO4 Crystal_Pockels Cells-Crylink". 2024-04-26. Retrieved 2025-03-09.

doi.org (Global: 2^nd place; English: 2^nd place)

J. Czochralski (1918). "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle [A new method for the measurement of the crystallization rate of metals]". Zeitschrift für Physikalische Chemie. 92: 219–221. doi:10.1515/zpch-1918-9212.
Son, JK (2020-05-14). "Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP". Journal of Instrumentation. 15 (7) C07035. arXiv:2005.06797. Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035. S2CID 218630318.
Uecker, R. (2014). "The historical development of the Czochralski method". Journal of Crystal Growth. 401: 7–24. Bibcode:2014JCrGr.401....7U. doi:10.1016/j.jcrysgro.2013.11.095.
Razeghi, M. (2017-12-01). "A lifetime of contributions to the world of semiconductors using the Czochralski invention". Vacuum. 146: 308–328. Bibcode:2017Vacuu.146..308R. doi:10.1016/j.vacuum.2017.01.009. ISSN 0042-207X.
Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A.; et al. (2002). "Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals". Ann. N.Y. Acad. Sci. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012. S2CID 2212684.
Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). "Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors". IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360. OSTI 10160548.
Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, G.M; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, T.J; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, M.J; Creanza, D; et al. (2001). "Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466 (2): 308. Bibcode:2001NIMPA.466..308L. doi:10.1016/S0168-9002(01)00560-5. hdl:11568/67464.
Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). "Particle detectors made of high-resistivity Czochralski silicon". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366. doi:10.1016/j.nima.2005.01.057.
Custer, J. S.; Polman, A.; Van Pinxteren, H. M. (1994). "Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon". Journal of Applied Physics. 75 (6): 2809. Bibcode:1994JAP....75.2809C. doi:10.1063/1.356173.

electronicsweekly.com (Global: low place; English: low place)

Manners, David (2013-12-30). "Doubts over 450mm and EUV". Electronics Weekly. Retrieved 2014-01-09.

gia.edu (Global: low place; English: 6,351^st place)

Weldon, Robert. "An Introduction to Synthetic Gem Materials". Gemological Institute of America. Retrieved 9 March 2025.

h2g2.com (Global: 9,126^th place; English: 7,821^st place)

"Czochralski Crystal Growth Method". 30 January 2003. Archived from the original on 2016-08-17.

handle.net (Global: 102^nd place; English: 76^th place)

hdl.handle.net

Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, G.M; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, T.J; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, M.J; Creanza, D; et al. (2001). "Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466 (2): 308. Bibcode:2001NIMPA.466..308L. doi:10.1016/S0168-9002(01)00560-5. hdl:11568/67464.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Son, JK (2020-05-14). "Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP". Journal of Instrumentation. 15 (7) C07035. arXiv:2005.06797. Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035. S2CID 218630318.
Uecker, R. (2014). "The historical development of the Czochralski method". Journal of Crystal Growth. 401: 7–24. Bibcode:2014JCrGr.401....7U. doi:10.1016/j.jcrysgro.2013.11.095.
Razeghi, M. (2017-12-01). "A lifetime of contributions to the world of semiconductors using the Czochralski invention". Vacuum. 146: 308–328. Bibcode:2017Vacuu.146..308R. doi:10.1016/j.vacuum.2017.01.009. ISSN 0042-207X.
Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A.; et al. (2002). "Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals". Ann. N.Y. Acad. Sci. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012. S2CID 2212684.
Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). "Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors". IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360. OSTI 10160548.
Lindström, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, M.M; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, G.M; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, T.J; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, M.J; Creanza, D; et al. (2001). "Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 466 (2): 308. Bibcode:2001NIMPA.466..308L. doi:10.1016/S0168-9002(01)00560-5. hdl:11568/67464.
Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). "Particle detectors made of high-resistivity Czochralski silicon". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366. doi:10.1016/j.nima.2005.01.057.
Custer, J. S.; Polman, A.; Van Pinxteren, H. M. (1994). "Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon". Journal of Applied Physics. 75 (6): 2809. Bibcode:1994JAP....75.2809C. doi:10.1063/1.356173.

hathitrust.org (Global: 441^st place; English: 311^th place)

babel.hathitrust.org

J. Czochralski (1918). "Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle [A new method for the measurement of the crystallization rate of metals]". Zeitschrift für Physikalische Chemie. 92: 219–221. doi:10.1515/zpch-1918-9212.

iucr.org (Global: low place; English: 9,593^rd place)

"Who was Jan Czochralski? Out of the shadows". www.iucr.org. Retrieved 2025-03-10.

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A.; et al. (2002). "Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals". Ann. N.Y. Acad. Sci. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012. S2CID 2212684.

osti.gov (Global: 2,036^th place; English: 1,254^th place)

Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). "Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors". IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360. OSTI 10160548.

powerelectronicsnews.com (Global: low place; English: low place)

"The Road to 200-mm SiC Production". 14 June 2022.

psu.edu (Global: 207^th place; English: 136^th place)

citeseerx.ist.psu.edu

Harkonen, J; Tuovinen, E; Luukka, P; Tuominen, E; Li, Z; Ivanov, A; Verbitskaya, E; Eremin, V; Pirojenko, A; Riihimaki, I.; Virtanen, A. (2005). "Particle detectors made of high-resistivity Czochralski silicon". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 541 (1–2): 202–207. Bibcode:2005NIMPA.541..202H. CiteSeerX 10.1.1.506.2366. doi:10.1016/j.nima.2005.01.057.

sciencedirect.com (Global: 149^th place; English: 178^th place)

Razeghi, M. (2017-12-01). "A lifetime of contributions to the world of semiconductors using the Czochralski invention". Vacuum. 146: 308–328. Bibcode:2017Vacuu.146..308R. doi:10.1016/j.vacuum.2017.01.009. ISSN 0042-207X.

