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GeSbTe (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "GeSbTe" in English language version.

refsWebsite
Global rank English rank
13doi.org
2nd place
2nd place
10harvard.edu
18th place
17th place
5worldcat.org
5th place
5th place
4semanticscholar.org
11th place
8th place
2nih.gov
4th place
4th place
1handle.net
102nd place
76th place
1arxiv.org
69th place
59th place

arxiv.org

doi.org

  • Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette, Egbert Woelk; Dicarlo; Power; Amamchyan; Goyette; Woelk (2007). "Safer alternative liquid germanium precursors for MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  • Bosi, M.; Attolini, G.; Ferrari, C.; Frigeri, C.; Rimada Herrera, J.C.; Gombia, E.; Pelosi, C.; Peng, R.W. (2008). "MOVPE growth of homoepitaxial germanium". Journal of Crystal Growth. 310 (14): 3282. Bibcode:2008JCrGr.310.3282B. doi:10.1016/j.jcrysgro.2008.04.009.
  • Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G. (2008). "Homo and hetero epitaxy of Germanium using isobutylgermane". Thin Solid Films. 517 (1): 404–406. Bibcode:2008TSF...517..404A. doi:10.1016/j.tsf.2008.08.137.
  • M. Longo, O. Salicio, C. Wiemer, R. Fallica, A. Molle, M. Fanciulli, C. Giesen, B. Seitzinger,P.K. Baumann, M. Heuken, S. Rushworth; Salicio; Wiemer; Fallica; Molle; Fanciulli; Giesen; Seitzinger; Baumann; Heuken; Rushworth (2008). "Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications". Journal of Crystal Growth. 310 (23): 5053–5057. Bibcode:2008JCrGr.310.5053L. doi:10.1016/j.jcrysgro.2008.07.054.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  • A. Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, O. Salicio, A. Pirovano, E. Varesi, S. Rushworth, W. Gawelda, J. Siegel; Plausinaitiene; Skapas; Wiemer; Salicio; Pirovano; Varesi; Rushworth; Gawelda; Siegel (2008). "Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications". Chemistry of Materials. 20 (11): 3557. doi:10.1021/cm8004584. hdl:10261/93002.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  • X. Shi; M. Schaekers; F. Leys; R. Loo; M. Caymax; R. Brus; C. Zhao; B. Lamare; E. Woelk; D. Shenai (2006). "Germanium Precursors for Ge and SiGe Deposition". ECS Transactions. 3: 849. doi:10.1149/1.2355880. S2CID 110550188.
  • Morales-Sánchez, E.; Prokhorov, E. F.; Mendoza-Galván, A.; González-Hernández, J. (2002-01-15). "Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films". Journal of Applied Physics. 91 (2). AIP Publishing: 697–702. Bibcode:2002JAP....91..697M. doi:10.1063/1.1427146. ISSN 0021-8979.
  • Krebs, Daniel; Raoux, Simone; Rettner, Charles T.; Burr, Geoffrey W.; Salinga, Martin; Wuttig, Matthias (2009). "Threshold field of phase change memory materials measured using phase change bridge devices". Applied Physics Letters. 95 (8): 082101. Bibcode:2009ApPhL..95h2101K. doi:10.1063/1.3210792.
  • Pirovano, A.; Lacaita, A.L.; Benvenuti, A.; Pellizzer, F.; Bez, R. (2004). "Electronic Switching in Phase-Change Memories". IEEE Transactions on Electron Devices. 51 (3). Institute of Electrical and Electronics Engineers (IEEE): 452–459. Bibcode:2004ITED...51..452P. doi:10.1109/ted.2003.823243. ISSN 0018-9383. S2CID 43106563.
  • Kolobov, Alexander V.; Fons, Paul; Frenkel, Anatoly I.; Ankudinov, Alexei L.; Tominaga, Junji; Uruga, Tomoya (2004-09-12). "Understanding the phase-change mechanism of rewritable optical media". Nature Materials. 3 (10). Springer Nature: 703–708. Bibcode:2004NatMa...3..703K. doi:10.1038/nmat1215. ISSN 1476-1122. PMID 15359344. S2CID 677085.
  • Wuttig, Matthias; Lüsebrink, Daniel; Wamwangi, Daniel; Wełnic, Wojciech; Gilleßen, Michael; Dronskowski, Richard (2006-12-17). "The role of vacancies and local distortions in the design of new phase-change materials". Nature Materials. 6 (2). Springer Nature: 122–128. doi:10.1038/nmat1807. ISSN 1476-1122. PMID 17173032.
  • Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
  • Coombs, J. H.; Jongenelis, A. P. J. M.; van Es-Spiekman, W.; Jacobs, B. A. J. (1995-10-15). "Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth". Journal of Applied Physics. 78 (8). AIP Publishing: 4906–4917. Bibcode:1995JAP....78.4906C. doi:10.1063/1.359779. ISSN 0021-8979.

