Flash memory (English Wikipedia)

Yiu, Joseph (February 2015). Design of SoC for High Reliability Systems with Embedded Processors (PDF). Embedded World 2015. ARM. Archived (PDF) from the original on 4 December 2023. Retrieved 23 October 2019.

arstechnica.com (Global: 388^th place; English: 265^th place)

Salter, Jim (28 September 2019). "SSDs are on track to get bigger and cheaper thanks to PLC technology". Ars Technica.

atmel.com (Global: low place; English: low place)

"8-Bit AVR Microcontroller ATmega32A Datasheet Complete" (PDF). 19 February 2016. p. 18. Archived from the original (PDF) on 9 April 2016. Retrieved 29 May 2016. Reliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85 °C or 100 years at 25 °C

backblaze.com (Global: low place; English: low place)

Bauer, Roderick (6 March 2018). "HDD vs SSD: What Does the Future for Storage Hold?". Backblaze. Archived from the original on 22 December 2022.

blocksandfiles.com (Global: low place; English: low place)

Mellor, Chris (18 August 2023). "Samsung has 300-layer NAND coming, with 430 layers after that – report".

books.google.com (Global: 3^rd place; English: 3^rd place)

Micheloni, Rino; Marelli, Alessia; Eshghi, Kam (2012), Inside Solid State Drives (SSDs), Springer, Bibcode:2013issd.book.....M, ISBN 9789400751460, archived from the original on 9 February 2017
Micheloni, Rino; Crippa, Luca (2010), Inside NAND Flash Memories, Springer, ISBN 9789048194315, archived from the original on 9 February 2017 In particular, Takeuchi, K. (2010). "Low power 3D-integrated SSD". Inside NAND Flash Memories. pp. 515–536. doi:10.1007/978-90-481-9431-5_18. ISBN 978-90-481-9430-8.
Mozel, Tracey (2009), CMOSET Fall 2009 Circuits and Memories Track Presentation Slides, CMOS Emerging Technologies, ISBN 9781927500217, archived from the original on 9 February 2017
Springer Handbook of Semiconductor Devices. Springer. 10 November 2022. ISBN 978-3-030-79827-7.
CMOS Processors and Memories. Springer. 9 August 2010. ISBN 978-90-481-9216-8.
Flash Memories: Economic Principles of Performance, Cost and Reliability Optimization. Springer. 12 September 2013. ISBN 978-94-007-6082-0.
Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010). Inside NAND Flash Memories. Springer. ISBN 978-90-481-9431-5.
Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010). Inside NAND Flash Memories. Springer Science & Business Media. ISBN 9789048194315 – via Google Books.
Richter, Detlev (12 September 2013). Flash Memories: Economic Principles of Performance, Cost and Reliability Optimization. Springer. ISBN 978-94-007-6082-0.
Daintith, John; Wright, Edmund (14 May 2014). The Facts on File Dictionary of Computer Science. Infobase Publishing. ISBN 9781438109398 – via Google Books.
Bhattacharyya, Arup (6 July 2017). Silicon Based Unified Memory Devices and Technology. CRC Press. ISBN 9781351798327 – via Google Books.
RAJARAMAN, V.; ADABALA, NEEHARIKA (15 December 2014). FUNDAMENTALS OF COMPUTERS. PHI Learning Pvt. Ltd. ISBN 9788120350670 – via Google Books.
Veendrick, Harry (21 June 2018). Bits on Chips. Springer. ISBN 978-3-319-76096-4.
Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010). Inside NAND Flash Memories. Springer Science & Business Media. ISBN 9789048194315 – via Google Books.
Rudan, Massimo; Brunetti, Rossella; Reggiani, Susanna (10 November 2022). Springer Handbook of Semiconductor Devices. Springer Nature. ISBN 9783030798277 – via Google Books.
Iniewski, Krzysztof (9 August 2010). CMOS Processors and Memories. Springer. ISBN 978-90-481-9216-8.
Micheloni, Rino; Crippa, Luca; Marelli, Alessia (27 July 2010). Inside NAND Flash Memories. Springer. ISBN 978-90-481-9431-5.
Gervasi, Osvaldo (29 August 2007). Computational Science and Its Applications - ICCSA 2007: International Conference, Kuala Lumpur, Malaysia, August 26-29, 2007. Proceedings, Part I. Springer. ISBN 978-3-540-74472-6.
Clive Maxfield. "Bebop to the Boolean Boogie: An Unconventional Guide to Electronics". p. 232.
Cappelletti, Paulo; Golla, Carla; Olivo, Piero; Zanoni, Enrico (2013). Flash Memories. Springer Science & Business Media. p. 32. ISBN 9781461550150.
"Not Flashing Quite As Fast". Electronic Business. 26 (7–13). Cahners Publishing Company: 504. 2000. Unit shipments increased 64% in 1999 from the prior year, and are forecast to increase 44% to 1.8 billion units in 2000.
Coughlin, Thomas M. (2017). Digital Storage in Consumer Electronics: The Essential Guide. Springer. p. 217. ISBN 9783319699073.

bunniestudios.com (Global: low place; English: low place)

"On Hacking MicroSD Cards". bunnie's blog. 29 December 2013. Archived from the original on 2 November 2023.

businessquant.com (Global: low place; English: low place)

"NAND Revenue by Manufacturers Worldwide (2014-2022)". 26 May 2020. Retrieved 27 June 2022.

businesswire.com (Global: 615^th place; English: 407^th place)

"Winbond Top Serial Flash Memory Supplier Worldwide, Ships 1.7 Billion Units in 2012, Ramps 58nm Production" (Press release). San Jose, Calif. & Taichung, Taiwan: Winbond. 10 April 2013. Archived from the original on 2 November 2023. Retrieved 16 October 2019 – via Business Wire.
"Combined SSD, HDD Storage Shipped Jumps 21% to 912 Exabytes in 2018" (Press release). Cupertino, Calif.: TRENDFOCUS. 7 March 2019. Archived from the original on 2 November 2023. Retrieved 17 October 2019 – via Business Wire.

cern.ch (Global: 1,959^th place; English: 1,611^th place)

indico.cern.ch

Sze, Simon Min. "Evolution of Nonvoltatile Semiconductor Memory: From Invention to Nanocrystal Memory" (PDF). CERN. National Yang Ming Chiao Tung University. p. 41. Archived (PDF) from the original on 2 November 2023. Retrieved 22 October 2019.

cmu.edu (Global: 1,564^th place; English: 1,028^th place)

users.ece.cmu.edu

"Data Retention in MLC NAND Flash Memory: Characterization, Optimization, and Recovery" (PDF). 27 January 2015. p. 10. Archived (PDF) from the original on 7 October 2016. Retrieved 27 April 2016.

cnet.com (Global: 272^nd place; English: 225^th place)

"NAND overtakes NOR in flash memory". CNET.
Crothers, Brooke. "SanDisk to begin making 'X4' flash chips". CNET.
Crothers, Brooke. "SanDisk ships 'X4' flash chips". CNET.

computer.org (Global: 5,196^th place; English: 3,635^th place)

Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2009). "Inductor design of 20-V boost converter for low power 3D solid state drive with NAND flash memories". Proceedings of the 2009 ACM/IEEE international symposium on Low power electronics and design. pp. 87–92. doi:10.1145/1594233.1594253. ISBN 978-1-60558-684-7. Archived from the original on 5 March 2016.

computerhistory.org (Global: 2,213^th place; English: 1,495^th place)

"1971: Reusable semiconductor ROM introduced". The Storage Engine. Computer History Museum. 11 June 2018. Archived from the original on 10 August 2023. Retrieved 19 June 2019.

convertunits.com (Global: low place; English: low place)

"Computer data storage unit conversion - non-SI quantity". Archived from the original on 8 May 2015. Retrieved 20 May 2015.

custompcreview.com (Global: low place; English: low place)

"Samsung Launches Monster 4TB 850 EVO SSD Priced at $1,499 | Custom PC Review". Custom PC Review. 13 July 2016. Archived from the original on 9 October 2016. Retrieved 8 October 2016.
"Samsung Unveils 32TB SSD Leveraging 4th Gen 64-Layer 3D V-NAND | Custom PC Review". Custom PC Review. 11 August 2016. Archived from the original on 9 October 2016. Retrieved 8 October 2016.

cypress.com (Global: low place; English: low place)

investors.cypress.com

"2011 Annual Report". Cypress Semiconductor. 2012. Archived from the original on 16 October 2019. Retrieved 16 October 2019.

dailytech.com (Global: low place; English: 8,724^th place)

Ng, Jansen. "Samsung Confirms 32nm Flash Problems, Working on New SSD Controller". dailytech.com. Archived from the original on 4 March 2016. Retrieved 3 October 2009.

datasheetcatalog.com (Global: low place; English: low place)

pdf.datasheetcatalog.com

"DD28F032SA Datasheet" (PDF). Intel. Archived (PDF) from the original on 4 December 2023. Retrieved 27 June 2019.

doi.org (Global: 2^nd place; English: 2^nd place)

