Gallium arsenide (English Wikipedia)

Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.

books.google.com (Global: 3^rd place; English: 3^rd place)

V. M., Goldschmidt (1926). "Geochemische Verteilungsgesetze der Elemente". Skrifter Udgivne Af Videnskabsselskabet I Christiania. I. Mathematisk-naturvidenskabelig Klasse (in German) (8). Oslo: I kommisjon hos Jacob Dybwad: 34, 100.
Schubert, E. Fred (2023-03-11). Light-Emitting Diodes (4th Edition, 2023). E. Fred Schubert. ISBN 978-0-9863826-7-3.
Dennis Fisher; I. J. Bahl (1995). Gallium Arsenide IC Applications Handbook. Vol. 1. Elsevier. p. 61. ISBN 978-0-12-257735-2. 'Clear search' to see pages
Ye, Peide D.; Xuan, Yi; Wu, Yanqing; Xu, Min (2010). "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model". In Oktyabrsky, Serge; Ye, Peide (eds.). Fundamentals of III-V Semiconductor MOSFETs. Springer Science & Business Media. pp. 173–194. doi:10.1007/978-1-4419-1547-4_7. ISBN 978-1-4419-1547-4.
Cabrera, Rowan (2019). Electronic Devices and Circuits. EDTECH. p. 35. ISBN 9781839473838. Retrieved 20 January 2022.

ca.gov (Global: 421^st place; English: 263^rd place)

oehha.ca.gov

"Chemicals Listed Effective August 1, 2008 as Known to the State of California to Cause Cancer or Reproductive Toxicity: gallium arsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide". OEHHA. 2008-08-01.

cern.ch (Global: 1,959^th place; English: 1,611^th place)

cds.cern.ch

Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.; Hey, G. (2009). "2: From Extraterrestrial to Terrestrial Applications". High-Efficient Low-Cost Photovoltaics: Recent Developments. Springer. doi:10.1007/978-3-540-79359-5. ISBN 978-3-540-79359-5.

doi.org (Global: 2^nd place; English: 2^nd place)

