Ghavam Shahidi (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Ghavam Shahidi" in English language version.

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businessweek.com

"A Whole New World of Chips". Business Week. Archived from the original on 2011-02-21.

doi.org

Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1986). "Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths". 1986 International Electron Devices Meeting. pp. 824–825. doi:10.1109/IEDM.1986.191325. S2CID 27558025.
Chou, Stephen Y.; Smith, Henry I.; Antoniadis, Dimitri A. (1986). "Sub-100-nm channel-length transistors fabricated using x-ray lithography". Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 4 (1): 253–255. Bibcode:1986JVSTB...4..253C. doi:10.1116/1.583451. ISSN 0734-211X.
Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1988). "Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's". IEEE Transactions on Electron Devices. 35 (12): 2430–. Bibcode:1988ITED...35.2430S. doi:10.1109/16.8835.

eetimes.com

"SOI scientist counted among latest IBM fellows". EE Times. 30 May 2001.

ethw.org

"Ghavam Shahidi". Engineering and Technology History. Institute of Electrical and Electronics Engineers. 26 January 2016. Retrieved 16 September 2019.

harvard.edu

ui.adsabs.harvard.edu

Chou, Stephen Y.; Smith, Henry I.; Antoniadis, Dimitri A. (1986). "Sub-100-nm channel-length transistors fabricated using x-ray lithography". Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 4 (1): 253–255. Bibcode:1986JVSTB...4..253C. doi:10.1116/1.583451. ISSN 0734-211X.
Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1988). "Reduction of hot-electron-generated substrate current in sub-100-nm channel length Si MOSFET's". IEEE Transactions on Electron Devices. 35 (12): 2430–. Bibcode:1988ITED...35.2430S. doi:10.1109/16.8835.

ieee.org

ieeexplore.ieee.org

"Ghavam G. Shahidi". IEEE Xplore. Institute of Electrical and Electronics Engineers. Retrieved 16 September 2019.

eds.ieee.org

"Past J.J. Ebers Award Winners". IEEE Electron Devices Society. Institute of Electrical and Electronics Engineers. Retrieved 16 September 2019.

semanticscholar.org

api.semanticscholar.org

Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1986). "Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths". 1986 International Electron Devices Meeting. pp. 824–825. doi:10.1109/IEDM.1986.191325. S2CID 27558025.

web.archive.org

"A Whole New World of Chips". Business Week. Archived from the original on 2011-02-21.

worldcat.org

search.worldcat.org

Chou, Stephen Y.; Smith, Henry I.; Antoniadis, Dimitri A. (1986). "Sub-100-nm channel-length transistors fabricated using x-ray lithography". Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 4 (1): 253–255. Bibcode:1986JVSTB...4..253C. doi:10.1116/1.583451. ISSN 0734-211X.