Kim, Chulbum; Cho, Ji-Ho; Jeong, Woopyo; Park, Il-han; Park, Hyun-Wook; Kim, Doo-Hyun; Kang, Daewoon; Lee, Sunghoon; Lee, Ji-Sang; Kim, Wontae; Park, Jiyoon; Ahn, Yang-lo; Lee, Jiyoung; Lee, Jong-Hoon; Kim, Seungbum; Yoon, Hyun-Jun; Yu, Jaedoeg; Choi, Nayoung; Kwon, Yelim; Kim, Nahyun; Jang, Hwajun; Park, Jonghoon; Song, Seunghwan; Park, Yongha; Bang, Jinbae; Hong, Sangki; Jeong, Byunghoon; Kim, Hyun-Jin; Lee, Chunan; et al. (2017). 11.4 a 512Gb 3b/Cell 64-stacked WL 3D V-NAND flash memory. International Solid-State Circuits Conference. San Francisco: IEEE. pp. 202–203. doi:10.1109/ISSCC.2017.7870331. ISBN 978-1-5090-3758-2. ISSN 2376-8606. S2CID 206998691.
KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device". Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076. ISBN 978-981-02-0209-5. {{cite journal}}: ISBN / Date incompatibility (help)
Masuoka, F.; Asano, M.; Iwahashi, H.; Komuro, T.; Tanaka, S. (December 1984). A new flash E²PROM cell using triple polysilicon technology. 1984 International Electron Devices Meeting. San Francisco. pp. 464–467. doi:10.1109/IEDM.1984.190752. S2CID 25967023.
Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, R. (1987). "New ultra high density EPROM and flash EEPROM with NAND structure cell". Electron Devices Meeting, 1987 International. IEDM 1987. IEEE. pp. 552–555. doi:10.1109/IEDM.1987.191485.
James, Dick (May 2014). 3D ICs in the real world. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). Saratoga Springs, NY. pp. 113–119. doi:10.1109/ASMC.2014.6846988. ISBN 978-1-4799-3944-2. ISSN 2376-6697. S2CID 42565898.
Ito, Takashi; Taito, Yasuhiko (9 September 2017). "SONOS Split-Gate eFlash Memory". In Hidaka, Hideto (ed.). Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations. Integrated Circuits and Systems. Springer Publishing. pp. 209–244. doi:10.1007/978-3-319-55306-1_7. ISBN 978-3-319-55306-1.
Bez, Roberto; Camerlenghi, E.; Modelli, Alberto; Visconti, Angelo (April 2003). "Introduction to flash memory". Proceedings of the IEEE. 91 (4). Institute of Electrical and Electronics Engineers: 498–502. Bibcode:2003IEEEP..91..489B. doi:10.1109/JPROC.2003.811702.
Lee, Jang-Sik (18 October 2011). "Review paper: Nano-floating gate memory devices". Electronic Materials Letters. 7 (3). Korean Institute of Metals and Materials: 175–183. Bibcode:2011EML.....7..175L. doi:10.1007/s13391-011-0901-5. S2CID 110503864.
Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014). "Overview of emerging nonvolatile memory technologies". Nanoscale Research Letters. 9 (1): 526. Bibcode:2014NRL.....9..526M. doi:10.1186/1556-276x-9-526. ISSN 1556-276X. PMC 4182445. PMID 25278820. 526.
Grossi, A.; Zambelli, C.; Olivo, P. (7 June 2016). "Reliability of 3D NAND Flash Memories". In Micheloni, Rino (ed.). 3D Flash Memories. Dordrecht: Springer Science+Business Media. pp. 29–62. doi:10.1007/978-94-017-7512-0_2. ISBN 978-94-017-7512-0.
Kodama, N.; Oyama, K.; Shirai, H.; Saitoh, K.; Okazawa, T.; Hokari, Y. (December 1991). A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory. International Electron Devices Meeting. Washington, DC: IEEE. pp. 303–306. doi:10.1109/IEDM.1991.235443. ISBN 0-7803-0243-5. ISSN 0163-1918. S2CID 111203629.
Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000). "Bake induced charge gain in NOR flash cells". IEEE Electron Device Letters. 21 (4): 184–186. Bibcode:2000IEDL...21..184F. doi:10.1109/55.830976. ISSN 1558-0563. S2CID 24724751.
Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2009). "Inductor design of 20-V boost converter for low power 3D solid state drive with NAND flash memories". Proceedings of the 2009 ACM/IEEE international symposium on Low power electronics and design. pp. 87–92. doi:10.1145/1594233.1594253. ISBN 978-1-60558-684-7. Archived from the original on 5 March 2016.
Micheloni, Rino; Crippa, Luca (2010), Inside NAND Flash Memories, Springer, ISBN 9789048194315, archived from the original on 9 February 2017 In particular, Takeuchi, K. (2010). "Low power 3D-integrated SSD". Inside NAND Flash Memories. pp. 515–536. doi:10.1007/978-90-481-9431-5_18. ISBN 978-90-481-9430-8.
Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2010). "Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories". IEICE Transactions on Electronics. 93 (3): 317–323. Bibcode:2010IEITE..93..317Y. doi:10.1587/transele.E93.C.317.
Takeuchi, Ken (May 2010). Low power 3D-integrated Solid-State Drive (SSD) with adaptive voltage generator. IEEE International Memory Workshop (IMW). Seoul, Korea. doi:10.1109/IMW.2010.5488397. ISBN 978-1-4244-6721-1. ISSN 2159-4864.
Ishida, Koichi; Yasufuku, Tadashi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (May 2011). "1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD". IEEE Journal of Solid-State Circuits. 46 (6). Institute of Electrical and Electronics Engineers: 1478–1487. Bibcode:2011IJSSC..46.1478I. doi:10.1109/JSSC.2011.2131810. ISSN 1558-173X. S2CID 13701601.
Tanzawa, T.; Takano, Y.; Watanabe, K.; Atsumi, S. (2002). "High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memories". IEEE Journal of Solid-State Circuits. 37 (10): 1318–1325. Bibcode:2002IJSSC..37.1318T. doi:10.1109/JSSC.2002.803045.
Dube, Belinda Langelihle (2020). "Manufacturing Challenges and Cost Evaluation of New Generation 3D Memories". 2020 China Semiconductor Technology International Conference (CSTIC). pp. 1–3. doi:10.1109/CSTIC49141.2020.9282426. ISBN 978-1-7281-6558-5. S2CID 229376195.
Calabrese, Marcello (May 2013). "Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology". Proceedings of 2013 International Conference on IC Design & Technology (ICICDT). pp. 37–40. doi:10.1109/ICICDT.2013.6563298. ISBN 978-1-4673-4743-3. S2CID 37127243.
Kim, Jesung; Kim, John Min; Noh, Sam H.; Min, Sang Lyul; Cho, Yookun (May 2002). "A Space-Efficient Flash Translation Layer for CompactFlash Systems". Proceedings of the IEEE. Vol. 48, no. 2. pp. 366–375. doi:10.1109/TCE.2002.1010143.
Pavan, Paolo; Bez, Roberto; Olivo, Piero; Zanoni, Enrico (1997). "Flash Memory Cells – An Overview". Proceedings of the IEEE. Vol. 85, no. 8 (published August 1997). pp. 1248–1271. doi:10.1109/5.622505. Retrieved 15 August 2008.
Kim, Kinam; Koh, Gwan-Hyeob (16 May 2004). Future memory technology including emerging new memories. 24th International Conference on Microelectronics. Niš, Serbia: Institute of Electrical and Electronics Engineers. pp. 377–384. doi:10.1109/ICMEL.2004.1314646. ISBN 978-0-7803-8166-7. S2CID 40985239.

dramexchange.com (Global: low place; English: low place)

"Markit View: Major events in the 2008 DRAM industry; End application demand remains weak, 2009 NAND Flash demand bit growth being revised down to 81%". DRAMeXchange. 30 December 2008. Archived from the original on 15 April 2023. Retrieved 16 October 2019.

dslreports.com (Global: low place; English: low place)

Cooke, Jim (August 2007). The Inconvenient Truths of NAND Flash Memory (PDF). Flash Memory Summit 2007. Micron Technology. Archived (PDF) from the original on 15 February 2018.

economist.com (Global: 254^th place; English: 236^th place)

"Not just a flash in the pan". The Economist. Reuters. 11 March 2006. Archived from the original on 21 November 2023. Retrieved 10 September 2019.

eetimes.com (Global: 3,722^nd place; English: 2,509^th place)

Clarke, Peter (8 August 2013). "Samsung Confirms 24 Layers in 3D NAND". EE Times. Archived from the original on 19 February 2020.
Zitlaw, Cliff (2 May 2011). "The Future of NOR Flash Memory". Memory Designline. UBM Media. Archived from the original on 1 June 2023. Retrieved 3 May 2011.
McGrath, Dylan (20 February 2019). "Toshiba Claims Highest-Capacity NAND". EE Times. San Francisco. Archived from the original on 23 April 2023. Retrieved 23 June 2019.

electronicdesign.com (Global: low place; English: 7,853^rd place)

Wong, Bill (15 April 2013). "Interview: Spansion's CTO Talks About Embedded Charge Trap NOR Flash Technology". Electronic Design. Archived from the original on 4 December 2023.
"The Fundamentals of Flash Memory Storage". 20 March 2012. Archived from the original on 4 January 2017. Retrieved 3 January 2017.

electronicproducts.com (Global: low place; English: low place)

www2.electronicproducts.com

Tal, Arie (February 2002). "NAND vs. NOR flash technology: The designer should weigh the options when using flash memory". Archived from the original on 28 July 2010. Retrieved 31 July 2010.

electronics-notes.com (Global: low place; English: low place)

"Flash Memory Reliability, Life & Wear". Electronics Notes. Archived from the original on 2 November 2023.

electronicsweekly.com (Global: low place; English: low place)

Manners, David (30 January 2019). "Samsung makes 1TB flash eUFS module". Electronics Weekly. Archived from the original on 10 February 2023. Retrieved 23 June 2019.

elitepcbuilding.com (Global: low place; English: low place)

Lyth0s (17 March 2011). "SSD vs. HDD". elitepcbuilding.com. Archived from the original on 20 August 2011. Retrieved 11 July 2011.

elnec.com (Global: low place; English: low place)

"Samsung ECC algorithm" (PDF). Samsung. June 2008. Archived (PDF) from the original on 12 October 2008. Retrieved 15 August 2008.

embedded.com (Global: low place; English: low place)

Aravindan, Avinash (13 November 2018). "Flash 101: Types of NAND Flash". embedded.com. Archived from the original on 6 November 2023.
Aravindan, Avinash (23 July 2018). "Flash 101: NAND Flash vs NOR Flash". Embedded.com. Retrieved 23 December 2020.

engadget.com (Global: 466^th place; English: 349^th place)

Melanson, Donald (12 June 2007). "Toshiba announces new "3D" NAND flash technology". Engadget. Archived from the original on 17 December 2022. Retrieved 10 July 2019.
Dent, Steve (20 July 2018). "Toshiba's flash chips could boost SSD capacity by 500 percent". Engadget. Archived from the original on 6 November 2023. Retrieved 23 June 2019.

espacenet.com (Global: 800^th place; English: 676^th place)

worldwide.espacenet.com

US 4531203 Fujio Masuoka

eweek.com (Global: 5,390^th place; English: 3,454^th place)

"1987: Toshiba Launches NAND Flash". eWeek. 11 April 2012. Retrieved 20 June 2019.
"NAND Flash Memory: 25 Years of Invention, Development – Data Storage – News & Reviews". eWeek.com. Archived from the original on 18 August 2014. Retrieved 18 August 2014.

extremetech.com (Global: 4,667^th place; English: 3,322^nd place)

Hruska, Joel (6 August 2013). "Samsung produces first 3D NAND, aims to boost densities, drive lower cost per GB". ExtremeTech. Archived from the original on 2 November 2023. Retrieved 4 July 2019.

flashstorage.com (Global: low place; English: low place)

"A Flash Storage Technical and Economic Primer". FlashStorage.com. 30 March 2015. Archived from the original on 20 July 2015.

forbes.com (Global: 54^th place; English: 48^th place)

Fulford, Adel (24 June 2002). "Unsung hero". Forbes. Archived from the original on 3 March 2008. Retrieved 18 March 2008.
Bradley, Tony (31 August 2017). "Expand Your Mobile Storage With New 400GB microSD Card From SanDisk". Forbes. Archived from the original on 1 September 2017. Retrieved 2 September 2017.
Handy, Jim (26 May 2014). "How Many Transistors Have Ever Shipped?". Forbes. Archived from the original on 2 November 2023. Retrieved 21 October 2019.

futurememorystorage.com (Global: low place; English: low place)

files.futurememorystorage.com

Choe, Jeongdong (2019). "Comparison of Current 3D NAND Chip & Cell Architecture" (PDF). pp. 21, 24.

gizmag.com (Global: 7,208^th place; English: 4,661^st place)

"Samsung moves into mass production of 3D flash memory". Gizmag.com. 27 August 2013. Archived from the original on 27 August 2013. Retrieved 27 August 2013.
Borghino, Dario (31 March 2015). "3D flash technology moves forward with 10 TB SSDs and the first 48-layer memory cells". Gizmag. Archived from the original on 18 May 2015. Retrieved 31 March 2015.

global.toshiba (Global: low place; English: low place)

"Toshiba commercializes Industry's Highest Capacity Embedded NAND Flash Memory for Mobile Consumer Products" (Press release). Toshiba. 17 April 2007. PR1702. Archived from the original on 18 May 2022. Retrieved 23 November 2010.
"Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices" (Press release). Toshiba. 7 August 2008. PR0701. Archived from the original on 7 November 2023. Retrieved 21 June 2019.
"Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules" (Press release). Toshiba. 17 June 2010. PR1701. Archived from the original on 6 November 2023. Retrieved 21 June 2019.
"Toshiba to Introduce Flash Memory Cards" (Press release). Tokyo: Toshiba. 2 March 1995. PR0201. Archived from the original on 6 November 2023. Retrieved 20 June 2019.
"Toshiba and SanDisk introduce a one gigabit NAND flash memory chip, doubling capacity of future flash products" (Press release). Las Vegas, Nv. and Tokyo, Japan: Toshiba. 12 November 2001. pr1202. Archived from the original on 19 April 2023. Retrieved 20 June 2019.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Bez, Roberto; Camerlenghi, E.; Modelli, Alberto; Visconti, Angelo (April 2003). "Introduction to flash memory". Proceedings of the IEEE. 91 (4). Institute of Electrical and Electronics Engineers: 498–502. Bibcode:2003IEEEP..91..489B. doi:10.1109/JPROC.2003.811702.
Lee, Jang-Sik (18 October 2011). "Review paper: Nano-floating gate memory devices". Electronic Materials Letters. 7 (3). Korean Institute of Metals and Materials: 175–183. Bibcode:2011EML.....7..175L. doi:10.1007/s13391-011-0901-5. S2CID 110503864.
Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014). "Overview of emerging nonvolatile memory technologies". Nanoscale Research Letters. 9 (1): 526. Bibcode:2014NRL.....9..526M. doi:10.1186/1556-276x-9-526. ISSN 1556-276X. PMC 4182445. PMID 25278820. 526.
Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000). "Bake induced charge gain in NOR flash cells". IEEE Electron Device Letters. 21 (4): 184–186. Bibcode:2000IEDL...21..184F. doi:10.1109/55.830976. ISSN 1558-0563. S2CID 24724751.
Micheloni, Rino; Marelli, Alessia; Eshghi, Kam (2012), Inside Solid State Drives (SSDs), Springer, Bibcode:2013issd.book.....M, ISBN 9789400751460, archived from the original on 9 February 2017
Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2010). "Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories". IEICE Transactions on Electronics. 93 (3): 317–323. Bibcode:2010IEITE..93..317Y. doi:10.1587/transele.E93.C.317.
Ishida, Koichi; Yasufuku, Tadashi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (May 2011). "1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD". IEEE Journal of Solid-State Circuits. 46 (6). Institute of Electrical and Electronics Engineers: 1478–1487. Bibcode:2011IJSSC..46.1478I. doi:10.1109/JSSC.2011.2131810. ISSN 1558-173X. S2CID 13701601.
Tanzawa, T.; Takano, Y.; Watanabe, K.; Atsumi, S. (2002). "High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memories". IEEE Journal of Solid-State Circuits. 37 (10): 1318–1325. Bibcode:2002IJSSC..37.1318T. doi:10.1109/JSSC.2002.803045.

