Electrochemical RAM (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Electrochemical RAM" in English language version.

refsWebsite

Global rank English rank

13doi.org

2^nd place

10nih.gov

4^th place

8semanticscholar.org

11^th place

8^th place

5harvard.edu

18^th place

17^th place

2worldcat.org

5^th place

1researchgate.net

120^th place

125^th place

1ethz.ch

2,224^th place

1,900^th place

1wiley.com

222^nd place

297^th place

1nature.com

234^th place

397^th place

1science.org

1,160^th place

737^th place

1osti.gov

2,036^th place

1,254^th place

doi.org (Global: 2^nd place; English: 2^nd place)

Shi, J.; Ha, S. D.; Zhou, Y.; Schoofs, F.; Ramanathan, S. (2013). "A correlated nickelate synaptic transistor". Nature Communications. 4: 2676. Bibcode:2013NatCo...4.2676S. doi:10.1038/ncomms3676. PMID 24177330.
Tang, Jianshi; Bishop, Douglas; Kim, Seyoung; Copel, Matt; Gokmen, Tayfun; Todorov, Teodor; Shin, SangHoon; Lee, Ko-Tao; Solomon, Paul (2018-12-01). "ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551. ISBN 978-1-7281-1987-8. S2CID 58674536. Retrieved 2020-07-16.
Kim, S. (2019). "Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator". 2019 IEEE International Electron Devices Meeting (IEDM). pp. 35.7.1–4. doi:10.1109/IEDM19573.2019.8993463. ISBN 978-1-7281-4032-2. S2CID 211211273.
Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.
Tang, J. (2018). "ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551. ISBN 978-1-7281-1987-8. S2CID 58674536.
Fuller, E.J.; Keene, S.T.; Melianas, A.; Wang, Z.; Agarwal, S.; Li, Y.; Tuchman, Y.; James, C.D.; Marinella, M.J.; Yang, J.J.; Salleo, A.; Talin, A.A. (2019). "Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing". Science. 364 (6440): 570–4. Bibcode:2019Sci...364..570F. doi:10.1126/science.aaw5581. PMID 31023890. S2CID 133605392.
Tayfun, G.; Yurii, V. (2016). "Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations". Frontiers in Neuroscience. 10: 333. doi:10.3389/fnins.2016.00333. PMC 4954855. PMID 27493624.
Tayfun, G.; Haensch, H. (2020). "Algorithm for Training Neural Networks on Resistive Device Arrays". Frontiers in Neuroscience. 14: 103. doi:10.3389/fnins.2020.00103. PMC 7054461. PMID 32174807.
Sharbati, M.T.; Du, Y.; Torres, J.; Ardolino, N.D.; Yun, M.; Xiong, F. (2018). "Artificial Synapses: Low-Power, Electrochemically Tunable Graphene Synapses for Neuromorphic Computing". Adv. Mater. 30 1870273. doi:10.1002/adma.201870273.
Yang, C.-S.; Shang, D.-S.; Liu, N.; Fuller, E.J.; Agrawal, S.; Alec Talin, A.; Li, Y.-Q.; Shen, B.-G.; Sun, Y. (2018). "All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing". Adv. Funct. Mater. 28 (42) 1804170. doi:10.1002/adfm.201804170. OSTI 1472248. S2CID 104934211.
Yao, X.; Klyukin, K.; Lu, W. (2020). "Protonic solid-state electrochemical synapse for physical neural networks". Nat Commun. 11 (1): 3134. Bibcode:2020NatCo..11.3134Y. doi:10.1038/s41467-020-16866-6. PMC 7371700. PMID 32561717.
Yang, J.-T.; Ge, C.; Du, J.-Y.; Huang, H.-Y.; He, M.; Wang, C.; Lu, H.-B.; Yang, G.-Z.; Jin, K.-J. (2018). "Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor". Adv. Mater. 30 (34) 1801548. Bibcode:2018AdM....3001548Y. doi:10.1002/adma.201801548. PMID 29974526. S2CID 49655665.
Melianas, Armantas; Kang, Min-A; VahidMohammadi, Armin; Quill, Tyler James; Tian, Weiqian; Gogotsi, Yury; Salleo, Alberto; Hamedi, Mahiar Max (March 2022). "High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene". Advanced Functional Materials. 32 (12) 2109970. doi:10.1002/adfm.202109970. ISSN 1616-301X. S2CID 244484634.