handle.net

hdl.handle.net

  • A. Abrutis, V. Plausinaitiene, M. Skapas, C. Wiemer, O. Salicio, A. Pirovano, E. Varesi, S. Rushworth, W. Gawelda, J. Siegel; Plausinaitiene; Skapas; Wiemer; Salicio; Pirovano; Varesi; Rushworth; Gawelda; Siegel (2008). "Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications". Chemistry of Materials. 20 (11): 3557. doi:10.1021/cm8004584. hdl:10261/93002.{{cite journal}}: CS1 maint: multiple names: authors list (link)

harvard.edu

ui.adsabs.harvard.edu

  • Deo V. Shenai, Ronald L. DiCarlo, Michael B. Power, Artashes Amamchyan, Randall J. Goyette, Egbert Woelk; Dicarlo; Power; Amamchyan; Goyette; Woelk (2007). "Safer alternative liquid germanium precursors for MOVPE". Journal of Crystal Growth. 298: 172–175. Bibcode:2007JCrGr.298..172S. doi:10.1016/j.jcrysgro.2006.10.194.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  • Bosi, M.; Attolini, G.; Ferrari, C.; Frigeri, C.; Rimada Herrera, J.C.; Gombia, E.; Pelosi, C.; Peng, R.W. (2008). "MOVPE growth of homoepitaxial germanium". Journal of Crystal Growth. 310 (14): 3282. Bibcode:2008JCrGr.310.3282B. doi:10.1016/j.jcrysgro.2008.04.009.
  • Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G. (2008). "Homo and hetero epitaxy of Germanium using isobutylgermane". Thin Solid Films. 517 (1): 404–406. Bibcode:2008TSF...517..404A. doi:10.1016/j.tsf.2008.08.137.
  • M. Longo, O. Salicio, C. Wiemer, R. Fallica, A. Molle, M. Fanciulli, C. Giesen, B. Seitzinger,P.K. Baumann, M. Heuken, S. Rushworth; Salicio; Wiemer; Fallica; Molle; Fanciulli; Giesen; Seitzinger; Baumann; Heuken; Rushworth (2008). "Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications". Journal of Crystal Growth. 310 (23): 5053–5057. Bibcode:2008JCrGr.310.5053L. doi:10.1016/j.jcrysgro.2008.07.054.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  • Morales-Sánchez, E.; Prokhorov, E. F.; Mendoza-Galván, A.; González-Hernández, J. (2002-01-15). "Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films". Journal of Applied Physics. 91 (2). AIP Publishing: 697–702. Bibcode:2002JAP....91..697M. doi:10.1063/1.1427146. ISSN 0021-8979.
  • Krebs, Daniel; Raoux, Simone; Rettner, Charles T.; Burr, Geoffrey W.; Salinga, Martin; Wuttig, Matthias (2009). "Threshold field of phase change memory materials measured using phase change bridge devices". Applied Physics Letters. 95 (8): 082101. Bibcode:2009ApPhL..95h2101K. doi:10.1063/1.3210792.
  • Pirovano, A.; Lacaita, A.L.; Benvenuti, A.; Pellizzer, F.; Bez, R. (2004). "Electronic Switching in Phase-Change Memories". IEEE Transactions on Electron Devices. 51 (3). Institute of Electrical and Electronics Engineers (IEEE): 452–459. Bibcode:2004ITED...51..452P. doi:10.1109/ted.2003.823243. ISSN 0018-9383. S2CID 43106563.
  • Kolobov, Alexander V.; Fons, Paul; Frenkel, Anatoly I.; Ankudinov, Alexei L.; Tominaga, Junji; Uruga, Tomoya (2004-09-12). "Understanding the phase-change mechanism of rewritable optical media". Nature Materials. 3 (10). Springer Nature: 703–708. Bibcode:2004NatMa...3..703K. doi:10.1038/nmat1215. ISSN 1476-1122. PMID 15359344. S2CID 677085.
  • Caravati, Sebastiano; Bernasconi, Marco; Kühne, Thomas D.; Krack, Matthias; Parrinello, Michele (2007). "Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials". Applied Physics Letters. 91 (17): 171906. arXiv:0708.1302. Bibcode:2007ApPhL..91q1906C. doi:10.1063/1.2801626. S2CID 119628572.
  • Coombs, J. H.; Jongenelis, A. P. J. M.; van Es-Spiekman, W.; Jacobs, B. A. J. (1995-10-15). "Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth". Journal of Applied Physics. 78 (8). AIP Publishing: 4906–4917. Bibcode:1995JAP....78.4906C. doi:10.1063/1.359779. ISSN 0021-8979.

