References analysis of the Wikipedia article "Gallium(III) oxide" in the English version

doi.org

Dohy, D.; Gavarri, J. R. (1983). "Oxyde β-Ga₂O₃: Champ de force, dilatation thermique, et rigidité anisotropes". Journal of Solid State Chemistry (in French). 49 (1): 107–117. Bibcode:1983JSSCh..49..107D. doi:10.1016/0022-4596(83)90222-0.

Geller, S. (1 September 1960). "Crystal Structure of β-Ga₂O₃". The Journal of Chemical Physics. 33 (3): 676–684. Bibcode:1960JChPh..33..676G. doi:10.1063/1.1731237.

Lin, Jianhua; Zhou, Liuyan; Shen, Yuyu; Fu, Jie; Chen, Yanling; Lei, Lei; Ye, Renguang; Shen, Yang; Deng, Degang; Xu, Shiqing (10 December 2022). "[Zn²⁺-Ge⁴⁺] co-substitutes [Ga³⁺-Ga³⁺] to coordinately broaden the near-infrared emission of Cr³⁺ in Ga₂O₃ phosphors". Physical Chemistry Chemical Physics. 25 (3): 2090–2097. doi:10.1039/D2CP04737C. PMID 36562283. S2CID 254561209.

Liu, Zhifu; Yamazaki, Toshinari; Shen, Yanbai; Kikuta, Toshio; Nakatani, Noriyuki; Li, Yongxiang (22 February 2008). "O₂ and CO sensing of Ga₂O₃ multiple nanowire gas sensors". Sensors and Actuators B: Chemical. 129 (2): 666–670. doi:10.1016/j.snb.2007.09.055.

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver (1 February 2022). "β-Gallium oxide power electronics". APL Materials. 10 (2): 029201. Bibcode:2022APLM...10b9201G. doi:10.1063/5.0060327. S2CID 246660179.

Pavesi, M. (2018). "ε-Ga₂O₃ epilayers as a material for solar-blind UV photodetectors". Materials Chemistry and Physics. 205: 502–507. doi:10.1016/j.matchemphys.2017.11.023.

Rajabi Kalvani, Payam; Parisini, Antonella; Sozzi, Giovanna; Borelli, Carmine; Mazzolini, Piero; Bierwagen, Oliver; Vantaggio, Salvatore; Egbo, Kingsley; Bosi, Matteo; Seravalli, Luca; Fornari, Roberto (4 October 2023). "Interfacial Properties of the SnO/κ-Ga 2 O 3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga 2 O 3". ACS Applied Materials & Interfaces. 15 (39): 45997–46009. doi:10.1021/acsami.3c08841. ISSN 1944-8244. PMC 10561148. PMID 37733937.

Reese, Samantha B.; Remo, Timothy; Green, Johney; Zakutayev, Andriy (17 April 2019). "How Much Will Gallium Oxide Power Electronics Cost?". Joule. 3 (4): 903–907. doi:10.1016/j.joule.2019.01.011. S2CID 127789383.

Heinselman, Karen N.; Haven, Drew; Zakutayev, Andriy; Reese, Samantha B. (3 August 2022). "Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth". Crystal Growth & Design. 22 (8): 4854–4863. doi:10.1021/acs.cgd.2c00340.

Bauman, D. A.; Borodkin, A. I.; Petrenko, A. A.; Panov, D. I.; Kremleva, A. V.; Spiridonov, V. A.; Zakgeim, D. A.; Silnikov, M. V.; Odnoblyudov, M. A.; Romanov, A. E.; Bougrov, V. E. (1 March 2021). "On improving the radiation resistance of gallium oxide for space applications". Acta Astronautica. 180: 125–129. Bibcode:2021AcAau.180..125B. doi:10.1016/j.actaastro.2020.12.010. S2CID 230578016.

Yan-Mei et alChinese Phys. Lett. 25 1603, Ma (2008). "High-Pressure and High-Temperature Behaviour of Gallium Oxide". Chinese Physics Letters. 25 (5): 1603–1605. doi:10.1088/0256-307X/25/5/022. S2CID 250882992.{{cite journal}}: CS1 maint: numeric names: authors list (link)

Rafie Borujeny, E.; Sendetskyi, O.; Fleischauer, M. D.; Cadien, K. C. (2020). "Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition". ACS Applied Materials & Interfaces. 12 (39): 44225–44237. doi:10.1021/acsami.0c08477. PMID 32865966. S2CID 221403770.

