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Shahidi, Ghavam G.; Antoniadis, Dimitri A.; Smith, Henry I. (December 1986). "Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths". 1986 International Electron Devices Meeting. pp. 824–825. doi:10.1109/IEDM.1986.191325. S2CID27558025.