Gallium arsenide (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Gallium arsenide" in English language version.

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33doi.org

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anandtech.com

Cutress, Dr Ian. "'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5". www.anandtech.com. Retrieved 2020-08-28.

archive.org

Šilc, Von Jurij; Robič, Borut; Ungerer, Theo (1999). Processor architecture: from dataflow to superscalar and beyond. Springer. p. 34. ISBN 978-3-540-64798-0.

arstechnica.com

"A reprieve for Moore's Law: milspec chip writes computing's next chapter". Ars Technica. 2016-06-09. Retrieved 2016-06-14.

arxiv.org

Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989: 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034: 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.

books.google.com

V. M., Goldschmidt (1926). "Geochemische Verteilungsgesetze der Elemente". Skrifter udgivne af Videnskabsselskabet i Christiania. I. Mathematisk-naturvidenskabelig klasse (in German) (8). Oslo: I kommisjon hos Jacob Dybwad: 34, 100.
Schubert, E. Fred (2023-03-11). Light-Emitting Diodes (4th Edition, 2023). E. Fred Schubert. ISBN 978-0-9863826-7-3.
Dennis Fisher; I. J. Bahl (1995). Gallium Arsenide IC Applications Handbook. Vol. 1. Elsevier. p. 61. ISBN 978-0-12-257735-2. 'Clear search' to see pages
Ye, Peide D.; Xuan, Yi; Wu, Yanqing; Xu, Min (2010). "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model". In Oktyabrsky, Serge; Ye, Peide (eds.). Fundamentals of III-V Semiconductor MOSFETs. Springer Science & Business Media. pp. 173–194. doi:10.1007/978-1-4419-1547-4_7. ISBN 978-1-4419-1547-4.
Cabrera, Rowan (2019). Electronic Devices and Circuits. EDTECH. p. 35. ISBN 9781839473838. Retrieved 20 January 2022.

ca.gov

oehha.ca.gov

"Chemicals Listed Effective August 1, 2008 as Known to the State of California to Cause Cancer or Reproductive Toxicity: gallium arsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide". OEHHA. 2008-08-01.

cern.ch

cds.cern.ch

Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.; Hey, G. (2009). "2: From Extraterrestrial to Terrestrial Applications". High-Efficient Low-Cost Photovoltaics: Recent Developments. Springer. doi:10.1007/978-3-540-79359-5. ISBN 978-3-540-79359-5.

degruyter.com

Welker, H. (1952-11-01). "Über neue halbleitende Verbindungen". Zeitschrift für Naturforschung A. 7 (11): 744–749. doi:10.1515/zna-1952-1110. ISSN 1865-7109.