hexus.net (Global: low place; English: low place)

Tyson, Mark. "Samsung enables 1TB eUFS 2.1 smartphones". Hexus. Archived from the original on 23 April 2023.

howstuffworks.com (Global: 840^th place; English: 635^th place)

computer.howstuffworks.com

Tyson, Jeff (29 August 2000). "How ROM Works". HowStuffWorks. Archived from the original on 2 December 2023. Retrieved 10 September 2019.

hyperstone.com (Global: low place; English: low place)

"Solid State bit density, and the Flash Memory Controller". hyperstone.com. 17 April 2018. Archived from the original on 9 June 2023. Retrieved 29 May 2018.
"NAND Flash Controllers - The key to endurance and reliability". hyperstone.com. 7 June 2018. Archived from the original on 5 June 2023. Retrieved 1 June 2022.

ieee.org (Global: 652^nd place; English: 515^th place)

ieeexplore.ieee.org

"4-times faster rising VPASS (10V), 15% lower power VPGM (20V), wide output voltage range voltage generator system for 4-times faster 3D-integrated solid-state drives". June 2011. pp. 200–201.
Pavan, Paolo; Bez, Roberto; Olivo, Piero; Zanoni, Enrico (1997). "Flash Memory Cells – An Overview". Proceedings of the IEEE. Vol. 85, no. 8 (published August 1997). pp. 1248–1271. doi:10.1109/5.622505. Retrieved 15 August 2008.

ihs.com (Global: 5,391^st place; English: 3,206^th place)

technology.ihs.com

"NOR Flash Memory Finds Growth Opportunities in Tablets and E-Book Readers". IHS Technology (Press release). IHS Markit. 9 June 2011. Archived from the original on 16 October 2019. Retrieved 16 October 2019.

intel.com (Global: 1,118^th place; English: 825^th place)

download.intel.com

"A chronological list of Intel products. The products are sorted by date" (PDF). Intel museum. Intel. July 2005. Archived from the original (PDF) on 9 August 2007. Retrieved 31 July 2007.

interestingengineering.com (Global: 8,846^th place; English: 5,943^rd place)

Shaikh, Kaif. "China scientists develop flash memory 10,000× faster than current tech". Interesting Engineering. Retrieved 20 April 2025.

jedec.org (Global: low place; English: 7,755^th place)

"JEDEC SSD Specifications Explained" (PDF). p. 27.

kingston.com (Global: low place; English: low place)

media.kingston.com

"Flash Memory Guide" (PDF). Kingston Technology. 2012. MKF-283US. Archived (PDF) from the original on 19 October 2023. Retrieved 4 December 2023.

kingston.com

"Difference between SLC, MLC, TLC and 3D NAND in USB flash drives, SSDs and memory cards". Kingston Technology. February 2022. Archived from the original on 28 November 2023.

kitguru.net (Global: low place; English: low place)

Shilov, Anton (1 October 2015). "Samsung: NAND flash industry will triple output to 253EB by 2020". KitGuru. Archived from the original on 7 November 2023. Retrieved 16 October 2019.

koreatimes.co.kr (Global: 536^th place; English: 386^th place)

"Hynix Surprises NAND Chip Industry". The Korea Times. 5 September 2007. Archived from the original on 21 November 2023. Retrieved 8 July 2019.
"Samsung to unveil new mass-storage memory cards". The Korea Times. 29 August 2012. Archived from the original on 2 November 2023. Retrieved 16 October 2019.

linkedin.com (Global: 895^th place; English: 692^nd place)

"Toshiba's Cost Model for 3D NAND". www.linkedin.com.
"Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash". linkedin.com. Retrieved 1 June 2022.; "Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash". semwiki.com. 21 February 2021. Retrieved 1 June 2022.

maltiel-consulting.com (Global: low place; English: low place)

"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.

media-micron.com (Global: low place; English: low place)

"NAND Flash Design and Use Considerations Introduction" (PDF). Micron Technology. April 2010. TN-29-17. Archived (PDF) from the original on 3 March 2022. Retrieved 29 July 2011.
"UFS 4.0 Infographic" (PDF). Micron. 2023. Archived (PDF) from the original on 29 October 2023.

memblaze.com (Global: low place; English: low place)

"PBlaze4_Memblaze". memblaze.com. Retrieved 28 March 2019.
"PBlaze5 700". memblaze.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
"PBlaze5 900". memblaze.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
"PBlaze5 910/916 series NVMe SSD". memblaze.com. Archived from the original on 27 March 2019. Retrieved 26 March 2019.
"PBlaze5 510/516 series NVMe™ SSD". memblaze.com. Archived from the original on 27 March 2019. Retrieved 26 March 2019.

microchip.com (Global: low place; English: 8,026^th place)

ww1.microchip.com

"AVR105: Power Efficient High Endurance Parameter Storage in Flash Memory". p. 3

micron.com (Global: low place; English: low place)

micron.com

"Memory Module Serial Presence-Detect Introduction" (PDF). Micron Technology. TN-04-42. Archived (PDF) from the original on 26 July 2022. Retrieved 1 June 2022.
"Small-Block vs. Large-Block NAND flash Devices" (PDF). TN-29-07. Archived from the original on 29 October 2023.
NAND Flash 101: An Introduction to NAND Flash and How to Design It in to Your Next Product (PDF), Micron, pp. 2–3, TN-29-19, archived from the original (PDF) on 4 June 2016
Dicker, Derek (5 November 2018). "Say Hello: Meet the World's First QLC SSD, the Micron 5210 ION" (Press release). Micron Technology. Archived from the original on 30 January 2019.
"QLC NAND". Micron.com. Archived from the original on 30 January 2019.

investors.micron.com

Bordner, Kirstin (17 December 2008). "Micron Collaborates with Sun Microsystems to Extend Lifespan of Flash-Based Storage, Achieves One Million Write Cycles" (Press release). Boise, Idaho: Micron Technology. Archived from the original on 20 March 2022.

microsoft.com (Global: 153^rd place; English: 151^st place)

news.microsoft.com

"Dell, Intel And Microsoft Join Forces To Increase Adoption of NAND-Based Flash Memory in PC Platforms" (Press release). Redmond, Wash: Microsoft. 30 May 2007. Archived from the original on 3 June 2023. Retrieved 12 August 2014.

nasa.gov (Global: 75^th place; English: 83^rd place)

trs-new.jpl.nasa.gov

A. H. Johnston, "Space Radiation Effects in Advanced Flash Memories" Archived 4 March 2016 at the Wayback Machine. NASA Electronic Parts and Packaging Program (NEPP). 2001. "... internal transistors used for the charge pump and erase/write control have much thicker oxides because of the requirement for high voltage. This causes flash devices to be considerably more sensitive to total dose damage compared to other ULSI technologies. It also implies that write and erase functions will be the first parameters to fail from total dose. ... Flash memories will work at much higher radiation levels in the read mode. ... The charge pumps that are required to generate the high voltage for erasing and writing are usually the most sensitive circuit functions, usually failing below 10 krad(SI)."

nbnews.info (Global: low place; English: low place)

"Sony Vaio UX UMPC – now with 32 GB Flash memory | NBnews.info. Laptop and notebook news, reviews, test, specs, price | Каталог ноутбуков, ультрабуков и планшетов, новости, обзоры". Archived from the original on 28 June 2022. Retrieved 7 November 2018.

nec.co.jp (Global: low place; English: low place)

Bridgman, Aston (28 October 1997). "NEC and SanDisk Develop 80Mb Flash Memory" (Press release). NEC. 97/10/28-01. Archived from the original on 18 October 2020.

ni.com (Global: low place; English: low place)

"Understanding Life Expectancy of Flash Storage". www.ni.com. 23 July 2020. Archived from the original on 1 December 2023. Retrieved 19 December 2020.

nih.gov (Global: 4^th place; English: 4^th place)

ncbi.nlm.nih.gov

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014). "Overview of emerging nonvolatile memory technologies". Nanoscale Research Letters. 9 (1): 526. Bibcode:2014NRL.....9..526M. doi:10.1186/1556-276x-9-526. ISSN 1556-276X. PMC 4182445. PMID 25278820. 526.

pubmed.ncbi.nlm.nih.gov

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014). "Overview of emerging nonvolatile memory technologies". Nanoscale Research Letters. 9 (1): 526. Bibcode:2014NRL.....9..526M. doi:10.1186/1556-276x-9-526. ISSN 1556-276X. PMC 4182445. PMID 25278820. 526.

nikkei.com (Global: 211^th place; English: 915^th place)

asia.nikkei.com

"Flash memory prices rebound as makers introduce larger-capacity chips". Nikkei Asian Review. Nikkei, Inc. 21 July 2016. Archived from the original on 2 November 2023. Retrieved 16 October 2019.

nxp.com (Global: low place; English: 8,784^th place)

"LPC313x NAND flash data and bad block management" (PDF). NXP Semiconductors. 11 August 2009. AN10860. Archived (PDF) from the original on 8 December 2023.

onfi.org (Global: low place; English: low place)

"Open NAND Flash Interface Specification" (PDF). Open NAND Flash Interface. 28 December 2006. Archived from the original (PDF) on 27 July 2011. Retrieved 31 July 2010.
A list of ONFi members is available at "Membership - ONFi". Archived from the original on 29 August 2009. Retrieved 21 September 2009.

patents.google.com (Global: 1,182^nd place; English: 725^th place)

GB1517925A, "Storage field effect transistors", issued 19 July 1978
Simko, Richard T. (17 March 1977). "Electrically programmable and electrically erasable MOS memory cell".
Frohman-Bentchkowsky, Dov; Mar, Jerry; Perlegos, George; Johnson, William S. (15 December 1978). "Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same".
Semiconductor memory device and method for manufacturing the same

pcgamesn.com (Global: 1,748^th place; English: 1,058^th place)

James, Dave (8 January 2019). "Samsung 860 QVO review: the first QLC SATA SSD, but it can't topple TLC yet". PCGamesN. Archived from the original on 21 November 2023.

pcworld.com (Global: 1,317^th place; English: 873^rd place)

https://www.pcworld.com/article/225370/look_out_for_the_256gb_thumb_drive_and_the_128gb_tablet.html^{[dead link]}; "Kingston outs the first 256GB flash drive". 20 July 2009. Archived from the original on 8 July 2017. Retrieved 28 August 2017. 20 July 2009, Kingston DataTraveler 300 is 256 GB.

pdsw.org (Global: low place; English: low place)

Master, Neal; Andrews, Mathew; Hick, Jason; Canon, Shane; Wright, Nicholas (2010). "Performance analysis of commodity and enterprise class flash devices" (PDF). IEEE Petascale Data Storage Workshop. Archived (PDF) from the original on 6 May 2016.

photoreview.com.au (Global: low place; English: low place)

"SanDisk Begins Mass Production of X4 Flash Memory Chips". 17 February 2012.

phys.org (Global: 1,283^rd place; English: 1,130^th place)

Owano, Nancy (2 December 2012). "Taiwan engineers defeat limits of flash memory". phys.org. Archived from the original on 9 February 2016.
"SanDisk Ships Flash Memory Cards With 64 Gigabit X4 NAND Technology". phys.org.

princeton.edu (Global: 741^st place; English: 577^th place)

"Floating Gate MOS Memory". University of Minnesota. Archived from the original on 8 August 2022.

pudn.com (Global: low place; English: low place)

read.pudn.com

Kawamatus, Tatsuya. "Technology For Managing NAND Flash" (PDF). Hagiwara sys-com co., LTD. Archived from the original (PDF) on 15 May 2018. Retrieved 15 May 2018.

renesas.com (Global: low place; English: low place)

"H8S/2357 Group, H8S/2357F-ZTATTM, H8S/2398F-ZTATTM Hardware Manual". Renesas. October 2004. p. 574. Archived from the original on 9 January 2023. Retrieved 23 January 2012. The flash memory can be reprogrammed up to 100 times.

researchgate.net (Global: 120^th place; English: 125^th place)

James, Dick (May 2014). 3D ICs in the real world. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). Saratoga Springs, NY. pp. 113–119. doi:10.1109/ASMC.2014.6846988. ISBN 978-1-4799-3944-2. ISSN 2376-6697. S2CID 42565898.
Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000). "Bake induced charge gain in NOR flash cells". IEEE Electron Device Letters. 21 (4): 184–186. Bibcode:2000IEDL...21..184F. doi:10.1109/55.830976. ISSN 1558-0563. S2CID 24724751.
Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2010). "Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories". IEICE Transactions on Electronics. 93 (3): 317–323. Bibcode:2010IEITE..93..317Y. doi:10.1587/transele.E93.C.317.