ethz.ch (Global: 2,224^th place; English: 1,900^th place)

iis-projects.ee.ethz.ch

"Finite element modeling of electrochemical random access memory - iis-projects". iis-projects.ee.ethz.ch. Zürich, Switzerland: ETH Zurich. Retrieved 2020-07-16.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Shi, J.; Ha, S. D.; Zhou, Y.; Schoofs, F.; Ramanathan, S. (2013). "A correlated nickelate synaptic transistor". Nature Communications. 4: 2676. Bibcode:2013NatCo...4.2676S. doi:10.1038/ncomms3676. PMID 24177330.
Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.
Fuller, E.J.; Keene, S.T.; Melianas, A.; Wang, Z.; Agarwal, S.; Li, Y.; Tuchman, Y.; James, C.D.; Marinella, M.J.; Yang, J.J.; Salleo, A.; Talin, A.A. (2019). "Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing". Science. 364 (6440): 570–4. Bibcode:2019Sci...364..570F. doi:10.1126/science.aaw5581. PMID 31023890. S2CID 133605392.
Yao, X.; Klyukin, K.; Lu, W. (2020). "Protonic solid-state electrochemical synapse for physical neural networks". Nat Commun. 11 (1): 3134. Bibcode:2020NatCo..11.3134Y. doi:10.1038/s41467-020-16866-6. PMC 7371700. PMID 32561717.
Yang, J.-T.; Ge, C.; Du, J.-Y.; Huang, H.-Y.; He, M.; Wang, C.; Lu, H.-B.; Yang, G.-Z.; Jin, K.-J. (2018). "Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor". Adv. Mater. 30 (34) 1801548. Bibcode:2018AdM....3001548Y. doi:10.1002/adma.201801548. PMID 29974526. S2CID 49655665.

nature.com (Global: 234^th place; English: 397^th place)

Y. van de Burgt et al., Nature Electronics, 1, 386 (2018)

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Shi, J.; Ha, S. D.; Zhou, Y.; Schoofs, F.; Ramanathan, S. (2013). "A correlated nickelate synaptic transistor". Nature Communications. 4: 2676. Bibcode:2013NatCo...4.2676S. doi:10.1038/ncomms3676. PMID 24177330.
Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.
Fuller, E.J.; Keene, S.T.; Melianas, A.; Wang, Z.; Agarwal, S.; Li, Y.; Tuchman, Y.; James, C.D.; Marinella, M.J.; Yang, J.J.; Salleo, A.; Talin, A.A. (2019). "Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing". Science. 364 (6440): 570–4. Bibcode:2019Sci...364..570F. doi:10.1126/science.aaw5581. PMID 31023890. S2CID 133605392.
Tayfun, G.; Yurii, V. (2016). "Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations". Frontiers in Neuroscience. 10: 333. doi:10.3389/fnins.2016.00333. PMC 4954855. PMID 27493624.
Tayfun, G.; Haensch, H. (2020). "Algorithm for Training Neural Networks on Resistive Device Arrays". Frontiers in Neuroscience. 14: 103. doi:10.3389/fnins.2020.00103. PMC 7054461. PMID 32174807.
Yao, X.; Klyukin, K.; Lu, W. (2020). "Protonic solid-state electrochemical synapse for physical neural networks". Nat Commun. 11 (1): 3134. Bibcode:2020NatCo..11.3134Y. doi:10.1038/s41467-020-16866-6. PMC 7371700. PMID 32561717.
Yang, J.-T.; Ge, C.; Du, J.-Y.; Huang, H.-Y.; He, M.; Wang, C.; Lu, H.-B.; Yang, G.-Z.; Jin, K.-J. (2018). "Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor". Adv. Mater. 30 (34) 1801548. Bibcode:2018AdM....3001548Y. doi:10.1002/adma.201801548. PMID 29974526. S2CID 49655665.

ncbi.nlm.nih.gov

Tayfun, G.; Yurii, V. (2016). "Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations". Frontiers in Neuroscience. 10: 333. doi:10.3389/fnins.2016.00333. PMC 4954855. PMID 27493624.
Tayfun, G.; Haensch, H. (2020). "Algorithm for Training Neural Networks on Resistive Device Arrays". Frontiers in Neuroscience. 14: 103. doi:10.3389/fnins.2020.00103. PMC 7054461. PMID 32174807.
Yao, X.; Klyukin, K.; Lu, W. (2020). "Protonic solid-state electrochemical synapse for physical neural networks". Nat Commun. 11 (1): 3134. Bibcode:2020NatCo..11.3134Y. doi:10.1038/s41467-020-16866-6. PMC 7371700. PMID 32561717.

osti.gov (Global: 2,036^th place; English: 1,254^th place)

Yang, C.-S.; Shang, D.-S.; Liu, N.; Fuller, E.J.; Agrawal, S.; Alec Talin, A.; Li, Y.-Q.; Shen, B.-G.; Sun, Y. (2018). "All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing". Adv. Funct. Mater. 28 (42) 1804170. doi:10.1002/adfm.201804170. OSTI 1472248. S2CID 104934211.