nih.gov

pubmed.ncbi.nlm.nih.gov

  • Kolobov, Alexander V.; Fons, Paul; Frenkel, Anatoly I.; Ankudinov, Alexei L.; Tominaga, Junji; Uruga, Tomoya (2004-09-12). "Understanding the phase-change mechanism of rewritable optical media". Nature Materials. 3 (10). Springer Nature: 703–708. Bibcode:2004NatMa...3..703K. doi:10.1038/nmat1215. ISSN 1476-1122. PMID 15359344. S2CID 677085.
  • Wuttig, Matthias; Lüsebrink, Daniel; Wamwangi, Daniel; Wełnic, Wojciech; Gilleßen, Michael; Dronskowski, Richard (2006-12-17). "The role of vacancies and local distortions in the design of new phase-change materials". Nature Materials. 6 (2). Springer Nature: 122–128. doi:10.1038/nmat1807. ISSN 1476-1122. PMID 17173032.

semanticscholar.org

api.semanticscholar.org

worldcat.org

search.worldcat.org

  • Morales-Sánchez, E.; Prokhorov, E. F.; Mendoza-Galván, A.; González-Hernández, J. (2002-01-15). "Determination of the glass transition and nucleation temperatures in Ge2Sb2Te5 sputtered films". Journal of Applied Physics. 91 (2). AIP Publishing: 697–702. Bibcode:2002JAP....91..697M. doi:10.1063/1.1427146. ISSN 0021-8979.
  • Pirovano, A.; Lacaita, A.L.; Benvenuti, A.; Pellizzer, F.; Bez, R. (2004). "Electronic Switching in Phase-Change Memories". IEEE Transactions on Electron Devices. 51 (3). Institute of Electrical and Electronics Engineers (IEEE): 452–459. Bibcode:2004ITED...51..452P. doi:10.1109/ted.2003.823243. ISSN 0018-9383. S2CID 43106563.
  • Kolobov, Alexander V.; Fons, Paul; Frenkel, Anatoly I.; Ankudinov, Alexei L.; Tominaga, Junji; Uruga, Tomoya (2004-09-12). "Understanding the phase-change mechanism of rewritable optical media". Nature Materials. 3 (10). Springer Nature: 703–708. Bibcode:2004NatMa...3..703K. doi:10.1038/nmat1215. ISSN 1476-1122. PMID 15359344. S2CID 677085.
  • Wuttig, Matthias; Lüsebrink, Daniel; Wamwangi, Daniel; Wełnic, Wojciech; Gilleßen, Michael; Dronskowski, Richard (2006-12-17). "The role of vacancies and local distortions in the design of new phase-change materials". Nature Materials. 6 (2). Springer Nature: 122–128. doi:10.1038/nmat1807. ISSN 1476-1122. PMID 17173032.
  • Coombs, J. H.; Jongenelis, A. P. J. M.; van Es-Spiekman, W.; Jacobs, B. A. J. (1995-10-15). "Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth". Journal of Applied Physics. 78 (8). AIP Publishing: 4906–4917. Bibcode:1995JAP....78.4906C. doi:10.1063/1.359779. ISSN 0021-8979.