Analysis of information sources in references of the Wikipedia article "Flash memory" in English language version.
Reliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85 °C or 100 years at 25 °C
Unit shipments increased 64% in 1999 from the prior year, and are forecast to increase 44% to 1.8 billion units in 2000.
The PSoC ... utilizes a unique Flash process: SONOS
The flash memory can be reprogrammed up to 100 times.
The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee.
The flash memory can be reprogrammed up to 100 times.
The devices offer single-power-supply operation (2.7 V to 3.6 V), sector architecture, Embedded Algorithms, high performance, and a 1,000,000 program/erase cycle endurance guarantee.
The PSoC ... utilizes a unique Flash process: SONOS
Reliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85 °C or 100 years at 25 °C