Ferroelectric RAM (English Wikipedia)

Silva, José P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Bégon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi (2023-08-01). "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices". APL Materials. 11 (8) 089201. Bibcode:2023APLM...11h9201S. doi:10.1063/5.0148068. hdl:10261/341290. ISSN 2166-532X.

bizjournals.com (Global: 396^th place; English: 190^th place)

"Cypress Semiconductor completes Ramtron acquisition". Denver Business Journal. 21 November 2012. Archived from the original on 2012-11-30.

books.google.com (Global: 3^rd place; English: 3^rd place)

"FRAM converges with video game". EDN. Vol. 39, no. 5–8. 1994. p. 14. In the highest-volume usage yet for nonvolatile ferroelectric RAMs (FRAMs), video-game maker Sega has shipped several million copies of its new game, "Sonic the Hedgehog III," which incorporates FRAMS from Ramtron International Corp to save a game between sessions.
Scott, J. F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Application. Springer. pp. 583–600 (584–585, 597). ISBN 978-94-007-1019-1.
Nishi, Yoshio; Magyari-Kope, Blanka (2019-06-15). Advances in Non-volatile Memory and Storage Technology. Woodhead Publishing. ISBN 978-0-08-102585-7.

computerhistory.org (Global: 2,702^nd place; English: 1,789^th place)

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"FRAM technology". Cypress semiconductos.
"CY15B116QI Data Sheet". Cypress Semiconductors. p. 19.
"FRAM – Magnetic field Immunity". Cypress Semiconductors.
"F-RAM™ Technology Brief". Cypress Semiconductors. June 2016. 001-88042 Rev. *B. Archived from the original on 2019-01-11.
"FRAM Data sheets". Cypress Semiconductors."CY15B116QI Data Sheet". Cypress Semiconductors. p. 19.
"FRAM". Cypress Semiconductors.
"Energy comparison between FRAM and EEPROM". Cypress Semiconductors.

doi.org (Global: 2^nd place; English: 2^nd place)

