Hafnium(IV) oxide (English Wikipedia)

Analysis of information sources in references of the Wikipedia article "Hafnium(IV) oxide" in English language version.

refsWebsite

Global rank English rank

10doi.org

2^nd place

7harvard.edu

18^th place

17^th place

2semanticscholar.org

11^th place

8^th place

1arxiv.org

69^th place

59^th place

1intel.com

1,118^th place

825^th place

1imec-int.com

low place

1ferroelectric-memory.com

low place

1omega.co.uk

low place

1technologyreview.com

1,943^rd place

1,253^rd place

arxiv.org

T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.

doi.org

Kornilov, A.N.; Ushakova, I.M.; Huber, E.J.; Holley, C.E. (1975). "The enthalpy of formation of hafnium dioxide". The Journal of Chemical Thermodynamics. 7: 21–26. doi:10.1016/0021-9614(75)90076-2.
Bersch, Eric; et al. (2008). "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
V. Miikkulainen; et al. (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2). Table III. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.
T. S. Boscke (2011). "Ferroelectricity in hafnium oxide thin films". Applied Physics Letters. 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
J.H. Choi; et al. (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R. 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science. 47 (21): 7399–7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y. S2CID 7806254.
G. D. Wilk; R. M. Wallace; J. M. Anthony (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics. 89 (10): 5243–5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065., Table 1
K.-L. Lin; et al. (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109 (8): 084104–084104–7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.
T. S. Böscke; J. Müller; D. Bräuhaus (7 Dec 2011). "Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors". 2011 International Electron Devices Meeting. IEEE. pp. 24.5.1–24.5.4. doi:10.1109/IEDM.2011.6131606. ISBN 978-1-4577-0505-2.

ferroelectric-memory.com

The Ferroelectric Memory Company (8 June 2017). "World's first FeFET-based 3D NAND demonstration".

harvard.edu

ui.adsabs.harvard.edu

Bersch, Eric; et al. (2008). "Band offsets of ultrathin high-k oxide films with Si". Phys. Rev. B. 78 (8): 085114. Bibcode:2008PhRvB..78h5114B. doi:10.1103/PhysRevB.78.085114.
V. Miikkulainen; et al. (2013). "Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends". Journal of Applied Physics. 113 (2). Table III. Bibcode:2013JAP...113b1301M. doi:10.1063/1.4757907.
T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.
T. S. Boscke (2011). "Ferroelectricity in hafnium oxide thin films". Applied Physics Letters. 99 (10): 102903. Bibcode:2011ApPhL..99j2903B. doi:10.1063/1.3634052.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science. 47 (21): 7399–7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y. S2CID 7806254.
G. D. Wilk; R. M. Wallace; J. M. Anthony (2001). "High-κ gate dielectrics: Current status and materials properties considerations". Journal of Applied Physics. 89 (10): 5243–5275. Bibcode:2001JAP....89.5243W. doi:10.1063/1.1361065., Table 1
K.-L. Lin; et al. (2011). "Electrode dependence of filament formation in HfO2 resistive-switching memory". Journal of Applied Physics. 109 (8): 084104–084104–7. Bibcode:2011JAP...109h4104L. doi:10.1063/1.3567915.

imec-int.com

Imec (7 June 2017). "Imec demonstrates breakthrough in CMOS-compatible Ferroelectric Memory".

intel.com

Intel (11 November 2007). "Intel's Fundamental Advance in Transistor Design Extends Moore's Law, Computing Performance".

omega.co.uk

Very High Temperature Exotic Thermocouple Probes product data, Omega Engineering, Inc., retrieved 2008-12-03

semanticscholar.org

api.semanticscholar.org

T. D. Huan; V. Sharma; G. A. Rossetti, Jr.; R. Ramprasad (2014). "Pathways towards ferroelectricity in hafnia". Physical Review B. 90 (6): 064111. arXiv:1407.1008. Bibcode:2014PhRvB..90f4111H. doi:10.1103/PhysRevB.90.064111. S2CID 53347579.
H. Zhu; C. Tang; L. R. C. Fonseca; R. Ramprasad (2012). "Recent progress in ab initio simulations of hafnia-based gate stacks". Journal of Materials Science. 47 (21): 7399–7416. Bibcode:2012JMatS..47.7399Z. doi:10.1007/s10853-012-6568-y. S2CID 7806254.

technologyreview.com

"Aaswath Raman | Innovators Under 35 | MIT Technology Review". August 2015. Retrieved 2015-09-02.