Ferroelectric RAM (English Wikipedia)

"FRAM converges with video game". EDN. Vol. 39, no. 5–8. 1994. p. 14. In the highest-volume usage yet for nonvolatile ferroelectric RAMs (FRAMs), video-game maker Sega has shipped several million copies of its new game, "Sonic the Hedgehog III," which incorporates FRAMS from Ramtron International Corp to save a game between sessions.
Scott, J.F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Application. Springer. pp. 583-600 (584-5, 597). ISBN 978-94-007-1019-1.

computerhistory.org

"FRAM technology". Cypress semiconductos.
"CY15B116QI Data Sheet". Cypress Semiconductors. p. 19.
"FRAM - Magnetic field Immunity". Cypress Semiconductors.
"F-RAM™ Technology Brief". Cypress Semiconductors. June 2016. 001-88042 Rev. *B. Archived from the original on 2019-01-11.
"FRAM Data sheets". Cypress Semiconductors.
"FRAM". Cypress Semiconductors.
"Energy comparison between FRAM and EEPROM". Cypress Semiconductors.

Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–44. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.
Spanier, J.E.; Kolpak, A.M.; Urban, J.J.; Grinberg, I.; Ouyang, L.; Yun, W.S.; Rappe, A.M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–9. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.
Junquera, J.; Ghosez, P. (2003). "Critical thickness for ferroelectricity in perovskite ultrathin films". Nature. 422 (6931): 506–9. Bibcode:2003Natur.422..506J. doi:10.1038/nature01501. PMID 12673246.
Lee, Dong-Jae; Seok, Yong-Sik; Choi, Do-Chan; Lee, Jae-Hyeong; Kim, Young-Rae; Kim, Hyeun-Su; Jun, Dong-Soo; Kwon, Oh-Hyun (1 June 1992). "A 35 ns 64 Mb DRAM using on-chip boosted power supply". 1992 Symposium on VLSI Circuits Digest of Technical Papers. pp. 64–65. doi:10.1109/VLSIC.1992.229238. ISBN 978-0-7803-0701-8. S2CID 62372447 – via IEEE Xplore.

Wong, William G. (March 21, 2018). "Unleashing MRAM as Persistent Memory". Electronic Design.

"Memory FRAM 4 M Bit (512 K × 8) MB85R4001A" (PDF). Fujitsu Semiconductor Data Sheet. Fujitsu Semiconductor. 2013. DS501-00005-3v0-E.

Buck, Dudley A. (June 1952). Ferroelectrics for Digital Information Storage and Switching (Technical report). MIT. hdl:1721.3/40244. R-212.
Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–44. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.

Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–44. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.
Spanier, J.E.; Kolpak, A.M.; Urban, J.J.; Grinberg, I.; Ouyang, L.; Yun, W.S.; Rappe, A.M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–9. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.
Junquera, J.; Ghosez, P. (2003). "Critical thickness for ferroelectricity in perovskite ultrathin films". Nature. 422 (6931): 506–9. Bibcode:2003Natur.422..506J. doi:10.1038/nature01501. PMID 12673246.

Bondurant, David (June 2020). "Non-Volatile RAM for the Internet of Things (IOT)" (PDF). IEEE Pikes Peak Section.

AG, Infineon Technologies. "F-RAM (Ferroelectric RAM) - Infineon Technologies". www.infineon.com. Retrieved 2021-12-18.

Ridenour, Louis N. (June 1955). "Computer Memories". Scientific American: 92. Archived from the original on 2016-08-22. Retrieved 2016-08-22.

Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–44. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.
Spanier, J.E.; Kolpak, A.M.; Urban, J.J.; Grinberg, I.; Ouyang, L.; Yun, W.S.; Rappe, A.M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–9. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.
Junquera, J.; Ghosez, P. (2003). "Critical thickness for ferroelectricity in perovskite ultrathin films". Nature. 422 (6931): 506–9. Bibcode:2003Natur.422..506J. doi:10.1038/nature01501. PMID 12673246.

Lee, Dong-Jae; Seok, Yong-Sik; Choi, Do-Chan; Lee, Jae-Hyeong; Kim, Young-Rae; Kim, Hyeun-Su; Jun, Dong-Soo; Kwon, Oh-Hyun (1 June 1992). "A 35 ns 64 Mb DRAM using on-chip boosted power supply". 1992 Symposium on VLSI Circuits Digest of Technical Papers. pp. 64–65. doi:10.1109/VLSIC.1992.229238. ISBN 978-0-7803-0701-8. S2CID 62372447 – via IEEE Xplore.

"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.

"User Manual: Single phase, single rate, Credit Meter". Ampy Automation Ltd. The FRAM is guaranteed for a minimum of 10,000,000,000 write cycles.

Spanier, J.E.; Kolpak, A.M.; Urban, J.J.; Grinberg, I.; Ouyang, L.; Yun, W.S.; Rappe, A.M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–9. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.

Ridenour, Louis N. (June 1955). "Computer Memories". Scientific American: 92. Archived from the original on 2016-08-22. Retrieved 2016-08-22.
"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.
"Cypress Semiconductor completes Ramtron acquisition". Denver Business Journal. 21 November 2012. Archived from the original on 2012-11-30.
"TN-47-16: Designing for High-Density DDR2 Memory" (PDF). Archived from the original (PDF) on September 20, 2006.
"F-RAM™ Technology Brief". Cypress Semiconductors. June 2016. 001-88042 Rev. *B. Archived from the original on 2019-01-11.