Deal–Grove model (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Deal–Grove model" in English language version.

refsWebsite

Global rank English rank

3doi.org

2^nd place

2harvard.edu

18^th place

17^th place

1berkeley.edu

580^th place

462^nd place

1worldcat.org

5^th place

1nih.gov

4^th place

1semanticscholar.org

11^th place

8^th place

1researchgate.net

120^th place

125^th place

1arxiv.org

69^th place

59^th place

1tuwien.ac.at

low place

arxiv.org (Global: 69^th place; English: 59^th place)

Liu, M.; Peng, J.; et al. (2016). "Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires". Theoretical and Applied Mechanics Letters. 6 (5): 195–199. arXiv:1911.08908. doi:10.1016/j.taml.2016.08.002.

berkeley.edu (Global: 580^th place; English: 462^nd place)

optoelectronics.eecs.berkeley.edu

Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.

doi.org (Global: 2^nd place; English: 2^nd place)

Deal, B. E.; A. S. Grove (December 1965). "General Relationship for the Thermal Oxidation of Silicon". Journal of Applied Physics. 36 (12): 3770–3778. Bibcode:1965JAP....36.3770D. doi:10.1063/1.1713945.
Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.
Liu, M.; Peng, J.; et al. (2016). "Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires". Theoretical and Applied Mechanics Letters. 6 (5): 195–199. arXiv:1911.08908. doi:10.1016/j.taml.2016.08.002.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Deal, B. E.; A. S. Grove (December 1965). "General Relationship for the Thermal Oxidation of Silicon". Journal of Applied Physics. 36 (12): 3770–3778. Bibcode:1965JAP....36.3770D. doi:10.1063/1.1713945.
Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.

researchgate.net (Global: 120^th place; English: 125^th place)

Liu, M.; Peng, J.; et al. (2016). "Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires". Theoretical and Applied Mechanics Letters. 6 (5): 195–199. arXiv:1911.08908. doi:10.1016/j.taml.2016.08.002.

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.

tuwien.ac.at (Global: low place; English: low place)

iue.tuwien.ac.at

"2.6 The Deal-Grove Model". www.iue.tuwien.ac.at. Retrieved 2025-01-27.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Yablonovitch, E. (20 October 1989). "The Chemistry of Solid-State Electronics" (PDF). Science. 246 (4928): 347–351. Bibcode:1989Sci...246..347Y. doi:10.1126/science.246.4928.347. ISSN 0036-8075. PMID 17747917. S2CID 17572922. Beginning in the mid-1950s, Atalla et al. began work on the thermal oxidation of Si. The oxidation recipe was gradually perfected by Deal, Grove, and many others.

Deal–Grove model (English Wikipedia)

arxiv.org (Global: 69th place; English: 59th place)

berkeley.edu (Global: 580th place; English: 462nd place)