reuters.com (Global: 49^th place; English: 47^th place)

Jin, Hyunjoo; Nellis, Stephen; Hu, Krystal; Bera, Ayanti; Lee, Joyce (20 October 2020). Coates, Stephen (ed.). "South Korea's SK Hynix to buy Intel's NAND business for $9 billion". Reuters. Archived from the original on 2 November 2023.
"SK Hynix completes first phase of $9 bln Intel NAND business buy". Reuters. 29 December 2021. Retrieved 27 June 2022.

samsung.com (Global: 2,554^th place; English: 2,045^th place)

samsung.com

"History". Samsung Electronics. Samsung. Retrieved 19 June 2019.
"Samsung Introduces World's First 3D V-NAND Based SSD for Enterprise Applications" (Press release). Samsung. 13 August 2013. Archived from the original on 14 April 2019.
"Samsung V-NAND technology" (PDF). Samsung. September 2014. Archived from the original (PDF) on 27 March 2016. Retrieved 27 March 2016.
"Samsung 32GB USB 3.0 Flash Drive FIT MUF-32BB/AM". Archived from the original on 3 February 2016. Retrieved 3 February 2016.
"Samsung Electronics Launches the World's First PCs with NAND Flash-based Solid State Disk". Press Release. Samsung. 24 May 2006. Archived from the original on 20 December 2008. Retrieved 30 November 2008.

news.samsung.com

"Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory" (Press release). Samsung. 9 October 2014. Archived from the original on 30 March 2023.
"Samsung Electronics Starts Mass Production of Industry's First 4-bit Consumer SSD" (Press release). Samsung. 7 August 2018. Archived from the original on 2 November 2023.
"Samsung Breaks Terabyte Threshold for Smartphone Storage with Industry's First 1TB Embedded Universal Flash Storage" (Press release). Samsung. 30 January 2019. Archived from the original on 30 November 2023. Retrieved 13 July 2019.

semiconductor.samsung.com

"History: Continuing the legacy 2000-2009". Samsung Semiconductor. Samsung. Archived from the original on 1 December 2023. Retrieved 25 June 2019.

sandisk.com (Global: low place; English: low place)

"Western Digital Breaks Boundaries with World's Highest-Capacity microSD Card" (Press release). Berlin: SanDisk. 31 August 2017. Archived from the original on 1 September 2017. Retrieved 2 September 2017.
"SanDisk Extreme PRO SDHC/SDXC UHS-I Memory Card". Archived from the original on 27 January 2016. Retrieved 3 February 2016.
"SanDisk Announces the 12-Gigabyte microSDHC Card - the World's Largest Capacity Card for Mobile Phones" (Press release). Las Vegas, Nevada: SanDisk. 7 January 2008. 4079. Archived from the original on 19 December 2008.
"SanDisk UltraII Line Picks Up Speed and Boosts Capacity with New 32- AND 16-Gigabyte SDHC and 8GB SDHC Plus Cards" (Press release). Las Vegas, Nevada: SanDisk. 31 January 2008. 4091. Archived from the original on 19 December 2008.

seagate.com (Global: low place; English: low place)

Reinsel, David; Gantz, John; Rydning, John (November 2018). "IDC White Paper: The Digitization of the World" (PDF). Seagate Technology. International Data Corporation. p. 14. US44413318. Archived (PDF) from the original on 28 November 2023. Retrieved 17 October 2019.

seekingalpha.com (Global: 5,344^th place; English: 3,420^th place)

Tidwell, William (30 August 2016). "Data 9, Storage 1 - NAND Production Falls Behind in the Age of Hyperscale". Seeking Alpha. Micron. Archived from the original on 18 April 2023. Retrieved 17 October 2019.

semanticscholar.org (Global: 11^th place; English: 8^th place)

api.semanticscholar.org

Kim, Chulbum; Cho, Ji-Ho; Jeong, Woopyo; Park, Il-han; Park, Hyun-Wook; Kim, Doo-Hyun; Kang, Daewoon; Lee, Sunghoon; Lee, Ji-Sang; Kim, Wontae; Park, Jiyoon; Ahn, Yang-lo; Lee, Jiyoung; Lee, Jong-Hoon; Kim, Seungbum; Yoon, Hyun-Jun; Yu, Jaedoeg; Choi, Nayoung; Kwon, Yelim; Kim, Nahyun; Jang, Hwajun; Park, Jonghoon; Song, Seunghwan; Park, Yongha; Bang, Jinbae; Hong, Sangki; Jeong, Byunghoon; Kim, Hyun-Jin; Lee, Chunan; et al. (2017). 11.4 a 512Gb 3b/Cell 64-stacked WL 3D V-NAND flash memory. International Solid-State Circuits Conference. San Francisco: IEEE. pp. 202–203. doi:10.1109/ISSCC.2017.7870331. ISBN 978-1-5090-3758-2. ISSN 2376-8606. S2CID 206998691.
Masuoka, F.; Asano, M.; Iwahashi, H.; Komuro, T.; Tanaka, S. (December 1984). A new flash E²PROM cell using triple polysilicon technology. 1984 International Electron Devices Meeting. San Francisco. pp. 464–467. doi:10.1109/IEDM.1984.190752. S2CID 25967023.
James, Dick (May 2014). 3D ICs in the real world. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). Saratoga Springs, NY. pp. 113–119. doi:10.1109/ASMC.2014.6846988. ISBN 978-1-4799-3944-2. ISSN 2376-6697. S2CID 42565898.
Lee, Jang-Sik (18 October 2011). "Review paper: Nano-floating gate memory devices". Electronic Materials Letters. 7 (3). Korean Institute of Metals and Materials: 175–183. Bibcode:2011EML.....7..175L. doi:10.1007/s13391-011-0901-5. S2CID 110503864.
Kodama, N.; Oyama, K.; Shirai, H.; Saitoh, K.; Okazawa, T.; Hokari, Y. (December 1991). A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory. International Electron Devices Meeting. Washington, DC: IEEE. pp. 303–306. doi:10.1109/IEDM.1991.235443. ISBN 0-7803-0243-5. ISSN 0163-1918. S2CID 111203629.
Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000). "Bake induced charge gain in NOR flash cells". IEEE Electron Device Letters. 21 (4): 184–186. Bibcode:2000IEDL...21..184F. doi:10.1109/55.830976. ISSN 1558-0563. S2CID 24724751.
Ishida, Koichi; Yasufuku, Tadashi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (May 2011). "1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD". IEEE Journal of Solid-State Circuits. 46 (6). Institute of Electrical and Electronics Engineers: 1478–1487. Bibcode:2011IJSSC..46.1478I. doi:10.1109/JSSC.2011.2131810. ISSN 1558-173X. S2CID 13701601.
Dube, Belinda Langelihle (2020). "Manufacturing Challenges and Cost Evaluation of New Generation 3D Memories". 2020 China Semiconductor Technology International Conference (CSTIC). pp. 1–3. doi:10.1109/CSTIC49141.2020.9282426. ISBN 978-1-7281-6558-5. S2CID 229376195.
Calabrese, Marcello (May 2013). "Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology". Proceedings of 2013 International Conference on IC Design & Technology (ICICDT). pp. 37–40. doi:10.1109/ICICDT.2013.6563298. ISBN 978-1-4673-4743-3. S2CID 37127243.
Kim, Kinam; Koh, Gwan-Hyeob (16 May 2004). Future memory technology including emerging new memories. 24th International Conference on Microelectronics. Niš, Serbia: Institute of Electrical and Electronics Engineers. pp. 377–384. doi:10.1109/ICMEL.2004.1314646. ISBN 978-0-7803-8166-7. S2CID 40985239.

semiwiki.com (Global: low place; English: low place)

"Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash". linkedin.com. Retrieved 1 June 2022.; "Calculating the Maximum Density and Equivalent 2D Design Rule of 3D NAND Flash". semwiki.com. 21 February 2021. Retrieved 1 June 2022.

si.edu (Global: 340^th place; English: 295^th place)

smithsonianchips.si.edu

"The Flash Memory Market" (PDF). Integrated Circuit Engineering Corporation. 1997. p. 4. Archived (PDF) from the original on 19 April 2023. Retrieved 16 October 2019 – via Smithsonian Institution.
"Japanese Company Profiles" (PDF). Integrated Circuit Engineering Corporation. 1996. Archived from the original (PDF) on 19 April 2023. Retrieved 27 June 2019 – via Smithsonian Institution.
"Worldwide IC Manufacturers" (PDF). Integrated Circuit Engineering Corporation. 1997. Archived from the original (PDF) on 14 August 2023. Retrieved 10 July 2019 – via Smithsonian Institution.

skhynix.com (Global: low place; English: low place)

"History: 2010s". SK Hynix. Archived from the original on 17 May 2021. Retrieved 8 July 2019.

slashgear.com (Global: 7,835^th place; English: 5,254^th place)

"SanDisk ships world's first memory cards with 64 gigabit X4 NAND flash". SlashGear. 13 October 2009. Archived from the original on 18 April 2023. Retrieved 20 June 2019.

slideshare.net (Global: 2,161^st place; English: 2,535^th place)

Matsunobu, Yoshinori (15 April 2010). "SSD Deployment Strategies for MySQL". Archived from the original on 3 March 2016.

snia.org (Global: low place; English: low place)

Thatcher, Jonathan; Coughlin, Tom; Handy, Jim; Ekker, Neal (April 2009). NAND Flash Solid State Storage for the Enterprise, An In-depth Look at Reliability (PDF) (Technical report). Solid State Storage Initiative (SSSI) of the Storage Network Industry Association (SNIA). Archived (PDF) from the original on 14 October 2011. Retrieved 6 December 2011.
Thatcher, Jonathan (18 August 2009). "NAND Flash Solid State Storage Performance and Capability – an In-depth Look" (PDF). SNIA. Archived (PDF) from the original on 7 September 2012. Retrieved 28 August 2012.

softpedia.com (Global: 3,250^th place; English: 2,302^nd place)

news.softpedia.com

"Samsung's SSD Notebook". 22 August 2006. Archived from the original on 15 October 2018. Retrieved 15 October 2018.

sonoma.edu (Global: low place; English: 7,858^th place)

bob.cs.sonoma.edu

"NAND and NOR Gates". bob.cs.sonoma.edu. Retrieved 3 November 2024.

sony.jp (Global: low place; English: low place)

"文庫本サイズの「VAIO type U」フラッシュメモリー搭載モデル発売" [Release of the "VAIO type U" paperback-sized model with flash memory] (Press release) (in Japanese). Sony. 27 June 2006. Archived from the original on 10 May 2023.

spansion.com (Global: low place; English: low place)

"AMD DL160 and DL320 Series Flash: New Densities, New Features" (PDF). AMD. July 2003. 22271A. Archived from the original (PDF) on 24 September 2015. Retrieved 13 November 2014. The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee.
Richard Blish. "Dose Minimization During X-ray Inspection of Surface-Mounted Flash ICs" Archived 20 February 2016 at the Wayback Machine. p. 1.
Richard Blish. "Impact of X-Ray Inspection on Spansion Flash Memory" Archived 4 March 2016 at the Wayback Machine
Spansion. "What Types of ECC Should Be Used on Flash Memory?" Archived 4 March 2016 at the Wayback Machine. 2011.

stackpathcdn.com (Global: low place; English: low place)

z3d9b7u8.stackpathcdn.com

"e.MMC 4.41 Specification compatibility Rev 1.1" (PDF). Samsung Electronics. December 2011. Archived (PDF) from the original on 4 December 2023. Retrieved 15 July 2019.

statista.com (Global: 776^th place; English: 844^th place)

"NAND Flash manufacturers' market share 2019". Statista. Retrieved 3 July 2019.

storagesearch.com (Global: low place; English: low place)

"SSD endurance myths and legends articles on StorageSearch.com". StorageSearch.com.
"Flash Solid State Disks – Inferior Technology or Closet Superstar?". STORAGEsearch. Archived from the original on 24 December 2008. Retrieved 30 November 2008.

techcrunch.com (Global: 187^th place; English: 146^th place)

https://www.pcworld.com/article/225370/look_out_for_the_256gb_thumb_drive_and_the_128gb_tablet.html^{[dead link]}; "Kingston outs the first 256GB flash drive". 20 July 2009. Archived from the original on 8 July 2017. Retrieved 28 August 2017. 20 July 2009, Kingston DataTraveler 300 is 256 GB.

techinsights.com (Global: low place; English: low place)