Rabe, Karin M.; Dawber, Matthew; Lichtensteiger, Céline; Ahn, Charles H.; Triscone, Jean-Marc (2007), "Modern Physics of Ferroelectrics:Essential Background", Physics of Ferroelectrics: A Modern Perspective, Berlin, Heidelberg: Springer, pp. 1–30, doi:10.1007/978-3-540-34591-6_1, ISBN 978-3-540-34591-6
Silva, José P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Bégon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi (2023-08-01). "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices". APL Materials. 11 (8) 089201. Bibcode:2023APLM...11h9201S. doi:10.1063/5.0148068. hdl:10261/341290. ISSN 2166-532X.
Alcala, R.; Materano, M.; Lomenzo, P. D.; Grenouillet, L.; Francois, T.; Coignus, J.; Vaxelaire, N.; Carabasse, C.; Chevalliez, S.; Andrieu, F.; Mikolajick, T.; Schroeder, U. (2022). "BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions". IEEE Journal of the Electron Devices Society. 10: 907–912. Bibcode:2022IJEDS..10..907A. doi:10.1109/JEDS.2022.3198138. ISSN 2168-6734.
Mikolajick, Thomas; Slesazeck, Stefan; Park, Min Hyuk; Schroeder, Uwe (10 May 2018). "Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors". MRS Bulletin. 43 (5): 340–346. Bibcode:2018MRSBu..43..340M. doi:10.1557/mrs.2018.92. ISSN 0883-7694.
Mueller, Stefan; Muller, Johannes; Schroeder, Uwe; Mikolajick, Thomas (29 August 2012). "Reliability Characteristics of Ferroelectric Si:HfO₂ Thin Films for Memory Applications". IEEE Transactions on Device and Materials Reliability. 13 (1): 93–97. doi:10.1109/TDMR.2012.2216269. ISSN 1530-4388.
Lin, Yu-De; Yeh, Po-Chun; Tang, Ying-Tsan; Su, Jian-Wei; Yang, Hsin-Yun; Chen, Yu-Hao; Lin, Chih-Pin; Yeh, Po-Shao; Chen, Jui-Chin; Tzeng, Pei-Jer; Lee, Min-Hung; Hou, Tuo-Hung; Sheu, Shyh-Shyuan; Lo, Wei-Chung; Wu, Chih-I (2021-12-11). "Improving Edge Dead Domain and Endurance in Scaled HfZrO_x FeRAM". 2021 IEEE International Electron Devices Meeting (IEDM). IEEE. pp. 6.4.1–6.4.4. doi:10.1109/IEDM19574.2021.9720692. ISBN 978-1-6654-2572-8.
Grenouillet, L.; Barbot, J.; Laguerre, J.; Martin, S.; Carabasse, C.; Louro, M.; Bedjaoui, M.; Minoret, S.; Kerdilès, S.; Boixaderas, C.; Magis, T.; Jahan, C.; Andrieu, F.; Coignus, J. (15 May 2023). "Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)". 2023 IEEE International Reliability Physics Symposium (IRPS). IEEE. pp. 1–8. doi:10.1109/IRPS48203.2023.10118099. ISBN 978-1-6654-5672-2.
Ridenour, Louis N. (June 1955). "Computer Memories". Scientific American. 192 (6): 92. Bibcode:1955SciAm.192f..92R. doi:10.1038/scientificamerican0655-92. Archived from the original on 2016-08-22. Retrieved 2016-08-22.
Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–3144. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.
Scott, J. F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Applications. Dordrecht: Springer Netherlands. pp. 584–600. doi:10.1007/978-94-007-1019-1_34. ISBN 978-94-007-1019-1.
McAdams, H. P.; Acklin, R.; Blake, T.; Du, X.-H.; Eliason, J.; Fong, J.; Kraus, W. F.; Liu, D.; Madan, S.; Moise, T.; Natarajan, S.; Qian, N.; Qiu, Y.; Remack, K. A.; Rodriguez, J. (30 April 2024). "A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process". IEEE Journal of Solid-State Circuits. 39 (4): 667–677. doi:10.1109/JSSC.2004.825241. ISSN 0018-9200.
Scott, James F.; Paz de Araujo, Carlos A. (1989-12-15). "Ferroelectric Memories". Science. 246 (4936): 1400–1405. Bibcode:1989Sci...246.1400S. doi:10.1126/science.246.4936.1400. PMID 17755995.