doi.org

Welker, H. (1952-11-01). "Über neue halbleitende Verbindungen". Zeitschrift für Naturforschung A. 7 (11): 744–749. Bibcode:1952ZNatA...7..744W. doi:10.1515/zna-1952-1110. ISSN 1865-7109.
Straumanis, M. E.; Kim, C. D. (1965-08-10). "Phase extent of gallium arsenide determined by the lattice constant and density method". Acta Crystallographica. 19 (2): 256–259. Bibcode:1965AcCry..19..256S. doi:10.1107/S0365110X65003183. ISSN 0365-110X.
Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018). "Black GaAs by Metal-Assisted Chemical Etching". ACS Applied Materials & Interfaces. 10 (39): 33434–33440. Bibcode:2018AAMI...1033434L. doi:10.1021/acsami.8b10370. ISSN 1944-8244. PMID 30191706. S2CID 206490133.
Ye, Peide D.; Xuan, Yi; Wu, Yanqing; Xu, Min (2010). "Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model". In Oktyabrsky, Serge; Ye, Peide (eds.). Fundamentals of III-V Semiconductor MOSFETs. Springer Science & Business Media. pp. 173–194. doi:10.1007/978-1-4419-1547-4_7. ISBN 978-1-4419-1547-4.
Schlesinger, T.E. (2001). "Gallium Arsenide". Encyclopedia of Materials: Science and Technology. Elsevier. pp. 3431–3435. doi:10.1016/B0-08-043152-6/00612-4. ISBN 9780080431529. Retrieved 27 January 2021.
Ishutkin, S.V.; Kagadey, V.A. (2015). "Design-processing features of microwave GaAs monolithic integrated circuits of a low-noise amplifier with a copper metallized frontside". Russian Microelectronics. 44 (6): 380–388. doi:10.1134/S1063739715060049.
Manes, G.F. (2005). "Gallium Arsenide Technology and Applications". Encyclopedia of RF and Microwave Engineering. Wiley. doi:10.1002/0471654507.eme143. ISBN 9780471270539.
Yin, Jun; Migas, Dmitri B.; Panahandeh-Fard, Majid; Chen, Shi; Wang, Zilong; Lova, Paola; Soci, Cesare (3 October 2013). "Charge Redistribution at GaAs/P3HT Heterointerfaces with Different Surface Polarity". The Journal of Physical Chemistry Letters. 4 (19): 3303–3309. doi:10.1021/jz401485t.
Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.; Hey, G. (2009). "2: From Extraterrestrial to Terrestrial Applications". High-Efficient Low-Cost Photovoltaics: Recent Developments. Springer. doi:10.1007/978-3-540-79359-5. ISBN 978-3-540-79359-5.
Schnitzer, I.; et al. (1993). "Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures". Applied Physics Letters. 62 (2): 131. Bibcode:1993ApPhL..62..131S. doi:10.1063/1.109348. S2CID 14611939.
Wang, X.; et al. (2013). "Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit". IEEE Journal of Photovoltaics. 3 (2): 737. Bibcode:2013IJPv....3..737W. doi:10.1109/JPHOTOV.2013.2241594. S2CID 36523127.
Yamaguchi, Masafumi (2021-04-14), Muzibur Rahman, Mohammed; Mohammed Asiri, Abdullah; Khan, Anish; Inamuddin (eds.), "High-Efficiency GaAs-Based Solar Cells", Post-Transition Metals, IntechOpen, doi:10.5772/intechopen.94365, ISBN 978-1-83968-260-5, S2CID 228807831, retrieved 2022-10-11
Haegel, Nancy; Kurtz, Sarah (November 2021). "Global Progress Toward Renewable Electricity: Tracking the Role of Solar". IEEE Journal of Photovoltaics. 11 (6) (published 20 September 2021): 1335–1342. Bibcode:2021IJPv...11.1335H. doi:10.1109/JPHOTOV.2021.3104149. ISSN 2156-3381. S2CID 239038321.
Papež, Nikola; Gajdoš, Adam; Dallaev, Rashid; Sobola, Dinara; Sedlák, Petr; Motúz, Rastislav; Nebojsa, Alois; Grmela, Lubomír (2020-04-30). "Performance analysis of GaAs based solar cells under gamma irradiation". Applied Surface Science. 510 145329. Bibcode:2020ApSS..51045329P. doi:10.1016/j.apsusc.2020.145329. ISSN 0169-4332. S2CID 213661192.
Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany; Ptak, Aaron J. (2018-11-27). A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells (Report). doi:10.2172/1484349. OSTI 1484349. S2CID 139380070.
Konagai, Makoto; Sugimoto, Mitsunori; Takahashi, Kiyoshi (1978-12-01). "High efficiency GaAs thin film solar cells by peeled film technology". Journal of Crystal Growth. 45: 277–280. Bibcode:1978JCrGr..45..277K. doi:10.1016/0022-0248(78)90449-9. ISSN 0022-0248.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E.; Ptak, Aaron J.; Schulte, Kevin L. (2021-06-20). "(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics". 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). Fort Lauderdale, FL, USA: IEEE. pp. 1118–1120. doi:10.1109/PVSC43889.2021.9518754. ISBN 978-1-6654-1922-2. OSTI 1869274. S2CID 237319505.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Philipps, Simon P.; Bett, Andreas W.; Horowitz, Kelsey; Kurtz, Sarah (2015-12-01). Current Status of Concentrator Photovoltaic (CPV) Technology (Report). doi:10.2172/1351597. OSTI 1351597.
Hall, Robert N.; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O. (1962). "Coherent Light Emission From GaAs Junctions". Physical Review Letters. 9 (9): 366–369. Bibcode:1962PhRvL...9..366H. doi:10.1103/PhysRevLett.9.366.
Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Vasiukov, S.; Chiossi, F.; Braggio, C.; et al. (2019). "GaAs as a Bright Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c² Dark Matter". IEEE Transactions on Nuclear Science. 66 (11). Institute of Electrical and Electronics Engineers (IEEE): 2333–2337. Bibcode:2019ITNS...66.2333V. doi:10.1109/tns.2019.2946725. ISSN 0018-9499. S2CID 208208697.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Pätzold, O.; Gärtner, G.; Irmer, G. (2002). "Boron Site Distribution in Doped GaAs". Physica Status Solidi B. 232 (2): 314–322. Bibcode:2002PSSBR.232..314P. doi:10.1002/1521-3951(200208)232:2<314::AID-PSSB314>3.0.CO;2-#. ISSN 0370-1972.
Spitzer, W. G.; Whelan, J. M. (1959-04-01). "Infrared Absorption and Electron Effective Mass in n -Type Gallium Arsenide". Physical Review. 114 (1): 59–63. Bibcode:1959PhRv..114...59S. doi:10.1103/PhysRev.114.59. ISSN 0031-899X.
Sturge, M. D. (1962-08-01). "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV". Physical Review. 127 (3): 768–773. Bibcode:1962PhRv..127..768S. doi:10.1103/PhysRev.127.768. ISSN 0031-899X.
Osamura, Kozo; Murakami, Yotaro (1972). "Free Carrier Absorption in n -GaAs". Japanese Journal of Applied Physics. 11 (3): 365–371. Bibcode:1972JaJAP..11..365O. doi:10.1143/JJAP.11.365. ISSN 0021-4922. S2CID 120981460.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.
Ayasli, Y.; Mozzi, R.L.; Vorhaus, J.L.; Reynolds, L.D.; Pucel, R.A. (1982). "A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier". IEEE Transactions on Microwave Theory and Techniques. 30 (7): 976–981. doi:10.1109/TMTT.1982.1131186. ISSN 1557-9670.
Ayasli, Y.; Reynolds, L.D.; Mozzi, R.L.; Hanes, L.K. (1984). "2-20-GHz GaAs Traveling-Wave Power Amplifier". IEEE Transactions on Microwave Theory and Techniques. 32 (3): 290–295. doi:10.1109/TMTT.1984.1132667. ISSN 1557-9670.
Shenai-Khatkhate, D V; Goyette, R; DiCarlo, R L; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.
Bomhard, E. M.; Gelbke, H.; Schenk, H.; Williams, G. M.; Cohen, S. M. (2013). "Evaluation of the carcinogenicity of gallium arsenide". Critical Reviews in Toxicology. 43 (5): 436–466. doi:10.3109/10408444.2013.792329. PMID 23706044. S2CID 207505903.