"Technology Roadmap for NAND Flash Memory". techinsights. April 2013. Archived from the original on 9 January 2015. Retrieved 9 January 2015.
"Technology Roadmap for NAND Flash Memory". techinsights. April 2014. Archived from the original on 9 January 2015. Retrieved 9 January 2015.
"NAND Flash Memory Roadmap" (PDF). TechInsights. June 2016. Archived from the original (PDF) on 25 June 2018. Retrieved 25 June 2018.

techpowerup.com (Global: 4,960^th place; English: 3,052^nd place)

https://www.techpowerup.com/ssd-specs/crucial-p3-plus-1-tb.d825
https://www.techpowerup.com/ssd-specs/crucial-p3-plus-1-tb.d825
"Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory" (Press release). Toshiba. 28 June 2017. Archived from the original on 2 November 2023. Retrieved 20 June 2019 – via TechPowerUp.

techspot.com (Global: 7,139^th place; English: 4,608^th place)

Potoroaca, Adrian (20 April 2020). "Samsung said to be developing industry's first 160-layer NAND flash memory chip". TechSpot. Archived from the original on 2 November 2023.

techtarget.com (Global: 2,435^th place; English: 1,699^th place)

Sheldon, Robert (19 June 2023). "Charge trap technology advantages for 3D NAND flash drives". SearchStorage. Archived from the original on 9 August 2023.

tgdaily.com (Global: low place; English: low place)

Gruener, Wolfgang (11 September 2006). "Samsung announces 40 nm Flash, predicts 20 nm devices". TG Daily. Archived from the original on 23 March 2008. Retrieved 30 November 2008.
Hajdarbegovic, Nermin (17 April 2013). "NAND memory market rockets". TG Daily. Archived from the original on 8 February 2016. Retrieved 18 April 2013.

theregister.co.uk (Global: 1,216^th place; English: 797^th place)

Sharwood, Simon (3 December 2012). "Flash memory made immortal by fiery heat". The Register. Archived from the original on 13 September 2017.
Mellor, Chris (28 February 2018). "Who was the storage dollar daddy in 2017? S. S. D". The Register. Archived from the original on 10 November 2023. Retrieved 17 October 2019.

theregister.com (Global: 3,700^th place; English: 2,360^th place)

Mellor, Chris. "NAND we'll send foreign tech packing, says China of Xtacking: DRAM-speed... but light on layer-stacking". www.theregister.com.
Mellor, Chris. "What the PUC: SK Hynix next to join big boys in 96-layer 3D NAND land". www.theregister.com.
Mellor, Chris. "Look who's avoided getting chatty about XPoint again. Micron... let's get non-volatile". www.theregister.com.

ti.com (Global: 4,228^th place; English: 2,818^th place)

"Serial Presence Detect - Technical Reference" (PDF). Texas Instruments. January 1998. SMMU001. Archived (PDF) from the original on 4 December 2023.

tomshardware.co.uk (Global: low place; English: low place)

Parrish, Kevin (11 April 2013). "Samsung Mass Producing 128Gb 3-bit MLC NAND Flash". Tom's Hardware. Archived from the original on 21 June 2019. Retrieved 21 June 2019.

tomshardware.com (Global: 2,976^th place; English: 1,939^th place)

Alcorn, Paul (26 July 2022). "Micron Takes Lead With 232-Layer NAND Flash, up to 2TB per Chip Package". Tom's Hardware. Retrieved 31 May 2024.
Ramseyer, Chris (9 June 2017). "Flash Industry Trends Could Lead Users Back to Spinning Disks". Tom's Hardware. Archived from the original on 6 November 2023. Retrieved 11 June 2017.
Webster, Sean (19 October 2018). "Samsung Announces QLC SSDs And Second-Gen Z-NAND". Tom's Hardware. Archived from the original on 2 November 2023.
Perry, Douglas (25 July 2012). "Princeton: Replacing RAM with Flash Can Save Massive Power". Tom's Hardware. Archived from the original on 6 November 2023.

toshiba-memory.com (Global: low place; English: low place)

business.toshiba-memory.com

"SLC NAND Flash Memory | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"Serial Interface NAND | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"BENAND | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"SLC NAND Flash Memory | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.

toshiba.co.jp (Global: 9,918^th place; English: low place)

"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology" (Press release). Toshiba. 11 February 2009. PR1102. Archived from the original on 19 April 2023. Retrieved 21 June 2019.
"Toshiba : News Release (31 Aug, 2010): Toshiba launches 24nm process NAND flash memory". Toshiba.co.jp.

toshiba.com (Global: low place; English: low place)

toshiba.com

"Toshiba announces 0.13 micron 1Gb monolithic NAND featuring large block size for improved write/erase speed performance" (Press release). Toshiba. 9 September 2002. Archived from the original on 11 March 2006. Retrieved 11 March 2006.
"Toshiba Introduces Double Data Rate Toggle Mode NAND in MLC And SLC Configurations" (Press release). Irvine, Calif.: Toshiba. 11 August 2010. Archived from the original on 25 December 2015.
"SLC NAND". Toshiba.com. Archived from the original on 1 September 2018.
"Toshiba announces 1 gigabyte CompactFlash™ card" (Press release). Toshiba. 9 September 2002. Archived from the original on 11 March 2006. Retrieved 11 March 2006.

flash25.toshiba.com

"Toshiba: Inventor of Flash Memory". Toshiba. Archived from the original on 20 June 2019. Retrieved 20 June 2019.

tuwien.ac.at (Global: low place; English: low place)

iue.tuwien.ac.at

Windbacher, T. "2.1.1 Flash Memory". Engineering Gate Stacks for Field-Effect Transistors. Archived from the original on 9 November 2023.

usitc.gov (Global: low place; English: low place)

Yinug, Christopher Falan (July 2007). "The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns" (PDF). Journal of International Commerce and Economics. Archived from the original (PDF) on 29 May 2008. Retrieved 19 April 2008.

uspto.gov (Global: 1,459^th place; English: 991^st place)

patft.uspto.gov

Eitan, Boaz. "US Patent 5,768,192: Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping". US Patent & Trademark Office. Archived from the original on 22 February 2020. Retrieved 22 May 2012.

wdc.com (Global: low place; English: low place)

"NAND Evolution and its Effects on Solid State Drive Useable Life" (PDF). Western Digital. 2009. Archived from the original (PDF) on 12 November 2011. Retrieved 22 April 2012.

web.archive.org (Global: 1^st place; English: 1^st place)