Yang, Wanwang; Yu, Chenxi; Li, Haolin; Fan, Mengqi; Song, Xujin; Ma, Haili; Zhou, Zheng; Chang, Pengying; Huang, Peng; Liu, Fei; Liu, Xiaoyan; Kang, Jinfeng (16 November 2022). "Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications". Journal of Semiconductors. 44 (5) 053101. doi:10.1088/1674-4926/44/5/053101. ISSN 1674-4926.
Shkuratov, Sergey I. (2019). Explosive Ferroelectric Generators. World Scientific. doi:10.1142/10958. ISBN 978-981-323-893-0. Retrieved 2025-08-07.
Banerjee, Writam; Kashir, Alireza; Kamba, Stanislav (2022). "Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories". Small. 18 (23) 2107575. Bibcode:2022Small..1807575B. doi:10.1002/smll.202107575. ISSN 1613-6829. PMID 35510954.
Hwang, Cheol Seong (2015). "Prospective of Semiconductor Memory Devices: from Memory System to Materials". Advanced Electronic Materials. 1 (6) 1400056. doi:10.1002/aelm.201400056. ISSN 2199-160X.
Wang, Dong; Hao, Shenglan; Dkhil, Brahim; Tian, Bobo; Duan, Chungang (2024-09-01). "Ferroelectric materials for neuroinspired computing applications". Fundamental Research. 4 (5): 1272–1291. Bibcode:2024FunRe...4.1272W. doi:10.1016/j.fmre.2023.04.013. ISSN 2667-3258. PMC 11489484. PMID 39431127.
Schroeder, Uwe; Park, Min Hyuk; Mikolajick, Thomas; Hwang, Cheol Seong (30 March 2022). "The fundamentals and applications of ferroelectric HfO2". Nature Reviews Materials. 7 (8): 653–669. doi:10.1038/s41578-022-00431-2. ISSN 2058-8437.
Saenger, K. L.; Andricacos, P. C.; Athavale, S. D.; Baniecki, J. D.; Cabral, C.; Costrini, G.; Kwietniak, K. T.; Laibowitz, R. B.; Lian, J. J.; Limb, Y.; Neumayer, D. A.; Wise, M. L. (2000-12-01). "Electrodes and Barriers for Dram and Feram: Processing, Integration, and Fundamentals". MRS Online Proceedings Library. 655 (1): 240–250. doi:10.1557/PROC-655-CC2.1.1. ISSN 1946-4274.
Spanier, J. E.; Kolpak, A. M.; Urban, J. J.; Grinberg, I.; Ouyang, L.; Yun, W. S.; Rappe, A. M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–739. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.
Junquera, J.; Ghosez, P. (2003). "Critical thickness for ferroelectricity in perovskite ultrathin films". Nature. 422 (6931): 506–509. Bibcode:2003Natur.422..506J. doi:10.1038/nature01501. PMID 12673246.
Eshita, T.; Tamura, T.; Arimoto, Y. (2014-01-01), "14 - Ferroelectric random access memory (FRAM) devices", in Nishi, Yoshio (ed.), Advances in Non-volatile Memory and Storage Technology, Woodhead Publishing, pp. 434–454, doi:10.1533/9780857098092.3.434, ISBN 978-0-85709-803-0, retrieved 2025-08-25
Chen, Yanning; Wang, Senlin; Liu, Fang; Wu, Bo; Deng, Yongfeng; Tao, Ran; Wu, Yongyu; Gao, Dawei (2025-01-05). "The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories". Journal of Alloys and Compounds. 1010 178077. doi:10.1016/j.jallcom.2024.178077. ISSN 0925-8388.
Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong (2015). "Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films". Advanced Materials. 27 (11): 1811–1831. Bibcode:2015AdM....27.1811P. doi:10.1002/adma.201404531. ISSN 1521-4095. PMID 25677113.
Lee, Dong-Jae; Seok, Yong-Sik; Choi, Do-Chan; Lee, Jae-Hyeong; Kim, Young-Rae; Kim, Hyeun-Su; Jun, Dong-Soo; Kwon, Oh-Hyun (1 June 1992). "A 35 ns 64 Mb DRAM using on-chip boosted power supply". 1992 Symposium on VLSI Circuits Digest of Technical Papers. pp. 64–65. doi:10.1109/VLSIC.1992.229238. ISBN 978-0-7803-0701-8. S2CID 62372447 – via IEEE Xplore.

