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Hafnium(IV) oxide (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Hafnium(IV) oxide" in English language version.

refsWebsite
Global rank English rank
9doi.org
2nd place
2nd place
7harvard.edu
18th place
17th place
2semanticscholar.org
11th place
8th place
1arxiv.org
69th place
59th place
1intel.com
1,118th place
825th place
1imec-int.com
low place
low place
1ferroelectric-memory.com
low place
low place
1omega.co.uk
low place
low place
1technologyreview.com
1,943rd place
1,253rd place

arxiv.org

doi.org

  • Bersch, Eric; et al. (2008). "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
  • V. Miikkulainen; et al. (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2). Table III. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
  • T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.
  • T. S. Boscke (2011). "Ferroelectricity in hafnium oxide thin films". Applied Physics Letters. 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
  • J.H. Choi; et al. (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R. 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.
  • H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science. 47 (21): 7399–7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y. S2CID 7806254.
  • G. D. Wilk; R. M. Wallace; J. M. Anthony (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics. 89 (10): 5243–5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065., Table 1
  • K.-L. Lin; et al. (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109 (8): 084104–084104–7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.
  • T. S. Böscke; J. Müller; D. Bräuhaus (7 Dec 2011). "Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors". 2011 International Electron Devices Meeting. IEEE. pp. 24.5.1–24.5.4. doi:10.1109/IEDM.2011.6131606. ISBN 978-1-4577-0505-2.

ferroelectric-memory.com

harvard.edu

ui.adsabs.harvard.edu

  • Bersch, Eric; et al. (2008). "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
  • V. Miikkulainen; et al. (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2). Table III. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
  • T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.
  • T. S. Boscke (2011). "Ferroelectricity in hafnium oxide thin films". Applied Physics Letters. 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
  • H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science. 47 (21): 7399–7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y. S2CID 7806254.
  • G. D. Wilk; R. M. Wallace; J. M. Anthony (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics. 89 (10): 5243–5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065., Table 1
  • K.-L. Lin; et al. (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109 (8): 084104–084104–7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.

imec-int.com

intel.com

omega.co.uk

semanticscholar.org

api.semanticscholar.org

technologyreview.com