"A Flash Storage Technical and Economic Primer". FlashStorage.com. 30 March 2015. Archived from the original on 20 July 2015.
"Flash Memory Guide" (PDF). Kingston Technology. 2012. MKF-283US. Archived (PDF) from the original on 19 October 2023. Retrieved 4 December 2023.
Bauer, Roderick (6 March 2018). "HDD vs SSD: What Does the Future for Storage Hold?". Backblaze. Archived from the original on 22 December 2022.
"Memory Module Serial Presence-Detect Introduction" (PDF). Micron Technology. TN-04-42. Archived (PDF) from the original on 26 July 2022. Retrieved 1 June 2022.
"Serial Presence Detect - Technical Reference" (PDF). Texas Instruments. January 1998. SMMU001. Archived (PDF) from the original on 4 December 2023.
Shilov, Anton (30 January 2019). "Samsung Starts Production of 1 TB eUFS 2.1 Storage for Smartphones". AnandTech. Archived from the original on 2 November 2023.
Shilov, Anton (5 December 2017). "Samsung Starts Production of 512 GB UFS NAND Flash Memory: 64-Layer V-NAND, 860 MB/s Reads". AnandTech. Archived from the original on 3 November 2023.
Tyson, Mark. "Samsung enables 1TB eUFS 2.1 smartphones". Hexus. Archived from the original on 23 April 2023.
"Not just a flash in the pan". The Economist. Reuters. 11 March 2006. Archived from the original on 21 November 2023. Retrieved 10 September 2019.
"1971: Reusable semiconductor ROM introduced". The Storage Engine. Computer History Museum. 11 June 2018. Archived from the original on 10 August 2023. Retrieved 19 June 2019.
Fulford, Adel (24 June 2002). "Unsung hero". Forbes. Archived from the original on 3 March 2008. Retrieved 18 March 2008.
Tyson, Jeff (29 August 2000). "How ROM Works". HowStuffWorks. Archived from the original on 2 December 2023. Retrieved 10 September 2019.
"Toshiba: Inventor of Flash Memory". Toshiba. Archived from the original on 20 June 2019. Retrieved 20 June 2019.
Tal, Arie (February 2002). "NAND vs. NOR flash technology: The designer should weigh the options when using flash memory". Archived from the original on 28 July 2010. Retrieved 31 July 2010.
"H8S/2357 Group, H8S/2357F-ZTATTM, H8S/2398F-ZTATTM Hardware Manual". Renesas. October 2004. p. 574. Archived from the original on 9 January 2023. Retrieved 23 January 2012. The flash memory can be reprogrammed up to 100 times.
"AMD DL160 and DL320 Series Flash: New Densities, New Features" (PDF). AMD. July 2003. 22271A. Archived from the original (PDF) on 24 September 2015. Retrieved 13 November 2014. The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee.
Bridgman, Aston (28 October 1997). "NEC and SanDisk Develop 80Mb Flash Memory" (Press release). NEC. 97/10/28-01. Archived from the original on 18 October 2020.
"Memory". STOL (Semiconductor Technology Online). Archived from the original on 2 November 2023. Retrieved 25 June 2019.
"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology" (Press release). Toshiba. 11 February 2009. PR1102. Archived from the original on 19 April 2023. Retrieved 21 June 2019.
"SanDisk ships world's first memory cards with 64 gigabit X4 NAND flash". SlashGear. 13 October 2009. Archived from the original on 18 April 2023. Retrieved 20 June 2019.
Wong, Bill (15 April 2013). "Interview: Spansion's CTO Talks About Embedded Charge Trap NOR Flash Technology". Electronic Design. Archived from the original on 4 December 2023.
Aravindan, Avinash (13 November 2018). "Flash 101: Types of NAND Flash". embedded.com. Archived from the original on 6 November 2023.
Sheldon, Robert (19 June 2023). "Charge trap technology advantages for 3D NAND flash drives". SearchStorage. Archived from the original on 9 August 2023.
Eitan, Boaz. "US Patent 5,768,192: Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping". US Patent & Trademark Office. Archived from the original on 22 February 2020. Retrieved 22 May 2012.
Hruska, Joel (6 August 2013). "Samsung produces first 3D NAND, aims to boost densities, drive lower cost per GB". ExtremeTech. Archived from the original on 2 November 2023. Retrieved 4 July 2019.
Melanson, Donald (12 June 2007). "Toshiba announces new "3D" NAND flash technology". Engadget. Archived from the original on 17 December 2022. Retrieved 10 July 2019.
"Samsung Introduces World's First 3D V-NAND Based SSD for Enterprise Applications" (Press release). Samsung. 13 August 2013. Archived from the original on 14 April 2019.
Clarke, Peter (8 August 2013). "Samsung Confirms 24 Layers in 3D NAND". EE Times. Archived from the original on 19 February 2020.
"Toshiba commercializes Industry's Highest Capacity Embedded NAND Flash Memory for Mobile Consumer Products" (Press release). Toshiba. 17 April 2007. PR1702. Archived from the original on 18 May 2022. Retrieved 23 November 2010.
"Hynix Surprises NAND Chip Industry". The Korea Times. 5 September 2007. Archived from the original on 21 November 2023. Retrieved 8 July 2019.
"Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices" (Press release). Toshiba. 7 August 2008. PR0701. Archived from the original on 7 November 2023. Retrieved 21 June 2019.
"Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules" (Press release). Toshiba. 17 June 2010. PR1701. Archived from the original on 6 November 2023. Retrieved 21 June 2019.
Tallis, Billy. "2021 NAND Flash Updates from ISSCC: The Leaning Towers of TLC and QLC". www.anandtech.com. Archived from the original on 19 February 2021.
"Western Digital Breaks Boundaries with World's Highest-Capacity microSD Card" (Press release). Berlin: SanDisk. 31 August 2017. Archived from the original on 1 September 2017. Retrieved 2 September 2017.
Bradley, Tony (31 August 2017). "Expand Your Mobile Storage With New 400GB microSD Card From SanDisk". Forbes. Archived from the original on 1 September 2017. Retrieved 2 September 2017.
Manners, David (30 January 2019). "Samsung makes 1TB flash eUFS module". Electronics Weekly. Archived from the original on 10 February 2023. Retrieved 23 June 2019.
Tallis, Billy (17 October 2018). "Samsung Shares SSD Roadmap for QLC NAND And 96-layer 3D NAND". AnandTech. Archived from the original on 6 November 2023. Retrieved 27 June 2019.
Basinger, Matt (18 January 2007), PSoC Designer Device Selection Guide (PDF), AN2209, archived from the original on 31 October 2009, The PSoC ... utilizes a unique Flash process: SONOS
Windbacher, T. "2.1.1 Flash Memory". Engineering Gate Stacks for Field-Effect Transistors. Archived from the original on 9 November 2023.
"Floating Gate MOS Memory". University of Minnesota. Archived from the original on 8 August 2022.
Shimpi, Anand Lal (30 September 2011). "The Intel SSD 710 (200GB) Review". AnandTech. Archived from the original on 2 November 2023.
"Flash Memory Reliability, Life & Wear". Electronics Notes. Archived from the original on 2 November 2023.
Vättö, Kristian (23 February 2012). "Understanding TLC NAND". AnandTech. Archived from the original on 2 November 2023.
"Solid State bit density, and the Flash Memory Controller". hyperstone.com. 17 April 2018. Archived from the original on 9 June 2023. Retrieved 29 May 2018.
Yasufuku, Tadashi; Ishida, Koichi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (2009). "Inductor design of 20-V boost converter for low power 3D solid state drive with NAND flash memories". Proceedings of the 2009 ACM/IEEE international symposium on Low power electronics and design. pp. 87–92. doi:10.1145/1594233.1594253. ISBN 978-1-60558-684-7. Archived from the original on 5 March 2016.
Micheloni, Rino; Marelli, Alessia; Eshghi, Kam (2012), Inside Solid State Drives (SSDs), Springer, Bibcode:2013issd.book.....M, ISBN 9789400751460, archived from the original on 9 February 2017
Micheloni, Rino; Crippa, Luca (2010), Inside NAND Flash Memories, Springer, ISBN 9789048194315, archived from the original on 9 February 2017 In particular, Takeuchi, K. (2010). "Low power 3D-integrated SSD". Inside NAND Flash Memories. pp. 515–536. doi:10.1007/978-90-481-9431-5_18. ISBN 978-90-481-9430-8.
Mozel, Tracey (2009), CMOSET Fall 2009 Circuits and Memories Track Presentation Slides, CMOS Emerging Technologies, ISBN 9781927500217, archived from the original on 9 February 2017
A. H. Johnston, "Space Radiation Effects in Advanced Flash Memories" Archived 4 March 2016 at the Wayback Machine. NASA Electronic Parts and Packaging Program (NEPP). 2001. "... internal transistors used for the charge pump and erase/write control have much thicker oxides because of the requirement for high voltage. This causes flash devices to be considerably more sensitive to total dose damage compared to other ULSI technologies. It also implies that write and erase functions will be the first parameters to fail from total dose. ... Flash memories will work at much higher radiation levels in the read mode. ... The charge pumps that are required to generate the high voltage for erasing and writing are usually the most sensitive circuit functions, usually failing below 10 krad(SI)."
Zitlaw, Cliff (2 May 2011). "The Future of NOR Flash Memory". Memory Designline. UBM Media. Archived from the original on 1 June 2023. Retrieved 3 May 2011.
"NAND Flash Controllers - The key to endurance and reliability". hyperstone.com. 7 June 2018. Archived from the original on 5 June 2023. Retrieved 1 June 2022.
"Samsung moves into mass production of 3D flash memory". Gizmag.com. 27 August 2013. Archived from the original on 27 August 2013. Retrieved 27 August 2013.
"Samsung Electronics Starts Mass Production of Industry First 3-bit 3D V-NAND Flash Memory" (Press release). Samsung. 9 October 2014. Archived from the original on 30 March 2023.
"Samsung V-NAND technology" (PDF). Samsung. September 2014. Archived from the original (PDF) on 27 March 2016. Retrieved 27 March 2016.
Tallis, Billy (9 November 2020). "Micron Announces 176-layer 3D NAND". AnandTech. Archived from the original on 2 November 2023.
Potoroaca, Adrian (20 April 2020). "Samsung said to be developing industry's first 160-layer NAND flash memory chip". TechSpot. Archived from the original on 2 November 2023.
Thatcher, Jonathan; Coughlin, Tom; Handy, Jim; Ekker, Neal (April 2009). NAND Flash Solid State Storage for the Enterprise, An In-depth Look at Reliability (PDF) (Technical report). Solid State Storage Initiative (SSSI) of the Storage Network Industry Association (SNIA). Archived (PDF) from the original on 14 October 2011. Retrieved 6 December 2011.
"Difference between SLC, MLC, TLC and 3D NAND in USB flash drives, SSDs and memory cards". Kingston Technology. February 2022. Archived from the original on 28 November 2023.
Bordner, Kirstin (17 December 2008). "Micron Collaborates with Sun Microsystems to Extend Lifespan of Flash-Based Storage, Achieves One Million Write Cycles" (Press release). Boise, Idaho: Micron Technology. Archived from the original on 20 March 2022.
Owano, Nancy (2 December 2012). "Taiwan engineers defeat limits of flash memory". phys.org. Archived from the original on 9 February 2016.
Sharwood, Simon (3 December 2012). "Flash memory made immortal by fiery heat". The Register. Archived from the original on 13 September 2017.
Wong, Raymond (4 December 2012). "Flash memory breakthrough could lead to even more reliable data storage". Yahoo! News. Archived from the original on 2 November 2023.
"NAND Flash Design and Use Considerations Introduction" (PDF). Micron Technology. April 2010. TN-29-17. Archived (PDF) from the original on 3 March 2022. Retrieved 29 July 2011.
Kawamatus, Tatsuya. "Technology For Managing NAND Flash" (PDF). Hagiwara sys-com co., LTD. Archived from the original (PDF) on 15 May 2018. Retrieved 15 May 2018.
Cooke, Jim (August 2007). The Inconvenient Truths of NAND Flash Memory (PDF). Flash Memory Summit 2007. Micron Technology. Archived (PDF) from the original on 15 February 2018.
Richard Blish. "Dose Minimization During X-ray Inspection of Surface-Mounted Flash ICs" Archived 20 February 2016 at the Wayback Machine. p. 1.
Richard Blish. "Impact of X-Ray Inspection on Spansion Flash Memory" Archived 4 March 2016 at the Wayback Machine
"SanDisk Extreme PRO SDHC/SDXC UHS-I Memory Card". Archived from the original on 27 January 2016. Retrieved 3 February 2016.
"Samsung 32GB USB 3.0 Flash Drive FIT MUF-32BB/AM". Archived from the original on 3 February 2016. Retrieved 3 February 2016.
Spansion. "What Types of ECC Should Be Used on Flash Memory?" Archived 4 March 2016 at the Wayback Machine. 2011.
"Toshiba announces 0.13 micron 1Gb monolithic NAND featuring large block size for improved write/erase speed performance" (Press release). Toshiba. 9 September 2002. Archived from the original on 11 March 2006. Retrieved 11 March 2006.
"Small-Block vs. Large-Block NAND flash Devices" (PDF). TN-29-07. Archived from the original on 29 October 2023.
"LPC313x NAND flash data and bad block management" (PDF). NXP Semiconductors. 11 August 2009. AN10860. Archived (PDF) from the original on 8 December 2023.
Thatcher, Jonathan (18 August 2009). "NAND Flash Solid State Storage Performance and Capability – an In-depth Look" (PDF). SNIA. Archived (PDF) from the original on 7 September 2012. Retrieved 28 August 2012.
"Samsung ECC algorithm" (PDF). Samsung. June 2008. Archived (PDF) from the original on 12 October 2008. Retrieved 15 August 2008.
"Open NAND Flash Interface Specification" (PDF). Open NAND Flash Interface. 28 December 2006. Archived from the original (PDF) on 27 July 2011. Retrieved 31 July 2010.
A list of ONFi members is available at "Membership - ONFi". Archived from the original on 29 August 2009. Retrieved 21 September 2009.
"Toshiba Introduces Double Data Rate Toggle Mode NAND in MLC And SLC Configurations" (Press release). Irvine, Calif.: Toshiba. 11 August 2010. Archived from the original on 25 December 2015.
"Dell, Intel And Microsoft Join Forces To Increase Adoption of NAND-Based Flash Memory in PC Platforms" (Press release). Redmond, Wash: Microsoft. 30 May 2007. Archived from the original on 3 June 2023. Retrieved 12 August 2014.
NAND Flash 101: An Introduction to NAND Flash and How to Design It in to Your Next Product (PDF), Micron, pp. 2–3, TN-29-19, archived from the original (PDF) on 4 June 2016
"The Fundamentals of Flash Memory Storage". 20 March 2012. Archived from the original on 4 January 2017. Retrieved 3 January 2017.
"SLC NAND Flash Memory | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"SLC NAND". Toshiba.com. Archived from the original on 1 September 2018.
"Serial Interface NAND | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"BENAND | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
"SLC NAND Flash Memory | TOSHIBA MEMORY | Europe(EMEA)". business.toshiba-memory.com. Archived from the original on 1 January 2019. Retrieved 1 January 2019.
Tallis, Billy. "The Samsung 983 ZET (Z-NAND) SSD Review: How Fast Can Flash Memory Get?". AnandTech.com. Archived from the original on 19 February 2019.