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EETimes (2002-11-07). "TI backs FRAM embedded memory for 90-nm designs". EE Times. Retrieved 2025-08-07.

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Wong, William G. (March 21, 2018). "Unleashing MRAM as Persistent Memory". Electronic Design.

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"Memory FRAM 4 M Bit (512 K × 8) MB85R4001A" (PDF). Fujitsu Semiconductor Data Sheet. Fujitsu Semiconductor. 2013. DS501-00005-3v0-E.

hdl.handle.net (Global: 66^th place; English: 34^th place)

Silva, José P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Bégon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi (2023-08-01). "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices". APL Materials. 11 (8) 089201. Bibcode:2023APLM...11h9201S. doi:10.1063/5.0148068. hdl:10261/341290. ISSN 2166-532X.
Buck, Dudley A. (June 1952). Ferroelectrics for Digital Information Storage and Switching (Technical report). MIT. hdl:1721.3/40244. R-212.
Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–3144. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.

ieee.org (Global: 912^th place; English: 722^nd place)

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Bondurant, David (June 2020). "Non-Volatile RAM for the Internet of Things (IOT)" (PDF). IEEE Pikes Peak Section.

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AG, Infineon Technologies. "F-RAM (Ferroelectric RAM) – Infineon Technologies". Infineon. Retrieved 2021-12-18.

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"FeTRAM: memória não-volátil consome 99% menos energia". 29 September 2011.

iop.org (Global: 1,046^th place; English: 1,608^th place)

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Yang, Wanwang; Yu, Chenxi; Li, Haolin; Fan, Mengqi; Song, Xujin; Ma, Haili; Zhou, Zheng; Chang, Pengying; Huang, Peng; Liu, Fei; Liu, Xiaoyan; Kang, Jinfeng (16 November 2022). "Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications". Journal of Semiconductors. 44 (5) 053101. doi:10.1088/1674-4926/44/5/053101. ISSN 1674-4926.

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"2021 2027 Global And Regional Ferroelectric Ram Industry Status And Prospects Professional Market – Market Reports World". Market Reports World. Retrieved 2025-12-19.

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"TN-47-16: Designing for High-Density DDR2 Memory" (PDF). Archived from the original (PDF) on September 20, 2006.

minitool.com (Global: low place; English: low place)

Introduction to FRAM (Ferroelectric RAM) including Its History.

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Ridenour, Louis N. (June 1955). "Computer Memories". Scientific American. 192 (6): 92. Bibcode:1955SciAm.192f..92R. doi:10.1038/scientificamerican0655-92. Archived from the original on 2016-08-22. Retrieved 2016-08-22.

nature.com (Global: 207^th place; English: 347^th place)

Schroeder, Uwe; Park, Min Hyuk; Mikolajick, Thomas; Hwang, Cheol Seong (30 March 2022). "The fundamentals and applications of ferroelectric HfO2". Nature Reviews Materials. 7 (8): 653–669. doi:10.1038/s41578-022-00431-2. ISSN 2058-8437.

nih.gov (Global: 5^th place; English: 5^th place)

pubmed.ncbi.nlm.nih.gov

Thakoor S, Thakoor AP (June 1995). "Optically addressed ferroelectric memory with nondestructive readout". Appl Opt. 34 (17): 3136–3144. Bibcode:1995ApOpt..34.3136T. doi:10.1364/AO.34.003136. hdl:2014/33494. PMID 21052469.
Scott, James F.; Paz de Araujo, Carlos A. (1989-12-15). "Ferroelectric Memories". Science. 246 (4936): 1400–1405. Bibcode:1989Sci...246.1400S. doi:10.1126/science.246.4936.1400. PMID 17755995.
Banerjee, Writam; Kashir, Alireza; Kamba, Stanislav (2022). "Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories". Small. 18 (23) 2107575. Bibcode:2022Small..1807575B. doi:10.1002/smll.202107575. ISSN 1613-6829. PMID 35510954.
Wang, Dong; Hao, Shenglan; Dkhil, Brahim; Tian, Bobo; Duan, Chungang (2024-09-01). "Ferroelectric materials for neuroinspired computing applications". Fundamental Research. 4 (5): 1272–1291. Bibcode:2024FunRe...4.1272W. doi:10.1016/j.fmre.2023.04.013. ISSN 2667-3258. PMC 11489484. PMID 39431127.
Spanier, J. E.; Kolpak, A. M.; Urban, J. J.; Grinberg, I.; Ouyang, L.; Yun, W. S.; Rappe, A. M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–739. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.
Junquera, J.; Ghosez, P. (2003). "Critical thickness for ferroelectricity in perovskite ultrathin films". Nature. 422 (6931): 506–509. Bibcode:2003Natur.422..506J. doi:10.1038/nature01501. PMID 12673246.
Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong (2015). "Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films". Advanced Materials. 27 (11): 1811–1831. Bibcode:2015AdM....27.1811P. doi:10.1002/adma.201404531. ISSN 1521-4095. PMID 25677113.

