Dangling bond (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Dangling bond" in English language version.

refsWebsite

Global rank English rank

17doi.org

2^nd place

13harvard.edu

18^th place

17^th place

12worldcat.org

5^th place

6nih.gov

4^th place

3semanticscholar.org

11^th place

8^th place

1aps.org

1,503^rd place

1,378^th place

1scitation.org

4,352^nd place

3,229^th place

aps.org

link.aps.org

Vardeny, Z.; Tauc, J. (1985-04-22). "Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds". Physical Review Letters. 54 (16): 1844–1847. Bibcode:1985PhRvL..54.1844V. doi:10.1103/PhysRevLett.54.1844. PMID 10031155.

doi.org

Vardeny, Z.; Tauc, J. (1985-04-22). "Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds". Physical Review Letters. 54 (16): 1844–1847. Bibcode:1985PhRvL..54.1844V. doi:10.1103/PhysRevLett.54.1844. PMID 10031155.
Petit, J.; Lannoo, M.; Allan, G. (1986-12-01). "Calculation of the optical properties of the isolated dangling bond in silicon". Solid State Communications. 60 (11): 861–865. Bibcode:1986SSCom..60..861P. doi:10.1016/0038-1098(86)90823-9. ISSN 0038-1098.
Biegelsen DK, Stutzmann M (December 1985). "29Si hyperfine measurements in a-Si:H". Journal of Non-Crystalline Solids. 77–78: 703–706. Bibcode:1985JNCS...77..703B. doi:10.1016/0022-3093(85)90755-0.
Xu K, Li X, Chen P, Zhou D, Wu C, Guo Y, et al. (January 2015). "Hydrogen dangling bonds induce ferromagnetism in two-dimensional metal-free graphitic-C₃N₄ nanosheets". Chemical Science. 6 (1): 283–287. doi:10.1039/C4SC02576H. PMC 5435869. PMID 28580096.
Ma YW, Lu YH, Yi JB, Feng YP, Herng TS, Liu X, et al. (March 2012). "Room temperature ferromagnetism in Teflon due to carbon dangling bonds". Nature Communications. 3 (1): 727. Bibcode:2012NatCo...3..727M. doi:10.1038/ncomms1689. PMID 22395618.
Assmann, J.; Mönch, W. (1980-09-01). "Optical properties of dangling-bond states at cleaved silicon surfaces". Surface Science. 99 (1): 34–44. Bibcode:1980SurSc..99...34A. doi:10.1016/0039-6028(80)90574-9. ISSN 0039-6028.
Dersch H, Stuke J, Beichler J (1981-03-15). "Light-induced dangling bonds in hydrogenated amorphous silicon". Applied Physics Letters. 38 (6): 456–458. Bibcode:1981ApPhL..38..456D. doi:10.1063/1.92402. ISSN 0003-6951.
Pankove JI, Wu CP, Magee CW, McGinn JT (September 1980). "Laser annealing of hydrogenated amorphous silicon". Journal of Electronic Materials. 9 (5): 905–912. Bibcode:1980JEMat...9..905P. doi:10.1007/BF02822725. ISSN 0361-5235. S2CID 93272408.
Smith ZE, Wagner S (October 1985). "Intrinsic dangling-bond density in hydrogenated amorphous silicon". Physical Review B. 32 (8): 5510–5513. Bibcode:1985PhRvB..32.5510S. doi:10.1103/PhysRevB.32.5510. PMID 9937788.
Haneman D (1974-01-01). "Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces". Japanese Journal of Applied Physics. 13 (S2): 371. Bibcode:1974JJAPS..13..371H. doi:10.7567/JJAPS.2S2.371. ISSN 0021-4922. S2CID 98799174.
Lemke B, Haneman D (1978-02-15). "Dangling bonds on silicon". Physical Review B. 17 (4): 1893–1907. Bibcode:1978PhRvB..17.1893L. doi:10.1103/PhysRevB.17.1893. ISSN 0163-1829.
Tao, Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P. (2003-03-10). "Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium". Applied Physics Letters. 82 (10): 1559–1561. Bibcode:2003ApPhL..82.1559T. doi:10.1063/1.1559418. ISSN 0003-6951.
Tutsch, Leonard; Feldmann, Frank; Polzin, Jana; Luderer, Christoph; Bivour, Martin; Moldovan, Anamaria; Rentsch, Jochen; Hermle, Martin (2019). "Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts". Solar Energy Materials and Solar Cells. 200. Elsevier BV: 109960. doi:10.1016/j.solmat.2019.109960. ISSN 0927-0248.
Bonilla, Ruy S.; Hoex, Bram; Hamer, Phillip; Wilshaw, Peter R. (2017-06-12). "Dielectric surface passivation for silicon solar cells: A review". Physica Status Solidi A. 214 (7). Wiley: 1700293. Bibcode:2017PSSAR.21400293B. doi:10.1002/pssa.201700293. ISSN 1862-6300.
Qu Y, Wang L, Li Z, Li P, Zhang Q, Lin Y, et al. (November 2019). "Ambient Synthesis of Single-Atom Catalysts from Bulk Metal via Trapping of Atoms by Surface Dangling Bonds". Advanced Materials. 31 (44): e1904496. Bibcode:2019AdM....3104496Q. doi:10.1002/adma.201904496. PMID 31512296. S2CID 202562115.

