Dynamic random-access memory (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Dynamic random-access memory" in English language version.

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  • EDO (Hyper Page Mode) (PDF) (Applications Note). IBM. 6 June 1996. Archived from the original (PDF) on 2021-12-02. a new address can be provided for the next access cycle before completing the current cycle. Consequently, the CAS pulse width can be shorter and the cycle time decreased dramatically.

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  • F. Morishita; et al. (21 September 2005). "A capacitorless twin-transistor random access memory (TTRAM) on SOI". Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005. Vol. Custom Integrated Circuits Conference 2005. pp. 428–431. doi:10.1109/CICC.2005.1568699. ISBN 978-0-7803-9023-2. S2CID 14952912.

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  • Lin, Albert (20 December 1999). "Memory Grades, the Most Confusing Subject". Simmtester.com. CST, Inc. Archived from the original on 2020-08-12. Retrieved 1 November 2017. So for the same –60 part, EDO DRAM is about 30% faster than FPM DRAM in peak data rate.

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  • Z80 CPU (PDF) (User Manual). 2016. p. 3. UM008011-0816.