Yang, Duyoung; Kim, Byungsoo; Eom, Tae Hoon; Park, Yongjo; Jang, Ho Won (1 March 2022). "Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective". Electronic Materials Letters. 18 (2): 113–128. Bibcode:2022EML....18..113Y. doi:10.1007/s13391-021-00333-5. S2CID 245773856.

Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van de Walle, C. G.; Bellotti, E.; Chua, C. L.; Collazo, R.; Coltrin, M. E.; Cooper, J. A.; Evans, K. R. (2018). "Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges". Advanced Electronic Materials. 4 (1): 1600501. doi:10.1002/aelm.201600501. S2CID 38628999.

Zhang, Yuewei; Alema, Fikadu; Mauze, Akhil; Koksaldi, Onur S.; Miller, Ross; Osinsky, Andrei; Speck, James S. (1 February 2019). "MOCVD grown epitaxial β-Ga₂O₃ thin film with an electron mobility of 176 cm²/V s at room temperature". APL Materials. 7 (2): 022506. Bibcode:2019APLM....7b2506Z. doi:10.1063/1.5058059. S2CID 104453229.

Galazka, Zbigniew (21 January 2022). "Growth of bulk β-Ga₂O₃ single crystals by the Czochralski method". Journal of Applied Physics. 131 (3): 031103. Bibcode:2022JAP...131c1103G. doi:10.1063/5.0076962. S2CID 246074647.

Playford, Helen Y.; Hannon, Alex C.; Barney, Emma R.; Walton, Richard I. (2013). "Structures of Uncharacterised Polymorphs of Gallium Trioxide from Total Neutron Diffraction". Chemistry: A European Journal. 19 (8): 2803–13. doi:10.1002/chem.201203359. PMID 23307528.

Li, Liandi; Wei, Wei; Behrens, Malte (July 2012). "Synthesis and characterization of α-, β-, and γ-Ga₂O₃ prepared from aqueous solutions by controlled precipitation". Solid State Sciences. 14 (7): 971–981. Bibcode:2012SSSci..14..971L. doi:10.1016/j.solidstatesciences.2012.04.037.

Boschi, F.; Bosi, M.; Berzina, T.; Buffagni, E.; Ferrari, C.; Fornari, R. (2015). "Hetero-epitaxy of ε-Ga₂O₃ layers by MOCVD and ALD". Journal of Crystal Growth. 44: 25–30. doi:10.1016/j.jcrysgro.2016.03.013.

Eckert, L. J.; Bradt, R. C. (1973). "Thermal Expansion of Alpha Ga₂O₃". Journal of the American Ceramic Society. 56 (4): 229. doi:10.1111/j.1151-2916.1973.tb12471.x.

Marezio, M.; Remeika, J. P. (1 March 1967). "Bond Lengths in the α-Ga₂O₃ Structure and the High-Pressure Phase of Ga_2−xFe_xO₃". The Journal of Chemical Physics. 46 (5): 1862–1865. doi:10.1063/1.1840945.

Cora, I (2017). "The real structure of ε-Ga₂O₃ and its relation to κ-phase". CrystEngComm. 19 (11): 1509–1516. doi:10.1039/C7CE00123A. hdl:10831/67366.

Fornari, R.; Pavesi, M.; Montedoro, V.; Klimm, D.; Mezzadri, F.; Cora, I.; Pécz, B.; Boschi, F.; Parisini, A.; Baraldi, A.; Ferrari, C.; Gombia, E.; Bosi, M. (1 November 2017). "Thermal stability of ε-Ga₂O₃ polymorph". Acta Materialia. 140: 411–416. Bibcode:2017AcMat.140..411F. doi:10.1016/j.actamat.2017.08.062.

Playford, Helen. Y.; Hannon, Alex C.; Tucker, Matthew G.; Dawson, Daniel M.; Ashbrook, Sharon E.; Kastiban, Reza J.; Sloan, Jeremy; Walton, Richard I. (24 July 2014). "Characterization of Structural Disorder in γ-Ga₂O₃". The Journal of Physical Chemistry C. 118 (29): 16188–16198. doi:10.1021/jp5033806. hdl:10023/6874.

Roy, Rustum; Hill, V. G.; Osborn, E. F. (1952). "Polymorphism of Ga₂O₃ and the System Ga₂O₃—H₂O". Journal of the American Chemical Society. 74 (3): 719–722. doi:10.1021/ja01123a039.