doi.org

Welker, H. (1952-11-01). "Über neue halbleitende Verbindungen". Zeitschrift für Naturforschung A. 7 (11): 744–749. doi:10.1515/zna-1952-1110. ISSN 1865-7109.
Straumanis, M. E.; Kim, C. D. (1965-08-10). "Phase extent of gallium arsenide determined by the lattice constant and density method". Acta Crystallographica. 19 (2): 256–259. doi:10.1107/S0365110X65003183. ISSN 0365-110X.
Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018). "Black GaAs by Metal-Assisted Chemical Etching". ACS Applied Materials & Interfaces. 10 (39): 33434–33440. doi:10.1021/acsami.8b10370. ISSN 1944-8244. PMID 30191706. S2CID 206490133.
Ye, Peide D.; Xuan, Yi; Wu, Yanqing; Xu, Min (2010). "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model". In Oktyabrsky, Serge; Ye, Peide (eds.). Fundamentals of III-V Semiconductor MOSFETs. Springer Science & Business Media. pp. 173–194. doi:10.1007/978-1-4419-1547-4_7. ISBN 978-1-4419-1547-4.
Schlesinger, T.E. (2001). "Gallium Arsenide". Encyclopedia of Materials: Science and Technology. Elsevier. pp. 3431–3435. doi:10.1016/B0-08-043152-6/00612-4. ISBN 9780080431529. Retrieved 27 January 2021.
Ishutkin, S.V.; Kagadey, V.A. (2015). "Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside". Russian Microelectronics. 44: 380–388. doi:10.1134/S1063739715060049.
Manes, G.F. (2005). "Gallium Arsenide Technology and Applications". Encyclopedia of RF and Microwave Engineering. Wiley. doi:10.1002/0471654507.eme143. ISBN 9780471270539.
Yin, Jun; Migas, Dmitri B.; Panahandeh-Fard, Majid; Chen, Shi; Wang, Zilong; Lova, Paola; Soci, Cesare (3 October 2013). "Charge Redistribution at GaAs/P3HT Heterointerfaces with Different Surface Polarity". The Journal of Physical Chemistry Letters. 4 (19): 3303–3309. doi:10.1021/jz401485t.
Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.; Hey, G. (2009). "2: From Extraterrestrial to Terrestrial Applications". High-Efficient Low-Cost Photovoltaics: Recent Developments. Springer. doi:10.1007/978-3-540-79359-5. ISBN 978-3-540-79359-5.
Schnitzer, I.; et al. (1993). "Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures". Applied Physics Letters. 62 (2): 131. Bibcode:1993ApPhL..62..131S. doi:10.1063/1.109348. S2CID 14611939.
Wang, X.; et al. (2013). "Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit". IEEE Journal of Photovoltaics. 3 (2): 737. doi:10.1109/JPHOTOV.2013.2241594. S2CID 36523127.
Yamaguchi, Masafumi (2021-04-14), Muzibur Rahman, Mohammed; Mohammed Asiri, Abdullah; Khan, Anish; Inamuddin (eds.), "High-Efficiency GaAs-Based Solar Cells", Post-Transition Metals, IntechOpen, doi:10.5772/intechopen.94365, ISBN 978-1-83968-260-5, S2CID 228807831, retrieved 2022-10-11
Haegel, Nancy; Kurtz, Sarah (November 2021). "Global Progress Toward Renewable Electricity: Tracking the Role of Solar". IEEE Journal of Photovoltaics. 11 (6) (published 20 September 2021): 1335–1342. doi:10.1109/JPHOTOV.2021.3104149. ISSN 2156-3381. S2CID 239038321.
Papež, Nikola; Gajdoš, Adam; Dallaev, Rashid; Sobola, Dinara; Sedlák, Petr; Motúz, Rastislav; Nebojsa, Alois; Grmela, Lubomír (2020-04-30). "Performance analysis of GaAs based solar cells under gamma irradiation". Applied Surface Science. 510: 145329. Bibcode:2020ApSS..51045329P. doi:10.1016/j.apsusc.2020.145329. ISSN 0169-4332. S2CID 213661192.
Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany; Ptak, Aaron J. (2018-11-27). A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells (Report). doi:10.2172/1484349. OSTI 1484349. S2CID 139380070.
Konagai, Makoto; Sugimoto, Mitsunori; Takahashi, Kiyoshi (1978-12-01). "High efficiency GaAs thin film solar cells by peeled film technology". Journal of Crystal Growth. 45: 277–280. Bibcode:1978JCrGr..45..277K. doi:10.1016/0022-0248(78)90449-9. ISSN 0022-0248.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E.; Ptak, Aaron J.; Schulte, Kevin L. (2021-06-20). "(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics". 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Fort Lauderdale, FL, USA: IEEE. pp. 1118–1120. doi:10.1109/PVSC43889.2021.9518754. ISBN 978-1-6654-1922-2. OSTI 1869274. S2CID 237319505.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Philipps, Simon P.; Bett, Andreas W.; Horowitz, Kelsey; Kurtz, Sarah (2015-12-01). Current Status of Concentrator Photovoltaic (CPV) Technology (Report). doi:10.2172/1351597. OSTI 1351597.
Hall, Robert N.; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O. (1962). "Coherent Light Emission From GaAs Junctions". Physical Review Letters. 9 (9): 366–369. Bibcode:1962PhRvL...9..366H. doi:10.1103/PhysRevLett.9.366.
Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Vasiukov, S.; Chiossi, F.; Braggio, C.; et al. (2019). "GaAs as a Bright Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c² Dark Matter". IEEE Transactions on Nuclear Science. 66 (11). Institute of Electrical and Electronics Engineers (IEEE): 2333–2337. Bibcode:2019ITNS...66.2333V. doi:10.1109/tns.2019.2946725. ISSN 0018-9499. S2CID 208208697.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989: 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Pätzold, O.; Gärtner, G.; Irmer, G. (2002). "Boron Site Distribution in Doped GaAs". Physica Status Solidi B. 232 (2): 314–322. Bibcode:2002PSSBR.232..314P. doi:10.1002/1521-3951(200208)232:2<314::AID-PSSB314>3.0.CO;2-#. ISSN 0370-1972.
Spitzer, W. G.; Whelan, J. M. (1959-04-01). "Infrared Absorption and Electron Effective Mass in n -Type Gallium Arsenide". Physical Review. 114 (1): 59–63. Bibcode:1959PhRv..114...59S. doi:10.1103/PhysRev.114.59. ISSN 0031-899X.
Sturge, M. D. (1962-08-01). "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV". Physical Review. 127 (3): 768–773. Bibcode:1962PhRv..127..768S. doi:10.1103/PhysRev.127.768. ISSN 0031-899X.
Osamura, Kozo; Murakami, Yotaro (1972). "Free Carrier Absorption in n -GaAs". Japanese Journal of Applied Physics. 11 (3): 365–371. Bibcode:1972JaJAP..11..365O. doi:10.1143/JJAP.11.365. ISSN 0021-4922. S2CID 120981460.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034: 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.
Shenai-Khatkhate, D V; Goyette, R; DiCarlo, R L; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.
Bomhard, E. M.; Gelbke, H.; Schenk, H.; Williams, G. M.; Cohen, S. M. (2013). "Evaluation of the carcinogenicity of gallium arsenide". Critical Reviews in Toxicology. 43 (5): 436–466. doi:10.3109/10408444.2013.792329. PMID 23706044. S2CID 207505903.