Vättö, Kristian. "Testing Samsung 850 Pro Endurance & Measuring V-NAND Die Size". AnandTech. Archived from the original on 26 June 2017. Retrieved 11 June 2017.
Vättö, Kristian. "Samsung SSD 845DC EVO/PRO Performance Preview & Exploring IOPS Consistency". AnandTech. p. 3. Archived from the original on 22 October 2016. Retrieved 11 June 2017.
Vättö, Kristian. "Samsung SSD 850 EVO (120GB, 250GB, 500GB & 1TB) Review". AnandTech. p. 4. Archived from the original on 31 May 2017. Retrieved 11 June 2017.
Vättö, Kristian. "Samsung SSD 845DC EVO/PRO Performance Preview & Exploring IOPS Consistency". AnandTech. p. 2. Archived from the original on 22 October 2016. Retrieved 11 June 2017.
Ramseyer, Chris (9 June 2017). "Flash Industry Trends Could Lead Users Back to Spinning Disks". Tom's Hardware. Archived from the original on 6 November 2023. Retrieved 11 June 2017.
"PBlaze5 700". memblaze.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
"PBlaze5 900". memblaze.com. Archived from the original on 28 March 2019. Retrieved 28 March 2019.
"PBlaze5 910/916 series NVMe SSD". memblaze.com. Archived from the original on 27 March 2019. Retrieved 26 March 2019.
"PBlaze5 510/516 series NVMe™ SSD". memblaze.com. Archived from the original on 27 March 2019. Retrieved 26 March 2019.
Evans, Chris (7 November 2018). "QLC NAND - What can we expect from the technology?". Archived from the original on 2 November 2023.
Dicker, Derek (5 November 2018). "Say Hello: Meet the World's First QLC SSD, the Micron 5210 ION" (Press release). Micron Technology. Archived from the original on 30 January 2019.
"QLC NAND". Micron.com. Archived from the original on 30 January 2019.
Tallis, Billy. "The Intel SSD 660p SSD Review: QLC NAND Arrives For Consumer SSDs". AnandTech. Archived from the original on 2 November 2023.
Webster, Sean (19 October 2018). "Samsung Announces QLC SSDs And Second-Gen Z-NAND". Tom's Hardware. Archived from the original on 2 November 2023.
James, Dave (8 January 2019). "Samsung 860 QVO review: the first QLC SATA SSD, but it can't topple TLC yet". PCGamesN. Archived from the original on 21 November 2023.
"Samsung Electronics Starts Mass Production of Industry's First 4-bit Consumer SSD" (Press release). Samsung. 7 August 2018. Archived from the original on 2 November 2023.
Jin, Hyunjoo; Nellis, Stephen; Hu, Krystal; Bera, Ayanti; Lee, Joyce (20 October 2020). Coates, Stephen (ed.). "South Korea's SK Hynix to buy Intel's NAND business for $9 billion". Reuters. Archived from the original on 2 November 2023.
"NAND Evolution and its Effects on Solid State Drive Useable Life" (PDF). Western Digital. 2009. Archived from the original (PDF) on 12 November 2011. Retrieved 22 April 2012.
"Flash vs DRAM follow-up: chip stacking". The Daily Circuit. 22 April 2012. Archived from the original on 24 November 2012. Retrieved 22 April 2012.
"Computer data storage unit conversion - non-SI quantity". Archived from the original on 8 May 2015. Retrieved 20 May 2015.
Shilov, Anton (12 September 2005). "Samsung Unveils 2GB Flash Memory Chip". X-bit labs. Archived from the original on 24 December 2008. Retrieved 30 November 2008.
Gruener, Wolfgang (11 September 2006). "Samsung announces 40 nm Flash, predicts 20 nm devices". TG Daily. Archived from the original on 23 March 2008. Retrieved 30 November 2008.
"SanDisk Announces the 12-Gigabyte microSDHC Card - the World's Largest Capacity Card for Mobile Phones" (Press release). Las Vegas, Nevada: SanDisk. 7 January 2008. 4079. Archived from the original on 19 December 2008.
"SanDisk UltraII Line Picks Up Speed and Boosts Capacity with New 32- AND 16-Gigabyte SDHC and 8GB SDHC Plus Cards" (Press release). Las Vegas, Nevada: SanDisk. 31 January 2008. 4091. Archived from the original on 19 December 2008.
https://www.pcworld.com/article/225370/look_out_for_the_256gb_thumb_drive_and_the_128gb_tablet.html^{[dead link]}; "Kingston outs the first 256GB flash drive". 20 July 2009. Archived from the original on 8 July 2017. Retrieved 28 August 2017. 20 July 2009, Kingston DataTraveler 300 is 256 GB.
Borghino, Dario (31 March 2015). "3D flash technology moves forward with 10 TB SSDs and the first 48-layer memory cells". Gizmag. Archived from the original on 18 May 2015. Retrieved 31 March 2015.
"Samsung Launches Monster 4TB 850 EVO SSD Priced at $1,499 | Custom PC Review". Custom PC Review. 13 July 2016. Archived from the original on 9 October 2016. Retrieved 8 October 2016.
"Samsung Unveils 32TB SSD Leveraging 4th Gen 64-Layer 3D V-NAND | Custom PC Review". Custom PC Review. 11 August 2016. Archived from the original on 9 October 2016. Retrieved 8 October 2016.
Master, Neal; Andrews, Mathew; Hick, Jason; Canon, Shane; Wright, Nicholas (2010). "Performance analysis of commodity and enterprise class flash devices" (PDF). IEEE Petascale Data Storage Workshop. Archived (PDF) from the original on 6 May 2016.
Ng, Jansen. "Samsung Confirms 32nm Flash Problems, Working on New SSD Controller". dailytech.com. Archived from the original on 4 March 2016. Retrieved 3 October 2009.
Lyth0s (17 March 2011). "SSD vs. HDD". elitepcbuilding.com. Archived from the original on 20 August 2011. Retrieved 11 July 2011.
"Flash Solid State Disks – Inferior Technology or Closet Superstar?". STORAGEsearch. Archived from the original on 24 December 2008. Retrieved 30 November 2008.
Matsunobu, Yoshinori (15 April 2010). "SSD Deployment Strategies for MySQL". Archived from the original on 3 March 2016.
"Samsung Electronics Launches the World's First PCs with NAND Flash-based Solid State Disk". Press Release. Samsung. 24 May 2006. Archived from the original on 20 December 2008. Retrieved 30 November 2008.
"Samsung's SSD Notebook". 22 August 2006. Archived from the original on 15 October 2018. Retrieved 15 October 2018.
"文庫本サイズの「VAIO type U」フラッシュメモリー搭載モデル発売" [Release of the "VAIO type U" paperback-sized model with flash memory] (Press release) (in Japanese). Sony. 27 June 2006. Archived from the original on 10 May 2023.
"Sony Vaio UX UMPC – now with 32 GB Flash memory | NBnews.info. Laptop and notebook news, reviews, test, specs, price | Каталог ноутбуков, ультрабуков и планшетов, новости, обзоры". Archived from the original on 28 June 2022. Retrieved 7 November 2018.
Perry, Douglas (25 July 2012). "Princeton: Replacing RAM with Flash Can Save Massive Power". Tom's Hardware. Archived from the original on 6 November 2023.
"Understanding Life Expectancy of Flash Storage". www.ni.com. 23 July 2020. Archived from the original on 1 December 2023. Retrieved 19 December 2020.
"8-Bit AVR Microcontroller ATmega32A Datasheet Complete" (PDF). 19 February 2016. p. 18. Archived from the original (PDF) on 9 April 2016. Retrieved 29 May 2016. Reliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85 °C or 100 years at 25 °C
"On Hacking MicroSD Cards". bunnie's blog. 29 December 2013. Archived from the original on 2 November 2023.
"Data Retention in MLC NAND Flash Memory: Characterization, Optimization, and Recovery" (PDF). 27 January 2015. p. 10. Archived (PDF) from the original on 7 October 2016. Retrieved 27 April 2016.
Yinug, Christopher Falan (July 2007). "The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns" (PDF). Journal of International Commerce and Economics. Archived from the original (PDF) on 29 May 2008. Retrieved 19 April 2008.
Hajdarbegovic, Nermin (17 April 2013). "NAND memory market rockets". TG Daily. Archived from the original on 8 February 2016. Retrieved 18 April 2013.
Owen, Malcolm. "Power outage may have ruined 15 exabytes of WD and Toshiba flash storage". AppleInsider. Archived from the original on 2 November 2023.
Kwan, Campbell. "Former Toshiba memory business to rebrand as Kioxia". ZDNet. Archived from the original on 4 October 2023. Retrieved 12 July 2023.
"The Flash Memory Market" (PDF). Integrated Circuit Engineering Corporation. 1997. p. 4. Archived (PDF) from the original on 19 April 2023. Retrieved 16 October 2019 – via Smithsonian Institution.
Sze, Simon Min. "Evolution of Nonvoltatile Semiconductor Memory: From Invention to Nanocrystal Memory" (PDF). CERN. National Yang Ming Chiao Tung University. p. 41. Archived (PDF) from the original on 2 November 2023. Retrieved 22 October 2019.
Handy, Jim (26 May 2014). "How Many Transistors Have Ever Shipped?". Forbes. Archived from the original on 2 November 2023. Retrieved 21 October 2019.
"Markit View: Major events in the 2008 DRAM industry; End application demand remains weak, 2009 NAND Flash demand bit growth being revised down to 81%". DRAMeXchange. 30 December 2008. Archived from the original on 15 April 2023. Retrieved 16 October 2019.
"NOR Flash Memory Finds Growth Opportunities in Tablets and E-Book Readers". IHS Technology (Press release). IHS Markit. 9 June 2011. Archived from the original on 16 October 2019. Retrieved 16 October 2019.
"Samsung to unveil new mass-storage memory cards". The Korea Times. 29 August 2012. Archived from the original on 2 November 2023. Retrieved 16 October 2019.
"Winbond Top Serial Flash Memory Supplier Worldwide, Ships 1.7 Billion Units in 2012, Ramps 58nm Production" (Press release). San Jose, Calif. & Taichung, Taiwan: Winbond. 10 April 2013. Archived from the original on 2 November 2023. Retrieved 16 October 2019 – via Business Wire.
Shilov, Anton (1 October 2015). "Samsung: NAND flash industry will triple output to 253EB by 2020". KitGuru. Archived from the original on 7 November 2023. Retrieved 16 October 2019.
"Flash memory prices rebound as makers introduce larger-capacity chips". Nikkei Asian Review. Nikkei, Inc. 21 July 2016. Archived from the original on 2 November 2023. Retrieved 16 October 2019.
Tidwell, William (30 August 2016). "Data 9, Storage 1 - NAND Production Falls Behind in the Age of Hyperscale". Seeking Alpha. Micron. Archived from the original on 18 April 2023. Retrieved 17 October 2019.
Reinsel, David; Gantz, John; Rydning, John (November 2018). "IDC White Paper: The Digitization of the World" (PDF). Seagate Technology. International Data Corporation. p. 14. US44413318. Archived (PDF) from the original on 28 November 2023. Retrieved 17 October 2019.
Mellor, Chris (28 February 2018). "Who was the storage dollar daddy in 2017? S. S. D". The Register. Archived from the original on 10 November 2023. Retrieved 17 October 2019.
"Combined SSD, HDD Storage Shipped Jumps 21% to 912 Exabytes in 2018" (Press release). Cupertino, Calif.: TRENDFOCUS. 7 March 2019. Archived from the original on 2 November 2023. Retrieved 17 October 2019 – via Business Wire.
Yiu, Joseph (February 2015). Design of SoC for High Reliability Systems with Embedded Processors (PDF). Embedded World 2015. ARM. Archived (PDF) from the original on 4 December 2023. Retrieved 23 October 2019.
Smith, Ryan (8 October 2019). "Arm TechCon 2019 Keynote Live Blog (Starts at 10am PT/17:00 UTC)". AnandTech. Archived from the original on 21 November 2023. Retrieved 15 October 2019.
"2011 Annual Report". Cypress Semiconductor. 2012. Archived from the original on 16 October 2019. Retrieved 16 October 2019.
"Technology Roadmap for NAND Flash Memory". techinsights. April 2013. Archived from the original on 9 January 2015. Retrieved 9 January 2015.
"Technology Roadmap for NAND Flash Memory". techinsights. April 2014. Archived from the original on 9 January 2015. Retrieved 9 January 2015.
"NAND Flash Memory Roadmap" (PDF). TechInsights. June 2016. Archived from the original (PDF) on 25 June 2018. Retrieved 25 June 2018.
Parrish, Kevin (11 April 2013). "Samsung Mass Producing 128Gb 3-bit MLC NAND Flash". Tom's Hardware. Archived from the original on 21 June 2019. Retrieved 21 June 2019.
Shimpi, Anand Lal (2 December 2010). "Micron's ClearNAND: 25nm + ECC, Combats Increasing Error Rates". AnandTech. Archived from the original on 3 December 2010. Retrieved 2 December 2010.
"A chronological list of Intel products. The products are sorted by date" (PDF). Intel museum. Intel. July 2005. Archived from the original (PDF) on 9 August 2007. Retrieved 31 July 2007.
"DD28F032SA Datasheet" (PDF). Intel. Archived (PDF) from the original on 4 December 2023. Retrieved 27 June 2019.
"Japanese Company Profiles" (PDF). Integrated Circuit Engineering Corporation. 1996. Archived from the original (PDF) on 19 April 2023. Retrieved 27 June 2019 – via Smithsonian Institution.
"Toshiba to Introduce Flash Memory Cards" (Press release). Tokyo: Toshiba. 2 March 1995. PR0201. Archived from the original on 6 November 2023. Retrieved 20 June 2019.
"Worldwide IC Manufacturers" (PDF). Integrated Circuit Engineering Corporation. 1997. Archived from the original (PDF) on 14 August 2023. Retrieved 10 July 2019 – via Smithsonian Institution.
"Toshiba and SanDisk introduce a one gigabit NAND flash memory chip, doubling capacity of future flash products" (Press release). Las Vegas, Nv. and Tokyo, Japan: Toshiba. 12 November 2001. pr1202. Archived from the original on 19 April 2023. Retrieved 20 June 2019.
"History: Continuing the legacy 2000-2009". Samsung Semiconductor. Samsung. Archived from the original on 1 December 2023. Retrieved 25 June 2019.
"Toshiba announces 1 gigabyte CompactFlash™ card" (Press release). Toshiba. 9 September 2002. Archived from the original on 11 March 2006. Retrieved 11 March 2006.
"History: 2010s". SK Hynix. Archived from the original on 17 May 2021. Retrieved 8 July 2019.
"e.MMC 4.41 Specification compatibility Rev 1.1" (PDF). Samsung Electronics. December 2011. Archived (PDF) from the original on 4 December 2023. Retrieved 15 July 2019.
"Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory" (Press release). Toshiba. 28 June 2017. Archived from the original on 2 November 2023. Retrieved 20 June 2019 – via TechPowerUp.
Shilov, Anton (6 August 2018). "Samsung Starts Mass Production of QLC V-NAND-Based SSDs". AnandTech. Archived from the original on 2 November 2023. Retrieved 23 June 2019.
Dent, Steve (20 July 2018). "Toshiba's flash chips could boost SSD capacity by 500 percent". Engadget. Archived from the original on 6 November 2023. Retrieved 23 June 2019.
McGrath, Dylan (20 February 2019). "Toshiba Claims Highest-Capacity NAND". EE Times. San Francisco. Archived from the original on 23 April 2023. Retrieved 23 June 2019.
Shilov, Anton (26 June 2019). "SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed". AnandTech. Archived from the original on 22 June 2023. Retrieved 8 July 2019.
Mu-Hyun, Cho. "Samsung produces 1TB eUFS memory for smartphones". ZDNet. Archived from the original on 2 November 2023.
"Samsung Breaks Terabyte Threshold for Smartphone Storage with Industry's First 1TB Embedded Universal Flash Storage" (Press release). Samsung. 30 January 2019. Archived from the original on 30 November 2023. Retrieved 13 July 2019.
"UFS 4.0 Infographic" (PDF). Micron. 2023. Archived (PDF) from the original on 29 October 2023.