dx.doi.org

Petit, J.; Lannoo, M.; Allan, G. (1986-12-01). "Calculation of the optical properties of the isolated dangling bond in silicon". Solid State Communications. 60 (11): 861–865. Bibcode:1986SSCom..60..861P. doi:10.1016/0038-1098(86)90823-9. ISSN 0038-1098.
Assmann, J.; Mönch, W. (1980-09-01). "Optical properties of dangling-bond states at cleaved silicon surfaces". Surface Science. 99 (1): 34–44. Bibcode:1980SurSc..99...34A. doi:10.1016/0039-6028(80)90574-9. ISSN 0039-6028.

harvard.edu

ui.adsabs.harvard.edu

Vardeny, Z.; Tauc, J. (1985-04-22). "Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds". Physical Review Letters. 54 (16): 1844–1847. Bibcode:1985PhRvL..54.1844V. doi:10.1103/PhysRevLett.54.1844. PMID 10031155.
Petit, J.; Lannoo, M.; Allan, G. (1986-12-01). "Calculation of the optical properties of the isolated dangling bond in silicon". Solid State Communications. 60 (11): 861–865. Bibcode:1986SSCom..60..861P. doi:10.1016/0038-1098(86)90823-9. ISSN 0038-1098.
Biegelsen DK, Stutzmann M (December 1985). "29Si hyperfine measurements in a-Si:H". Journal of Non-Crystalline Solids. 77–78: 703–706. Bibcode:1985JNCS...77..703B. doi:10.1016/0022-3093(85)90755-0.
Ma YW, Lu YH, Yi JB, Feng YP, Herng TS, Liu X, et al. (March 2012). "Room temperature ferromagnetism in Teflon due to carbon dangling bonds". Nature Communications. 3 (1): 727. Bibcode:2012NatCo...3..727M. doi:10.1038/ncomms1689. PMID 22395618.
Assmann, J.; Mönch, W. (1980-09-01). "Optical properties of dangling-bond states at cleaved silicon surfaces". Surface Science. 99 (1): 34–44. Bibcode:1980SurSc..99...34A. doi:10.1016/0039-6028(80)90574-9. ISSN 0039-6028.
Dersch H, Stuke J, Beichler J (1981-03-15). "Light-induced dangling bonds in hydrogenated amorphous silicon". Applied Physics Letters. 38 (6): 456–458. Bibcode:1981ApPhL..38..456D. doi:10.1063/1.92402. ISSN 0003-6951.
Pankove JI, Wu CP, Magee CW, McGinn JT (September 1980). "Laser annealing of hydrogenated amorphous silicon". Journal of Electronic Materials. 9 (5): 905–912. Bibcode:1980JEMat...9..905P. doi:10.1007/BF02822725. ISSN 0361-5235. S2CID 93272408.
Smith ZE, Wagner S (October 1985). "Intrinsic dangling-bond density in hydrogenated amorphous silicon". Physical Review B. 32 (8): 5510–5513. Bibcode:1985PhRvB..32.5510S. doi:10.1103/PhysRevB.32.5510. PMID 9937788.
Haneman D (1974-01-01). "Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces". Japanese Journal of Applied Physics. 13 (S2): 371. Bibcode:1974JJAPS..13..371H. doi:10.7567/JJAPS.2S2.371. ISSN 0021-4922. S2CID 98799174.
Lemke B, Haneman D (1978-02-15). "Dangling bonds on silicon". Physical Review B. 17 (4): 1893–1907. Bibcode:1978PhRvB..17.1893L. doi:10.1103/PhysRevB.17.1893. ISSN 0163-1829.
Tao, Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P. (2003-03-10). "Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium". Applied Physics Letters. 82 (10): 1559–1561. Bibcode:2003ApPhL..82.1559T. doi:10.1063/1.1559418. ISSN 0003-6951.
Bonilla, Ruy S.; Hoex, Bram; Hamer, Phillip; Wilshaw, Peter R. (2017-06-12). "Dielectric surface passivation for silicon solar cells: A review". Physica Status Solidi A. 214 (7). Wiley: 1700293. Bibcode:2017PSSAR.21400293B. doi:10.1002/pssa.201700293. ISSN 1862-6300.
Qu Y, Wang L, Li Z, Li P, Zhang Q, Lin Y, et al. (November 2019). "Ambient Synthesis of Single-Atom Catalysts from Bulk Metal via Trapping of Atoms by Surface Dangling Bonds". Advanced Materials. 31 (44): e1904496. Bibcode:2019AdM....3104496Q. doi:10.1002/adma.201904496. PMID 31512296. S2CID 202562115.