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

Son, JK (2020-05-14). "Growth and development of pure Li2MoO4 crystals for rare event experiment at CUP". Journal of Instrumentation. 15 (7) C07035. arXiv:2005.06797. Bibcode:2020JInst..15C7035S. doi:10.1088/1748-0221/15/07/C07035. S2CID 218630318.
Aleksic, Jalena; Zielke, Paul; Szymczyk, Janusz A.; et al. (2002). "Temperature and Flow Visualization in a Simulation of the Czochralski Process Using Temperature-Sensitive Liquid Crystals". Ann. N.Y. Acad. Sci. 972 (1): 158–163. Bibcode:2002NYASA.972..158A. doi:10.1111/j.1749-6632.2002.tb04567.x. PMID 12496012. S2CID 2212684.

thefirstnews.com (Global: low place; English: 7,523^rd place)

Stuart Dowell. "Scientist who laid the foundations for Silicon Valley honoured at long last". thefirstnews.com. Archived from the original on 13 July 2023. Retrieved 3 May 2023.

tno.nl (Global: low place; English: low place)

publications.tno.nl

Eikelboom, J.A.; Jansen, M.J. (2000), "Characterisation of PV modules of new generations; results of tests and simulations" (PDF), Report ECN-C-00-067, 18

unt.edu (Global: 1,336^th place; English: 769^th place)

digital.library.unt.edu

Li, Z.; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rattaggi, M.; Rancoita, P.G.; Rubinelli, F.A.; Fonash, S.J.; et al. (1992). "Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors". IEEE Transactions on Nuclear Science. 39 (6): 1730. Bibcode:1992ITNS...39.1730L. doi:10.1109/23.211360. OSTI 10160548.

web.archive.org (Global: 1^st place; English: 1^st place)

Stuart Dowell. "Scientist who laid the foundations for Silicon Valley honoured at long last". thefirstnews.com. Archived from the original on 13 July 2023. Retrieved 3 May 2023.
"Czochralski Crystal Growth Method". 30 January 2003. Archived from the original on 2016-08-17.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Razeghi, M. (2017-12-01). "A lifetime of contributions to the world of semiconductors using the Czochralski invention". Vacuum. 146: 308–328. Bibcode:2017Vacuu.146..308R. doi:10.1016/j.vacuum.2017.01.009. ISSN 0042-207X.

Czochralski method (English Wikipedia)

arxiv.org (Global: 69th place; English: 59th place)

books.google.com (Global: 3rd place; English: 3rd place)

crylink.com (Global: low place; English: low place)

doi.org (Global: 2nd place; English: 2nd place)

electronicsweekly.com (Global: low place; English: low place)

gia.edu (Global: low place; English: 6,351st place)

h2g2.com (Global: 9,126th place; English: 7,821st place)

handle.net (Global: 102nd place; English: 76th place)

hdl.handle.net

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

hathitrust.org (Global: 441st place; English: 311th place)

babel.hathitrust.org

iucr.org (Global: low place; English: 9,593rd place)

nih.gov (Global: 4th place; English: 4th place)

pubmed.ncbi.nlm.nih.gov

osti.gov (Global: 2,036th place; English: 1,254th place)

powerelectronicsnews.com (Global: low place; English: low place)

psu.edu (Global: 207th place; English: 136th place)

citeseerx.ist.psu.edu

sciencedirect.com (Global: 149th place; English: 178th place)

semanticscholar.org (Global: 11th place; English: 8th place)

api.semanticscholar.org

thefirstnews.com (Global: low place; English: 7,523rd place)

tno.nl (Global: low place; English: low place)

publications.tno.nl

unt.edu (Global: 1,336th place; English: 769th place)

digital.library.unt.edu

web.archive.org (Global: 1st place; English: 1st place)

worldcat.org (Global: 5th place; English: 5th place)

search.worldcat.org

arxiv.org (Global: 69^th place; English: 59^th place)

books.google.com (Global: 3^rd place; English: 3^rd place)

doi.org (Global: 2^nd place; English: 2^nd place)

gia.edu (Global: low place; English: 6,351^st place)

h2g2.com (Global: 9,126^th place; English: 7,821^st place)

handle.net (Global: 102^nd place; English: 76^th place)

harvard.edu (Global: 18^th place; English: 17^th place)

hathitrust.org (Global: 441^st place; English: 311^th place)

iucr.org (Global: low place; English: 9,593^rd place)

nih.gov (Global: 4^th place; English: 4^th place)

osti.gov (Global: 2,036^th place; English: 1,254^th place)

psu.edu (Global: 207^th place; English: 136^th place)

sciencedirect.com (Global: 149^th place; English: 178^th place)

semanticscholar.org (Global: 11^th place; English: 8^th place)

thefirstnews.com (Global: low place; English: 7,523^rd place)

unt.edu (Global: 1,336^th place; English: 769^th place)

web.archive.org (Global: 1^st place; English: 1^st place)

worldcat.org (Global: 5^th place; English: 5^th place)