worldcat.org (Global: 5^th place; English: 5^th place)

search.worldcat.org

Kim, Chulbum; Cho, Ji-Ho; Jeong, Woopyo; Park, Il-han; Park, Hyun-Wook; Kim, Doo-Hyun; Kang, Daewoon; Lee, Sunghoon; Lee, Ji-Sang; Kim, Wontae; Park, Jiyoon; Ahn, Yang-lo; Lee, Jiyoung; Lee, Jong-Hoon; Kim, Seungbum; Yoon, Hyun-Jun; Yu, Jaedoeg; Choi, Nayoung; Kwon, Yelim; Kim, Nahyun; Jang, Hwajun; Park, Jonghoon; Song, Seunghwan; Park, Yongha; Bang, Jinbae; Hong, Sangki; Jeong, Byunghoon; Kim, Hyun-Jin; Lee, Chunan; et al. (2017). 11.4 a 512Gb 3b/Cell 64-stacked WL 3D V-NAND flash memory. International Solid-State Circuits Conference. San Francisco: IEEE. pp. 202–203. doi:10.1109/ISSCC.2017.7870331. ISBN 978-1-5090-3758-2. ISSN 2376-8606. S2CID 206998691.
James, Dick (May 2014). 3D ICs in the real world. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). Saratoga Springs, NY. pp. 113–119. doi:10.1109/ASMC.2014.6846988. ISBN 978-1-4799-3944-2. ISSN 2376-6697. S2CID 42565898.
Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen (25 September 2014). "Overview of emerging nonvolatile memory technologies". Nanoscale Research Letters. 9 (1): 526. Bibcode:2014NRL.....9..526M. doi:10.1186/1556-276x-9-526. ISSN 1556-276X. PMC 4182445. PMID 25278820. 526.
Kodama, N.; Oyama, K.; Shirai, H.; Saitoh, K.; Okazawa, T.; Hokari, Y. (December 1991). A symmetrical side wall (SSW)-DSA cell for a 64 Mbit flash memory. International Electron Devices Meeting. Washington, DC: IEEE. pp. 303–306. doi:10.1109/IEDM.1991.235443. ISBN 0-7803-0243-5. ISSN 0163-1918. S2CID 111203629.
Fastow, Richard M.; Ahmed, Khaled Z.; Haddad, Sameer; Randolph, Mark; Huster, C.; Hom, P. (April 2000). "Bake induced charge gain in NOR flash cells". IEEE Electron Device Letters. 21 (4): 184–186. Bibcode:2000IEDL...21..184F. doi:10.1109/55.830976. ISSN 1558-0563. S2CID 24724751.
Takeuchi, Ken (May 2010). Low power 3D-integrated Solid-State Drive (SSD) with adaptive voltage generator. IEEE International Memory Workshop (IMW). Seoul, Korea. doi:10.1109/IMW.2010.5488397. ISBN 978-1-4244-6721-1. ISSN 2159-4864.
Ishida, Koichi; Yasufuku, Tadashi; Miyamoto, Shinji; Nakai, Hiroto; Takamiya, Makoto; Sakurai, Takayasu; Takeuchi, Ken (May 2011). "1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD". IEEE Journal of Solid-State Circuits. 46 (6). Institute of Electrical and Electronics Engineers: 1478–1487. Bibcode:2011IJSSC..46.1478I. doi:10.1109/JSSC.2011.2131810. ISSN 1558-173X. S2CID 13701601.

xbitlabs.com (Global: low place; English: low place)

Shilov, Anton (12 September 2005). "Samsung Unveils 2GB Flash Memory Chip". X-bit labs. Archived from the original on 24 December 2008. Retrieved 30 November 2008.

yahoo.com (Global: 38^th place; English: 40^th place)

news.yahoo.com

Wong, Raymond (4 December 2012). "Flash memory breakthrough could lead to even more reliable data storage". Yahoo! News. Archived from the original on 2 November 2023.

youtube.com (Global: 9^th place; English: 13^th place)

Linus Sebastian from Techquickie (9 September 2020). Is cooling your SSD a mistake?. Retrieved 9 July 2025. (all-uppercase words in title changed to lowercase)

zdnet.com (Global: 786^th place; English: 558^th place)

Kwan, Campbell. "Former Toshiba memory business to rebrand as Kioxia". ZDNet. Archived from the original on 4 October 2023. Retrieved 12 July 2023.
Mu-Hyun, Cho. "Samsung produces 1TB eUFS memory for smartphones". ZDNet. Archived from the original on 2 November 2023.

Flash memory (English Wikipedia)

anandtech.com (Global: 1,383rd place; English: 878th place)

appleinsider.com (Global: 3,390th place; English: 2,174th place)

architecting.it (Global: low place; English: low place)

archive.today (Global: 14th place; English: 14th place)

arm.com (Global: 4,773rd place; English: 3,130th place)

community.arm.com

arstechnica.com (Global: 388th place; English: 265th place)

atmel.com (Global: low place; English: low place)

backblaze.com (Global: low place; English: low place)

blocksandfiles.com (Global: low place; English: low place)

books.google.com (Global: 3rd place; English: 3rd place)

bunniestudios.com (Global: low place; English: low place)

businessquant.com (Global: low place; English: low place)

businesswire.com (Global: 615th place; English: 407th place)

cern.ch (Global: 1,959th place; English: 1,611th place)

indico.cern.ch

cmu.edu (Global: 1,564th place; English: 1,028th place)

users.ece.cmu.edu

cnet.com (Global: 272nd place; English: 225th place)

computer.org (Global: 5,196th place; English: 3,635th place)

computerhistory.org (Global: 2,213th place; English: 1,495th place)

convertunits.com (Global: low place; English: low place)

custompcreview.com (Global: low place; English: low place)

cypress.com (Global: low place; English: low place)

investors.cypress.com

dailytech.com (Global: low place; English: 8,724th place)

datasheetcatalog.com (Global: low place; English: low place)

pdf.datasheetcatalog.com

doi.org (Global: 2nd place; English: 2nd place)

dramexchange.com (Global: low place; English: low place)

dslreports.com (Global: low place; English: low place)

economist.com (Global: 254th place; English: 236th place)

eetimes.com (Global: 3,722nd place; English: 2,509th place)

electronicdesign.com (Global: low place; English: 7,853rd place)

electronicproducts.com (Global: low place; English: low place)

www2.electronicproducts.com

electronics-notes.com (Global: low place; English: low place)

electronicsweekly.com (Global: low place; English: low place)

elitepcbuilding.com (Global: low place; English: low place)

elnec.com (Global: low place; English: low place)

embedded.com (Global: low place; English: low place)

engadget.com (Global: 466th place; English: 349th place)

espacenet.com (Global: 800th place; English: 676th place)

worldwide.espacenet.com

eweek.com (Global: 5,390th place; English: 3,454th place)

extremetech.com (Global: 4,667th place; English: 3,322nd place)

flashstorage.com (Global: low place; English: low place)

forbes.com (Global: 54th place; English: 48th place)

futurememorystorage.com (Global: low place; English: low place)

files.futurememorystorage.com

gizmag.com (Global: 7,208th place; English: 4,661st place)

global.toshiba (Global: low place; English: low place)

harvard.edu (Global: 18th place; English: 17th place)

ui.adsabs.harvard.edu

hexus.net (Global: low place; English: low place)

howstuffworks.com (Global: 840th place; English: 635th place)

computer.howstuffworks.com

hyperstone.com (Global: low place; English: low place)

ieee.org (Global: 652nd place; English: 515th place)

ieeexplore.ieee.org

ihs.com (Global: 5,391st place; English: 3,206th place)

technology.ihs.com

intel.com (Global: 1,118th place; English: 825th place)

download.intel.com

interestingengineering.com (Global: 8,846th place; English: 5,943rd place)

jedec.org (Global: low place; English: 7,755th place)

kingston.com (Global: low place; English: low place)

media.kingston.com

kingston.com

kitguru.net (Global: low place; English: low place)

koreatimes.co.kr (Global: 536th place; English: 386th place)

linkedin.com (Global: 895th place; English: 692nd place)

maltiel-consulting.com (Global: low place; English: low place)

media-micron.com (Global: low place; English: low place)

memblaze.com (Global: low place; English: low place)

microchip.com (Global: low place; English: 8,026th place)

ww1.microchip.com

micron.com (Global: low place; English: low place)

micron.com

anandtech.com (Global: 1,383^rd place; English: 878^th place)

appleinsider.com (Global: 3,390^th place; English: 2,174^th place)

archive.today (Global: 14^th place; English: 14^th place)

arm.com (Global: 4,773^rd place; English: 3,130^th place)

arstechnica.com (Global: 388^th place; English: 265^th place)

books.google.com (Global: 3^rd place; English: 3^rd place)

businesswire.com (Global: 615^th place; English: 407^th place)

cern.ch (Global: 1,959^th place; English: 1,611^th place)

cmu.edu (Global: 1,564^th place; English: 1,028^th place)

cnet.com (Global: 272^nd place; English: 225^th place)

computer.org (Global: 5,196^th place; English: 3,635^th place)

computerhistory.org (Global: 2,213^th place; English: 1,495^th place)

dailytech.com (Global: low place; English: 8,724^th place)

doi.org (Global: 2^nd place; English: 2^nd place)

economist.com (Global: 254^th place; English: 236^th place)

eetimes.com (Global: 3,722^nd place; English: 2,509^th place)

electronicdesign.com (Global: low place; English: 7,853^rd place)

engadget.com (Global: 466^th place; English: 349^th place)

espacenet.com (Global: 800^th place; English: 676^th place)

eweek.com (Global: 5,390^th place; English: 3,454^th place)

extremetech.com (Global: 4,667^th place; English: 3,322^nd place)

forbes.com (Global: 54^th place; English: 48^th place)

gizmag.com (Global: 7,208^th place; English: 4,661^st place)

harvard.edu (Global: 18^th place; English: 17^th place)

howstuffworks.com (Global: 840^th place; English: 635^th place)

ieee.org (Global: 652^nd place; English: 515^th place)

ihs.com (Global: 5,391^st place; English: 3,206^th place)

intel.com (Global: 1,118^th place; English: 825^th place)

interestingengineering.com (Global: 8,846^th place; English: 5,943^rd place)

jedec.org (Global: low place; English: 7,755^th place)

koreatimes.co.kr (Global: 536^th place; English: 386^th place)

linkedin.com (Global: 895^th place; English: 692^nd place)

microchip.com (Global: low place; English: 8,026^th place)

microsoft.com (Global: 153^rd place; English: 151^st place)

nasa.gov (Global: 75^th place; English: 83^rd place)

nih.gov (Global: 4^th place; English: 4^th place)

nikkei.com (Global: 211^th place; English: 915^th place)

nxp.com (Global: low place; English: 8,784^th place)

patents.google.com (Global: 1,182^nd place; English: 725^th place)

pcgamesn.com (Global: 1,748^th place; English: 1,058^th place)

pcworld.com (Global: 1,317^th place; English: 873^rd place)

phys.org (Global: 1,283^rd place; English: 1,130^th place)

princeton.edu (Global: 741^st place; English: 577^th place)

researchgate.net (Global: 120^th place; English: 125^th place)

reuters.com (Global: 49^th place; English: 47^th place)

samsung.com (Global: 2,554^th place; English: 2,045^th place)

seekingalpha.com (Global: 5,344^th place; English: 3,420^th place)

semanticscholar.org (Global: 11^th place; English: 8^th place)

si.edu (Global: 340^th place; English: 295^th place)

slashgear.com (Global: 7,835^th place; English: 5,254^th place)

slideshare.net (Global: 2,161^st place; English: 2,535^th place)

softpedia.com (Global: 3,250^th place; English: 2,302^nd place)

sonoma.edu (Global: low place; English: 7,858^th place)

statista.com (Global: 776^th place; English: 844^th place)

techcrunch.com (Global: 187^th place; English: 146^th place)

techpowerup.com (Global: 4,960^th place; English: 3,052^nd place)

techspot.com (Global: 7,139^th place; English: 4,608^th place)

techtarget.com (Global: 2,435^th place; English: 1,699^th place)

theregister.co.uk (Global: 1,216^th place; English: 797^th place)

theregister.com (Global: 3,700^th place; English: 2,360^th place)

ti.com (Global: 4,228^th place; English: 2,818^th place)

tomshardware.com (Global: 2,976^th place; English: 1,939^th place)

toshiba.co.jp (Global: 9,918^th place; English: low place)