Field-effect transistor (English Wikipedia)

Nishizawa, Jun-Ichi (1982). "Junction Field-Effect Devices". In Sittig, Roland; Roggwiller, P. (eds.). Semiconductor Devices for Power Conditioning. Springer. pp. 241–272. doi:10.1007/978-1-4684-7263-9_11. ISBN 978-1-4684-7265-3.
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Lillian Hoddeson (1994). "Research on crystal rectifiers during World War II and the invention of the transistor". History and Technology. 11 (2): 121–130. doi:10.1080/07341519408581858.
Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Howard R. Duff (2001). "John Bardeen and transistor physics". AIP Conference Proceedings. Vol. 550. pp. 3–32. doi:10.1063/1.1354371.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. Bibcode:2011PhyE...43.1509S. doi:10.1016/j.physe.2011.04.018.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.

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Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.

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Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.

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Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor". IEEE Transactions on Electron Devices. 14 (2): 69–74. Bibcode:1967ITED...14...69F. doi:10.1109/T-ED.1967.15901.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. Bibcode:2011PhyE...43.1509S. doi:10.1016/j.physe.2011.04.018.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal of the Electrochemical Society. 104 (9): 547. doi:10.1149/1.2428650.
Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.

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Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Schöning, Michael J.; Poghossian, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)" (PDF). Analyst. 127 (9): 1137–1151. Bibcode:2002Ana...127.1137S. doi:10.1039/B204444G. PMID 12375833.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

ncbi.nlm.nih.gov

Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014). "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits". Scientific Reports. 4 4295. Bibcode:2014NatSR...4E4295S. doi:10.1038/srep04295. PMC 3944386. PMID 24599023.

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Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332 (6035): 1294–1297. Bibcode:2011Sci...332.1294L. doi:10.1126/science.1204428. PMID 21659599. S2CID 3020496.
Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. Bibcode:2011Natur.479..329I. doi:10.1038/nature10679. PMID 22094693. S2CID 4322368.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.

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Huff, Howard; Riordan, Michael (2007-09-01). "Frosch and Derick: Fifty Years Later (Foreword)". The Electrochemical Society Interface. 16 (3): 29. doi:10.1149/2.F02073IF. ISSN 1064-8208.
Ligenza, J. R.; Spitzer, W. G. (1960-07-01). "The mechanisms for silicon oxidation in steam and oxygen". Journal of Physics and Chemistry of Solids. 14: 131–136. Bibcode:1960JPCS...14..131L. doi:10.1016/0022-3697(60)90219-5. ISSN 0022-3697.
Motoyoshi, M. (2009). "Through-Silicon Via (TSV)". Proceedings of the IEEE. 97 (1): 43–48. doi:10.1109/JPROC.2008.2007462. ISSN 0018-9219. S2CID 29105721.
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate". Solid-State Electronics. 27 (8): 827–828. Bibcode:1984SSEle..27..827S. doi:10.1016/0038-1101(84)90036-4. ISSN 0038-1101.
Appenzeller J, et al. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. Bibcode:2008ITED...55.2827A. doi:10.1109/ted.2008.2008011. ISSN 0018-9383. OCLC 755663637. S2CID 703393.
Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1): 12596. arXiv:1707.01459. Bibcode:2017NatSR...712596P. doi:10.1038/s41598-017-12816-3. ISSN 2045-2322. OCLC 1010581463. PMC 5626721. PMID 28974712.

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Field-effect transistor (English Wikipedia)

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