nih.gov

pubmed.ncbi.nlm.nih.gov

Vardeny, Z.; Tauc, J. (1985-04-22). "Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds". Physical Review Letters. 54 (16): 1844–1847. Bibcode:1985PhRvL..54.1844V. doi:10.1103/PhysRevLett.54.1844. PMID 10031155.
Xu K, Li X, Chen P, Zhou D, Wu C, Guo Y, et al. (January 2015). "Hydrogen dangling bonds induce ferromagnetism in two-dimensional metal-free graphitic-C₃N₄ nanosheets". Chemical Science. 6 (1): 283–287. doi:10.1039/C4SC02576H. PMC 5435869. PMID 28580096.
Ma YW, Lu YH, Yi JB, Feng YP, Herng TS, Liu X, et al. (March 2012). "Room temperature ferromagnetism in Teflon due to carbon dangling bonds". Nature Communications. 3 (1): 727. Bibcode:2012NatCo...3..727M. doi:10.1038/ncomms1689. PMID 22395618.
Smith ZE, Wagner S (October 1985). "Intrinsic dangling-bond density in hydrogenated amorphous silicon". Physical Review B. 32 (8): 5510–5513. Bibcode:1985PhRvB..32.5510S. doi:10.1103/PhysRevB.32.5510. PMID 9937788.
Qu Y, Wang L, Li Z, Li P, Zhang Q, Lin Y, et al. (November 2019). "Ambient Synthesis of Single-Atom Catalysts from Bulk Metal via Trapping of Atoms by Surface Dangling Bonds". Advanced Materials. 31 (44): e1904496. Bibcode:2019AdM....3104496Q. doi:10.1002/adma.201904496. PMID 31512296. S2CID 202562115.

ncbi.nlm.nih.gov

Xu K, Li X, Chen P, Zhou D, Wu C, Guo Y, et al. (January 2015). "Hydrogen dangling bonds induce ferromagnetism in two-dimensional metal-free graphitic-C₃N₄ nanosheets". Chemical Science. 6 (1): 283–287. doi:10.1039/C4SC02576H. PMC 5435869. PMID 28580096.

scitation.org

aip.scitation.org

Tao, Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P. (2003-03-10). "Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium". Applied Physics Letters. 82 (10): 1559–1561. Bibcode:2003ApPhL..82.1559T. doi:10.1063/1.1559418. ISSN 0003-6951.

semanticscholar.org

api.semanticscholar.org

Pankove JI, Wu CP, Magee CW, McGinn JT (September 1980). "Laser annealing of hydrogenated amorphous silicon". Journal of Electronic Materials. 9 (5): 905–912. Bibcode:1980JEMat...9..905P. doi:10.1007/BF02822725. ISSN 0361-5235. S2CID 93272408.
Haneman D (1974-01-01). "Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces". Japanese Journal of Applied Physics. 13 (S2): 371. Bibcode:1974JJAPS..13..371H. doi:10.7567/JJAPS.2S2.371. ISSN 0021-4922. S2CID 98799174.
Qu Y, Wang L, Li Z, Li P, Zhang Q, Lin Y, et al. (November 2019). "Ambient Synthesis of Single-Atom Catalysts from Bulk Metal via Trapping of Atoms by Surface Dangling Bonds". Advanced Materials. 31 (44): e1904496. Bibcode:2019AdM....3104496Q. doi:10.1002/adma.201904496. PMID 31512296. S2CID 202562115.

