Field-effect transistor (English Wikipedia)

Nishizawa, Jun-Ichi (1982). "Junction Field-Effect Devices". In Sittig, Roland; Roggwiller, P. (eds.). Semiconductor Devices for Power Conditioning. Springer. pp. 241–272. doi:10.1007/978-1-4684-7263-9_11. ISBN 978-1-4684-7265-3.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Lillian Hoddeson (1994). "Research on crystal rectifiers during World War II and the invention of the transistor". History and Technology. 11 (2): 121–130. doi:10.1080/07341519408581858.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. Bibcode:2011PhyE...43.1509S. doi:10.1016/j.physe.2011.04.018.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4: 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

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Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.

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Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. Bibcode:2011PhyE...43.1509S. doi:10.1016/j.physe.2011.04.018.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4: 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.

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Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4: 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

ncbi.nlm.nih.gov

Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4: 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.

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Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.

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Lilienfeld, J.E. "Method and apparatus for controlling electric current" Archived 2022-04-09 at the Wayback Machine US Patent no. 1,745,175 (filed: 8 October 1926 ; issued: 28 January 1930).
Lee, Thomas H. (2003). The Design of CMOS Radio-Frequency Integrated Circuits (PDF). Cambridge University Press. ISBN 978-1-139-64377-1. Archived from the original (PDF) on 2019-12-09. Retrieved 2019-07-20.
"Remarks by Director Iancu at the 2019 International Intellectual Property Conference". United States Patent and Trademark Office. June 10, 2019. Archived from the original on 17 December 2019. Retrieved 20 July 2019.
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Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.

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"The Foundation of Today's Digital World: The Triumph of the MOS Transistor". Computer History Museum. 13 July 2010. Retrieved 21 July 2019.

Field-effect transistor (English Wikipedia)

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