researchgate.net (Global: 120^th place; English: 125^th place)

Tang, Jianshi; Bishop, Douglas; Kim, Seyoung; Copel, Matt; Gokmen, Tayfun; Todorov, Teodor; Shin, SangHoon; Lee, Ko-Tao; Solomon, Paul (2018-12-01). "ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551. ISBN 978-1-7281-1987-8. S2CID 58674536. Retrieved 2020-07-16.

science.org (Global: 1,160^th place; English: 737^th place)

Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

Tang, Jianshi; Bishop, Douglas; Kim, Seyoung; Copel, Matt; Gokmen, Tayfun; Todorov, Teodor; Shin, SangHoon; Lee, Ko-Tao; Solomon, Paul (2018-12-01). "ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551. ISBN 978-1-7281-1987-8. S2CID 58674536. Retrieved 2020-07-16.
Kim, S. (2019). "Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator". 2019 IEEE International Electron Devices Meeting (IEDM). pp. 35.7.1–4. doi:10.1109/IEDM19573.2019.8993463. ISBN 978-1-7281-4032-2. S2CID 211211273.
Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.
Tang, J. (2018). "ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing". 2018 IEEE International Electron Devices Meeting (IEDM). pp. 13.1.1–4. doi:10.1109/IEDM.2018.8614551. ISBN 978-1-7281-1987-8. S2CID 58674536.
Fuller, E.J.; Keene, S.T.; Melianas, A.; Wang, Z.; Agarwal, S.; Li, Y.; Tuchman, Y.; James, C.D.; Marinella, M.J.; Yang, J.J.; Salleo, A.; Talin, A.A. (2019). "Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing". Science. 364 (6440): 570–4. Bibcode:2019Sci...364..570F. doi:10.1126/science.aaw5581. PMID 31023890. S2CID 133605392.
Yang, C.-S.; Shang, D.-S.; Liu, N.; Fuller, E.J.; Agrawal, S.; Alec Talin, A.; Li, Y.-Q.; Shen, B.-G.; Sun, Y. (2018). "All-Solid-State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing". Adv. Funct. Mater. 28 (42) 1804170. doi:10.1002/adfm.201804170. OSTI 1472248. S2CID 104934211.
Yang, J.-T.; Ge, C.; Du, J.-Y.; Huang, H.-Y.; He, M.; Wang, C.; Lu, H.-B.; Yang, G.-Z.; Jin, K.-J. (2018). "Artificial Synapses Emulated by an Electrolyte-Gated Tungsten-Oxide Transistor". Adv. Mater. 30 (34) 1801548. Bibcode:2018AdM....3001548Y. doi:10.1002/adma.201801548. PMID 29974526. S2CID 49655665.
Melianas, Armantas; Kang, Min-A; VahidMohammadi, Armin; Quill, Tyler James; Tian, Weiqian; Gogotsi, Yury; Salleo, Alberto; Hamedi, Mahiar Max (March 2022). "High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene". Advanced Functional Materials. 32 (12) 2109970. doi:10.1002/adfm.202109970. ISSN 1616-301X. S2CID 244484634.

wiley.com (Global: 222^nd place; English: 297^th place)

onlinelibrary.wiley.com

'E. J. Fuller et al., Adv. Mater., 29, 1604310 (2017)

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Onen, Murat; Emond, Nicolas; Wang, Baoming; Zhang, Difei; Ross, Frances M.; Li, Ju; Yildiz, Bilge; del Alamo, Jesús A. (29 July 2022). "Nanosecond protonic programmable resistors for analog deep learning". Science. 377 (6605): 539–543. Bibcode:2022Sci...377..539O. doi:10.1126/science.abp8064. ISSN 0036-8075. PMID 35901152. S2CID 251159631.
Melianas, Armantas; Kang, Min-A; VahidMohammadi, Armin; Quill, Tyler James; Tian, Weiqian; Gogotsi, Yury; Salleo, Alberto; Hamedi, Mahiar Max (March 2022). "High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene". Advanced Functional Materials. 32 (12) 2109970. doi:10.1002/adfm.202109970. ISSN 1616-301X. S2CID 244484634.

Electrochemical RAM (English Wikipedia)

doi.org (Global: 2nd place; English: 2nd place)

ethz.ch (Global: 2,224th place; English: 1,900th place)

iis-projects.ee.ethz.ch

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

nature.com (Global: 234th place; English: 397th place)

nih.gov (Global: 4th place; English: 4th place)