ncbi.nlm.nih.gov

Wang, Dong; Hao, Shenglan; Dkhil, Brahim; Tian, Bobo; Duan, Chungang (2024-09-01). "Ferroelectric materials for neuroinspired computing applications". Fundamental Research. 4 (5): 1272–1291. Bibcode:2024FunRe...4.1272W. doi:10.1016/j.fmre.2023.04.013. ISSN 2667-3258. PMC 11489484. PMID 39431127.

science.org (Global: 1,007^th place; English: 665^th place)

Scott, James F.; Paz de Araujo, Carlos A. (1989-12-15). "Ferroelectric Memories". Science. 246 (4936): 1400–1405. Bibcode:1989Sci...246.1400S. doi:10.1126/science.246.4936.1400. PMID 17755995.

sciencedirect.com (Global: 137^th place; English: 146^th place)

Eshita, T.; Tamura, T.; Arimoto, Y. (2014-01-01), "14 - Ferroelectric random access memory (FRAM) devices", in Nishi, Yoshio (ed.), Advances in Non-volatile Memory and Storage Technology, Woodhead Publishing, pp. 434–454, doi:10.1533/9780857098092.3.434, ISBN 978-0-85709-803-0, retrieved 2025-08-25
Chen, Yanning; Wang, Senlin; Liu, Fang; Wu, Bo; Deng, Yongfeng; Tao, Ran; Wu, Yongyu; Gao, Dawei (2025-01-05). "The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories". Journal of Alloys and Compounds. 1010 178077. doi:10.1016/j.jallcom.2024.178077. ISSN 0925-8388.
Locatelli, Nicolas; Herrera Diez, Liza; Mikolajick, Thomas (2020-01-01). "Chapter 4 – Magnetic and ferroelectric memories". In Spiga, Sabina; Sebastian, Abu; Querlioz, Damien; Rajendran, Bipin (eds.). Memristive Devices for Brain-Inspired Computing. Woodhead Publishing Series in Electronic and Optical Materials. Woodhead Publishing. pp. 97–134. ISBN 978-0-08-102782-0. Retrieved 2025-08-25.

semanticscholar.org (Global: 15^th place; English: 8^th place)

api.semanticscholar.org

Lee, Dong-Jae; Seok, Yong-Sik; Choi, Do-Chan; Lee, Jae-Hyeong; Kim, Young-Rae; Kim, Hyeun-Su; Jun, Dong-Soo; Kwon, Oh-Hyun (1 June 1992). "A 35 ns 64 Mb DRAM using on-chip boosted power supply". 1992 Symposium on VLSI Circuits Digest of Technical Papers. pp. 64–65. doi:10.1109/VLSIC.1992.229238. ISBN 978-0-7803-0701-8. S2CID 62372447 – via IEEE Xplore.

semiengineering.com (Global: low place; English: low place)

Ferroelectric Memories: The Middle Ground.

skhynix.com (Global: low place; English: low place)

"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.

springer.com (Global: 182^nd place; English: 172^nd place)

link.springer.com

Mikolajick, Thomas; Slesazeck, Stefan; Park, Min Hyuk; Schroeder, Uwe (10 May 2018). "Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors". MRS Bulletin. 43 (5): 340–346. Bibcode:2018MRSBu..43..340M. doi:10.1557/mrs.2018.92. ISSN 0883-7694.
Scott, J. F. (2003). "Nano-Ferroelectrics". In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis, Functional Properties and Applications. Dordrecht: Springer Netherlands. pp. 584–600. doi:10.1007/978-94-007-1019-1_34. ISBN 978-94-007-1019-1.

ssstc.com (Global: low place; English: low place)

A Guide to NAND Flash Memory: Comparing SLC, MLC, TLC, and QLC.

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ti.com (Global: 6,779^th place; English: 4,625^th place)

"FRAM – Ultra-Low-Power Embedded Memory". Texas Instruments.