dx.doi.org

Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany; Ptak, Aaron J. (2018-11-27). A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells (Report). doi:10.2172/1484349. OSTI 1484349. S2CID 139380070.

fraunhofer.de

ise.fraunhofer.de

"Record Efficiency of 68.9% for GaAs Thin Film Photovoltaic Cell Under Laser Light - Fraunhofer ISE". Fraunhofer Institute for Solar Energy Systems ISE. 28 June 2021. Retrieved 2022-10-11.

gla.ac.uk

ppephysics.gla.ac.uk

Glasgow University report on CERN detector. Ppewww.physics.gla.ac.uk. Retrieved on 2013-10-16.

harvard.edu

ui.adsabs.harvard.edu

Schnitzer, I.; et al. (1993). "Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures". Applied Physics Letters. 62 (2): 131. Bibcode:1993ApPhL..62..131S. doi:10.1063/1.109348. S2CID 14611939.
Papež, Nikola; Gajdoš, Adam; Dallaev, Rashid; Sobola, Dinara; Sedlák, Petr; Motúz, Rastislav; Nebojsa, Alois; Grmela, Lubomír (2020-04-30). "Performance analysis of GaAs based solar cells under gamma irradiation". Applied Surface Science. 510: 145329. Bibcode:2020ApSS..51045329P. doi:10.1016/j.apsusc.2020.145329. ISSN 0169-4332. S2CID 213661192.
Konagai, Makoto; Sugimoto, Mitsunori; Takahashi, Kiyoshi (1978-12-01). "High efficiency GaAs thin film solar cells by peeled film technology". Journal of Crystal Growth. 45: 277–280. Bibcode:1978JCrGr..45..277K. doi:10.1016/0022-0248(78)90449-9. ISSN 0022-0248.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Hall, Robert N.; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O. (1962). "Coherent Light Emission From GaAs Junctions". Physical Review Letters. 9 (9): 366–369. Bibcode:1962PhRvL...9..366H. doi:10.1103/PhysRevLett.9.366.
Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Vasiukov, S.; Chiossi, F.; Braggio, C.; et al. (2019). "GaAs as a Bright Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c² Dark Matter". IEEE Transactions on Nuclear Science. 66 (11). Institute of Electrical and Electronics Engineers (IEEE): 2333–2337. Bibcode:2019ITNS...66.2333V. doi:10.1109/tns.2019.2946725. ISSN 0018-9499. S2CID 208208697.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989: 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Pätzold, O.; Gärtner, G.; Irmer, G. (2002). "Boron Site Distribution in Doped GaAs". Physica Status Solidi B. 232 (2): 314–322. Bibcode:2002PSSBR.232..314P. doi:10.1002/1521-3951(200208)232:2<314::AID-PSSB314>3.0.CO;2-#. ISSN 0370-1972.
Spitzer, W. G.; Whelan, J. M. (1959-04-01). "Infrared Absorption and Electron Effective Mass in n -Type Gallium Arsenide". Physical Review. 114 (1): 59–63. Bibcode:1959PhRv..114...59S. doi:10.1103/PhysRev.114.59. ISSN 0031-899X.
Sturge, M. D. (1962-08-01). "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV". Physical Review. 127 (3): 768–773. Bibcode:1962PhRv..127..768S. doi:10.1103/PhysRev.127.768. ISSN 0031-899X.
Osamura, Kozo; Murakami, Yotaro (1972). "Free Carrier Absorption in n -GaAs". Japanese Journal of Applied Physics. 11 (3): 365–371. Bibcode:1972JaJAP..11..365O. doi:10.1143/JJAP.11.365. ISSN 0021-4922. S2CID 120981460.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034: 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.
Shenai-Khatkhate, D V; Goyette, R; DiCarlo, R L; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

hubblesite.org

"Hubble's Instruments Including Control and Support Systems (Cutaway)". HubbleSite.org. Retrieved 2022-10-11.

ieee.org

ieeexplore.ieee.org

Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E.; Ptak, Aaron J.; Schulte, Kevin L. (2021-06-20). "(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics". 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Fort Lauderdale, FL, USA: IEEE. pp. 1118–1120. doi:10.1109/PVSC43889.2021.9518754. ISBN 978-1-6654-1922-2. OSTI 1869274. S2CID 237319505.

intechopen.com

Yamaguchi, Masafumi (2021-04-14), Muzibur Rahman, Mohammed; Mohammed Asiri, Abdullah; Khan, Anish; Inamuddin (eds.), "High-Efficiency GaAs-Based Solar Cells", Post-Transition Metals, IntechOpen, doi:10.5772/intechopen.94365, ISBN 978-1-83968-260-5, S2CID 228807831, retrieved 2022-10-11

isolarparts.com

"Rocket Lab unveils space solar cell with 33.3% efficiency". solarparts (in Korean). 10 March 2022. Retrieved 2022-10-12.

iucr.org

journals.iucr.org

Straumanis, M. E.; Kim, C. D. (1965-08-10). "Phase extent of gallium arsenide determined by the lattice constant and density method". Acta Crystallographica. 19 (2): 256–259. doi:10.1107/S0365110X65003183. ISSN 0365-110X.

nih.gov

pubmed.ncbi.nlm.nih.gov

Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018). "Black GaAs by Metal-Assisted Chemical Etching". ACS Applied Materials & Interfaces. 10 (39): 33434–33440. doi:10.1021/acsami.8b10370. ISSN 1944-8244. PMID 30191706. S2CID 206490133.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Bomhard, E. M.; Gelbke, H.; Schenk, H.; Williams, G. M.; Cohen, S. M. (2013). "Evaluation of the carcinogenicity of gallium arsenide". Critical Reviews in Toxicology. 43 (5): 436–466. doi:10.3109/10408444.2013.792329. PMID 23706044. S2CID 207505903.

pubchem.ncbi.nlm.nih.gov

PubChem. "Hazardous Substances Data Bank (HSDB) : 4376". pubchem.ncbi.nlm.nih.gov. Retrieved 2024-10-09.

ncbi.nlm.nih.gov

Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.

ntp.niehs.nih.gov

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