Prewitt, Charles T.; Shannon, Robert D.; Rogers, Donald Burl; Sleight, Arthur W. (1969). "C rare earth oxide-corundum transition and crystal chemistry of oxides having the corundum structure". Inorganic Chemistry. 8 (9): 1985–1993. doi:10.1021/ic50079a033.

Playford, Helen Y.; Hannon, Alex C.; Barney, Emma R.; Walton, Richard I. (18 February 2013). "Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction". Chemistry: A European Journal. 19 (8): 2803–2813. doi:10.1002/chem.201203359. PMID 23307528.

Spencer, Joseph A.; Mock, Alyssa L.; Jacobs, Alan G.; Schubert, Mathias; Zhang, Yuhao; Tadjer, Marko J. (1 March 2022). "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃". Applied Physics Reviews. 9 (1): 011315. Bibcode:2022ApPRv...9a1315S. doi:10.1063/5.0078037. S2CID 247259950.

Cora, Ildikó; Mezzadri, Francesco; Boschi, Francesco; Bosi, Matteo; Čaplovičová, Maria; Calestani, Gianluca; Dódony, István; Pécz, Béla; Fornari, Roberto (13 March 2017). "The real structure of ε-Ga₂O₃ and its relation to κ-phase". CrystEngComm. 19 (11): 1509–1516. doi:10.1039/C7CE00123A. hdl:10831/67366. S2CID 102474875.

Deng, Huiyang; Leedle, Kenneth J.; Miao, Yu; Black, Dylan S.; Urbanek, Karel E.; McNeur, Joshua; Kozák, Martin; Ceballos, Andrew; Hommelhoff, Peter; Solgaard, Olav; Byer, Robert L.; Harris, James S. (April 2020). "Ga₂O₃-Based Optical Applications: Gallium Oxide for High-Power Optical Applications (Advanced Optical Materials 7/2020)". Advanced Optical Materials. 8 (7): 2070026. doi:10.1002/adom.202070026. S2CID 216243413.

Nogales, E; Méndez, B; Piqueras, J; García, J A (18 March 2009). "Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices" (PDF). Nanotechnology. 20 (11): 115201. Bibcode:2009Nanot..20k5201N. doi:10.1088/0957-4484/20/11/115201. PMID 19420434. S2CID 23058882.

Li, Wenshen; Nomoto, Kazuki; Hu, Zongyang; Jena, Debdeep; Xing, Huili Grace (January 2020). "Field-Plated Ga₂O₃ Trench Schottky Barrier Diodes With a BV²/R_on,sp of up to 0.95 GW/cm²". IEEE Electron Device Letters. 41 (1): 107–110. doi:10.1109/LED.2019.2953559. S2CID 209696027.

Xia, Zhanbo; Xue, Hao; Joishi, Chandan; Mcglone, Joe; Kalarickal, Nidhin Kurian; Sohel, Shahadat H.; Brenner, Mark; Arehart, Aaron; Ringel, Steven; Lodha, Saurabh; Lu, Wu; Rajan, Siddharth (July 2019). "β-Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz". IEEE Electron Device Letters. 40 (7): 1052–1055. Bibcode:2019IEDL...40.1052X. doi:10.1109/LED.2019.2920366. S2CID 195439906.

Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu (2 January 2012). "Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates". Applied Physics Letters. 100 (1): 013504. Bibcode:2012ApPhL.100a3504H. doi:10.1063/1.3674287.

Wang, Chenlu; Gong, Hehe; Lei, Weina; Cai, Yuncong; Hu, Zhuangzhuang; Xu, Shengrui; Liu, Zhihong; Feng, Qian; Zhou, Hong; Ye, Jiandong; Zhang, Jincheng; Zhang, Rong; Hao, Yue (April 2021). "Demonstration of the p-NiOx/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm²". IEEE Electron Device Letters. 42 (4): 485–488. Bibcode:2021IEDL...42..485W. doi:10.1109/LED.2021.3062851. S2CID 232372680.

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Cora, I (2017). "The real structure of ε-Ga₂O₃ and its relation to κ-phase". CrystEngComm. 19 (11): 1509–1516. doi:10.1039/C7CE00123A. hdl:10831/67366.

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Geller, S. (1 September 1960). "Crystal Structure of β-Ga₂O₃". The Journal of Chemical Physics. 33 (3): 676–684. Bibcode:1960JChPh..33..676G. doi:10.1063/1.1731237.

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Gallium(III) oxide (English Wikipedia)

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