dx.doi.org

Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany; Ptak, Aaron J. (2018-11-27). A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells (Report). doi:10.2172/1484349. OSTI 1484349. S2CID 139380070.

fraunhofer.de (Global: 7,696^th place; English: 9,995^th place)

ise.fraunhofer.de

"Record Efficiency of 68.9% for GaAs Thin Film Photovoltaic Cell Under Laser Light - Fraunhofer ISE". Fraunhofer Institute for Solar Energy Systems ISE. 28 June 2021. Retrieved 2022-10-11.

gla.ac.uk (Global: 2,948^th place; English: 1,879^th place)

ppephysics.gla.ac.uk

Glasgow University report on CERN detector. Ppewww.physics.gla.ac.uk. Retrieved on 2013-10-16.

harvard.edu (Global: 18^th place; English: 17^th place)

ui.adsabs.harvard.edu

Welker, H. (1952-11-01). "Über neue halbleitende Verbindungen". Zeitschrift für Naturforschung A. 7 (11): 744–749. Bibcode:1952ZNatA...7..744W. doi:10.1515/zna-1952-1110. ISSN 1865-7109.
Straumanis, M. E.; Kim, C. D. (1965-08-10). "Phase extent of gallium arsenide determined by the lattice constant and density method". Acta Crystallographica. 19 (2): 256–259. Bibcode:1965AcCry..19..256S. doi:10.1107/S0365110X65003183. ISSN 0365-110X.
Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018). "Black GaAs by Metal-Assisted Chemical Etching". ACS Applied Materials & Interfaces. 10 (39): 33434–33440. Bibcode:2018AAMI...1033434L. doi:10.1021/acsami.8b10370. ISSN 1944-8244. PMID 30191706. S2CID 206490133.
Schnitzer, I.; et al. (1993). "Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures". Applied Physics Letters. 62 (2): 131. Bibcode:1993ApPhL..62..131S. doi:10.1063/1.109348. S2CID 14611939.
Wang, X.; et al. (2013). "Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit". IEEE Journal of Photovoltaics. 3 (2): 737. Bibcode:2013IJPv....3..737W. doi:10.1109/JPHOTOV.2013.2241594. S2CID 36523127.
Haegel, Nancy; Kurtz, Sarah (November 2021). "Global Progress Toward Renewable Electricity: Tracking the Role of Solar". IEEE Journal of Photovoltaics. 11 (6) (published 20 September 2021): 1335–1342. Bibcode:2021IJPv...11.1335H. doi:10.1109/JPHOTOV.2021.3104149. ISSN 2156-3381. S2CID 239038321.
Papež, Nikola; Gajdoš, Adam; Dallaev, Rashid; Sobola, Dinara; Sedlák, Petr; Motúz, Rastislav; Nebojsa, Alois; Grmela, Lubomír (2020-04-30). "Performance analysis of GaAs based solar cells under gamma irradiation". Applied Surface Science. 510 145329. Bibcode:2020ApSS..51045329P. doi:10.1016/j.apsusc.2020.145329. ISSN 0169-4332. S2CID 213661192.
Konagai, Makoto; Sugimoto, Mitsunori; Takahashi, Kiyoshi (1978-12-01). "High efficiency GaAs thin film solar cells by peeled film technology". Journal of Crystal Growth. 45: 277–280. Bibcode:1978JCrGr..45..277K. doi:10.1016/0022-0248(78)90449-9. ISSN 0022-0248.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Hall, Robert N.; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O. (1962). "Coherent Light Emission From GaAs Junctions". Physical Review Letters. 9 (9): 366–369. Bibcode:1962PhRvL...9..366H. doi:10.1103/PhysRevLett.9.366.
Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter". Journal of Applied Physics. 123 (11): 114501. arXiv:1802.09171. Bibcode:2018JAP...123k4501D. doi:10.1063/1.5018343. ISSN 0021-8979. S2CID 56118568.
Vasiukov, S.; Chiossi, F.; Braggio, C.; et al. (2019). "GaAs as a Bright Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c² Dark Matter". IEEE Transactions on Nuclear Science. 66 (11). Institute of Electrical and Electronics Engineers (IEEE): 2333–2337. Bibcode:2019ITNS...66.2333V. doi:10.1109/tns.2019.2946725. ISSN 0018-9499. S2CID 208208697.
Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 989 164957. arXiv:2012.07550. Bibcode:2021NIMPA.98964957D. doi:10.1016/j.nima.2020.164957. S2CID 229158562.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Pätzold, O.; Gärtner, G.; Irmer, G. (2002). "Boron Site Distribution in Doped GaAs". Physica Status Solidi B. 232 (2): 314–322. Bibcode:2002PSSBR.232..314P. doi:10.1002/1521-3951(200208)232:2<314::AID-PSSB314>3.0.CO;2-#. ISSN 0370-1972.
Spitzer, W. G.; Whelan, J. M. (1959-04-01). "Infrared Absorption and Electron Effective Mass in n -Type Gallium Arsenide". Physical Review. 114 (1): 59–63. Bibcode:1959PhRv..114...59S. doi:10.1103/PhysRev.114.59. ISSN 0031-899X.
Sturge, M. D. (1962-08-01). "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV". Physical Review. 127 (3): 768–773. Bibcode:1962PhRv..127..768S. doi:10.1103/PhysRev.127.768. ISSN 0031-899X.
Osamura, Kozo; Murakami, Yotaro (1972). "Free Carrier Absorption in n -GaAs". Japanese Journal of Applied Physics. 11 (3): 365–371. Bibcode:1972JaJAP..11..365O. doi:10.1143/JJAP.11.365. ISSN 0021-4922. S2CID 120981460.
Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic n-type GaAs". Nuclear Instruments and Methods in Physics Research Section A. 1034 166803. arXiv:2203.15056. Bibcode:2022NIMPA103466803D. doi:10.1016/j.nima.2022.166803. S2CID 247779262.
Shenai-Khatkhate, D V; Goyette, R; DiCarlo, R L; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

hubblesite.org (Global: 6,632^nd place; English: 7,237^th place)

"Hubble's Instruments Including Control and Support Systems (Cutaway)". HubbleSite.org. Retrieved 2022-10-11.

