Gallium(II) selenide (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Gallium(II) selenide" in English language version.

refsWebsite

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11doi.org

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6harvard.edu

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2nih.gov

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2semanticscholar.org

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2worldcat.org

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1cern.ch

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1arxiv.org

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1handle.net

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1himani-arora-ha.github.io

low place

arxiv.org

V. Zolyomi; N. D. Drummond; V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87 (19): 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403. S2CID 59569448.

cern.ch

cds.cern.ch

Kübler, C.; et al. (2005). Kobayashi, Takayoshi; Okada, Tadashi; Kobayashi, Tetsuro; et al. (eds.). Ultrabroadband detection of multi-THz field transients with GaSe electro-optic sensors (PDF). Springer Series in Chemical Physics. Vol. 79. doi:10.1007/b138761. ISBN 3-540-24110-8.

doi.org

Richard H. Bube; Edward L. Lind (1959). "Photoconductivity of Gallium Selenide Crystals". Phys. Rev. 115 (5): 1159–1164. Bibcode:1959PhRv..115.1159B. doi:10.1103/PhysRev.115.1159.
J. M. Auerhammer; E. R. Eliel (1996). "Frequency doubling of mid-infrared radiation in gallium selenide". Opt. Lett. 21 (11): 773–775. Bibcode:1996OptL...21..773A. doi:10.1364/OL.21.000773. PMID 19876154.
N.B. Singh; D.R. Suhre; V. Balakrishna; M. Marable*; R. Meyer*; N. Fernelius; F.K. Hopkins; D. Zelmon (1998). "Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications". Progress in Crystal Growth and Characterization of Materials. 37 (1): 47–102. doi:10.1016/S0960-8974(98)00013-8.
Kübler, C.; et al. (2005). Kobayashi, Takayoshi; Okada, Tadashi; Kobayashi, Tetsuro; et al. (eds.). Ultrabroadband detection of multi-THz field transients with GaSe electro-optic sensors (PDF). Springer Series in Chemical Physics. Vol. 79. doi:10.1007/b138761. ISBN 3-540-24110-8.
Liska, P.; Thampi, K.; Gratzel, M.; Bremaud, D.; Rudmann, D.; Upadhyaya, H. (2006). "Nanocrystalline dye-sensitized solar cell/copper indium gallium selenide thin-film tandem showing greater than 15% conversion efficiency". Applied Physics Letters. 88 (20): 203103. Bibcode:2006ApPhL..88t3103L. doi:10.1063/1.2203965.
V. G. Voevodin; et al. (2004). "Large single crystals of gallium selenide: growing, doping by In and characterization". Optical Materials. 26 (4): 495–499. Bibcode:2004OptMa..26..495V. doi:10.1016/j.optmat.2003.09.014.
B. Singh; et al. (1998). "Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications". Progress in Crystal Growth and Characterization of Materials. 37: 47. doi:10.1016/S0960-8974(98)00013-8.
V. Zolyomi; N. D. Drummond; V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87 (19): 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403. S2CID 59569448.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.
Arora, Himani; Erbe, Artur (2021). "Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe". InfoMat. 3 (6): 662–693. doi:10.1002/inf2.12160. ISSN 2567-3165.
Chikan, V.; Kelley, D. (2002). "Synthesis of Highly Luminescent Nanoparticles". Nano Letters. 2 (2): 141. Bibcode:2002NanoL...2..141C. doi:10.1021/nl015641m.

handle.net

hdl.handle.net

Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.

harvard.edu

ui.adsabs.harvard.edu

Richard H. Bube; Edward L. Lind (1959). "Photoconductivity of Gallium Selenide Crystals". Phys. Rev. 115 (5): 1159–1164. Bibcode:1959PhRv..115.1159B. doi:10.1103/PhysRev.115.1159.
J. M. Auerhammer; E. R. Eliel (1996). "Frequency doubling of mid-infrared radiation in gallium selenide". Opt. Lett. 21 (11): 773–775. Bibcode:1996OptL...21..773A. doi:10.1364/OL.21.000773. PMID 19876154.
Liska, P.; Thampi, K.; Gratzel, M.; Bremaud, D.; Rudmann, D.; Upadhyaya, H. (2006). "Nanocrystalline dye-sensitized solar cell/copper indium gallium selenide thin-film tandem showing greater than 15% conversion efficiency". Applied Physics Letters. 88 (20): 203103. Bibcode:2006ApPhL..88t3103L. doi:10.1063/1.2203965.
V. G. Voevodin; et al. (2004). "Large single crystals of gallium selenide: growing, doping by In and characterization". Optical Materials. 26 (4): 495–499. Bibcode:2004OptMa..26..495V. doi:10.1016/j.optmat.2003.09.014.
V. Zolyomi; N. D. Drummond; V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87 (19): 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403. S2CID 59569448.
Chikan, V.; Kelley, D. (2002). "Synthesis of Highly Luminescent Nanoparticles". Nano Letters. 2 (2): 141. Bibcode:2002NanoL...2..141C. doi:10.1021/nl015641m.

himani-arora-ha.github.io

Arora, Himani (2020). "Charge transport in two-dimensional materials and their electronic applications" (PDF). Doctoral Dissertation. Retrieved July 1, 2021.

nih.gov

pubmed.ncbi.nlm.nih.gov

J. M. Auerhammer; E. R. Eliel (1996). "Frequency doubling of mid-infrared radiation in gallium selenide". Opt. Lett. 21 (11): 773–775. Bibcode:1996OptL...21..773A. doi:10.1364/OL.21.000773. PMID 19876154.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.

semanticscholar.org

api.semanticscholar.org

V. Zolyomi; N. D. Drummond; V. I. Fal'ko (2013). "Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides". Phys. Rev. B. 87 (19): 195403. arXiv:1302.6067. Bibcode:2013PhRvB..87s5403Z. doi:10.1103/PhysRevB.87.195403. S2CID 59569448.
Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.

worldcat.org

Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. hdl:11573/1555190. ISSN 1944-8244. PMID 31651146. S2CID 204884014.
Arora, Himani; Erbe, Artur (2021). "Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe". InfoMat. 3 (6): 662–693. doi:10.1002/inf2.12160. ISSN 2567-3165.