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"User Manual: Single phase, single rate, Credit Meter". Ampy Automation Ltd. The FRAM is guaranteed for a minimum of 10,000,000,000 write cycles.

upenn.edu (Global: 784^th place; English: 498^th place)

web.sas.upenn.edu

Spanier, J. E.; Kolpak, A. M.; Urban, J. J.; Grinberg, I.; Ouyang, L.; Yun, W. S.; Rappe, A. M.; Park, H. (2006). "Ferroelectric phase transition in individual single-crystalline BaTiO₃ nanowires" (PDF). Nano Letters. 6 (4): 735–739. Bibcode:2006NanoL...6..735S. doi:10.1021/nl052538e. PMID 16608274.

web.archive.org (Global: 1^st place; English: 1^st place)

Ridenour, Louis N. (June 1955). "Computer Memories". Scientific American. 192 (6): 92. Bibcode:1955SciAm.192f..92R. doi:10.1038/scientificamerican0655-92. Archived from the original on 2016-08-22. Retrieved 2016-08-22.
"History: 1990s". SK Hynix. Archived from the original on 5 February 2021. Retrieved 6 July 2019.
"Cypress Semiconductor completes Ramtron acquisition". Denver Business Journal. 21 November 2012. Archived from the original on 2012-11-30.
"TN-47-16: Designing for High-Density DDR2 Memory" (PDF). Archived from the original (PDF) on September 20, 2006.
"F-RAM™ Technology Brief". Cypress Semiconductors. June 2016. 001-88042 Rev. *B. Archived from the original on 2019-01-11.

wiley.com (Global: 150^th place; English: 174^th place)

onlinelibrary.wiley.com

Banerjee, Writam; Kashir, Alireza; Kamba, Stanislav (2022). "Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories". Small. 18 (23) 2107575. Bibcode:2022Small..1807575B. doi:10.1002/smll.202107575. ISSN 1613-6829. PMID 35510954.
Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong (2015). "Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films". Advanced Materials. 27 (11): 1811–1831. Bibcode:2015AdM....27.1811P. doi:10.1002/adma.201404531. ISSN 1521-4095. PMID 25677113.

worldcat.org (Global: 4^th place; English: 4^th place)

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Silva, José P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Bégon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi (2023-08-01). "Roadmap on ferroelectric hafnia- and zirconia-based materials and devices". APL Materials. 11 (8) 089201. Bibcode:2023APLM...11h9201S. doi:10.1063/5.0148068. hdl:10261/341290. ISSN 2166-532X.
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Mueller, Stefan; Muller, Johannes; Schroeder, Uwe; Mikolajick, Thomas (29 August 2012). "Reliability Characteristics of Ferroelectric Si:HfO₂ Thin Films for Memory Applications". IEEE Transactions on Device and Materials Reliability. 13 (1): 93–97. doi:10.1109/TDMR.2012.2216269. ISSN 1530-4388.
McAdams, H. P.; Acklin, R.; Blake, T.; Du, X.-H.; Eliason, J.; Fong, J.; Kraus, W. F.; Liu, D.; Madan, S.; Moise, T.; Natarajan, S.; Qian, N.; Qiu, Y.; Remack, K. A.; Rodriguez, J. (30 April 2024). "A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process". IEEE Journal of Solid-State Circuits. 39 (4): 667–677. doi:10.1109/JSSC.2004.825241. ISSN 0018-9200.
Yang, Wanwang; Yu, Chenxi; Li, Haolin; Fan, Mengqi; Song, Xujin; Ma, Haili; Zhou, Zheng; Chang, Pengying; Huang, Peng; Liu, Fei; Liu, Xiaoyan; Kang, Jinfeng (16 November 2022). "Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications". Journal of Semiconductors. 44 (5) 053101. doi:10.1088/1674-4926/44/5/053101. ISSN 1674-4926.
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Shkuratov, Sergey I. (2019). Explosive Ferroelectric Generators. World Scientific. doi:10.1142/10958. ISBN 978-981-323-893-0. Retrieved 2025-08-07.

Ferroelectric RAM (English Wikipedia)

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