Debye length (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Debye length" in English language version.

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See Brydges, David C.; Martin, Ph. A. (1999). "Coulomb Systems at Low Density: A Review". Journal of Statistical Physics. 96 (5/6): 1163–1330. arXiv:cond-mat/9904122. Bibcode:1999JSP....96.1163B. doi:10.1023/A:1004600603161. S2CID 54979869.

See Brydges, David C.; Martin, Ph. A. (1999). "Coulomb Systems at Low Density: A Review". Journal of Statistical Physics. 96 (5/6): 1163–1330. arXiv:cond-mat/9904122. Bibcode:1999JSP....96.1163B. doi:10.1023/A:1004600603161. S2CID 54979869.
Stern, Eric; Robin Wagner; Fred J. Sigworth; Ronald Breaker; Tarek M. Fahmy; Mark A. Reed (2007-11-01). "Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors". Nano Letters. 7 (11): 3405–3409. Bibcode:2007NanoL...7.3405S. doi:10.1021/nl071792z. PMC 2713684. PMID 17914853.
Guo, Lingjie; Effendi Leobandung; Stephen Y. Chou (199). "A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel". Applied Physics Letters. 70 (7): 850. Bibcode:1997ApPhL..70..850G. doi:10.1063/1.118236.
Tiwari, Sandip; Farhan Rana; Kevin Chan; Leathen Shi; Hussein Hanafi (1996). "Single charge and confinement effects in nano-crystal memories". Applied Physics Letters. 69 (9): 1232. Bibcode:1996ApPhL..69.1232T. doi:10.1063/1.117421.

See Brydges, David C.; Martin, Ph. A. (1999). "Coulomb Systems at Low Density: A Review". Journal of Statistical Physics. 96 (5/6): 1163–1330. arXiv:cond-mat/9904122. Bibcode:1999JSP....96.1163B. doi:10.1023/A:1004600603161. S2CID 54979869.
Stern, Eric; Robin Wagner; Fred J. Sigworth; Ronald Breaker; Tarek M. Fahmy; Mark A. Reed (2007-11-01). "Importance of the Debye Screening Length on Nanowire Field Effect Transistor Sensors". Nano Letters. 7 (11): 3405–3409. Bibcode:2007NanoL...7.3405S. doi:10.1021/nl071792z. PMC 2713684. PMID 17914853.
Guo, Lingjie; Effendi Leobandung; Stephen Y. Chou (199). "A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel". Applied Physics Letters. 70 (7): 850. Bibcode:1997ApPhL..70..850G. doi:10.1063/1.118236.
Tiwari, Sandip; Farhan Rana; Kevin Chan; Leathen Shi; Hussein Hanafi (1996). "Single charge and confinement effects in nano-crystal memories". Applied Physics Letters. 69 (9): 1232. Bibcode:1996ApPhL..69.1232T. doi:10.1063/1.117421.

See Brydges, David C.; Martin, Ph. A. (1999). "Coulomb Systems at Low Density: A Review". Journal of Statistical Physics. 96 (5/6): 1163–1330. arXiv:cond-mat/9904122. Bibcode:1999JSP....96.1163B. doi:10.1023/A:1004600603161. S2CID 54979869.

Debye, P.; Hückel, E. (2019) [1923]. "Zur Theorie der Elektrolyte. I. Gefrierpunktserniedrigung und verwandte Erscheinungen" [The theory of electrolytes. I. Freezing point depression and related phenomenon]. Physikalische Zeitschrift. 24 (9). Translated by Braus, Michael J.: 185–206.