worldcat.org

search.worldcat.org

Petit, J.; Lannoo, M.; Allan, G. (1986-12-01). "Calculation of the optical properties of the isolated dangling bond in silicon". Solid State Communications. 60 (11): 861–865. Bibcode:1986SSCom..60..861P. doi:10.1016/0038-1098(86)90823-9. ISSN 0038-1098.
Assmann, J.; Mönch, W. (1980-09-01). "Optical properties of dangling-bond states at cleaved silicon surfaces". Surface Science. 99 (1): 34–44. Bibcode:1980SurSc..99...34A. doi:10.1016/0039-6028(80)90574-9. ISSN 0039-6028.
Dersch H, Stuke J, Beichler J (1981-03-15). "Light-induced dangling bonds in hydrogenated amorphous silicon". Applied Physics Letters. 38 (6): 456–458. Bibcode:1981ApPhL..38..456D. doi:10.1063/1.92402. ISSN 0003-6951.
Pankove JI, Wu CP, Magee CW, McGinn JT (September 1980). "Laser annealing of hydrogenated amorphous silicon". Journal of Electronic Materials. 9 (5): 905–912. Bibcode:1980JEMat...9..905P. doi:10.1007/BF02822725. ISSN 0361-5235. S2CID 93272408.
Haneman D (1974-01-01). "Review of Electron Paramagnetic Resonance Investigations of Semiconductor Surfaces". Japanese Journal of Applied Physics. 13 (S2): 371. Bibcode:1974JJAPS..13..371H. doi:10.7567/JJAPS.2S2.371. ISSN 0021-4922. S2CID 98799174.
Lemke B, Haneman D (1978-02-15). "Dangling bonds on silicon". Physical Review B. 17 (4): 1893–1907. Bibcode:1978PhRvB..17.1893L. doi:10.1103/PhysRevB.17.1893. ISSN 0163-1829.
Masel, Richard I. (1996). Principles of adsorption and reaction on solid surfaces. New York. p. 198. ISBN 0-471-30392-5. OCLC 32429536.{{cite book}}: CS1 maint: location missing publisher (link)
Tao, Meng; Udeshi, Darshak; Basit, Nasir; Maldonado, Eduardo; Kirk, Wiley P. (2003-03-10). "Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium". Applied Physics Letters. 82 (10): 1559–1561. Bibcode:2003ApPhL..82.1559T. doi:10.1063/1.1559418. ISSN 0003-6951.
Smets, Arno H. M.; Jäger, Klaus; Isabella, Olindo; Swaaij, René ACMM van; Zeman, Miro (2016). Solar energy : the physics and engineering of photovoltaic conversion, technologies and systems. Cambridge, England. ISBN 978-1-906860-32-5. OCLC 944318061.{{cite book}}: CS1 maint: location missing publisher (link)
Tutsch, Leonard; Feldmann, Frank; Polzin, Jana; Luderer, Christoph; Bivour, Martin; Moldovan, Anamaria; Rentsch, Jochen; Hermle, Martin (2019). "Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts". Solar Energy Materials and Solar Cells. 200. Elsevier BV: 109960. doi:10.1016/j.solmat.2019.109960. ISSN 0927-0248.
Bonilla, Ruy S.; Hoex, Bram; Hamer, Phillip; Wilshaw, Peter R. (2017-06-12). "Dielectric surface passivation for silicon solar cells: A review". Physica Status Solidi A. 214 (7). Wiley: 1700293. Bibcode:2017PSSAR.21400293B. doi:10.1002/pssa.201700293. ISSN 1862-6300.

worldcat.org

Masel, Richard I. (1996). Principles of adsorption and reaction on solid surfaces. New York. p. 198. ISBN 0-471-30392-5. OCLC 32429536.{{cite book}}: CS1 maint: location missing publisher (link)