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ieeexplore.ieee.org

Ayasli, Y.; Mozzi, R.L.; Vorhaus, J.L.; Reynolds, L.D.; Pucel, R.A. (1982). "A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier". IEEE Transactions on Microwave Theory and Techniques. 30 (7): 976–981. doi:10.1109/TMTT.1982.1131186. ISSN 1557-9670.
Ayasli, Y.; Reynolds, L.D.; Mozzi, R.L.; Hanes, L.K. (1984). "2-20-GHz GaAs Traveling-Wave Power Amplifier". IEEE Transactions on Microwave Theory and Techniques. 32 (3): 290–295. doi:10.1109/TMTT.1984.1132667. ISSN 1557-9670.

intechopen.com (Global: low place; English: low place)

Yamaguchi, Masafumi (2021-04-14), Muzibur Rahman, Mohammed; Mohammed Asiri, Abdullah; Khan, Anish; Inamuddin (eds.), "High-Efficiency GaAs-Based Solar Cells", Post-Transition Metals, IntechOpen, doi:10.5772/intechopen.94365, ISBN 978-1-83968-260-5, S2CID 228807831, retrieved 2022-10-11

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"Rocket Lab unveils space solar cell with 33.3% efficiency". solarparts (in Korean). 10 March 2022. Retrieved 2022-10-12.

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journals.iucr.org

Straumanis, M. E.; Kim, C. D. (1965-08-10). "Phase extent of gallium arsenide determined by the lattice constant and density method". Acta Crystallographica. 19 (2): 256–259. Bibcode:1965AcCry..19..256S. doi:10.1107/S0365110X65003183. ISSN 0365-110X.

nih.gov (Global: 4^th place; English: 4^th place)

pubmed.ncbi.nlm.nih.gov

Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018). "Black GaAs by Metal-Assisted Chemical Etching". ACS Applied Materials & Interfaces. 10 (39): 33434–33440. Bibcode:2018AAMI...1033434L. doi:10.1021/acsami.8b10370. ISSN 1944-8244. PMID 30191706. S2CID 206490133.
Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12). "Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics". Nature Communications. 4 (1): 1577. Bibcode:2013NatCo...4.1577C. doi:10.1038/ncomms2583. ISSN 2041-1723. PMID 23481385. S2CID 205315999.
Papež, Nikola; Dallaev, Rashid; Ţălu, Ştefan; Kaštyl, Jaroslav (2021-06-04). "Overview of the Current State of Gallium Arsenide-Based Solar Cells". Materials. 14 (11): 3075. Bibcode:2021Mate...14.3075P. doi:10.3390/ma14113075. ISSN 1996-1944. PMC 8200097. PMID 34199850.
Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition". Physical Review B. 36 (9): 4748–4753. Bibcode:1987PhRvB..36.4748B. doi:10.1103/PhysRevB.36.4748. ISSN 0163-1829. PMID 9943488.
Bomhard, E. M.; Gelbke, H.; Schenk, H.; Williams, G. M.; Cohen, S. M. (2013). "Evaluation of the carcinogenicity of gallium arsenide". Critical Reviews in Toxicology. 43 (5): 436–466. doi:10.3109/10408444.2013.792329. PMID 23706044. S2CID 207505903.

pubchem.ncbi.nlm.nih.gov

PubChem. "Hazardous Substances Data Bank (HSDB) : 4376". pubchem.ncbi.nlm.nih.gov. Retrieved 2024-10-09.

ncbi.nlm.nih.gov

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Gallium arsenide (English Wikipedia)

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